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2N7002KT1G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-2N7002KT1G
- Package: TO-236-3, SC-59, SOT-23-3
- Datasheet:
- Stock: 258
- Description: 2N7002KT1G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Rds On (Max) @ Id, Vgs | 1.6 Ω @ 500mA, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 24.5pF @ 20V |
| Gate Charge (Qg) (Max) @ Vgs | 0.7nC @ 4.5V |
| Rise Time | 9ns |
| Fall Time (Typ) | 9 ns |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 60V |
| Nominal Vgs | 2.3 V |
| Current - Continuous Drain (Id) @ 25°C | 320mA Ta |
| Feedback Cap-Max (Crss) | 5 pF |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Factory Lead Time | 7 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 3 days ago) |
| Packaging | Tape & Reel (TR) |
| Published | 2008 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Length | 3.04mm |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Contact Plating | Tin |
| Radiation Hardening | No |
| Number of Pins | 3 |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| REACH SVHC | No SVHC |
| Height | 1.11mm |
| Width | 1.4mm |
| Resistance | 1.6Ohm |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C~150°C TJ |
| Technology | MOSFET (Metal Oxide) |
| Operating Mode | ENHANCEMENT MODE |
| JESD-609 Code | e3 |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Pin Count | 3 |
| Surface Mount | YES |
| Number of Channels | 1 |
| Subcategory | FET General Purpose Power |
| Number of Elements | 1 |
| Halogen Free | Halogen Free |
| Element Configuration | Single |
| Power Dissipation | 420mW |
| Turn On Delay Time | 12.2 ns |
| Threshold Voltage | 2.3V |
| Power Dissipation-Max | 350mW Ta |
| Continuous Drain Current (ID) | 380mA |
| Max Junction Temperature (Tj) | 150°C |
| Transistor Application | SWITCHING |
| Turn-Off Delay Time | 55.8 ns |
| Transistor Element Material | SILICON |
| FET Type | N-Channel |
Product Description:
The 2N7002KT1G is a small signal N-channel MOSFET transistor designed to provide efficient switching and amplification capabilities in various electronic circuits. With its compact size and reliable performance, this transistor is well-suited for applications where precise control of current flow and voltage switching is essential.
Features:
N-Channel MOSFET: The 2N7002KT1G is an N-channel metal-oxide-semiconductor field-effect transistor (MOSFET), allowing it to control the flow of current between the drain and source terminals.
Low Threshold Voltage: This transistor has a low threshold voltage, making it easy to turn on and off with a relatively low input voltage.
Small Form Factor: The compact SOT-23 surface-mount package makes it suitable for space-constrained circuit designs and automated assembly processes.
High Switching Speed: The transistor provides fast switching speeds, enabling it to quickly transition between on and off states.
Low ON-Resistance: It features a low ON-resistance, minimizing power losses when the transistor is in the conducting state.
RoHS Compliant: The transistor is compliant with the Restriction of Hazardous Substances (RoHS) directive, meeting environmental standards.
Applications:
Switching Circuits: The 2N7002KT1G transistor is commonly used in switching circuits to control the flow of current through various electronic components, such as LEDs, relays, and small motors.
Signal Amplification: It can be employed in amplifier circuits to amplify weak signals, such as those from sensors or microphones.
Level Shifting: The transistor can be used for level shifting applications, where it converts logic-level signals to higher or lower voltage levels.
Load Switching: It is suitable for load switching applications where low ON-resistance and efficient switching are required.
Voltage Regulation: The transistor can be used in voltage regulation circuits to control voltage levels in electronic systems.
Pulse Generation: It can be part of pulse generation circuits, producing precise pulses for various timing functions.
Analog Switching: The transistor can be used as an analog switch to control analog signals in various electronic systems.
Interface Circuits: It can be utilized in interface circuits to match different voltage levels between devices.
Battery-Powered Devices: The low threshold voltage and efficient switching characteristics make it suitable for battery-powered devices where power efficiency is crucial.
In summary, the 2N7002KT1G N-channel MOSFET transistor offers efficient switching and amplification capabilities in a compact package. Its low threshold voltage, small form factor, high switching speed, and low ON-resistance make it versatile for various applications, including switching circuits, signal amplification, load switching, voltage regulation, and more. Whether you're designing consumer electronics, industrial control systems, or battery-powered devices, this transistor provides reliable performance and precise control over current flow and voltage switching.
