Products
Manufacturer
RFQ
NEWS
ContactAPT1003RKLLG
MOSFET (Metal Oxide) N-Channel Tube 3 Ω @ 2A, 10V ±30V 694pF @ 25V 34nC @ 10V 1000V TO-220-3
- Manufacturer: Microsemi Corporation
- NO: 523-APT1003RKLLG
- Package: TO-220-3
- Datasheet:
- Stock: 13829
- Description: MOSFET (Metal Oxide) N-Channel Tube 3 Ω @ 2A, 10V ±30V 694pF @ 25V 34nC @ 10V 1000V TO-220-3 (Kg)
- Delivery:
- Payment:
In Stock
Please send RFQ , we will respond immediately.
.png)
.png)
.png)
.png)
.png)
.png)
.png)
.png)
.png)
You may place an order without registering to Chip Smart.
We strongly suggest you sign in before purchasing as you
can track your order in real time.
For your convenience, we accept multiple payment methods in USD, including PayPal, Credit Card, and wire transfer.
RFQ (Request for Quotations)It is recommended to request for quotations to get the latest
prices and inventories about the part.
Our sales will reply to
your request by email within 24 hours.
1. You'll receive an order information email in your inbox.
(Please remember to check the spam folder if you didn't hear from us).
2. Since inventories and prices may fluctuate to some
extent, the sales manager is going to reconfirm the order and let you know if there
are any updates.
Shipping starts at $40, but some countries will exceed $40. For
example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time
zone and country.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
Delivery TimeOnce the goods are shipped, estimated delivery time depends on the shipping methods you chose:
FedEx International, 5-7 business days.
The following are some common countries' logistic time.
| Parameters | |
|---|---|
| Lifecycle Status | IN PRODUCTION (Last Updated: 3 weeks ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Series | POWER MOS 7® |
| Published | 2015 |
| JESD-609 Code | e1 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Terminal Finish | TIN SILVER COPPER |
| Voltage - Rated DC | 1kV |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | SINGLE |
| Current Rating | 4A |
| Pin Count | 3 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 139W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 139W |
| Case Connection | DRAIN |
| Turn On Delay Time | 8 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 3 Ω @ 2A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds | 694pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 4A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 34nC @ 10V |
| Rise Time | 4ns |
| Drain to Source Voltage (Vdss) | 1000V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Fall Time (Typ) | 10 ns |
| Turn-Off Delay Time | 25 ns |
| Continuous Drain Current (ID) | 4A |
| JEDEC-95 Code | TO-220AB |
| Gate to Source Voltage (Vgs) | 30V |
| Drain Current-Max (Abs) (ID) | 4A |
| Drain-source On Resistance-Max | 3Ohm |
| Avalanche Energy Rating (Eas) | 425 mJ |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
