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ContactToshiba Semiconductor and Storage(13104)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Input Type | Height Seated (Max) | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Sensing Method | Capacitance | Length | Height | Width | Lead Free | Max Supply Current | Number of Terminations | Factory Lead Time | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | Number of Functions | Voltage - Input (Max) | Max Input Voltage | JESD-609 Code | Feature | Polarity | Max Power Dissipation | Voltage - Supply | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Base Part Number | Pin Count | Operating Temperature (Max) | Supply Voltage-Min (Vsup) | Analog IC - Other Type | Element Configuration | Accuracy | Time@Peak Reflow Temperature-Max (s) | Input Bias Current | Number of Elements | Subcategory | Number of Circuits | Qualification Status | JESD-30 Code | Supplier Device Package | Data Rate | Max Output Current | Polarization | Min Input Voltage | Output Voltage | Output Current | Dropout Voltage | Forward Current | Forward Voltage | Output Type | Max Surge Current | Max Reverse Leakage Current | Configuration | Power Supply Rejection Ratio (PSRR) | Function | Application | Number of Outputs | Quiescent Current | Sensors/Transducers Type | Speed | Output Configuration | Power - Max | Diode Element Material | Power Dissipation-Max | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Reverse Voltage (DC) | Channel Type | Sensing Range | Current - Supply (Max) | Voltage - Output (Max) | Current - Quiescent (Iq) | Capacitance @ Vr, F | Control Features | Voltage - DC Reverse (Vr) (Max) | Current - Output | Voltage - Output (Min/Fixed) | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Number of Regulators | Protection Features | Voltage Dropout (Max) | PSRR | Test Condition | Translator Type | Voltage - VCCA | Voltage - VCCB | Channels per Circuit | Current - Average Rectified (Io) | Operating Temperature - Junction | Diode Configuration | Vce(on) (Max) @ Vge, Ic | Current - Collector Pulsed (Icm) | Td (on/off) @ 25°C |
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| TCR2EE33,LM | Toshiba Semiconductor and Storage | $0.25 |
Min: 1 Mult: 1 |
download | TCR2EE | Surface Mount | Surface Mount | -40°C~85°C | Tape & Reel (TR) | 1 (Unlimited) | 85°C | -40°C | RoHS Compliant | 2014 | SOT-553 | 5 | No | 5.5V | 5.5V | Positive | 150mW | 1 % | 35μA | ESV | 200mA | 1.5V | 3.3V | 150mV | Fixed | 73dB | 1 | 60μA | Positive | 60μA | Enable | 200mA | 3.3V | 1 | Over Current | 0.2V @ 150mA | 73dB (1kHz) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TA58LT00F(T6L1,Q) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~125°C | Tape & Reel (TR) | 1 (Unlimited) | BIPOLAR | 2.7mm | RoHS Compliant | 2012 | TO-252-6, DPak (5 Leads + Tab) | 5.5mm | 5 | 6 | No | 1 | 26V | e0 | 1W | SINGLE | GULL WING | 14V | TA58L | 5 | 6V | ANALOG CIRCUIT | R-PSSO-G5 | 150mA | 6V | 13.4V | 300mV | Adjustable | 800μA | Positive | 15mA | 0.8mA | Enable | 2.5V | 1 | Over Current, Over Temperature, Reverse Polarity | 0.6V @ 100mA | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TA58L05S(FJTN,AQ) | Toshiba Semiconductor and Storage | $15.46 |
Min: 1 Mult: 1 |
download | Through Hole | -40°C~105°C | Bulk | 1 (Unlimited) | 2013 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ta58l05sapnqm-datasheets-3075.pdf | TO-220-3 Full Pack | 29V | TO-220NIS | Fixed | Positive | 50mA | 1mA | 250mA | 5V | 1 | Over Current, Over Temperature | 0.4V @ 200mA | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TA58L12S(FJTN,QM) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | -40°C~105°C | Bulk | 1 (Unlimited) | 2013 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ta58l05sapnqm-datasheets-3075.pdf | TO-220-3 Full Pack | 29V | TO-220NIS | Fixed | Positive | 50mA | 1.2mA | 250mA | 12V | 1 | Over Current, Over Temperature | 0.4V @ 200mA | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TA58L08S(FJTN,AQ) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | -40°C~105°C | Bulk | 1 (Unlimited) | 2013 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ta58l05sapnqm-datasheets-3075.pdf | TO-220-3 Full Pack | 29V | TO-220NIS | Fixed | Positive | 50mA | 1mA | 250mA | 8V | 1 | Over Current, Over Temperature | 0.4V @ 200mA | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TA78DS05CP,T6HYF(M | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | -40°C~85°C | Bulk | 1 (Unlimited) | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ta78ds05bpfj-datasheets-3143.pdf | TO-226-3, TO-92-3 Long Body | 33V | LSTM | Fixed | Positive | 1mA | 1mA | 30mA | 5V | 1 | Over Current, Over Temperature, Over Voltage, Transient Voltage | 0.3V @ 10mA | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TA78L008AP,WNLF(J | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | -30°C~85°C | Bulk | 1 (Unlimited) | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ta78l015apfm-datasheets-4584.pdf | TO-226-3, TO-92-3 Long Body | 35V | LSTM | Fixed | Positive | 6.5mA | 150mA | 8V | 1 | Over Current | 1.7V @ 40mA Typ | 45dB (120Hz) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TA58L09S,Q(M | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | -40°C~105°C | Bulk | 1 (Unlimited) | 2013 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ta58l05sapnqm-datasheets-3075.pdf | TO-220-3 Full Pack | 29V | TO-220NIS | Fixed | Positive | 50mA | 1mA | 250mA | 9V | 1 | Over Current, Over Temperature | 0.4V @ 200mA | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TA76431S(T6PSETEMF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | -40°C~85°C | Bulk | 1 (Unlimited) | 2013 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ta76431st6muratfm-datasheets-3139.pdf | TO-226-3, TO-92-3 Long Body | Adjustable | Positive | 36V | 2.495V | 1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TA58M05S(AFT,LB180 | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | -40°C~105°C | Bulk | 1 (Unlimited) | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ta58m12sqj-datasheets-3119.pdf | TO-220-3 Full Pack | 29V | TO-220NIS | Fixed | Positive | 80mA | 1mA | 500μA | 5V | 1 | Over Current, Over Temperature, Reverse Polarity | 0.65V @ 500mA | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TCS10SPU(TE85L,F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | TCS | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | Hall Effect | RoHS Compliant | 2014 | 6-SMD (5 Leads), Flat Lead | Hall Effect | 1.3mA | South Pole | 2.3V~3.6V | 5mA | South Pole | Push-Pull | Unipolar Switch | MAGNETIC FIELD SENSOR,MAGNETORESISTIVE | 2.5mT Trip, 0.3mT Release | 1.3mA | 25°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TC7LX1102WBG(EL,AH | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | TC7LX | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | 2011 | 8-UFBGA, WLCSP | Auto-Direction Sensing | 1 | 200Mbps | Bidirectional | Voltage Level | 1.2V~3.6V | 1.2V~3.6V | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TBAT54S,LM | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Digi-Reel® | 1 (Unlimited) | RoHS Compliant | 2016 | TO-236-3, SC-59, SOT-23-3 | 3 | 12 Weeks | yes | DUAL | GULL WING | NOT SPECIFIED | 150°C | NOT SPECIFIED | 2 | R-PDSO-G3 | Small Signal =< 200mA (Io), Any Speed | SILICON | 0.32W | 1.5 ns | Schottky | 30V | 140mA | 0.2A | 2μA @ 25V | 580mV @ 100mA | 200mA | -55°C~150°C | 1 Pair Series Connection | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1SS361,LJ(CT | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 125°C | -55°C | RoHS Compliant | 2014 | SC-75, SOT-416 | 3 | 12 Weeks | 3 | EAR99 | unknown | 8541.10.00.70 | 100mW | DUAL | GULL WING | 1SS361 | Common Cathode | 2 | 100mA | 1.2V | 2A | Small Signal =< 200mA (Io), Any Speed | SILICON | 500nA | 85V | 2A | 4 ns | 4 ns | Standard | 80V | 100mA | 0.1A | 80V | 500nA @ 80V | 1.2V @ 100mA | 125°C Max | 1 Pair Common Cathode | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HN1D01FE(TE85L,F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | RoHS Compliant | 2014 | SOT-563, SOT-666 | 12 Weeks | 6 | EAR99 | 100mW | Common Anode | Other Diodes | 100mA | 920mV | 2A | Small Signal =< 200mA (Io), Any Speed | 500nA | 1.6 ns | 1.6 ns | Standard | 80V | 100mA | 80V | 500nA @ 80V | 1.2V @ 100mA | 150°C Max | 2 Pair Common Anode | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CMS06(TE12L,Q,M) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 125°C | -40°C | RoHS Compliant | 2007 | SOD-128 | 2 | 12 Weeks | 2 | Silver, Tin | No | DUAL | FLAT | CMS06 | Single | 1 | 2A | 370mV | 40A | 3mA | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 3mA | 30V | 40A | Schottky | 30V | 2A | 1 | 2A | 130pF @ 10V 1MHz | 3mA @ 30V | 370mV @ 2A | -40°C~125°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GT60N321(Q) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | Standard | 2007 | TO-3PL | GT60 | 170W | 2.5μs | 1000V | 60A | 2.8V @ 15V, 60A | 120A | 330ns/700ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1SS374(TE85L,F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 100°C | -40°C | RoHS Compliant | 2013 | TO-236-3, SC-59, SOT-23-3 | 11 Weeks | EAR99 | unknown | 8541.10.00.70 | 