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ContactToshiba Semiconductor and Storage(13104)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Type | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Frequency | Operating Supply Current | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Shape | Number of Terminations | Factory Lead Time | Weight | Number of Pins | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | Number of Functions | Polarity | Surface Mount | Max Power Dissipation | Voltage - Supply | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Base Part Number | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Gain | Qualification Status | JESD-30 Code | Supplier Device Package | Noise Figure | Forward Current | Output Type | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Gain Bandwidth Product | Transistor Element Material | Configuration | Transistor Application | Polarity/Channel Type | Power Dissipation-Max (Abs) | Application | Continuous Collector Current | Speed | Power - Max | Max Breakdown Voltage | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Recovery Time | Diode Type | Max Reverse Voltage (DC) | Collector Emitter Breakdown Voltage | Collector Emitter Saturation Voltage | Average Rectified Current | Collector Emitter Voltage (VCEO) | Max Collector Current | Transition Frequency | Wavelength | Current - Test | Size | Infrared Range | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Collector Base Voltage (VCBO) | Emitter Base Voltage (VEBO) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | hFE Min | Proximity Detection | Current - Average Rectified (Io) | Operating Temperature - Junction | Current - Collector Cutoff (Max) | Transistor Type | DC Current Gain (hFE) (Min) @ Ic, Vce | Noise Figure (dB Typ @ f) | Frequency - Transition | Voltage - Test | Number of Drivers/Receivers | Vce Saturation (Max) @ Ib, Ic |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| CLH06(TE16R,Q) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Bulk | 1 (Unlimited) | RoHS Compliant | 2017 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-clh06te16rq-datasheets-2686.pdf | L-FLAT™ | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | Standard | 300V | 5A DC | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CLS03(T6L,SHINA,Q) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Bulk | 1 (Unlimited) | 2013 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-cls03te16rq-datasheets-2695.pdf | L-FLAT™ | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 345pF @ 10V 1MHz | 60V | 1mA @ 60V | 0.58V @ 10A | 10A DC | -40°C~125°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CUS01(TE85L,Q,M) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 125°C | -40°C | RoHS Compliant | 2013 | SC-76, SOD-323 | 1.9mm | 600μm | 1.25mm | 24 Weeks | 2 | unknown | Single | 1A | Fast Recovery =< 500ns, > 200mA (Io) | 1.5mA | 30V | 20A | Schottky | 30V | 1A | 1.5mA @ 30V | 390mV @ 1A | -40°C~125°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CCS15S30,L3IDTF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2015 | 0603 (1608 Metric) | 12 Weeks | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 20V | 1.5A | 200pF @ 0V 1MHz | 20V | 500μA @ 30V | 400mV @ 1A | 125°C Max | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MT3S111P(TE12L,F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | TO-243AA | 12 Weeks | EAR99 | YES | Other Transistors | 10.5dB | Single | NPN | 0.3W | 1W | 6000MHz | 6V | 100mA | NPN | 200 @ 30mA 5V | 1.25dB @ 1GHz | 8GHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SC5096-R,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | 125°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 2014 | SC-75, SOT-416 | 1.4dB | 100mW | 10V | 15mA | NPN | 50 @ 7mA 6V | 1.4dB @ 1GHz | 10GHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK209-Y(TE85L,F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 125°C | -55°C | 1kHz | RoHS Compliant | 2009 | /files/toshiba-2sk209yte85lf-datasheets-8934.pdf | TO-236-3, SC-59, SOT-23-3 | 2.9mm | 1.1mm | 1.5mm | 