Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Supply Current | Operating Mode | Height Seated (Max) | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Operating Supply Voltage | Bandwidth | Lead Free | Max Supply Current | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Max Supply Voltage | Min Supply Voltage | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Lead Length | Reach Compliance Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Polarity | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Base Part Number | Pin Count | Temperature Grade | Supply Voltage-Min (Vsup) | Number of Channels | Analog IC - Other Type | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Power Supplies | Number of Circuits | Qualification Status | JESD-30 Code | Supplier Device Package | -3db Bandwidth | Input Capacitance | Throw Configuration | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Logic Function | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | Propagation Delay | Supply Type | Min Dual Supply Voltage | Neg Supply Voltage-Nom (Vsup) | DS Breakdown Voltage-Min | Number of Outputs | High Level Output Current | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Number of Inputs | Output | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | On-State Resistance (Max) | Drain to Source Resistance | Off-state Isolation-Nom | On-state Resistance Match-Nom | Switching | Switch-off Time-Max | Feedback Cap-Max (Crss) | Neg Supply Voltage-Max (Vsup) | Neg Supply Voltage-Min (Vsup) | Switch-on Time-Max | Normal Position | Avalanche Energy Rating (Eas) | Voltage - Supply, Single/Dual (±) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Signal Current-Max | Nominal Vgs | Multiplexer/Demultiplexer Circuit | Voltage - Supply, Single (V+) | Switch Circuit | Voltage - Supply, Dual (V±) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Current - Leakage (IS(off)) (Max) | Channel Capacitance (CS(off), CD(off)) | Switch Time (Ton, Toff) (Max) | Charge Injection | Channel-to-Channel Matching (ΔRon) | Crosstalk |
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IRF530STRLPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | /files/vishaysiliconix-irf530strlpbf-datasheets-7596.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | 8 Weeks | 1.946308g | Unknown | 3 | No | 1 | Single | 3.7W | 1 | D2PAK | 670pF | 10 ns | 34ns | 24 ns | 23 ns | 14A | 20V | 100V | 3.7W Ta 88W Tc | 160mOhm | 100V | N-Channel | 670pF @ 25V | 2 V | 160mOhm @ 8.4A, 10V | 4V @ 250μA | 14A Tc | 26nC @ 10V | 160 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SJM200BIC01 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/vishay-sjm200bic01-datasheets-0086.pdf | Metal | 36V | 13V | 10 | 22V | 7V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFU9014PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/vishaysiliconix-irfr9014trpbf-datasheets-0184.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 6.73mm | 6.22mm | 2.39mm | Lead Free | 3 | 8 Weeks | 329.988449mg | Unknown | 500mOhm | 3 | yes | EAR99 | AVALANCHE RATED | No | 9.65mm | e3 | Matte Tin (Sn) | 260 | 3 | 1 | Single | 40 | 2.5W | 1 | Other Transistors | 11 ns | 63ns | 31 ns | 9.6 ns | 5.1A | 20V | SILICON | DRAIN | SWITCHING | 60V | -4V | 2.5W Ta 25W Tc | 20A | -60V | P-Channel | 270pF @ 25V | -4 V | 500m Ω @ 3.1A, 10V | 4V @ 250μA | 5.1A Tc | 12nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
DG445DY-T1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 30mA | Non-RoHS Compliant | 2009 | /files/vishaysiliconix-dg445dy-datasheets-7564.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | 1μA | 16 | 8 Weeks | 665.986997mg | 36V | 13V | 85Ohm | 16 | no | unknown | 4 | 30mA | e0 | Tin/Lead (Sn/Pb) | 640mW | GULL WING | 1.27mm | 16 | 640mW | Multiplexer or Switches | 512/+-15V | Not Qualified | 250 ns | 210 ns | 22V | 20V | Dual, Single | 7V | 4 | SEPARATE OUTPUT | 85Ohm | BREAK-BEFORE-MAKE | NO | 5V~36V ±5V~20V | 1:1 | SPST - NO | 500pA | 4pF 4pF | 250ns, 210ns | -1pC | -100dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFBF30PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irfbf30pbf-datasheets-9527.