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ContactToshiba Semiconductor and Storage(13104)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Input Type | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | Number of Pins | Pbfree Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | Packing Method | Number of Functions | Feature | Polarity | Surface Mount | Max Power Dissipation | Voltage - Supply | Terminal Position | Terminal Form | Supply Voltage | Terminal Pitch | Base Part Number | Pin Count | Supply Voltage-Max (Vsup) | Supply Voltage-Min (Vsup) | Number of Channels | Element Configuration | Power Dissipation | Number of Elements | Subcategory | Power Supplies | Number of Circuits | Max Junction Temperature (Tj) | Ambient Temperature Range High | JESD-30 Code | Family | Supplier Device Package | Max Output Voltage | Output Voltage | Forward Current | Output Type | Max Input Current | Turn On Delay Time | Forward Current-Max | Load Capacitance | Rise Time | Turn-Off Delay Time | Logic Function | Transistor Element Material | Configuration | Transistor Application | Polarity/Channel Type | Power Dissipation-Max (Abs) | Propagation Delay | Continuous Collector Current | Quiescent Current | Voltage - Isolation | Power - Max | Reverse Breakdown Voltage | Max Breakdown Voltage | Collector Emitter Breakdown Voltage | Collector Emitter Saturation Voltage | Collector Emitter Voltage (VCEO) | Max Collector Current | Transition Frequency | Voltage - Forward (Vf) (Typ) | Current - Output High, Low | Rise / Fall Time (Typ) | Current - DC Forward (If) (Max) | Reverse Voltage (DC) | Output Current per Channel | Current Transfer Ratio | Number of Inputs | Number of Gates | Current - Output / Channel | Voltage - Output (Max) | Logic Type | Max I(ol) | Schmitt Trigger | Schmitt Trigger Input | Dark Current-Max | Max Propagation Delay @ V, Max CL | Current - Quiescent (Max) | Logic Level - Low | Logic Level - High | Current Transfer Ratio (Min) | Current Transfer Ratio (Max) | Turn On / Turn Off Time (Typ) | Vce Saturation (Max) | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Collector Base Voltage (VCBO) | Emitter Base Voltage (VEBO) | hFE Min | Current - Collector Cutoff (Max) | Transistor Type | DC Current Gain (hFE) (Min) @ Ic, Vce | Frequency - Transition | Vce Saturation (Max) @ Ib, Ic | Resistor - Base (R1) | Resistor - Emitter Base (R2) |
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| TC7PG04AFE(TE85L,F | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | TC7PG | Surface Mount | Surface Mount | -40°C~85°C | Tape & Reel (TR) | 1 (Unlimited) | CMOS | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tc7pg04afete85lf-datasheets-6085.pdf | SOT-563, SOT-666 | 6 | 6 | No | TAPE AND REEL | 2 | 0.9V~3.6V | DUAL | FLAT | 3.3V | 0.5mm | 7PG04 | 0.9V | Gates | 2 | LVP | 33.9 ns | 30pF | 4.8 ns | 1μA | 8mA 8mA | Inverter | 0.0003 A | NO | 4.8ns @ 3.3V, 30pF | 0.7V ~ 0.8V | 1.7V ~ 2V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RN1710JE(TE85L,F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | SOT-553 | 10 Weeks | YES | 2 | BIP General Purpose Small Signal | SILICON | NPN | 0.1W | 100mW | 50V | 100mA | 100nA ICBO | 2 NPN - Pre-Biased (Dual) (Emitter Coupled) | 120 @ 1mA 5V | 250MHz | 300mV @ 250μA, 5mA | 4.7k Ω | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TC7SZ38F(T5L,JF,T) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | TC7SZ | Surface Mount | -40°C~85°C | Tape & Reel (TR) | 1 (Unlimited) | 2014 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tc7sz38ft5ljft-datasheets-7066.pdf | SC-74A, SOT-753 | Open Drain | 1.65V~5.5V | 1 | - 32mA | 2 | NAND Gate | 4.3ns @ 5V, 50pF | 2μA | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RN1709JE(TE85L,F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | SOT-553 | 10 Weeks | YES | 2 | BIP General Purpose Small Signal | SILICON | NPN | 0.1W | 100mW | 50V | 100mA | 500nA | 2 NPN - Pre-Biased (Dual) (Emitter Coupled) | 70 @ 10mA 5V | 250MHz | 300mV @ 250μA, 5mA | 47k Ω | 22k Ω | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TC7W04FU(TE12L) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | 7W | Surface Mount | Surface Mount | -40°C~85°C | Digi-Reel® | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2009 | /files/toshibasemiconductorandstorage-tc7w04fklf-datasheets-8020.pdf | 8-TSSOP, 8-MSOP (0.110, 2.80mm Width) | 2.9mm | 2.8mm | 8 | 5 | no | No | TAPE AND REEL | 3 | 2V~6V | DUAL | GULL WING | 5V | 7W04 | 8 | 6V | 2V | Gates | 2/6V | R-PDSO-G8 | HC/UH | 95 ns | Buffer, Inverter | 13 ns | 1μA | 5.2mA 5.2mA | 1 | 3 | Inverter | 0.004 A | NO | 13ns @ 6V, 50pF | 0.5V ~ 1.8V | 1.5V ~ 4.2V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RN1306,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | RoHS Compliant | 2014 | SC-70, SOT-323 | 2mm | 900μm | 1.25mm | 12 Weeks | 28.009329mg | 3 | NPN | 100mW | Single | 100mA | 50V | 50V | 50V | 100mA | 50V | 5V | 80 | 500nA | NPN - Pre-Biased | 80 @ 10mA 5V | 250MHz | 300mV @ 250μA, 5mA | 4.7 k Ω | 47 k Ω | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TC74HC86APF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | TC74HC | Through Hole | Through Hole | -40°C~85°C | Tube | 1 (Unlimited) | CMOS | RoHS Compliant | 2011 | /files/toshibasemiconductorandstorage-tc74hc86apf-datasheets-1235.pdf | 14-DIP (0.300, 7.62mm) | 19.25mm | 3.5mm | 6.4mm | Lead Free | 14 | 14 | 2V~6V | DUAL | 74HC86 | Gates | 4 | 17 ns | 50pF | OR, XOR | 17 ns | 1μA | 5.2mA 5.2mA | 2 | XOR (Exclusive OR) | No | 17ns @ 6V, 50pF | 0.5V ~ 1.8V | 1.5V ~ 4.2V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RN2312(TE85L,F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | RoHS Compliant | 2009 | /files/toshiba-rn2312te85lf-datasheets-2412.pdf | SC-70, SOT-323 | 12 Weeks | 3 | No | PNP | 100mW | RN231* | Single | 100mW | -100mA | 50V | 50V | 50V | 100mA | 120 | 100nA ICBO | PNP - Pre-Biased | 120 @ 1mA 5V | 200MHz | 300mV @ 250μA, 5mA | 22 k Ω | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 4N25(SHORT,F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~100°C | Tube | 1 (Unlimited) | DC | RoHS Compliant | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-4n25shortf-datasheets-3502.pdf | 6-DIP (0.300, 7.62mm) | Lead Free | 6 | Gold, Tin | No | 250mW | 4N25 | 250mW | 1 | 30V | 70V | 80mA | Transistor with Base | 80mA | 2μs | 2500Vrms | 3V | 500mV | 30V | 100mA | 1.15V | 2μs 200μs | 3V | 100mA | 100 % | 100mA | 20% @ 10mA | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RN2411,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | Non-RoHS Compliant | TO-236-3, SC-59, SOT-23-3 | 12 Weeks | 200mW | 50V | 100mA | 100nA ICBO | PNP - Pre-Biased | 120 @ 1mA 5V | 200MHz | 300mV @ 250μA, 5mA | 10 k Ω | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TLP632(F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~100°C | Tube | 1 (Unlimited) | DC | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tlp631blf-datasheets-3720.pdf | 6-DIP (0.300, 7.62mm) | 8 Weeks | 6 | UL RECOGNIZED | 250mW | 1 | 250mW | 1 | 55V | 60mA | Transistor | 60mA | SINGLE | 5000Vrms | 5V | 400mV | 55V | 50mA | 1.15V | 2μs 3μs | 50mA | 50% @ 5mA | 600% @ 5mA | 3μs, 3μs | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RN2407,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | TO-236-3, SC-59, SOT-23-3 | 10 Weeks | 200mW | 50V | 100mA | 500nA | PNP - Pre-Biased | 80 @ 10mA 5V | 200MHz | 300mV @ 250μA, 5mA | 10 k Ω | 47 k Ω | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TLP182(BL,E | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~125°C | Tube | 1 (Unlimited) | AC, DC | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tlp182bltple-datasheets-0860.pdf | 6-SOIC (0.179, 4.55mm Width), 4 Leads | 12 Weeks | UL RECOGNIZED | No | YES | 200mW | 1 | 1 | Transistor | 50mA | 0.05A | SINGLE | 3750Vrms | 300mV | 80V | 50mA | 1.25V | 2μs 3μs | 80V | 80nA | 200% @ 5mA | 600% @ 5mA | 3μs, 3μs | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RN1115MFV,L3F | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2016 | SOT-723 | 14 Weeks | VESM | 150mW | 50V | 100mA | 500nA | NPN - Pre-Biased | 50 @ 10mA 5V | 250MHz | 300mV @ 250μA, 5mA | 2.2 kOhms | 10 kOhms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TLP385(BL,E | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~110°C | Tube | 1 (Unlimited) | DC | RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tlp385blle-datasheets-4649.pdf | 6-SOIC (0.295, 7.50mm Width), 4 Leads | 12 Weeks | 4 | 1 | Transistor | 5000Vrms | 1.25V | 2μs 3μs | 50mA | 80V | 200% @ 5mA | 600% @ 5mA | 3μs, 3μs | 300mV | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RN1317(TE85L,F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | RoHS Compliant | 2009 | SC-70, SOT-323 | 12 Weeks | 3 | No | NPN | 100mW | RN131* | Single | 100mW | 100mA | 50V | 50V | 50V | 100mA | 30 | 500nA | NPN - Pre-Biased | 30 @ 10mA 5V | 250MHz | 300mV @ 250μA, 5mA | 10 k Ω | 4.7 k Ω | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TLP183(GR,E | Toshiba Semiconductor and Storage | $0.40 |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~125°C | Tube | 1 (Unlimited) | DC | RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tlp183bltple-datasheets-6889.pdf | 6-SOIC (0.179, 4.55mm Width), 4 Leads | 12 Weeks | UL RECOGNIZED | No | YES | 200mW | 1 | 1 | Transistor | 50mA | 0.05A | SINGLE | 3750Vrms | 300mV | 80V | 50mA | 1.25V | 2μs 3μs | 80V | 80nA | 100% @ 5mA | 300% @ 5mA | 3μs, 3μs | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RN1444ATE85LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 2009 | TO-236-3, SC-59, SOT-23-3 | S-Mini | 200mW | 20V | 300mA | 100nA ICBO | NPN - Pre-Biased | 200 @ 4mA 2V | 30MHz | 100mV @ 3mA, 30mA | 2.2 kOhms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TLP785(GR-LF6,F | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | Surface Mount | -55°C~110°C | Tape & Reel (TR) | Not Applicable | DC | RoHS Compliant | 2015 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tlp785f-datasheets-5863.pdf | 4-SMD, Gull Wing | 12 Weeks | 4 | No | 240mW | 1 | 240mW | 60mA | Transistor | 25mA | 5000Vrms | 5V | 400mV | 80V | 10mA | 1.15V | 2μs 3μs | 50mA | 80V | 100% @ 5mA | 300% @ 5mA | 3μs, 3μs | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RN1106CT(TPL3) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 2014 | /files/toshibasemiconductorandstorage-rn1103cttpl3-datasheets-8129.pdf | SC-101, SOT-883 | unknown | YES | 1 | BIP General Purpose Small Signal | SILICON | NPN | 0.05W | 50mW | 20V | 50mA | 500nA | NPN - Pre-Biased | 120 @ 10mA 5V | 150mV @ 250μA, 5mA | 4.7 k Ω | 47 k Ω | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TLP291(TP,E) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~110°C | Tape & Reel (TR) | 1 (Unlimited) | DC | RoHS Compliant | 2014 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tlp291tpe-datasheets-7915.pdf | 4-SOIC (0.179, 4.55mm Width) | 12 