52 Weeks | 3 | No | 150mW | Single | 1dB | 3mA | -30V | 500μA | N-Channel JFET | 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPS853 | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Ambient | Surface Mount | Surface Mount | -30°C~85°C | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2009 | 6-SMD (5 Leads), Flat Lead | RECTANGULAR | 5 | 1 | 2.2V~5.5V | 3V | Photo ICs | Current | COMPLEX | GENERAL PURPOSE | 600nm | 1.7mm | NO | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TD62783AFNG(O,S) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Driver | Surface Mount | Surface Mount | -40°C~85°C | Tube | 1 (Unlimited) | 2.5mA | RoHS Compliant | 1997 | 18-LSSOP (0.173, 4.40mm Width) | 18 | No | NPN, PNP | 960mW | 5V | TD6278*A | 8 | 2V | 8/0 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HN1A01FE-Y,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | RoHS Compliant | 2014 | SOT-563, SOT-666 | 1.6mm | 550μm | 1.2mm | 12 Weeks | 6 | PNP | 100mW | ES6 | 80MHz | -150mA | 100mW | 50V | 50V | -100mV | 300mV | 150mA | 50V | 150mA | -50V | -5V | 120 | 100nA ICBO | 2 PNP (Dual) | 120 @ 2mA 6V | 80MHz | 300mV @ 10mA, 100mA | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SC4207-Y(TE85L,F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 125°C TJ | Cut Tape (CT) | 1 (Unlimited) | RoHS Compliant | 2009 | SC-74A, SOT-753 | 5 | 11 Weeks | EAR99 | 8541.21.00.95 | NPN | 300mW | GULL WING | 5 | Dual | 2 | Other Transistors | Not Qualified | R-PDSO-G5 | 80MHz | SILICON | AMPLIFIER | 300mW | 50V | 50V | 250mV | 150mA | 80MHz | 60V | 5V | 120 | 100nA ICBO | 2 NPN (Dual) Matched Pair, Common Emitter | 120 @ 2mA 6V | 250mV @ 10mA, 100mA | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HN2A01FU-GR(TE85LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 125°C TJ | Cut Tape (CT) | 1 (Unlimited) | RoHS Compliant | 2014 | 6-TSSOP, SC-88, SOT-363 | 6 | No | PNP | 200mW | Dual | 80MHz | 200mW | 50V | 50V | -100mV | 300mV | 150mA | -50V | -5V | 120 | 100nA ICBO | 2 PNP (Dual) | 200 @ 2mA 6V | 300mV @ 10mA, 100mA | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HN1B04FU-Y(T5L,F,T | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 125°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2014 | 6-TSSOP, SC-88, SOT-363 | unknown | 200mW | 200mW | 50V | 50V | 250mV | 150mA | 100nA ICBO | NPN, PNP | 120 @ 2mA 6V | 150MHz | 250mV @ 10mA, 100mA | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SC2712-Y,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 125°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2011 | TO-236-3, SC-59, SOT-23-3 | 3 | 12 Weeks | LOW NOISE | unknown | 150mW | DUAL | GULL WING | NOT SPECIFIED | 2SC2712 | Single | NOT SPECIFIED | 1 | R-PDSO-G3 | 80MHz | SILICON | AMPLIFIER | NPN | 150mA | 50V | 50V | 100mV | 50V | 150mA | 80MHz | 60V | 5V | 70 | 100nA ICBO | NPN | 120 @ 2mA 6V | 250mV @ 10mA, 100mA | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SC2712-OTE85LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | 125°C TJ | Cut Tape (CT) | 1 (Unlimited) | RoHS Compliant | 2009 | TO-236-3, SC-59, SOT-23-3 | 3 | 11 Weeks | EAR99 | LOW NOISE | unknown | 8541.21.00.95 | YES | DUAL | GULL WING | 1 | R-PDSO-G3 | SILICON | SINGLE | AMPLIFIER | NPN | 150mW | 80MHz | 50V | 150mA | 100nA ICBO | NPN | 70 @ 2mA 6V | 80MHz | 250mV @ 10mA, 100mA | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SC6026CTGRTPL3 | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | RoHS Compliant | 2009 | SC-101, SOT-883 | 12 Weeks | unknown | 100mW | Other Transistors | Single | NPN | 100mW | 50V | 50V | 250mV | 100mA | 60MHz | 100nA ICBO | NPN | 200 @ 2mA 6V | 60MHz | 250mV @ 10mA, 100mA | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPC6503(TE85L,F,M) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSVII | Surface Mount | 150°C TJ | Tape & Reel (TR) | RoHS Compliant | 2007 | SOT-23-6 Thin, TSOT-23-6 | 12 Weeks | 1.6W | 30V | 1.5A | 100nA ICBO | NPN | 400 @ 150mA 2V | 120mV @ 10mA, 500mA | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SC4213-A(TE85L,F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 