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Contact2SK2009TE85LF
RF MOSFET Transistors N-Ch Sm Sig FET Id 0.2A 30V 20V
- Manufacturer: Toshiba Semiconductor and Storage
- NO: 4669-2SK2009TE85LF
- Package: TO-236-3, SC-59, SOT-23-3
- Datasheet:
- Stock: 6990
- Description: RF MOSFET Transistors N-Ch Sm Sig FET Id 0.2A 30V 20V(Kg)
- Delivery:
- Payment:
In Stock
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| Parameters | |
|---|---|
| Factory Lead Time | 52 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Number of Pins | 3 |
| Operating Temperature | 150°C TJ |
| Packaging | Cut Tape (CT) |
| Published | 2009 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN Code | EAR99 |
| Subcategory | FET General Purpose Powers |
| Technology | MOSFET (Metal Oxide) |
| Reach Compliance Code | unknown |
| Configuration | Single |
| Power Dissipation-Max | 200mW Ta |
| Operating Mode | ENHANCEMENT MODE |
| Turn On Delay Time | 60 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 2 Ω @ 50MA, 2.5V |
| Vgs(th) (Max) @ Id | 1.5V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds | 70pF @ 3V |
| Current - Continuous Drain (Id) @ 25°C | 200mA Ta |
| Drain to Source Voltage (Vdss) | 30V |
| Drive Voltage (Max Rds On,Min Rds On) | 2.5V |
| Vgs (Max) | ±20V |
| Turn-Off Delay Time | 120 ns |
| Continuous Drain Current (ID) | 200mA |
| Gate to Source Voltage (Vgs) | 20V |
| Drain Current-Max (Abs) (ID) | 0.2A |
| RoHS Status | RoHS Compliant |
