Products
Manufacturer
RFQ
NEWS
ContactVishay Siliconix(12746)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Supply Current | Operating Mode | Height Seated (Max) | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Operating Supply Voltage | Lead Free | Max Supply Current | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Max Supply Voltage | Min Supply Voltage | Resistance | Number of Pins | Pbfree Code | ECCN Code | Contact Plating | Radiation Hardening | Reach Compliance Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Polarity | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Base Part Number | Pin Count | Number of Channels | Analog IC - Other Type | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Power Supplies | Number of Circuits | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Screening Level | Input Capacitance | Throw Configuration | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Logic Function | Transistor Element Material | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | Propagation Delay | Supply Type | Min Dual Supply Voltage | Neg Supply Voltage-Nom (Vsup) | Number of Outputs | High Level Output Current | Threshold Voltage | Power - Max | Power Dissipation-Max | Recovery Time | Number of Inputs | Output | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | On-State Resistance (Max) | Drain to Source Resistance | Off-state Isolation-Nom | On-state Resistance Match-Nom | Switching | Switch-off Time-Max | Switch-on Time-Max | Normal Position | Avalanche Energy Rating (Eas) | Voltage - Supply, Single/Dual (±) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Signal Current-Max | Nominal Vgs | Multiplexer/Demultiplexer Circuit | Voltage - Supply, Single (V+) | Switch Circuit | Voltage - Supply, Dual (V±) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Current - Leakage (IS(off)) (Max) | Channel Capacitance (CS(off), CD(off)) | Switch Time (Ton, Toff) (Max) | Charge Injection | Channel-to-Channel Matching (ΔRon) | Crosstalk |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| SI2303CDS-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si2303cdst1ge3-datasheets-4410.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.12mm | 1.4mm | Lead Free | 3 | 14 Weeks | 1.437803g | No SVHC | 190mOhm | 3 | yes | EAR99 | unknown | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 1W | 1 | Other Transistors | Not Qualified | 150°C | 4 ns | 37ns | 37 ns | 11 ns | -2.7A | 20V | SILICON | SWITCHING | 30V | -3V | 1W Ta 2.3W Tc | -30V | P-Channel | 155pF @ 15V | -3 V | 190m Ω @ 1.9A, 10V | 3V @ 250μA | 2.7A Tc | 8nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG411HSDY-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | 1μA | ROHS3 Compliant | 2013 | /files/vishaysiliconix-dg411hsdnt1e4-datasheets-3972.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | 1μA | 16 | 13 Weeks | 547.485991mg | 44V | 13V | 80Ohm | 16 | yes | unknown | 4 | e3 | MATTE TIN | 600mW | GULL WING | 260 | 15V | 1.27mm | DG411 | 16 | 1 | 40 | 600mW | Multiplexer or Switches | Not Qualified | SPST | 105 ns | 105 ns | 22V | 15V | Dual, Single | 7V | -15V | 4 | SEPARATE OUTPUT | 35Ohm | 91 dB | BREAK-BEFORE-MAKE | 90ns | NC | 12V ±5V~20V | 1:1 | SPST - NC | 250pA | 12pF 12pF | 105ns, 80ns | 22pC | -88dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI9936BDY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si9936bdyt1ge3-datasheets-2479.