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 3.7Ohm | 3 | Tin | No | 1 | Single | 125W | 1 | TO-220AB | 1.2nF | 14 ns | 25ns | 30 ns | 90 ns | 3.6A | 20V | 900V | 4V | 125W Tc | 3.7Ohm | N-Channel | 1200pF @ 25V | 4 V | 3.7Ohm @ 2.2A, 10V | 4V @ 250μA | 3.6A Tc | 78nC @ 10V | 3.7 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SJM201BEA01 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | Non-RoHS Compliant | 2016 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SIHP28N65EF-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/vishaysiliconix-sihp28n65efge3-datasheets-9802.pdf | TO-220-3 | 3 | 21 Weeks | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | 28A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 650V | 650V | 250W Tc | TO-220AB | 87A | 0.117Ohm | 427 mJ | N-Channel | 3249pF @ 100V | 117m Ω @ 14A, 10V | 4V @ 250μA | 28A Tc | 146nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
DG611DY | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | 5nA | Non-RoHS Compliant | 2015 | /files/vishaysiliconix-dg612dyt1-datasheets-2726.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | 500MHz | Contains Lead | 1μA | 16 | 665.986997mg | 18V | 10V | 45Ohm | 16 | no | unknown | 4 | 5nA | e0 | Tin/Lead (Sn/Pb) | 600mW | GULL WING | 1.27mm | 16 | 600mW | Multiplexer or Switches | 515-3V | Not Qualified | SPST | 35 ns | 25 ns | 15V | Dual, Single | 10V | 4 | SEPARATE OUTPUT | 45Ohm | 45Ohm | BREAK-BEFORE-MAKE | NC | 10V~18V ±10V~15V | 1:1 | SPST - NC | 250pA | 3pF 2pF | 35ns, 25ns | 4pC | 2 Ω | -87dB @ 5MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SI4776DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | SkyFET®, TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TA | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/vishaysiliconix-si4776dyt1ge3-datasheets-1618.pdf | 8-SOIC (0.154, 3.90mm Width) | 27 Weeks | 540.001716mg | 8 | 1 | 2.5W | 1 | 8-SO | 10 ns | 11ns | 6 ns | 11 ns | 11.9A | 20V | 30V | 4.1W Tc | 13mOhm | N-Channel | 521pF @ 15V | 16mOhm @ 10A, 10V | 2.3V @ 1mA | 11.9A Tc | 17.5nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SJM188BIA | Vishay Siliconix |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | Non-RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SIHP30N60E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | E | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sihp30n60ee3-datasheets-9594.pdf | TO-220-3 | 10.51mm | 15.49mm | 4.65mm | Lead Free | 14 Weeks | 6.000006g | Unknown | 125mOhm | 3 | Tin | No | 1 | Single | 250W | 1 | 2.6nF | 19 ns | 32ns | 36 ns | 63 ns | 29A | 20V | 600V | 2V | 250W Tc | 125mOhm | N-Channel | 2600pF @ 100V | 125mOhm @ 15A, 10V | 4V @ 250μA | 29A Tc | 130nC @ 10V | 125 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
92042012C | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~125°C TA | Bulk | 1 (Unlimited) | CMOS | 2.54mm | Non-RoHS Compliant | 2016 | 20-LCC | 8.89mm | 8.89mm | 20 | 1 | YES | QUAD | NO LEAD | NOT SPECIFIED | 15V | 20 | 5V | 8 | SINGLE-ENDED MULTIPLEXER | NOT SPECIFIED | 1 | S-XQCC-N20 | -15V | 100Ohm | 75 dB | 15Ohm | -20V | -5V | 225ns | 8:1 | ±15V | 500pA | 3pF 26pF | 150ns, 150ns | 20pC | 15 Ω (Max) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SIHG44N65EF-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | E | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/vishaysiliconix-sihg44n65efge3-datasheets-2307.pdf | TO-247-3 | 3 | 21 Weeks | NO | 1 | R-PSFM-T3 | SILICON | SWITCHING | 650V | 650V | 417W Tc | TO-247AC | 46A | 154A | 0.073Ohm | 596 mJ | N-Channel | 5892pF @ 100V | 73m Ω @ 22A, 10V | 4V @ 250μA | 46A Tc | 278nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
