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ContactToshiba Semiconductor and Storage(13104)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Capacitance | Lead Free | Number of Terminations | Factory Lead Time | Weight | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | Voltage - Input (Max) | Applications | Polarity | Surface Mount | Max Power Dissipation | Voltage - Supply | Terminal Position | Terminal Form | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Power Dissipation | Number of Elements | Subcategory | Number of Circuits | Gain | JESD-30 Code | Supplier Device Package | Max Output Current | Output Voltage | Output Current | Forward Current | Forward Voltage | Output Type | Max Surge Current | Max Reverse Leakage Current | Configuration | Polarity/Channel Type | Power Dissipation-Max (Abs) | Application | Quiescent Current | Speed | Output Configuration | Power - Max | Diode Element Material | Power Dissipation-Max | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Number of Phases | Output Current-Max | Transition Frequency | Reverse Voltage (DC) | Channel Type | Current - Supply (Max) | Current - Quiescent (Iq) | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Output | Voltage - Output (Min/Fixed) | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Number of Regulators | Protection Features | Voltage Dropout (Max) | PSRR | Translator Type | Voltage - VCCA | Voltage - VCCB | Current - Average Rectified (Io) | Operating Temperature - Junction | Diode Configuration | Transistor Type | DC Current Gain (hFE) (Min) @ Ic, Vce | Noise Figure (dB Typ @ f) | Frequency - Transition |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| TA58L05S,COMTQ(M | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | -40°C~105°C | Bulk | 1 (Unlimited) | 2013 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ta58l05sapnqm-datasheets-3075.pdf | TO-220-3 Full Pack | 29V | TO-220NIS | Fixed | Positive | 50mA | 1mA | 250mA | 5V | 1 | Over Current, Over Temperature | 0.4V @ 200mA | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TA58L12S(FJTN,AQ) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | -40°C~105°C | Bulk | 1 (Unlimited) | 2013 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ta58l05sapnqm-datasheets-3075.pdf | TO-220-3 Full Pack | 29V | TO-220NIS | Fixed | Positive | 50mA | 1.2mA | 250mA | 12V | 1 | Over Current, Over Temperature | 0.4V @ 200mA | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TA78L005AP(TORI,FM | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | -30°C~85°C | Bulk | 1 (Unlimited) | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ta78l015apfm-datasheets-4584.pdf | TO-226-3, TO-92-3 Long Body | 35V | LSTM | Fixed | Positive | 6mA | 150mA | 5V | 1 | 1.7V @ 40mA Typ | 49dB (120Hz) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TA78DS05CP(MBS1,FM | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | -40°C~85°C | Bulk | 1 (Unlimited) | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ta78ds05bpfj-datasheets-3143.pdf | TO-226-3, TO-92-3 Long Body | 33V | LSTM | Fixed | Positive | 1mA | 1mA | 30mA | 5V | 1 | Over Current, Over Temperature, Over Voltage, Transient Voltage | 0.3V @ 10mA | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TA78L015AP,F(J | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | -30°C~85°C | Bulk | 1 (Unlimited) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ta78l015apfm-datasheets-4584.pdf | TO-226-3, TO-92-3 Long Body | 35V | LSTM | 15V | Fixed | Positive | 6.5mA | 150mA | 15V | 1 | Over Current, Over Temperature | 1.7V @ 40mA Typ | 40dB (120Hz) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TA78L005AP,HOTIF(M | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | -30°C~85°C | Bulk | 1 (Unlimited) | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ta78l015apfm-datasheets-4584.pdf | TO-226-3, TO-92-3 Long Body | 35V | LSTM | Fixed | Positive | 6mA | 150mA | 5V | 1 | 1.7V @ 40mA Typ | 49dB (120Hz) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TA58L12S,WNLQ(J | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | -40°C~105°C | Bulk | 1 (Unlimited) | 2013 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ta58l05sapnqm-datasheets-3075.pdf | TO-220-3 Full Pack | 29V | Fixed | Positive | 50mA | 1.2mA | 250mA | 12V | 1 | Over Current, Over Temperature | 0.4V @ 200mA | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TA78L005AP(TE6,F,M | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -30°C~85°C | Bulk | 1 (Unlimited) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ta78l015apfm-datasheets-4584.pdf | TO-226-3, TO-92-3 Long Body | 3 | No | 35V | 800mW | 800mW | 150mA | 5V | Fixed | 6mA | Positive | 1 | 1.7V @ 40mA Typ | 49dB (120Hz) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TA78L075AP,F(J | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | -30°C~85°C | Bulk | 1 (Unlimited) | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ta78l015apfm-datasheets-4584.pdf | TO-226-3, TO-92-3 Long Body | 35V | Fixed | Positive | 6.5mA | 150mA | 7.5V | 1 | Over Current | 1.7V @ 40mA Typ | 45dB (120Hz) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TC7SPN334L6X,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | TC7SPN | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2013 | 6-UFDFN | 12 Weeks | 6 | 1 | Non-Inverted | Unidirectional | Voltage Level | 1.1V~2.7V | 1.65V~3.6V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TB6865AFG | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C | Tray | 1 (Unlimited) | RoHS Compliant | 2015 | 100-LQFP | 16 Weeks | 100 | Wireless Power Transmitter | 4.5V~14V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HN1D01FU,LF(T | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | RoHS Compliant | 6-TSSOP, SC-88, SOT-363 | 12 Weeks | Small Signal =< 200mA (Io), Any Speed | 4ns | Standard | 80V | 500nA @ 80V | 1.2V @ 100mA | 100mA | 125°C Max | 2 Pair Common Anode | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1SS308(TE85L,F | Toshiba Semiconductor and Storage | $0.35 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 125°C | -55°C | RoHS Compliant | 2009 | SC-74A, SOT-753 | 12 Weeks | 5 | EAR99 | No | 200mW | Common Anode | Other Diodes | 100mA | 2A | 500nA | Small Signal =< 200mA (Io), Any Speed | 500nA | 85V | 2A | 4 ns | 1.6 ns | Standard | 80V | 100mA | 500nA @ 80V | 1.2V @ 100mA | 125°C Max | 4 Common Anode | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CUS15S30,H3F | Toshiba Semiconductor and Storage | $0.30 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 125°C | -55°C | RoHS Compliant | 2014 | SC-76, SOD-323 | 12 Weeks | 2 | Silver, Tin | Single | USC | Fast Recovery =< 500ns, > 200mA (Io) | 500μA | 30V | 5A | Schottky | 30V | 1.5A | 200pF @ 0V 1MHz | 30V | 500μA @ 30V | 400mV @ 1A | 1.5A | 125°C Max | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1SS404,H3F | Toshiba Semiconductor and Storage | $0.18 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 100°C | -40°C | RoHS Compliant | 2014 | SC-76, SOD-323 | 12 Weeks | yes | Silver, Tin | unknown | Single | 300mA | Fast Recovery =< 500ns, > 200mA (Io) | 25V | Schottky | 20V | 300mA | 46pF @ 0V 1MHz | 50μA @ 20V | 450mV @ 300mA | 125°C Max | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1SS226,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 125°C | -55°C | RoHS Compliant | 2017 | TO-236-3, SC-59, SOT-23-3 | 3 | 12 Weeks | EAR99 | No | 8541.10.00.70 | DUAL | GULL WING | 2 | R-PDSO-G3 | 100mA | Small Signal =< 200mA (Io), Any Speed | SILICON | 0.15W | 85V | 2A | 4 ns | Standard | 0.1A | 80V | 500nA @ 80V | 1.2V @ 100mA | 125°C Max | 1 Pair Series Connection | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1SS184S,LF(D | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2014 | TO-236-3, SC-59, SOT-23-3 | 3 | EAR99 | 8541.10.00.70 | DUAL | GULL WING | 125°C | Common Cathode | 2 | R-PDSO-G3 | Small Signal =< 200mA (Io), Any Speed | SILICON | 0.15W | 4ns | Standard | 80V | 100mA | 0.1A | 500nA @ 80V | 1.2V @ 100mA | 125°C Max | 1 Pair Common Cathode | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CRS11(TE85L,Q,M) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 125°C | -40°C | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshiba-crs11te85lqm-datasheets-2759.pdf | SOD-123F | 12 Weeks | 2 | No | CRS11 | Single | S-FLAT (1.6x3.5) | 1A | Fast Recovery =< 500ns, > 200mA (Io) | 1.5mA | 30V | 20A | Schottky | 30V | 1A | 30V | 