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MOSFET (Metal Oxide) N-Channel Tape & Box (TB) 5 Ω @ 500mA, 10V ±20V 50pF @ 25V TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Manufacturer: ON Semiconductor
- NO: 598-2N7000TA
- Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet:
- Stock: 3091
- Description: MOSFET (Metal Oxide) N-Channel Tape & Box (TB) 5 Ω @ 500mA, 10V ±20V 50pF @ 25V TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) (Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 9 Weeks |
| Contact Plating | Copper, Silver, Tin |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
| Number of Pins | 3 |
| Manufacturer Package Identifier | TO-92 3L |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Box (TB) |
| Published | 2013 |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN Code | EAR99 |
| Resistance | 5Ohm |
| Terminal Finish | Tin (Sn) |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 60V |
| Technology | MOSFET (Metal Oxide) |
| Current Rating | 200mA |
| Base Part Number | 2N7000 |
| Number of Elements | 1 |
| Power Dissipation-Max | 400mW Ta |
| Element Configuration | Single |
| Power Dissipation | 400mW |
| Turn On Delay Time | 10 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 5 Ω @ 500mA, 10V |
| Vgs(th) (Max) @ Id | 3V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds | 50pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 200mA Tc |
| Rise Time | 10ns |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 10 ns |
| Turn-Off Delay Time | 10 ns |
| Continuous Drain Current (ID) | 200mA |
| Threshold Voltage | 3.9V |
| Gate to Source Voltage (Vgs) | 30V |
| Drain Current-Max (Abs) (ID) | 0.2A |
| Drain to Source Breakdown Voltage | 60V |
| Height | 5.33mm |
| Length | 5.2mm |
| Width | 4.19mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
2N7000TA Description
These high cell density, DMOS N-channel enhancement mode field effect transistors are made only by ON Semiconductor. These devices' on-state resistance has been minimized while still offering robust, dependable, and quick switching performance. They can deliver pulsed currents up to 2 A and can be employed in the majority of applications requiring up to 400 mA DC. These components are best suited for low-voltage, low-current uses including power MOSFET gate drivers, small servo motor control, and other switching applications.
2N7000TA Features
? Low RDS High Density Cell Design (ON)
? Switches with voltage control for small signals
? Tough and Dependable
? High Current Saturation Capability
2N7000TA Applications
Switching applications