125°C TJ | Cut Tape (CT) | 1 (Unlimited) | 30MHz | RoHS Compliant | 2014 | /files/toshiba-2sc4213ate85lf-datasheets-3154.pdf | SC-70, SOT-323 | 2mm | 900μm | 1.25mm | 14 Weeks | 3 | unknown | 100mW | Single | 100mW | 1 | Other Transistors | NPN | 100mV | 20V | 300mA | 300mA | 50V | 25V | 100nA ICBO | NPN | 200 @ 4mA 2V | 100mV @ 3mA, 30A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SC5200N(S1,E,S) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | 150°C TJ | Tube | Not Applicable | RoHS Compliant | 2013 | TO-3P-3, SC-65-3 | 12 Weeks | 6.961991g | 150W | Single | 30MHz | 15A | 230V | 400mV | 230V | 15A | 230V | 5V | 35 | 5μA ICBO | NPN | 80 @ 1A 5V | 3V @ 800mA, 8A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SA1020-O(TE6,F,M) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2010 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sa1020ofj-datasheets-0961.pdf | TO-226-3, TO-92-3 Long Body | TO-92MOD | 900mW | 50V | 2A | 1μA ICBO | PNP | 70 @ 500mA 2V | 100MHz | 500mV @ 50mA, 1A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SA1020-Y,T6F(J | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2010 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sa1020ofj-datasheets-0961.pdf | TO-226-3, TO-92-3 Long Body | TO-92MOD | 900mW | 50V | 2A | 1μA ICBO | PNP | 70 @ 500mA 2V | 100MHz | 500mV @ 50mA, 1A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SA1931,SINFQ(J | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2007 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sa1931sinfqj-datasheets-1023.pdf | TO-220-3 Full Pack | 2W | 50V | 5A | 1μA ICBO | PNP | 100 @ 1A 1V | 60MHz | 400mV @ 200mA, 2A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SA1837,YHF(J | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2007 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sa1837fm-datasheets-6654.pdf | TO-220-3 Full Pack | 2W | 230V | 1A | 1μA ICBO | PNP | 100 @ 100mA 5V | 70MHz | 1.5V @ 50mA, 500mA | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SA1020-Y(T6ND3,AF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2010 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sa1020ofj-datasheets-0961.pdf | TO-226-3, TO-92-3 Long Body | TO-92MOD | 900mW | 50V | 2A | 1μA ICBO | PNP | 70 @ 500mA 2V | 100MHz | 500mV @ 50mA, 1A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SB1457,T6TOTOF(J | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sb1457t6cnoaf-datasheets-1081.pdf | TO-226-3, TO-92-3 Long Body | 900mW | 100V | 2A | 10μA ICBO | PNP | 2000 @ 1A 2V | 50MHz | 1.5V @ 1mA, 1A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SA1869-Y(JKT,Q,M) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2007 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sa1869yqj-datasheets-1014.pdf | TO-220-3 Full Pack | TO-220NIS | 10W | 50V | 3A | 1μA ICBO | PNP | 70 @ 500mA 2V | 100MHz | 600mV @ 200mA, 2A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SC2229-Y,F(J | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sc2229omitifm-datasheets-1094.pdf | TO-226-3, TO-92-3 Long Body | TO-92MOD | 800mW | 150V | 50mA | 100nA ICBO | NPN | 70 @ 10mA 5V | 120MHz | 500mV @ 1mA, 10mA | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SA1020-Y(T6OMI,FM | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2010 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sa1020ofj-datasheets-0961.pdf | TO-226-3, TO-92-3 Long Body | TO-92MOD | 900mW | 50V | 2A | 1μA ICBO | PNP | 70 @ 500mA 2V | 100MHz | 500mV @ 50mA, 1A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SC2235-Y(T6ND,AF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sc2235ot6asnfm-datasheets-1115.pdf | TO-226-3, TO-92-3 Long Body | TO-92MOD | 900mW | 120V | 800mA | 100nA ICBO | NPN | 80 @ 100mA 5V | 120MHz | 1V @ 50mA, 500mA | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SC2655-Y,T6WNLF(J | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sc2655yt6canofm-datasheets-1130.pdf | TO-226-3, TO-92-3 Long Body | TO-92MOD | 900mW | 50V | 2A | 1μA ICBO | NPN | 70 @ 500mA 2V | 100MHz | 500mV @ 50mA, 1A |