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 186.993455mg | 35mOhm | 8 | No | 1.1W | SI9936 | 2 | Dual | 1.1W | 2 | 8-SO | 10 ns | 15ns | 15 ns | 25 ns | 6A | 20V | 30V | 1.1W | 35mOhm | 30V | 2 N-Channel (Dual) | 35mOhm @ 6A, 10V | 3V @ 250μA | 4.5A | 13nC @ 10V | Logic Level Gate | 35 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG407BDN-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 30μA | ROHS3 Compliant | 2012 | /files/vishaysiliconix-dg406bdnt1e3-datasheets-9186.pdf | 28-LCC (J-Lead) | 12.57mm | 3.69mm | 12.57mm | 15V | 500μA | 28 | 12 Weeks | 1.182714g | 36V | 7.5V | 100Ohm | 28 | yes | unknown | 1 | e3 | Matte Tin (Sn) | 450mW | QUAD | J BEND | 260 | 15V | DG407 | 28 | 8 | 40 | 450mW | 2 | Not Qualified | 125 ns | 94 ns | 20V | Multiplexer | 148 ns | Dual, Single | 5V | -15V | 16 | 60Ohm | 86 dB | 3Ohm | BREAK-BEFORE-MAKE | 12V ±5V~20V | 0.03A | 8:1 | 500pA | 6pF 54pF | 107ns, 88ns | 11pC | 3 Ω | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VQ1001P-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2009 | /files/vishaysiliconix-vq1001p2-datasheets-6118.pdf | Lead Free | 14 | No | 2W | 2W | 4 | 14-DIP | 110pF | 830mA | 20V | 30V | 2W | 1.75Ohm | 4 N-Channel | 110pF @ 15V | 1.75Ohm @ 200mA, 5V | 2.5V @ 1mA | 830mA | Logic Level Gate | 1.75 Ω | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG2012DL-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 10nA | ROHS3 Compliant | 2009 | 6-TSSOP, SC-88, SOT-363 | 2.2mm | 1mm | 1.35mm | Lead Free | 1μA | 6 | No SVHC | 5.5V | 1.8V | 1.8Ohm | 6 | yes | Tin | No | 1 | 10nA | e3 | Non-Inverting | 250mW | DUAL | GULL WING | 260 | 2V | DG2012 | 6 | 1 | 40 | 250mW | Multiplexer or Switches | 63 ns | 45 ns | Single | 2 | 100mA | 1 | 1.8Ohm | 1Ohm | 63 dB | 0.25Ohm | BREAK-BEFORE-MAKE | 2:1 | 1.8V~5.5V | SPDT | 500pA | 20pF | 38ns, 32ns | 20pC | 250m Ω (Max) | -64dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI3483DDV-T1-GE3 | Vishay Siliconix | $0.42 |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si3483ddvt1ge3-datasheets-6957.pdf | SOT-23-6 Thin, TSOT-23-6 | 14 Weeks | 6-TSOP | 30V | 2W Ta 3W Tc | P-Channel | 580pF @ 15V | 31.2mOhm @ 5A, 10V | 2.2V @ 250μA | 6.4A Ta 8A Tc | 14.5nC @ 10V | 4.5V 10V | +16V, -20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG407DN | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2015 | /files/vishaysiliconix-dg406dnt1e3-datasheets-9986.pdf | 28-LCC (J-Lead) | 12.57mm | 3.69mm | 12.57mm | 15V | 500μA | 28 | 1.182714g | Unknown | 44V | 7.5V | 50Ohm | 28 | no | 1 | 50μA | e0 | Tin/Lead (Sn/Pb) | 450mW | QUAD | J BEND | 28 | 8 | DIFFERENTIAL MULTIPLEXER | 450mW | Multiplexer or Switches | 2 | Not Qualified | 600 ns | 300 ns | 20V | 350 ns | Dual, Single | 5V | 16 | 100Ohm | 100Ohm | BREAK-BEFORE-MAKE | 12V ±5V~20V | 8:1 | 500pA | 8pF 65pF | 200ns, 150ns | 15pC | 5 Ω | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4103DY-T1-GE3 | Vishay Siliconix | $0.62 |
Min: 1 Mult: 1 |
download | TrenchFET® Gen III | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/vishaysiliconix-si4103dyt1ge3-datasheets-7798.pdf | 8-SOIC (0.154, 3.90mm Width) | 14 Weeks | 8-SO | 30V | 2.5W Ta 5.2W Tc | P-Channel | 5200pF @ 15V | 7.9mOhm @ 10A, 10V | 2V @ 250μA | 14A Ta 16A Tc | 140nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG417DJ | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2008 | /files/vishaysiliconix-dg417dyt1e3-datasheets-1245.pdf | 8-DIP (0.300, 7.62mm) | 10.92mm | 3.81mm | 7.11mm | 1μA | 8 | 8 Weeks | 930.006106mg | 36V | 13V | 35Ohm | 8 | no | unknown | 1 | e0 | Tin/Lead (Sn/Pb) | 400mW | 2.54mm | 8 | 400mW | Multiplexer or Switches | Not Qualified | 175 ns | 145 ns | 22V | 15V | Dual, Single | 7V | 1 | 35Ohm | 20mOhm | BREAK-BEFORE-MAKE | NC | 12V ±15V | 1:1 | SPST - NC | 250pA | 8pF 8pF | 175ns, 145ns | 60pC | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIA110DJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sia110djt1ge3-datasheets-8313.pdf | PowerPAK® SC-70-6 | 14 Weeks | PowerPAK® SC-70-6 Single | 100V | 3.5W Ta 19W Tc | N-Channel | 550pF @ 50V | 55mOhm @ 4A, 10V | 4V @ 250μA | 5.4A Ta 12A Tc | 13nC @ 10V | 7.