92042022C | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~125°C TA | Bulk | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2016 | 20-LCC | 8.89mm | 8.89mm | 20 | 2 | YES | QUAD | NO LEAD | NOT SPECIFIED | 15V | 20 | 5V | 4 | DIFFERENTIAL MULTIPLEXER | NOT SPECIFIED | 2 | -15V | 100Ohm | 75 dB | 15Ohm | 150ns | -5V | 4:1 | SP4T | ±15V | 500pA | 3pF 14pF | 150ns, 150ns | 20pC | 15 Ω (Max) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SQA403EJ-T1_GE3 | Vishay Siliconix | $0.53 |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqa403ejt1ge3-datasheets-3338.pdf | PowerPAK® SC-70-6 | 12 Weeks | PowerPAK® SC-70-6 Single | 30V | 13.6W Tc | P-Channel | 1880pF @ 10V | 20mOhm @ 5A, 10V | 2.5V @ 250μA | 10A Tc | 33nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
90731022A | Vishay Siliconix |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | Non-RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SUP80090E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | ThunderFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sup80090ege3-datasheets-3808.pdf | TO-220-3 | 3 | 14 Weeks | Unknown | 3 | EAR99 | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | 128A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 150V | 150V | 5V | 375W Tc | TO-220AB | 240A | 0.011Ohm | 180 mJ | N-Channel | 3425pF @ 75V | 9.4m Ω @ 30A, 10V | 5V @ 250μA | 128A Tc | 95nC @ 10V | 7.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
DG2727DN-T1-E4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 85°C | -40°C | CMOS | 1μA | 0.6mm | ROHS3 Compliant | 2015 | /files/vishaysiliconix-dg2727dnt1e4-datasheets-4554.pdf | 8-UFQFN | 1.4mm | 1.4mm | 1μA | 8 | 4.3V | 1.6V | 1Ohm | 8 | yes | unknown | 2 | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | 190mW | QUAD | NO LEAD | 260 | 3V | 0.4mm | DG2727 | 8 | INDUSTRIAL | 1 | 30 | 190mW | Multiplexer or Switches | Not Qualified | SPST | 67 ns | 40 ns | Single | 2 | 58 dB | 0.1Ohm | BREAK-BEFORE-MAKE | NO | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SIHB24N65EF-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | E | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihb24n65efge3-datasheets-4523.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 21 Weeks | e3 | YES | GULL WING | 1 | R-PSSO-G2 | SILICON | SWITCHING | 650V | 650V | 250W Tc | 24A | 65A | 0.156Ohm | 691 mJ | N-Channel | 2774pF @ 100V | 156m Ω @ 12A, 10V | 4V @ 250μA | 24A Tc | 122nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
DG3516DB-T5-E1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | 1μA | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg3516dbt5e1-datasheets-4556.pdf | 10-WFBGA | 2.02mm | 490μm | 1.52mm | Lead Free | 1μA | 10 | 5.5V | 1.8V | 2.9Ohm | 10 | yes | No | 2 | 1μA | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 457mW | BOTTOM | BALL | 260 | 3V | 0.5mm | DG3516 | 10 | 1 | 40 | 457mW | Multiplexer or Switches | 3/5V | 300MHz | 51 ns | 45 ns | Single | 4 | 2 | 2.9Ohm | 54 dB | 0.25Ohm | BREAK-BEFORE-MAKE | NC | 2:1 | 1.8V~5.5V | SPDT | 2nA | 12pF | 45ns, 42ns | 1pC | 250m Ω (Max) | -78dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SIHJ6N65E-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihj6n65et1ge3-datasheets-7163.pdf | PowerPAK® SO-8 | 18 Weeks | No SVHC | 4 | EAR99 | NOT SPECIFIED | NOT SPECIFIED | 5.6A | 650V | 2V | 74W Tc | N-Channel | 596pF @ 100V | 868m Ω @ 3A, 10V | 4V @ 250μA | 5.6A Tc | 32nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
DG3001DB-T1-E1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 100nA | 0.753mm | ROHS3 Compliant | 2013 | /files/vishaysiliconix-dg3001dbt1e1-datasheets-4946.pdf | 6-MICRO FOOT®CSP | 1μA | 6 | 5.5V | 1.8V | 700mOhm | 6 | yes | No | 1 | 100nA | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 250mW | BOTTOM | BALL | 260 | 3V | 0.5mm | DG3001 | 6 | 1 | 40 | 250mW | Multiplexer or Switches | 3V | SPST | 71 ns | 59 ns | Single | 1 | 700mOhm | 70 dB | 0.01Ohm | BREAK-BEFORE-MAKE | NO | 1:1 | 1.8V~5.5V | SPST - NO | 1nA | 100pF | 71ns, 59ns | 64pC | 10m Ω | -70dB @ 100kHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFU024PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-irfu024pbf-datasheets-7718.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 6.73mm | 6.22mm | 2.39mm | Lead Free | 3 | 8 Weeks | 329.988449mg | Unknown | 100mOhm | 3 | EAR99 | No | 260 | 3 | 1 | Single | 40 | 2.5W | 1 | 13 ns | 58ns | 42 ns | 25 ns | 14A | 20V | SILICON | DRAIN | SWITCHING | 60V | 60V | 4V | 2.5W Ta 42W Tc | 56A | N-Channel | 640pF @ 25V | 100m Ω @ 8.4A, 10V | 4V @ 250μA | 14A Tc | 25nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
