2SK3821-E

MOSFET (Metal Oxide) N-Channel Bulk 33m Ω @ 20A, 10V ±20V 4200pF @ 20V 73nC @ 10V 100V TO-220-3, Short Tab


  • Manufacturer: ON Semiconductor
  • NO: 598-2SK3821-E
  • Package: TO-220-3, Short Tab
  • Datasheet: pdf
  • Stock: 1759
  • Description: MOSFET (Metal Oxide) N-Channel Bulk 33m Ω @ 20A, 10V ±20V 4200pF @ 20V 73nC @ 10V 100V TO-220-3, Short Tab (Kg)

Quantity:


  • Delivery: Delivery
  • Payment: payment

In Stock

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IMPORTANT NOTICE

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Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.transport

SPECIFICATIONS

Parameters
Radiation Hardening No
RoHS Status RoHS Compliant
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3, Short Tab
Number of Pins 3
Operating Temperature 150°C TJ
Packaging Bulk
Published 2011
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 1.65W Ta 65W Tc
Turn On Delay Time 30 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 33m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 2.6V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 4200pF @ 20V
Current - Continuous Drain (Id) @ 25°C 40A Ta
Gate Charge (Qg) (Max) @ Vgs 73nC @ 10V
Rise Time 68ns
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 4V 10V
Vgs (Max) ±20V
Fall Time (Typ) 110 ns
Turn-Off Delay Time 300 ns
Continuous Drain Current (ID) 40A
Gate to Source Voltage (Vgs) 20V

In Stock

Please send RFQ , we will respond immediately.