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG444BDJ | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | 5.08mm | ROHS3 Compliant | /files/vishaysiliconix-dg444bdj-datasheets-7580.pdf | 16-DIP (0.300, 7.62mm) | 20.13mm | 7.62mm | 1μA | 16 | 36V | 13V | 80Ohm | 16 | no | unknown | 4 | e0 | 470mW | NOT SPECIFIED | 15V | DG444 | 16 | 1 | NOT SPECIFIED | 470mW | Multiplexer or Switches | Not Qualified | 300 ns | 200 ns | 22V | 15V | Dual, Single | 7V | -15V | 4 | SEPARATE OUTPUT | 80Ohm | 90 dB | BREAK-BEFORE-MAKE | NC | 12V ±15V | 1:1 | SPST - NC | 500pA | 5pF 5pF | 300ns, 200ns | 1pC | -95dB @ 100kHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TN2404K-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-tn2404kt1e3-datasheets-0731.pdf | TO-236-3, SC-59, SOT-23-3 | Lead Free | 3 | 14 Weeks | 1.437803g | Unknown | 3 | EAR99 | Tin | e3 | DUAL | GULL WING | 260 | 1 | Single | 30 | 360mW | 1 | FET General Purpose Powers | 5 ns | 12ns | 16 ns | 35 ns | 200mA | 20V | SILICON | SWITCHING | 800mV | 360mW Ta | 0.2A | 4Ohm | 240V | N-Channel | 800 mV | 4 Ω @ 300mA, 10V | 2V @ 250μA | 200mA Ta | 8nC @ 10V | 2.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG187AP/883 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~125°C TA | Tube | 1 (Unlimited) | Non-RoHS Compliant | 2009 | /files/vishaysiliconix-dg186ap883-datasheets-7590.pdf | 14-DIP (0.300, 7.62mm) | 14 | 30Ohm | 14 | no | 1 | e0 | Tin/Lead (Sn/Pb) | NO | DUAL | 2.54mm | 14 | Multiplexer or Switches | 1 | Not Qualified | 38535Q/M;38534H;883B | 18V | 10V | 30Ohm | BREAK-BEFORE-MAKE | 2:1 | SPDT | ±15V | 1nA | 9pF 6pF | 150ns, 130ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFD024PBF | Vishay Siliconix | $1.35 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfd024pbf-datasheets-1303.pdf | 60V | 2.5A | 4-DIP (0.300, 7.62mm) | 5mm | 3.37mm | 6.29mm | Lead Free | 8 Weeks | Unknown | 100mOhm | 4 | No | Single | 1.3W | 1 | 4-DIP, Hexdip, HVMDIP | 640pF | 13 ns | 58ns | 58 ns | 25 ns | 2.5A | 20V | 60V | 4V | 1.3W Ta | 180 ns | 100mOhm | 60V | N-Channel | 640pF @ 25V | 100mOhm @ 1.5A, 10V | 4V @ 250μA | 2.5A Ta | 25nC @ 10V | 100 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG201AAK | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~125°C TA | Tube | 1 (Unlimited) | 125°C | -55°C | Non-RoHS Compliant | 2009 | /files/vishaysiliconix-dg201aak-datasheets-7661.pdf | 16-CDIP (0.300, 7.62mm) | 19.56mm | 3.94mm | 7.62mm | 15V | 2mA | 36V | 13V | 175Ohm | 16 | 900mW | 4 | 900mW | 4 | 16-CERDIP | 600 ns | 450 ns | 22V | 15V | Dual | 7V | 4 | 4 | 175Ohm | 175mOhm | 1:1 | SPST - NC | ±15V | 1nA | 5pF 5pF | 600ns, 450ns | 20pC | -90dB @ 100kHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF840APBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irf840apbf-datasheets-2205.pdf | 500V | 8A | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 11 Weeks | 6.000006g | No SVHC | 850mOhm | 3 | Tin | No | 1 | Single | 125W | 1 | TO-220AB | 1.018nF | 11 ns | 23ns | 19 ns | 26 ns | 8A | 30V | 500V | 4V | 125W Tc | 850mOhm | 500V | N-Channel | 1018pF @ 25V | 4 V | 850mOhm @ 4.8A, 10V | 4V @ 250μA | 8A Tc | 38nC @ 10V | 850 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG211BDY | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Bulk | 1 (Unlimited) | CMOS | 30mA | Non-RoHS Compliant | /files/vishaysiliconix-dg212bdyt1-datasheets-7664.