Weeks | 4 | UL RECOGNIZED | TR | 200mW | 1 | 1 | 80V | 50mA | Transistor | SINGLE | 3750Vrms | 300mV | 300mV | 50mA | 1.25V | 4μs 7μs | 50mA | 50000nA | 50% @ 5mA | 400% @ 5mA | 7μs, 7μs | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RN1402S,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2014 | TO-236-3, SC-59, SOT-23-3 | 3 | 59 | BUILT IN BIAS RESISTANCE RATIO IS 1 | unknown | NPN | 200mW | DUAL | GULL WING | RN140* | 200mW | 1 | R-PDSO-G3 | SILICON | SINGLE WITH BUILT-IN RESISTOR | SWITCHING | 100mA | 50V | 50V | 300mV | 100mA | 250MHz | 500nA | NPN - Pre-Biased | 50 @ 10mA 5V | 250MHz | 300mV @ 250μA, 5mA | 10 k Ω | 10 k Ω | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TLP292(GR-TPL,E | Toshiba Semiconductor and Storage | $0.50 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~125°C | Tape & Reel (TR) | 1 (Unlimited) | AC, DC | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tlp292gbtple-datasheets-6962.pdf | 4-SOIC (0.179, 4.55mm Width) | 2.3mm | 12 Weeks | 4 | yes | No | 200mW | 1 | 200mW | 1 | 135°C | 125°C | 80V | 10mA | Transistor | 50mA | 3 μs | 3 μs | SINGLE | 3750Vrms | 300mV | 80V | 50mA | 1.25V | 2μs 3μs | 50mA | 50000nA | 100% @ 5mA | 300% @ 5mA | 3μs, 3μs | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RN2105CT(TPL3) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 2014 | SC-101, SOT-883 | YES | 1 | BIP General Purpose Small Signals | SILICON | PNP | 0.05W | 50mW | 20V | 50mA | 500nA | PNP - Pre-Biased | 120 @ 10mA 5V | 150mV @ 250μA, 5mA | 2.2 k Ω | 47 k Ω | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TLP385(D4GB-TL,E | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~110°C | Tape & Reel (TR) | 1 (Unlimited) | DC | RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tlp385blle-datasheets-4649.pdf | 6-SOIC (0.295, 7.50mm Width), 4 Leads | 12 Weeks | 4 | 1 | Transistor | 5000Vrms | 1.25V | 2μs 3μs | 50mA | 80V | 100% @ 5mA | 600% @ 5mA | 3μs, 3μs | 300mV | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RN1117MFV,L3F | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2016 | SOT-723 | 12 Weeks | VESM | 150mW | 50V | 100mA | 500nA | NPN - Pre-Biased | 30 @ 10mA 5V | 250MHz | 300mV @ 500μA, 5mA | 10 kOhms | 4.7 kOhms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TLP385(D4BLLTR,E | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~110°C | Tape & Reel (TR) | 1 (Unlimited) | DC | RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tlp385blle-datasheets-4649.pdf | 6-SOIC (0.295, 7.50mm Width), 4 Leads | 12 Weeks | 4 | 1 | Transistor | 5000Vrms | 1.25V | 2μs 3μs | 50mA | 80V | 200% @ 5mA | 400% @ 5mA | 3μs, 3μs | 300mV | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RN2111MFV,L3F | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2016 | SOT-723 | 12 Weeks | 150mW | 50V | 100mA | 100nA ICBO | PNP - Pre-Biased | 120 @ 1mA 5V | 300mV @ 250μA, 5mA | 10 k Ω | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 4N36(SHORT,F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~100°C | Tube | 1 (Unlimited) | DC | RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-4n36shortf-datasheets-2670.pdf | 6-DIP (0.300, 7.62mm) | 12 Weeks | 6 | 300mW | 4N36 | 1 | 30V | 10mA | Transistor with Base | 60mA | 2500Vrms | 300mV | 30V | 100mA | 1.15V | 60mA | 100mA | 100 % | 40% @ 10mA | 3μs, 3μs | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RN2115,LF(CT | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-rn2114te85lf-datasheets-6983.pdf | SC-75, SOT-416 | 18 Weeks | PNP | 100mW | -100mA | -50V | 50V | 100mA | -6V | 50 | 500nA | PNP - Pre-Biased | 50 @ 10mA 5V | 200MHz | 300mV @ 250μA, 5mA | 2.2 k Ω | 10 k Ω |
