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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Power Dissipation-Max (Abs) | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power - Max | Power Dissipation-Max | JEDEC-95 Code | Reverse Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation Ambient-Max | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SI7674DP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7674dpt1ge3-datasheets-6654.pdf | PowerPAK® SO-8 | Single | 5.4W | PowerPAK® SO-8 | 5.91nF | 210ns | 9 ns | 26 ns | 40A | 20V | 30V | 5.4W Ta 83W Tc | 3.3mOhm | 30V | N-Channel | 5910pF @ 15V | 3.3mOhm @ 20A, 10V | 3V @ 250μA | 40A Tc | 90nC @ 10V | 3.3 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQ4532AEY-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | /files/vishaysiliconix-sq4532aeyt1ge3-datasheets-7201.pdf | 8-SOIC (0.154, 3.90mm Width) | 1.75mm | 8 | 12 Weeks | EAR99 | unknown | YES | DUAL | GULL WING | NOT SPECIFIED | 2 | NOT SPECIFIED | 3.3W | 2 | 175°C | R-PDSO-G8 | 20V | SILICON | N-CHANNEL AND P-CHANNEL | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 7.3A | 0.031Ohm | 53 pF | N and P-Channel | 535pF @ 15V 528pF @ 15V | 31m Ω @ 4.9A, 10V, 70m Ω @ 3.5A, 10V | 2.5V @ 250μA | 7.3A Tc 5.3A Tc | 7.8nC @ 10V, 10.2nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1056X-T1-GE3 | Vishay Siliconix | $3.60 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si1056xt1e3-datasheets-7776.pdf | SOT-563, SOT-666 | 6 | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | FLAT | 260 | 6 | Single | 40 | 1 | FET General Purpose Power | 6.8 ns | 19ns | 19 ns | 18 ns | 1.32A | 8V | SILICON | SWITCHING | 236mW Ta | 0.089Ohm | 20V | N-Channel | 400pF @ 10V | 950 mV | 89m Ω @ 1.32A, 4.5V | 950mV @ 250μA | 8.7nC @ 5V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||
| SI4904DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si4904dyt1e3-datasheets-2203.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | 14 Weeks | 186.993455mg | No SVHC | 8 | No | 2W | SI4904 | 2 | Dual | 2W | 2 | 8-SO | 2.39nF | 88 ns | 117ns | 19 ns | 62 ns | 8A | 16V | 40V | 2V | 3.25W | 16mOhm | 40V | 2 N-Channel (Dual) | 2390pF @ 20V | 16mOhm @ 5A, 10V | 2V @ 250μA | 8A | 85nC @ 10V | Standard | 16 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||
| SI4102DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si4102dyt1e3-datasheets-6209.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 15 Weeks | 186.993455mg | Unknown | 8 | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 8 | 1 | Single | 30 | 4.8W | 1 | FET General Purpose Power | 10 ns | 10ns | 10 ns | 12 ns | 2.7A | 20V | SILICON | SWITCHING | 2V | 2.4W Ta 4.8W Tc | 0.0027A | 100V | N-Channel | 370pF @ 50V | 158m Ω @ 2.7A, 10V | 4V @ 250μA | 3.8A Tc | 11nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| SIS903DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® Gen III | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-sis903dnt1ge3-datasheets-0127.pdf | PowerPAK® 1212-8 Dual | 14 Weeks | PowerPAK® 1212-8 Dual | 20V | 2.6W Ta 23W Tc | 2 P-Channel (Dual) | 2565pF @ 10V | 20.1mOhm @ 5A, 4.5V | 1V @ 250μA | 6A Tc | 42nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI6443DQ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si6443dqt1e3-datasheets-7408.pdf | 8-TSSOP (0.173, 4.40mm Width) | 157.991892mg | 8 | 1 | Single | 1 | 8-TSSOP | 7.3A | 20V | 30V | 1.05W Ta | 12mOhm | -30V | P-Channel | 12mOhm @ 8.8A, 10V | 3V @ 250μA | 7.3A Ta | 60nC @ 5V | 12 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIZF916DT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-sizf916dtt1ge3-datasheets-0522.pdf | 8-PowerWDFN | 14 Weeks | 8-PowerPair® (6x5) | 30V | 3.4W Ta 26.6W Tc 4W Ta 60W Tc | 2 N-Channel (Dual) | 1060pF @ 15V 4320pF @ 15V | 4mOhm @ 10A, 10V, 1.25mOhm @ 10A, 10V | 2.4V @ 250μA, 2.2V @ 250μA | 23A Ta 40A