Toshiba Semiconductor and Storage(13104)

Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Part Status Type Series Mount Mounting Type Operating Temperature Packaging Size / Dimension Moisture Sensitivity Level (MSL) Termination Max Operating Temperature Min Operating Temperature Technology Operating Mode RoHS Status Published Datasheet Current Rating Package / Case Capacitance Height Lead Free Number of Terminations Factory Lead Time Approval Agency Number of Pins ECCN Code Radiation Hardening Manufacturer Package Identifier Reach Compliance Code HTS Code Capacitance @ Frequency Applications Surface Mount Max Power Dissipation Voltage - Supply Terminal Position Terminal Form Peak Reflow Temperature (Cel) Base Part Number Operating Temperature (Max) Number of Channels Element Configuration Time@Peak Reflow Temperature-Max (s) Power Dissipation Number of Elements Subcategory Max Junction Temperature (Tj) Supplier Device Package Input Capacitance Memory Size Turn On Delay Time Optoelectronic Device Type Turn-Off Delay Time Continuous Drain Current (ID) Gate to Source Voltage (Vgs) Working Voltage Transistor Element Material Configuration Case Connection Transistor Application Polarity/Channel Type Power Dissipation-Max (Abs) Drain to Source Voltage (Vdss) DS Breakdown Voltage-Min FET Technology Breakdown Voltage Voltage - Isolation Power - Max Power Dissipation-Max Rep Pk Reverse Voltage-Max Power Line Protection Voltage - Breakdown (Min) Current - Peak Pulse (10/1000μs) Voltage - Clamping (Max) @ Ipp Voltage - Reverse Standoff (Typ) Unidirectional Channels Clamping Voltage Peak Pulse Current Reverse Standoff Voltage Direction Power - Peak Pulse Bidirectional Channels Reference Voltage Voltage Tol-Max Working Test Current Dynamic Impedance-Max Transition Frequency Voltage - Forward (Vf) (Typ) Current - Output High, Low Rise / Fall Time (Typ) Current - DC Forward (If) (Max) Propagation Delay tpLH / tpHL (Max) Common Mode Transient Immunity (Min) Voltage - Output Supply Current - Peak Output Drain Current-Max (Abs) (ID) Drain-source On Resistance-Max Drain to Source Breakdown Voltage Voltage - Collector Emitter Breakdown (Max) Current - Collector (Ic) (Max) FET Type Input Capacitance (Ciss) (Max) @ Vds Current - Collector Cutoff (Max) Transistor Type DC Current Gain (hFE) (Min) @ Ic, Vce Frequency - Transition Vce Saturation (Max) @ Ib, Ic Form Factor Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Current - Continuous Drain (Id) @ 25°C Gate Charge (Qg) (Max) @ Vgs FET Feature Rds On Max Drive Voltage (Max Rds On,Min Rds On) Vgs (Max)
2SA1721RTE85LF 2SA1721RTE85LF Toshiba Semiconductor and Storage
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download Surface Mount 150°C TJ Tape & Reel (TR) 1 (Unlimited) RoHS Compliant TO-236-3, SC-59, SOT-23-3 14 Weeks unknown YES Other Transistors Single PNP 0.15W 150mW 50MHz 300V 100mA 100nA ICBO PNP 30 @ 20mA 10V 50MHz 500mV @ 2mA, 20mA
HDEPX10GEA51F HDEPX10GEA51F Toshiba Semiconductor and Storage
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download 3 (168 Hours) ROHS3 Compliant 6 Weeks
HDEPW21GEA51F HDEPW21GEA51F Toshiba Semiconductor and Storage
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SSM6P36TU,LF SSM6P36TU,LF Toshiba Semiconductor and Storage
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download Surface Mount 150°C Tape & Reel (TR) 1 (Unlimited) RoHS Compliant 6-SMD, Flat Leads 12 Weeks NOT SPECIFIED NOT SPECIFIED 20V 500mW Ta 2 P-Channel (Dual) 43pF @ 10V 1.31 Ω @ 100mA, 4.5V 1V @ 1mA 330mA Ta 1.2nC @ 4V Logic Level Gate, 1.5V Drive
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download Surface Mount Surface Mount 150°C TJ Tape & Reel (TR) 1 (Unlimited) ENHANCEMENT MODE RoHS Compliant 2009 /files/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf SOT-563, SOT-666 600μm 6 16 Weeks 6 No SON6-P-0.50 150mW FLAT SSM6N44 2 Dual 150mW 2 150°C 50 ns 200 ns 100mA 20V SILICON SWITCHING 30V METAL-OXIDE SEMICONDUCTOR 0.1A 7Ohm 30V 2 N-Channel (Dual) 8.5pF @ 3V 4 Ω @ 10mA, 4V 1.5V @ 100μA Logic Level Gate