50mW | Dual | Rectifier Diodes | 200mA | Small Signal =< 200mA (Io), Any Speed | 1A | 15V | Schottky | 10V | 100mA | 20μA @ 10V | 500mV @ 100mA | 125°C Max | 1 Pair Series Connection | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HN2S03T(TE85L) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 100°C | -40°C | RoHS Compliant | 2014 | 4-SMD, Flat Leads | 1.2mm | 520μm | 900μm | 4 | EAR99 | No | 70mW | Dual | Other Diodes | 50mA | Small Signal =< 200mA (Io), Any Speed | 1A | 500nA | 25V | 1A | Schottky | 20V | 50mA | 500nA @ 20V | 550mV @ 50mA | 125°C Max | 2 Independent | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1SS413CT,L3F | Toshiba Semiconductor and Storage | $0.05 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2006 | SOD-882 | 12 Weeks | Small Signal =< 200mA (Io), Any Speed | Schottky | 20V | 50mA | 3.9pF @ 0V 1MHz | 20V | 500nA @ 20V | 550mV @ 50mA | -55°C~125°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1SS416,L3M | Toshiba Semiconductor and Storage | $0.23 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 100°C | -40°C | RoHS Compliant | 2013 | 2-SMD, Flat Lead | 12 Weeks | EAR99 | unknown | 100mW | 1SS416 | Single | 100mA | 380mV | Small Signal =< 200mA (Io), Any Speed | 1A | 50μA | 35V | 1A | Schottky | 30V | 100mA | 30V | 15pF @ 0V 1MHz | 50μA @ 30V | 500mV @ 100mA | 125°C Max | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CUHS10F60,H3F | Toshiba Semiconductor and Storage | $0.06 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2-SMD, Flat Lead | 12 Weeks | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 130pF @ 0V 1MHz | 60V | 40μA @ 60V | 1A | 150°C Max | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CRS03(TE85L,Q,M) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -40°C | RoHS Compliant | 2010 | /files/toshiba-crs03te85lqm-datasheets-2560.pdf | SOD-123F | 2 | 12 Weeks | 2 | Silver, Tin | No | DUAL | FLAT | CRS03 | Single | 1 | 450mV | 20A | 100μA | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | 30V | 20A | Schottky | 30V | 1A | 1A | 40pF @ 10V 1MHz | 100μA @ 30V | 450mV @ 1A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CMG06(TE12L,Q,M) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2014 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-cmg06te12lqm-datasheets-7856.pdf | SOD-128 | 12 Weeks | Standard Recovery >500ns, > 200mA (Io) | Standard | 600V | 10μA @ 600V | 1.1V @ 1A | 1A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CMC02(TE12L,Q,M) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -40°C | RoHS Compliant | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-cmc02te12lqm-datasheets-8457.pdf | SOD-128 | 12 Weeks | Single | Standard Recovery >500ns, > 200mA (Io) | 10μA | 400V | 30A | Standard | 10μA @ 400V | 1V @ 1A | 1A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CMG03(TE12L,Q,M) | Toshiba Semiconductor and Storage | $0.39 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2015 | SOD-128 | 12 Weeks | 15A | Standard Recovery >500ns, > 200mA (Io) | 10μA | 400V | Standard | 600V | 10μA @ 600V | 1.1V @ 2A | 2A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CRS10I40A(TE85L,QM | Toshiba Semiconductor and Storage | $0.07 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2016 | SOD-123F | 12 Weeks | Standard Recovery >500ns, > 200mA (Io) | Standard | 35pF @ 10V 1MHz | 40V | 60μA @ 40V | 490mV @ 700mA | 1A | 150°C Max | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CMS02(TE12L) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | Non-RoHS Compliant | 2005 | 30V | 3A | SOD-128 | 170pF | Contains Lead | 2 | EAR99 | FREE WHEELING DIODE | unknown | 8541.10.00.80 | Standard | DUAL | FLAT | NOT SPECIFIED | CMS02 | 2 | 125°C | NOT SPECIFIED | 1 | Not Qualified | R-PDSO-F2 | 3A | SINGLE | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | Schottky | 30V | 3A | 40A | 1 | 500μA @ 30V | 400mV @ 3A | -40°C~125°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CLH07(TE16R,Q) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Bulk | 1 (Unlimited) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-clh07te16lnmbq-datasheets-2704.pdf | L-FLAT™ | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | Standard | 400V | 10μA @ 400V | 1.8V @ 5A | 5A DC | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CLS03(TE16L,PSD,Q) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Bulk | 1 (Unlimited) | 2013 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-cls03te16rq-datasheets-2695.pdf | L-FLAT™ | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 345pF @ 10V 1MHz | 60V | 1mA @ 60V | 0.58V @ 10A | 10A DC | -40°C~125°C |
