APT11F80S

MOSFET (Metal Oxide) N-Channel Tube 900m Ω @ 6A, 10V ±30V 2471pF @ 25V 80nC @ 10V 800V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA


  • Manufacturer: Microsemi Corporation
  • NO: 523-APT11F80S
  • Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
  • Datasheet: pdf
  • Stock: 4828
  • Description: MOSFET (Metal Oxide) N-Channel Tube 900m Ω @ 6A, 10V ±30V 2471pF @ 25V 80nC @ 10V 800V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA (Kg)

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SPECIFICATIONS

Parameters
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 1997
Series POWER MOS 8™
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish Pure Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 245
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 3
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 337W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 900m Ω @ 6A, 10V
Vgs(th) (Max) @ Id 5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 2471pF @ 25V
Current - Continuous Drain (Id) @ 25°C 12A Tc
Gate Charge (Qg) (Max) @ Vgs 80nC @ 10V
Drain to Source Voltage (Vdss) 800V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Continuous Drain Current (ID) 12A
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 1Ohm
Pulsed Drain Current-Max (IDM) 46A
DS Breakdown Voltage-Min 800V
Avalanche Energy Rating (Eas) 524 mJ
RoHS Status RoHS Compliant

In Stock

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