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download U-MOSVI Surface Mount Surface Mount 150°C TJ Tape & Reel (TR) 1 (Unlimited) MOSFET (Metal Oxide) RoHS Compliant SOT-23-3 Flat Leads 12 Weeks 3.9A 20V 1W Ta P-Channel 290pF @ 10V 93m Ω @ 1.5A, 4.5V 1V @ 1mA 3.9A Ta 4.6nC @ 4.5V 1.5V 4.5V ±8V
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download U-MOSVI Surface Mount 150°C Tape & Reel (TR) 1 (Unlimited) MOSFET (Metal Oxide) ENHANCEMENT MODE RoHS Compliant SOT-563, SOT-666 12 Weeks EAR99 YES Other Transistors Single 30V 500mW Ta 3.6A P-Channel 560pF @ 15V 50m Ω @ 3A, 10V 1.2V @ 1mA 3.6A Ta 7.9nC @ 4.5V 1.8V 10V ±12V
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download U-MOSVII-H Surface Mount Surface Mount 150°C TA Tape & Reel (TR) 1 (Unlimited) MOSFET (Metal Oxide) ENHANCEMENT MODE RoHS Compliant 2014 3-XFDFN 3 12 Weeks 3 unknown BOTTOM NO LEAD NOT SPECIFIED NOT SPECIFIED 1 800mA SILICON SINGLE WITH BUILT-IN DIODE DRAIN SWITCHING 20V 20V 500mW Ta 0.8A N-Channel 55pF @ 10V 235m Ω @ 800mA, 4.5V 1V @ 1mA 800mA Ta 1nC @ 4.5V 1.5V 4.5V ±8V
DF2S5.6ASL,L3F DF2S5.6ASL,L3F Toshiba Semiconductor and Storage $0.16
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download Zener Surface Mount Surface Mount Tape & Reel (TR) 1 (Unlimited) RoHS Compliant https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-df2s56asll3f-datasheets-2825.pdf 0201 (0603 Metric) 12 Weeks 40pF @ 1MHz General Purpose No 5.3V 3.5V Max 1 3.5V
SSM6P36FE,LM SSM6P36FE,LM Toshiba Semiconductor and Storage
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download Surface Mount Surface Mount 150°C TJ Tape & Reel (TR) 1 (Unlimited) RoHS Compliant 2009 /files/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf SOT-563, SOT-666 16 Weeks 150mW SSM6P36 ES6 (1.6x1.6) 43pF 330mA 20V 150mW 2 P-Channel (Dual) 43pF @ 10V 1.31Ohm @ 100mA, 4.5V 1V @ 1mA 330mA 1.2nC @ 4V Logic Level Gate 1.31 Ω
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download Surface Mount Surface Mount Tape & Reel (TR) 1 (Unlimited) RoHS Compliant 2016 https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-df3d36fulf-datasheets-2283.pdf SC-70, SOT-323 12 Weeks 7pF @ 1MHz No 32V 28V 2
SSM6N37CTD(TPL3) SSM6N37CTD(TPL3) Toshiba Semiconductor and Storage
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download Surface Mount Surface Mount 150°C TJ Tape & Reel (TR) 1 (Unlimited) RoHS Compliant 2009 /files/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf 6-SMD, Flat Leads 140mW SSM6N37 2 Dual 18 ns 36 ns 250mA 1V 20V 20V 2 N-Channel (Dual) 12pF @ 10V 2.2 Ω @ 100mA, 4.5V 1V @ 1mA Logic Level Gate
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TPH3R70APL,L1Q TPH3R70APL,L1Q Toshiba Semiconductor and Storage
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download U-MOSIX-H Surface Mount 175°C Tape & Reel (TR) 1 (Unlimited) MOSFET (Metal Oxide) 8-PowerVDFN 12 Weeks 100V 960mW Ta 170W Tc N-Channel 6300pF @ 50V 3.7m Ω @ 45A, 10V 2.5V @ 1mA 90A Tc 67nC @ 10V 4.5V 10V ±20V
DF3D6.8MFV(TL3,T) DF3D6.8MFV(TL3,T) Toshiba Semiconductor and Storage
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DF3A3.6CT(TPL3) DF3A3.6CT(TPL3) Toshiba Semiconductor and Storage
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SSM3K36TU,LF SSM3K36TU,LF Toshiba Semiconductor and Storage
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download Surface Mount 150°C Tape & Reel (TR) 1 (Unlimited) MOSFET (Metal Oxide) RoHS Compliant 3-SMD, Flat Lead 12 Weeks NOT SPECIFIED NOT SPECIFIED 20V 800mW Ta N-Channel 46pF @ 10V 630m Ω @ 200mA, 5V 1V @ 1mA 500mA Ta 1.23nC @ 4V 1.5V 5V ±10V
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SSM3J64CTC,L3F SSM3J64CTC,L3F Toshiba Semiconductor and Storage
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download U-MOSVII Surface Mount 150°C Tape & Reel (TR) 1 (Unlimited) MOSFET (Metal Oxide) RoHS Compliant SC-101, SOT-883 12 Weeks 12V 500mW Ta P-Channel 50pF @ 10V 370m Ω @ 600mA, 4.5V 1V @ 1mA 1A Ta 1.2V 4.5V ±10V
TLP250(D4-TP5,NP,F TLP250(D4-TP5,NP,F Toshiba Semiconductor and Storage
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download Tape & Reel (TR) 1 (Unlimited)

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