30V | 1.5mA @ 30V | 360mV @ 1A | 1A | -40°C~125°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TBAS16,LM | Toshiba Semiconductor and Storage | $0.13 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tbav70lm-datasheets-8370.pdf | SOT-23-3 Flat Leads | 12 Weeks | SOT-23-3 | Standard Recovery >500ns, > 200mA (Io) | Standard | 80V | 215mA | 80V | 215mA | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CBS05F30,L3F | Toshiba Semiconductor and Storage | $2.37 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | SOD-882 | 12 Weeks | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 118pF @ 0V 1MHz | 30V | 50μA @ 30V | 500mA | 125°C Max | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CBS10F40,L3F | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-cbs10f40l3f-datasheets-3894.pdf | SOD-882 | 12 Weeks | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 74pF @ 0V 1MHz | 40V | 20μA @ 40V | 700mV @ 1A | 1A | 150°C Max | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CUS10I30A(TE85L,QM | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Tape & Reel (TR) | 150°C | -55°C | RoHS Compliant | 2011 | SC-76, SOD-323 | 12 Weeks | No | Single | 1A | Fast Recovery =< 500ns, > 200mA (Io) | 60μA | 30V | 20A | Schottky | 50pF @ 10V 1MHz | 60μA @ 30V | 390mV @ 700mA | 150°C Max | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CMS17(TE12L,Q,M) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -40°C | RoHS Compliant | 2017 | SOD-128 | 12 Weeks | 2 | Single | 2A | Fast Recovery =< 500ns, > 200mA (Io) | 100μA | 30V | 30A | Schottky | 90pF @ 10V 1MHz | 100μA @ 30V | 480mV @ 2A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CRH01(TE85R,Q,M) | Toshiba Semiconductor and Storage | $0.41 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -40°C | RoHS Compliant | 2006 | SOD-123F | 12 Weeks | 2 | No | CRH01 | Single | S-FLAT (1.6x3.5) | 1A | 980mV | 15A | Fast Recovery =< 500ns, > 200mA (Io) | 10μA | 200V | 15A | 200V | 35 ns | 35 ns | Standard | 200V | 1A | 200V | 10μA @ 200V | 980mV @ 1A | 1A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CRS15I30B(TE85L,QM | Toshiba Semiconductor and Storage | $0.40 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2014 | SOD-123F | 12 Weeks | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 82pF @ 10V 1MHz | 30V | 100μA @ 30V | 400mV @ 1.5A | 1.5A | 150°C Max | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CMS03(TE12L) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -40°C | Non-RoHS Compliant | 2004 | 30V | 3A | SOD-128 | 190pF | Contains Lead | 2 | no | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | Standard | DUAL | FLAT | CMS03 | 2 | Single | 1 | Rectifier Diodes | R-PDSO-F2 | 3A | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 500μA | 30V | 40A | Schottky | 30V | 3A | 1 | 500μA @ 30V | 450mV @ 3A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CLH07(TE16L,NMB,Q) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Bulk | 1 (Unlimited) | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-clh07te16lnmbq-datasheets-2704.pdf | L-FLAT™ | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | Standard | 400V | 10μA @ 400V | 1.8V @ 5A | 5A DC | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CLH03(TE16R,Q) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Bulk | 1 (Unlimited) | RoHS Compliant | 2017 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-clh03te16lq-datasheets-2694.pdf | L-FLAT™ | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | Standard | 400V | 3A DC | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TRS8E65C,S1Q | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -55°C | RoHS Compliant | 2014 | TO-220-2 | 12 Weeks | 6.000006g | 2 | No | Single | TO-220-2L | 8A | 1.7V | No Recovery Time > 500mA (Io) | 40A | 90μA | 650V | 40A | 0ns | Silicon Carbide Schottky | 650V | 8A | 44pF @ 650V 1MHz | 650V | 90μA @ 650V | 1.7V @ 8A | 8A DC | 175°C Max | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MT3S111(TE85L,F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | TO-236-3, SC-59, SOT-23-3 | 12 Weeks | EAR99 | YES | Other Transistors | 12dB | Single | NPN | 0.7W | 700mW | 9000MHz | 6V | 100mA | NPN | 200 @ 30mA 5V | 1.2dB @ 1GHz | 11.5GHz |