Tc | 22nC @ 10V, 95nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIE832DF-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sie832dft1e3-datasheets-6384.pdf | 10-PolarPAK® (S) | 4 | 12 Weeks | 10 | yes | EAR99 | No | e3 | PURE MATTE TIN | DUAL | 260 | 10 | 1 | Single | 30 | 1 | FET General Purpose Power | R-PDSO-N4 | 45 ns | 260ns | 55 ns | 35 ns | 23.6A | 20V | SILICON | DRAIN | SWITCHING | 5.2W Ta 104W Tc | 80A | 0.0055Ohm | 40V | N-Channel | 3800pF @ 20V | 5.5m Ω @ 14A, 10V | 3V @ 250μA | 50A Tc | 77nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| SI1023X-T1-GE3 | Vishay Siliconix | $0.29 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishay-si1023xt1ge3-datasheets-0962.pdf | SOT-563, SOT-666 | 1.7mm | 600μm | 1.2mm | Lead Free | 6 | 14 Weeks | 8.193012mg | Unknown | 1.2Ohm | 3 | yes | EAR99 | LOW THRESHOLD | No | e3 | Matte Tin (Sn) | 250mW | FLAT | 260 | SI1023 | 6 | Dual | 40 | 250mW | 2 | Other Transistors | R-PDSO-F6 | -350mA | 6V | SILICON | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | -450mV | -20V | 2 P-Channel (Dual) | 1.2 Ω @ 350mA, 4.5V | 450mV @ 250μA (Min) | 370mA | 1.5nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||
| SIR412DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-sir412dpt1ge3-datasheets-2592.pdf | PowerPAK® SO-8 | 5 | 506.605978mg | 8 | EAR99 | No | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 3.9W | 1 | FET General Purpose Power | R-PDSO-C5 | 13 ns | 13ns | 10 ns | 13 ns | 20A | 20V | SILICON | DRAIN | SWITCHING | 3.9W Ta 15.6W Tc | 50A | 25V | N-Channel | 600pF @ 10V | 12m Ω @ 10A, 10V | 2.5V @ 250μA | 20A Tc | 16nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| SIZ322DT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2018 | /files/vishaysiliconix-siz322dtt1ge3-datasheets-4273.pdf | 8-PowerWDFN | 800μm | 14 Weeks | EAR99 | unknown | NOT SPECIFIED | 2 | NOT SPECIFIED | 3.7W | 150°C | 10 ns | 15 ns | 19A | 16.7W Tc | 25V | 2 N-Channel (Dual) | 950pF @ 12.5V | 6.35m Ω @ 15A, 10V | 2.4V @ 250μA | 30A Tc | 20.1nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIE844DF-T1-E3 | Vishay Siliconix | $7.91 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sie844dft1e3-datasheets-3152.pdf | 10-PolarPAK® (U) | 4 | No SVHC | 10 | yes | EAR99 | ULTRA-LOW RESISTANCE | No | e3 | PURE MATTE TIN | DUAL | 260 | 10 | Single | 30 | 5.2W | 1 | FET General Purpose Power | R-XDSO-N4 | 25 ns | 10ns | 10 ns | 25 ns | 44.5A | 20V | 30V | SILICON | DRAIN | SWITCHING | 3V | 5.2W Ta 25W Tc | 60A | 0.007Ohm | 31 mJ | 30V | N-Channel | 2150pF @ 15V | 3 V | 7m Ω @ 12.1A, 10V | 3V @ 250μA | 44.5A Tc | 44nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| SIZ340DT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | PowerPAIR®, TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-siz340dtt1ge3-datasheets-5238.pdf | 8-PowerWDFN | 3mm | 750μm | 3mm | 8 | 14 Weeks | Unknown | 8 | EAR99 | No | 31W | 2 | Dual | 2 | 13 ns | 55ns | 7 ns | 16 ns | 40A | 20V | SILICON | DRAIN SOURCE | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 2.4V | 16.7W 31W | 100A | 0.0095Ohm | 5 mJ | 2 N-Channel (Half Bridge) | 760pF @ 15V | 9.5m Ω @ 15.6A, 10V | 2.4V @ 250μA | 30A 40A | 19nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||
| SIE804DF-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sie804dft1ge3-datasheets-3195.pdf | 10-PolarPAK® (LH) | 10 | 5.2W | 1 | 10-PolarPAK® (LH) | 3nF | 37A | 20V | 150V | 5.2W Ta 125W Tc | 38mOhm | 150V | N-Channel | 3000pF @ 50V | 38mOhm @ 7.6A, 10V | 3V @ 250μA | 37A Tc | 105nC @ 10V | 38 mΩ | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIA537EDJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/vishaysiliconix-sia537edjt1ge3-datasheets-6486.pdf | PowerPAK® SC-70-6 Dual | 6 | 14 Weeks | 28.009329mg | Unknown | 6 | EAR99 | e3 | Matte Tin (Sn) - annealed | 7.8W | C BEND | NOT SPECIFIED | SIA537 | 2 | NOT SPECIFIED | 2 | 15 ns | 15ns | 10 ns | 30 ns | 4.5A | 8V | SILICON | DRAIN | SWITCHING | N-CHANNEL AND P-CHANNEL | 12V 20V | METAL-OXIDE SEMICONDUCTOR | 1V | -20V | N and P-Channel | 455pF @ 6V | 28m Ω @ 5.2A, 4.5V | 1V @ 250μA | 16nC @ 8V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||