DG2034DQ-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 1μA | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg2034dnt1e4-datasheets-5325.pdf | 10-TFSOP, 10-MSOP (0.118, 3.00mm Width) | 3mm | 3mm | 10 | 5.5V | 1.8V | 5.5Ohm | 10 | yes | No | 1 | e3 | Matte Tin (Sn) | 320mW | DUAL | GULL WING | 260 | 3V | 0.5mm | DG2034 | 10 | 4 | 40 | 320mW | 3/5V | 1 | 35 ns | 25 ns | Multiplexer | 40 ns | Single | 4 | 5.5Ohm | 73 dB | 0.1Ohm | BREAK-BEFORE-MAKE | 0.05A | 4:1 | 1.8V~5.5V | SP4T | 1nA | 13pF 43pF | 30ns, 20ns | -4.4pC | 160m Ω | -77dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SIHD4N80E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | E | Surface Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihd4n80ege3-datasheets-8208.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 18 Weeks | D-PAK (TO-252AA) | 800V | 69W Tc | 1.1Ohm | N-Channel | 622pF @ 100V | 1.27Ohm @ 2A, 10V | 4V @ 250μA | 4.3A Tc | 32nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
DG2516DQ-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 10nA | 1.1mm | ROHS3 Compliant | 2013 | /files/vishaysiliconix-dg2516dqt1e3-datasheets-5367.pdf | 10-TFSOP, 10-MSOP (0.118, 3.00mm Width) | 3mm | 1μA | 10 | 5.5V | 1.8V | 4Ohm | 10 | yes | unknown | 2 | 10nA | e3 | Matte Tin (Sn) | 320mW | DUAL | GULL WING | 260 | 3V | 0.5mm | DG2516 | 10 | 1 | 40 | Multiplexer or Switches | 3/5V | 2 | Not Qualified | 235MHz | 70 ns | 50 ns | Single | SEPARATE OUTPUT | 4Ohm | 51 dB | 0.1Ohm | BREAK-BEFORE-MAKE | 2:1 | 1.8V~5.5V | SPDT | 1nA | 17pF | 50ns, 40ns | 49pC | 100m Ω | -74dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SQ3461EV-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2018 | /files/vishaysiliconix-sq3461evt1ge3-datasheets-9692.pdf | SOT-23-6 Thin, TSOT-23-6 | 6 | 12 Weeks | EAR99 | unknown | YES | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-G6 | SILICON | SINGLE WITH BUILT-IN DIODE | 12V | 12V | 5W Tc | MO-193AA | 8A | 0.025Ohm | 620 pF | P-Channel | 2000pF @ 6V | 25m Ω @ 7.9A, 4.5V | 1V @ 250μA | 8A Tc | 28nC @ 4.5V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
DG2711DL-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 10nA | ROHS3 Compliant | 2015 | /files/vishaysiliconix-dg2711dlt1ge3-datasheets-7686.pdf | 6-TSSOP, SC-88, SOT-363 | 3V | Lead Free | 1μA | 6 | 3.6V | 1.6V | 600mOhm | 6 | yes | Tin | No | 1 | 10nA | e3 | Non-Inverting | 250mW | DUAL | GULL WING | 260 | 1.8V | DG2711 | 6 | 1 | 40 | 250mW | Multiplexer or Switches | 60 ns | 42 ns | Single | 2 | 200mA | 1 | 600mOhm | 56 dB | BREAK-BEFORE-MAKE | 44ns | 2:1 | 1.6V~3.6V | SPDT | 1nA | 70pF | 46ns, 38ns | 28pC | 70m Ω (Max) | -56dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SI1443EDH-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/vishaysiliconix-si1443edht1ge3-datasheets-1516.pdf | 6-TSSOP, SC-88, SOT-363 | 6 | 14 Weeks | 7.512624mg | Unknown | 6 | EAR99 | No | DUAL | GULL WING | 6 | 1 | Single | 1.6W | 1 | Other Transistors | 40 ns | 64ns | 420 ns | 1.8 μs | 4A | 12V | SILICON | SWITCHING | 30V | 1.6W Ta 2.8W Tc | 4A | 0.054Ohm | -30V | P-Channel | -600 mV | 54m Ω @ 4.3A, 10V | 1.5V @ 250μA | 4A Tc | 28nC @ 10V | 10V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
DG2789DN-T1-E4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 1μA | ROHS3 Compliant | 2014 | /files/vishaysiliconix-dg2788dnt1e4-datasheets-4513.pdf | 16-WFQFN | 2.6mm | 750μm | 1.8mm | 1μA | 16 | 57.09594mg | No SVHC | 4.3V | 1.65V | 500mOhm | 16 | yes | unknown | 4 | 1μA | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | 525mW | QUAD | NO LEAD | 260 | 3V | DG2789 | 16 | 1 | 40 | 525mW | Multiplexer or Switches | Not Qualified | 72 ns | 43 ns | Single | 8 | 4 | 500mOhm | 49 dB | 0.05Ohm | BREAK-BEFORE-MAKE | 75ns | 2:1 | 1.65V~4.3V | SPDT | 1nA | 81pF | 72ns, 43ns | 87pC | 50m Ω | -96dB @ 1MHz |
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