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2N7002E-7-F datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Diodes Incorporated stock available at Feilidi
- Manufacturer: Diodes Incorporated
- NO: 233-2N7002E-7-F
- Package: TO-236-3, SC-59, SOT-23-3
- Datasheet:
- Stock: 9362
- Description: 2N7002E-7-F datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Diodes Incorporated stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Resistance | 4Ohm |
| Terminal Finish | Matte Tin (Sn) |
| Additional Feature | LOW THRESHOLD |
| Subcategory | FET General Purpose Powers |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Pin Count | 3 |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 370mW Ta |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 540mW |
| Turn On Delay Time | 7 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 3 Ω @ 250mA, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 50pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 250mA Ta |
| Gate Charge (Qg) (Max) @ Vgs | 0.22nC @ 4.5V |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Turn-Off Delay Time | 11 ns |
| Continuous Drain Current (ID) | 250mA |
| Gate to Source Voltage (Vgs) | 20V |
| Drain Current-Max (Abs) (ID) | 0.24A |
| Drain to Source Breakdown Voltage | 60V |
| Feedback Cap-Max (Crss) | 5 pF |
| Height | 1mm |
| Length | 2.9mm |
| Width | 1.3mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 19 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Number of Pins | 3 |
| Weight | 7.994566mg |
| Transistor Element Material | SILICON |
| Manufacturer Package Identifier | 2N7002E-7-F |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2013 |
2N7002E-7-F Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 50pF @ 25V.The drain current is?the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 250mA. This device has 60V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 60V.A device's drain current is its maximum continuous current, and this device's drain current is 0.24A.It is [11 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 7 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Its overall power consumption can be reduced by using drive voltage (4.5V 10V).
2N7002E-7-F Features
a continuous drain current (ID) of 250mA
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 11 ns
2N7002E-7-F Applications
There are a lot of Diodes Incorporated 2N7002E-7-F applications of single MOSFETs transistors.
- LCD/LED TV
- Micro Solar Inverter
- General Purpose Interfacing Switch
- DC-to-DC converters
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Industrial Power Supplies
- Lighting
- DC/DC converters
- PFC stages, hard switching PWM stages and resonant switching
