APT106N60B2C6

MOSFET (Metal Oxide) N-Channel Tube 35m Ω @ 53A, 10V ±20V 8390pF @ 25V 308nC @ 10V 600V TO-247-3 Variant


  • Manufacturer: Microsemi Corporation
  • NO: 523-APT106N60B2C6
  • Package: TO-247-3 Variant
  • Datasheet: pdf
  • Stock: 7334
  • Description: MOSFET (Metal Oxide) N-Channel Tube 35m Ω @ 53A, 10V ±20V 8390pF @ 25V 308nC @ 10V 600V TO-247-3 Variant (Kg)

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SPECIFICATIONS

Parameters
Package / Case TO-247-3 Variant
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series CoolMOS™
Published 1997
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 35mOhm
Additional Feature AVALANCHE RATED, ULTRA-LOW RESISTANCE
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Pin Count 3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 833W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 833W
Case Connection DRAIN
Turn On Delay Time 25 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 35m Ω @ 53A, 10V
Vgs(th) (Max) @ Id 3.5V @ 3.4mA
Input Capacitance (Ciss) (Max) @ Vds 8390pF @ 25V
Current - Continuous Drain (Id) @ 25°C 106A Tc
Gate Charge (Qg) (Max) @ Vgs 308nC @ 10V
Rise Time 79ns
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 164 ns
Turn-Off Delay Time 277 ns
Continuous Drain Current (ID) 106A
Gate to Source Voltage (Vgs) 20V
DS Breakdown Voltage-Min 600V
Avalanche Energy Rating (Eas) 2200 mJ
Height 5.31mm
Length 21.46mm
Width 16.26mm
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
Lifecycle Status IN PRODUCTION (Last Updated: 2 days ago)
Factory Lead Time 24 Weeks
Mount Through Hole
Mounting Type Through Hole

In Stock

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