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Contact2SJ652
MOSFET (Metal Oxide) P-Channel Bulk 38m Ω @ 14A, 10V ±20V 4360pF @ 20V 80nC @ 10V 60V TO-220-3 Full Pack
- Manufacturer: ON Semiconductor
- NO: 598-2SJ652
- Package: TO-220-3 Full Pack
- Datasheet:
- Stock: 7147
- Description: MOSFET (Metal Oxide) P-Channel Bulk 38m Ω @ 14A, 10V ±20V 4360pF @ 20V 80nC @ 10V 60V TO-220-3 Full Pack (Kg)
- Delivery:
- Payment:
In Stock
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| Parameters | |
|---|---|
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 Full Pack |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Bulk |
| Published | 2003 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Terminal Finish | Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni) |
| HTS Code | 8541.29.00.95 |
| Technology | MOSFET (Metal Oxide) |
| Pin Count | 3 |
| Number of Elements | 1 |
| Power Dissipation-Max | 2W Ta 30W Tc |
| Element Configuration | Single |
| Operating Mode | DEPLETION MODE |
| Power Dissipation | 30W |
| Case Connection | ISOLATED |
| Turn On Delay Time | 33 ns |
| FET Type | P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 38m Ω @ 14A, 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 4360pF @ 20V |
| Current - Continuous Drain (Id) @ 25°C | 28A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 80nC @ 10V |
| Rise Time | 210ns |
| Drain to Source Voltage (Vdss) | 60V |
| Drive Voltage (Max Rds On,Min Rds On) | 4V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 180 ns |
| Turn-Off Delay Time | 310 ns |
| Continuous Drain Current (ID) | 28A |
| JEDEC-95 Code | TO-220AB |
| Gate to Source Voltage (Vgs) | 20V |
| Drain-source On Resistance-Max | 0.0555Ohm |
| Drain to Source Breakdown Voltage | -60V |
| Pulsed Drain Current-Max (IDM) | 112A |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
