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| Parameters | |
|---|---|
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Current Rating | 115mA |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 500mW Ta |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 200mW |
| Turn On Delay Time | 3 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 3 Ω @ 500mA, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250μA |
| Halogen Free | Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds | 20pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 300mA Ta |
| Gate Charge (Qg) (Max) @ Vgs | 0.6nC @ 10V |
| Rise Time | 3.3ns |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Turn-Off Delay Time | 5.5 ns |
| Continuous Drain Current (ID) | 300mA |
| Threshold Voltage | 2.1V |
| Gate to Source Voltage (Vgs) | 20V |
| Max Dual Supply Voltage | 60V |
| Drain-source On Resistance-Max | 3Ohm |
| Drain to Source Breakdown Voltage | 60V |
| Max Junction Temperature (Tj) | 150°C |
| Height | 1.1mm |
| Length | 2.9mm |
| Width | 1.3mm |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 10 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Cut Tape (CT) |
| Published | 2012 |
| Series | OptiMOS™ |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Additional Feature | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE |
| Voltage - Rated DC | 60V |
| Technology | MOSFET (Metal Oxide) |
2N7002H6327XTSA2 is a type of OptiMOS? small-signal transistor that is provided by Infineon Technologies. It is the key active component of all modern electrical appliances and is one of the most important semiconductor devices. Its amplification and switching functions have led to a leap in electronic technology. The appearance of these transistors laid the foundation for the generation of integrated circuits, microprocessors, and computer memory.
Ultra logic level
Avalanche rated
Enhancement mode
dv/dt rated
Fast switching
Available in the PG-SOT-23 package
Automotive applications
Please send RFQ , we will respond immediately.