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MOSFET (Metal Oxide) N-Channel Bulk 3Ohm @ 1A, 10V ±20V 50pF @ 24V 60V TO-205AD, TO-39-3 Metal Can
- Manufacturer: Microchip Technology
- NO: 536-2N6660
- Package: TO-205AD, TO-39-3 Metal Can
- Datasheet:
- Stock: 490
- Description: MOSFET (Metal Oxide) N-Channel Bulk 3Ohm @ 1A, 10V ±20V 50pF @ 24V 60V TO-205AD, TO-39-3 Metal Can (Kg)
- Delivery:
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| Parameters | |
|---|---|
| Factory Lead Time | 6 Weeks |
| Contact Plating | Gold |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Number of Pins | 3 |
| Supplier Device Package | TO-39 |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Bulk |
| Published | 2011 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Technology | MOSFET (Metal Oxide) |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Voltage | 60V |
| Power Dissipation-Max | 6.25W Tc |
| Element Configuration | Single |
| Current | 11A |
| Power Dissipation | 6.25W |
| Turn On Delay Time | 10 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 3Ohm @ 1A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds | 50pF @ 24V |
| Current - Continuous Drain (Id) @ 25°C | 410mA Ta |
| Drain to Source Voltage (Vdss) | 60V |
| Drive Voltage (Max Rds On,Min Rds On) | 5V 10V |
| Vgs (Max) | ±20V |
| Turn-Off Delay Time | 10 ns |
| Continuous Drain Current (ID) | 410mA |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 60V |
| Input Capacitance | 50pF |
| Drain to Source Resistance | 3Ohm |
| Rds On Max | 3 Ω |
| Radiation Hardening | No |
| RoHS Status | Non-RoHS Compliant |
| Lead Free | Lead Free |