| SIE860DF-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sie860dft1ge3-datasheets-2541.pdf | 10-PolarPAK® (M) | 4 | 10 | yes | EAR99 | No | e3 | PURE MATTE TIN | DUAL | 260 | 10 | Single | 30 | 5.2W | 1 | FET General Purpose Power | R-XDSO-N4 | 35 ns | 20ns | 30 ns | 50 ns | 38A | 20V | SILICON | DRAIN | SWITCHING | 5.2W Ta 104W Tc | 60A | 80A | 0.0021Ohm | 125 mJ | 30V | N-Channel | 4500pF @ 15V | 2.1m Ω @ 21.7A, 10V | 2.5V @ 250μA | 60A Tc | 105nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| SI1553CDL-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si1553cdlt1ge3-datasheets-8652.pdf | 6-TSSOP, SC-88, SOT-363 | 6 | 14 Weeks | EAR99 | unknown | e3 | Matte Tin (Sn) | YES | DUAL | GULL WING | 6 | 2 | Not Qualified | R-PDSO-G6 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL AND P-CHANNEL | 0.34W | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 340mW | 0.7A | 0.39Ohm | N and P-Channel | 38pF @ 10V | 0.29W | 390m Ω @ 700mA, 4.5V | 1.5V @ 250μA | 700mA 500mA | 1.8nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUM75N15-18P-E3 | Vishay Siliconix | $0.37 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sum75n1518pe3-datasheets-3284.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | No SVHC | 18mOhm | 3 | yes | EAR99 | No | e4 | Silver (Ag) | GULL WING | 260 | 4 | Single | 30 | 3.12W | 1 | FET General Purpose Power | R-PSSO-G2 | 15 ns | 10ns | 8 ns | 25 ns | 75A | 20V | 150V | SILICON | SWITCHING | 4.5V | 3.12W Ta 312.5W Tc | 150V | N-Channel | 4180pF @ 75V | 4.5 V | 18m Ω @ 20A, 10V | 4.5V @ 250μA | 75A Tc | 100nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| SUM110N10-09-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Cut Tape (CT) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-sum110n1009e3-datasheets-9656.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.41mm | 4.83mm | 9.65mm | Lead Free | 2 | 14 Weeks | 1.437803g | Unknown | 9.5MOhm | 3 | yes | EAR99 | No | e3 | MATTE TIN OVER NICKEL | GULL WING | 260 | 4 | 1 | Single | 30 | 3.75W | 1 | FET General Purpose Power | R-PSSO-G2 | 20 ns | 125ns | 130 ns | 55 ns | 110A | 20V | 100V | SILICON | DRAIN | SWITCHING | 4V | 3.75W Ta 375W Tc | 70 ns | 440A | 100V | N-Channel | 6700pF @ 25V | 4 V | 9.5m Ω @ 30A, 10V | 4V @ 250μA | 110A Tc | 160nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| SUP85N04-03-E3 | Vishay Siliconix | $0.37 |
Min: 1 Mult: 1 |
download | TrenchFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sup85n0403e3-datasheets-3341.pdf | TO-220-3 | 3 | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 3 | Single | 250W | 1 | FET General Purpose Power | 15 ns | 90ns | 125 ns | 95 ns | 85A | 20V | SILICON | DRAIN | 3.75W Ta 250W Tc | TO-220AB | 240A | 40V | N-Channel | 6860pF @ 25V | 3.5m Ω @ 30A, 10V | 3V @ 250μA | 85A Tc | 250nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4340CDY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si4340cdyt1e3-datasheets-4887.pdf | 14-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | 186.993455mg | 14 | 5.4W | SI4340 | 2 | 14-SOIC | 1.3nF | 22 ns | 10ns | 10 ns | 32 ns | 11.5A | 16V | 20V | 3W 5.4W | 9.4mOhm | 2 N-Channel (Dual) | 1300pF @ 10V | 9.4mOhm @ 11.5A, 10V | 3V @ 250μA | 14.1A 20A | 32nC @ 10V | Logic Level Gate | 9.4 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR168DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount, Through Hole | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/vishaysiliconix-sir168dpt1ge3-datasheets-3601.pdf | PowerPAK® SO-8 | 5 | 506.605978mg | Unknown | 8 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 