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | 10μA | 16 | 547.485991mg | 25V | 4.5V | 85Ohm | 16 | no | No | 4 | 30mA | e0 | Tin/Lead (Sn/Pb) | Inverting | 640mW | GULL WING | 1.27mm | 16 | 640mW | Multiplexer or Switches | 512/+-15V | 300 ns | 200 ns | 22V | Dual, Single | 4.5V | 100mA | 4 | 85Ohm | 85Ohm | BREAK-BEFORE-MAKE | NC | 4.5V~25V ±4.5V~22V | 1:1 | SPST - NC | 500pA | 5pF 5pF | 300ns, 200ns | 1pC | 2 Ω | -95dB @ 100kHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHB12N65E-GE3 | Vishay Siliconix | $2.42 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihb12n65ege3-datasheets-3509.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 18 Weeks | 1.437803g | Unknown | 3 | No | GULL WING | 1 | Single | 156W | 1 | R-PSSO-G2 | 16 ns | 19ns | 18 ns | 35 ns | 12A | 20V | SILICON | SWITCHING | 650V | 156W Tc | 28A | 226 mJ | 700V | N-Channel | 1224pF @ 100V | 380m Ω @ 6A, 10V | 4V @ 250μA | 12A Tc | 70nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG301ABA | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~125°C TA | Tube | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2009 | TO-100-10 Metal Can | 10 | 14 Weeks | 36V | 13V | 50Ohm | 10 | unknown | 1 | BOTTOM | WIRE | 15V | 10 | 1 | 450mW | 1 | Not Qualified | 22V | 7V | -15V | 2 | 50Ohm | 62 dB | 2:1 | SPDT | ±15V | 1nA | 14pF 14pF | 300ns, 250ns | 8pC | -74dB @ 500kHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFP360PBF | Vishay Siliconix | $1.05 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfp360pbf-datasheets-4363.pdf | 400V | 23A | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | Lead Free | 8 Weeks | 38.000013g | Unknown | 200mOhm | 3 | No | 1 | Single | 280W | 1 | TO-247-3 | 4.5nF | 18 ns | 79ns | 67 ns | 100 ns | 23A | 20V | 400V | 4V | 280W Tc | 630 ns | 200mOhm | 400V | N-Channel | 4500pF @ 25V | 4 V | 200mOhm @ 14A, 10V | 4V @ 250μA | 23A Tc | 210nC @ 10V | 200 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG309BDQ | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2008 | /files/vishaysiliconix-dg309bdqt1-datasheets-7732.pdf | 16-TSSOP (0.173, 4.40mm Width) | 16 | 44V | 4V | 85Ohm | 16 | no | 4 | e0 | Tin/Lead (Sn/Pb) | YES | DUAL | GULL WING | 15V | 0.635mm | 16 | Multiplexer or Switches | +-15V | 4 | Not Qualified | 22V | 4V | -15V | SEPARATE OUTPUT | 85Ohm | BREAK-BEFORE-MAKE | 200ns | NC | 4V~44V ±4V~22V | 1:1 | SPST - NC | 500pA | 5pF 5pF | 200ns, 150ns | 1pC | 1.7 Ω | -95dB @ 100kHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR410DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sir410dpt1ge3-datasheets-5016.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | Unknown | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 36W | 1 | FET General Purpose Powers | R-XDSO-C5 | 25 ns | 15ns | 15 ns | 30 ns | 35A | 20V | SILICON | DRAIN | SWITCHING | 1.2V | 4.2W Ta 36W Tc | 23A | 60A | 20V | N-Channel | 1600pF @ 10V | 4.8m Ω @ 20A, 10V | 2.5V @ 250μA | 35A Tc | 41nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG381BDJ | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | Non-RoHS Compliant | 2009 | /files/vishaysiliconix-dg390bdje3-datasheets-5350.pdf | 14-DIP (0.300, 7.62mm) | 15V | 1mA | 10 Weeks | 36V | 13V | 50Ohm | 14 | no | No | 230μA | 470mW | 14 | 2 | 150 ns | 130 ns | 22V | 15V | Dual, Single | 7V | 50Ohm | 1:1 | SPST - NC | ±15V | 5nA | 14pF 14pF | 150ns, 130ns (Typ) | 10pC | -74dB @ 500kHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7143DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -50°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/vishaysiliconix-si7143dpt1ge3-datasheets-6748.pdf | PowerPAK® SO-8 | Lead Free | 5 | 14 Weeks | 506.605978mg | Unknown | 10MOhm | 8 | yes | EAR99 | Tin | No | e3 | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 4.2W | 1 | Other Transistors | R-XDSO-C5 | 16.1A | 20V | SILICON | DRAIN | SWITCHING | 30V | 4.2W Ta 35.7W Tc | 35A | 60A | -30V | P-Channel | 2230pF @ 15V | -1.2 V | 10m Ω @ 16.1A, 10V | 2.8V @ 250μA | 35A Tc | 71nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG405AK | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~125°C TA | Tube | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2005 | /files/vishaysiliconix-dg401ak-datasheets-7781.pdf | 16-CDIP (0.300, 7.62mm) | 19.56mm | 3.94mm | 7.62mm | 15V | 1μA | 16 | 14 Weeks | 36V | 13V | 35Ohm | 16 | no | unknown | 2 | e0 | Tin/Lead (Sn/Pb) | 900mW | 16 | 900mW | Multiplexer or Switches | 2 | Not Qualified | 150 ns | 100 ns | 22V | 15V | Dual, Single | 7V | 4 | SEPARATE OUTPUT | 35Ohm | 35Ohm | BREAK-BEFORE-MAKE | NO | 2:1 | DPST - NO | ±15V | 250pA | 12pF 12pF | 150ns, 100ns | 60pC | -90dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4488DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si4488dyt1e3-datasheets-8822.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.5494mm | 3.9878mm | Lead Free | 8 | 14 Weeks | 506.605978mg | No SVHC | 50mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 8 | 1 | Single | 40 | 1.56W | 1 | FET General Purpose Powers | 12 ns | 7ns | 7 ns | 22 ns | 5A | 20V | SILICON | 2V | 1.56W Ta | 150V | N-Channel | 2 V | 50m Ω @ 5A, 10V | 2V @ 250μA (Min) | 3.5A Ta | 36nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG407BDJ | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2016 | /files/vishaysiliconix-dg406bdnt1e3-datasheets-9186.pdf | 28-DIP (0.600, 15.24mm) | 39.7mm | 3.31mm | 14.73mm | 15V | 500μA | 28 | 10 Weeks | 4.190003g | 36V | 7.5V | 60Ohm | 28 | no | unknown | 1 | e0 | TIN LEAD | NO | 625mW | NOT SPECIFIED | 15V | 28 | 8 | DIFFERENTIAL MULTIPLEXER | NOT SPECIFIED | Multiplexer or Switches | 2 | Not Qualified | 125 ns | 94 ns | 20V | 148 ns | Dual, Single | 5V | -15V | 60Ohm | 86 dB | 3Ohm | BREAK-BEFORE-MAKE | 12V ±5V~20V | 0.03A | 8:1 | 500pA | 6pF 54pF | 107ns, 88ns | 11pC | 3 Ω | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7115DN-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -50°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si7115dnt1ge3-datasheets-0397.pdf | PowerPAK® 1212-8 | 3.05mm | 1.04mm | 3.05mm | Lead Free | 5 | 14 Weeks | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 3.7W | 1 | Other Transistors | S-XDSO-C5 | 11 ns | 28ns | 35 ns | 52 ns | 2.3A | 20V | SILICON | DRAIN | SWITCHING | 150V | 52W Tc | 0.295Ohm | -150V | P-Channel | 1190pF @ 50V | 295m Ω @ 4A, 10V | 4V @ 250μA | 8.9A Tc | 42nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG387BDJ | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | Non-RoHS Compliant | 2005 | /files/vishaysiliconix-dg390bdje3-datasheets-5350.pdf | 14-DIP (0.300, 7.62mm) | 15V | 1mA | 8 Weeks | 36V | 13V | 50Ohm | 14 | no | unknown | 230μA | 470mW | 14 | 1 | 150 ns | 130 ns | 22V | 15V | Dual, Single | 7V | 50Ohm | 2:1 | SPDT | ±15V | 5nA | 14pF 14pF | 150ns, 130ns (Typ) | 10pC | -74dB @ 500kHz |
