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MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 7.5 Ω @ 500mA, 10V ±20V 50pF @ 25V TO-236-3, SC-59, SOT-23-3
- Manufacturer: ON Semiconductor
- NO: 598-2N7002MTF
- Package: TO-236-3, SC-59, SOT-23-3
- Datasheet:
- Stock: 3602
- Description: MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 7.5 Ω @ 500mA, 10V ±20V 50pF @ 25V TO-236-3, SC-59, SOT-23-3 (Kg)
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| Parameters | |
|---|---|
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2016 |
| JESD-609 Code | e3 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Termination | SMD/SMT |
| Resistance | 5Ohm |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 60V |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Current Rating | 115mA |
| Number of Elements | 1 |
| Power Dissipation-Max | 200mW Ta |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 200mW |
| Turn On Delay Time | 20 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 7.5 Ω @ 500mA, 10V |
| Vgs(th) (Max) @ Id | 3V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds | 50pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 115mA Tc |
| Drive Voltage (Max Rds On,Min Rds On) | 5V 10V |
| Vgs (Max) | ±20V |
| Turn-Off Delay Time | 20 ns |
| Continuous Drain Current (ID) | 115mA |
| Threshold Voltage | 2.5V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 60V |
| Dual Supply Voltage | 60V |
| Nominal Vgs | 2.5 V |
| Feedback Cap-Max (Crss) | 5 pF |
| Height | 1.2mm |
| Length | 2.92mm |
| Width | 1.3mm |
| REACH SVHC | No SVHC |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