1 | FET General Purpose Power | R-PDSO-C5 | 23 ns | 70ns | 15 ns | 33 ns | 40A | 20V | SILICON | DRAIN | SWITCHING | 2.4V | 5W Ta 34.7W Tc | 0.0044Ohm | 30V | N-Channel | 2040pF @ 15V | 2.4 V | 4.4m Ω @ 15A, 10V | 2.4V @ 250μA | 40A Tc | 75nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| SQJ974EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-sqj974ept1ge3-datasheets-6081.pdf | PowerPAK® SO-8 Dual | 12 Weeks | PowerPAK® SO-8 Dual | 100V | 48W | 2 N-Channel (Dual) | 1050pF @ 25V | 25.5mOhm @ 10A, 10V | 2.5V @ 250μA | 30A Tc | 30nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUP85N03-3M6P-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/vishaysiliconix-sup85n033m6pge3-datasheets-8506.pdf | TO-220-3 | 3 | 6.000006g | No SVHC | 3 | EAR99 | unknown | e3 | Matte Tin (Sn) | 260 | 3 | 1 | Single | 30 | 3.1W | 1 | FET General Purpose Power | Not Qualified | 11 ns | 10ns | 10 ns | 35 ns | 85A | 20V | SILICON | DRAIN | SWITCHING | 1V | 3.1W Ta 78.1W Tc | TO-220AB | 30V | N-Channel | 3535pF @ 15V | 3.6m Ω @ 22A, 10V | 2.5V @ 250μA | 85A Tc | 100nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| SI2307BDS-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/vishaysiliconix-si2307bdst1e3-datasheets-7112.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.02mm | 1.4mm | Lead Free | 3 | 14 Weeks | 1.437803g | Unknown | 78mOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 750mW | 1 | Other Transistors | 9 ns | 12ns | 12 ns | 25 ns | -2.5A | 20V | SILICON | 30V | -3V | 750mW Ta | -30V | P-Channel | 380pF @ 15V | -3 V | 78m Ω @ 3.2A, 10V | 3V @ 250μA | 2.5A Ta | 15nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| SUD50P04-15-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-sud50p0415e3-datasheets-3027.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 2 | 26 Weeks | 1.437803g | No SVHC | 15mOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | GULL WING | 4 | 1 | Single | 100W | 1 | Other Transistors | R-PSSO-G2 | 15 ns | 380ns | 140 ns | 75 ns | -50A | 20V | SILICON | DRAIN | 40V | -1V | 3W Ta 100W Tc | -40V | P-Channel | 5400pF @ 25V | -1 V | 15m Ω @ 30A, 10V | 1V @ 250μA (Min) | 50A Tc | 130nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| SI3493BDV-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/vishaysiliconix-si3493bdvt1e3-datasheets-9093.pdf | SOT-23-6 Thin, TSOT-23-6 | 3.05mm | 1mm | 1.65mm | Lead Free | 6 | 14 Weeks | 19.986414mg | Unknown | 27.5mOhm | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 6 | 1 | Single | 40 | 2.08W | 1 | Other Transistors | 22 ns | 72ns | 84 ns | 75 ns | -8A | 8V | SILICON | SWITCHING | 20V | -400mV | 2.08W Ta 2.97W Tc | 8A | 25A | -20V | P-Channel | 1805pF @ 10V | -900 mV | 27.5m Ω @ 7A, 4.5V | 900mV @ 250μA | 8A Tc | 43.5nC @ 5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||
| SI7860DP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si7860dpt1ge3-datasheets-3692.pdf | PowerPAK® SO-8 | 5.969mm | 1.0668mm | 5.0038mm | Lead Free | 5 | No SVHC | 8mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | Single | 40 | 1.8W | 1 | FET General Purpose Power | R-XDSO-C5 | 3.45nF | 18 ns | 12ns | 12 ns | 46 ns | 18A | 20V | 30V | SILICON | DRAIN | SWITCHING | 3V | 1.8W Ta | 50A | 45 mJ | 30V | N-Channel | 3 V | 8m Ω @ 18A, 10V | 3V @ 250μA | 11A Ta | 18nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| SI4423DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si4423dyt1e3-datasheets-0791.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.5494mm | 3.9878mm | Lead Free | 8 | 14 Weeks | 506.605978mg | No SVHC | 7.5mOhm | 8 | EAR99 | No | e3 | MATTE TIN | DUAL | GULL WING | 260 | 8 | 1 | Single | 40 | 1.5W | 1 | 75 ns | 165ns | 165 ns | 460 ns | -14A | 8V | SILICON | SWITCHING | -400mV | 1.5W Ta | 20V | P-Channel | -400 mV | 7.5m Ω @ 14A, 4.5V | 900mV @ 600μA | 10A Ta | 175nC @ 5V | 1.8V 4.5V | ±8V |
