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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Manufacturer Package Identifier | Reach Compliance Code | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power - Max | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SI5461EDC-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si5461edct1e3-datasheets-6485.pdf | 8-SMD, Flat Lead | 8 | 8 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | Single | 40 | 1.3W | 1 | Other Transistors | 2.5 μs | 4.5μs | 15 μs | 27 μs | 4.5A | 12V | SILICON | 1.3W Ta | 0.045Ohm | 20V | P-Channel | 45m Ω @ 5A, 4.5V | 450mV @ 250μA (Min) | 4.5A Ta | 20nC @ 4.5V | 1.8V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4288DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si4288dyt1ge3-datasheets-5505.pdf | 8-SOIC (0.154, 3.90mm Width) | 1.75mm | Lead Free | 8 | 14 Weeks | 506.605978mg | No SVHC | 8 | EAR99 | No | e3 | MATTE TIN | 3.1W | GULL WING | 260 | 8 | Dual | 30 | 2W | 2 | 150°C | 7 ns | 8 ns | 16 ns | 7.4A | 20V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 1.2V | 40V | 2 N-Channel (Dual) | 580pF @ 20V | 20m Ω @ 10A, 10V | 2.5V @ 250μA | 9.2A | 15nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||
| SI7452DP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7452dpt1ge3-datasheets-6619.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | 8 | 506.605978mg | 8 | EAR99 | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 1.9W | 1 | Not Qualified | 45 ns | 15ns | 15 ns | 90 ns | 11.5A | 20V | SILICON | DRAIN | SWITCHING | 1.9W Ta | 60V | N-Channel | 8.3m Ω @ 19.3A, 10V | 4.5V @ 250μA | 11.5A Ta | 160nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| SI5515CDC-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si5515cdct1e3-datasheets-6614.pdf | 8-SMD, Flat Lead | 3.05mm | 1.1mm | 1.65mm | 8 | 14 Weeks | 84.99187mg | No SVHC | 8 | EAR99 | Tin | No | e3 | 3.1W | DUAL | C BEND | 260 | SI5515 | 8 | 2 | 30 | 1.3W | 2 | 10 ns | 32ns | 6 ns | 25 ns | 4A | 8V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 800mV | 4A | 0.036Ohm | 20V | N and P-Channel | 632pF @ 10V | 800 mV | 36m Ω @ 6A, 4.5V | 800mV @ 250μA | 4A Tc | 11.3nC @ 5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||
| SI7601DN-T1-E3 | Vishay Siliconix | $0.15 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -50°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -50°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7601dnt1ge3-datasheets-0272.pdf | PowerPAK® 1212-8 | 3.05mm | 1.04mm | 3.05mm | 8 | 1 | Single | 3.8W | 1 | PowerPAK® 1212-8 | 1.87nF | 18 ns | 112ns | 80 ns | 53 ns | 11.5A | 12V | 20V | 3.8W Ta 52W Tc | 19mOhm | P-Channel | 1870pF @ 10V | 19.2mOhm @ 11A, 4.5V | 1.6V @ 250μA | 16A Tc | 27nC @ 5V | 19.2 mΩ | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7904BDN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si7904bdnt1ge3-datasheets-7920.pdf | PowerPAK® 1212-8 Dual | 3.05mm | 1.04mm | 3.05mm | Lead Free | 6 | 14 Weeks | Unknown | 30MOhm | 8 | yes | EAR99 | Tin | No | e3 | 2.5W | C BEND | 260 | SI7904 | 8 | 2 | Dual | 40 | 2.5W | 2 | FET General Purpose Powers | S-XDSO-C6 | 5 ns | 15ns | 5 ns | 25 ns | 6A | 8V | SILICON | DRAIN | AMPLIFIER | 20V | METAL-OXIDE SEMICONDUCTOR | 1V | 17.8W | 6A | 20V | 2 N-Channel (Dual) | 860pF @ 10V | 30m Ω @ 7.1A, 4.5V | 1V @ 250μA | 24nC @ 8V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||
| SI1422DH-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si1422dht1ge3-datasheets-2026.pdf | 6-TSSOP, SC-88, SOT-363 | Lead Free | 6 | 7.512624mg | Unknown | 26mOhm | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 6 | 1 | Single | 30 | 1.56W | 1 | FET General Purpose Power | 10 ns | 10ns | 10 ns | 20 ns | 4A | 8V | SILICON | SWITCHING | 1.56W Ta 2.8W Tc | 4A | 12V | N-Channel | 725pF @ 6V | 400 mV | 26m Ω @ 5.1A, 4.5V | 1V @ 250μA | 4A Tc | 20nC @ 8V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||
| SIA907EDJT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sia907edjtt1ge3-datasheets-9247.pdf | PowerPAK® SC-70-6 Dual | Contains Lead | 6 | 28.009329mg | 57mOhm | 6 | EAR99 | No | 7.8W | 6 | Dual | 1.9W | 2 | Other Transistors | 5 ns | 10ns | 10 ns | 30 ns | 4.5A | 12V | SILICON | DRAIN | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | -20V | 2 P-Channel (Dual) | 57m Ω @ 3.6A, 4.5V | 1.4V @ 250μA | 4.5A Tc | 23nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4409DY-T1-GE3 | Vishay Siliconix | $0.33 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4409dyt1e3-datasheets-6284.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 8 | EAR99 | No | e3 | PURE MATTE TIN | DUAL | GULL WING | 260 | 8 | Single | 30 | 2.2W | 1 | 7 ns | 10ns | 10 ns | 13 ns | 900mA | 20V | SILICON | SWITCHING | 2.2W Ta 4.6W Tc | 150V | P-Channel | 332pF @ 50V | 1.2 Ω @ 500mA, 10V | 4V @ 250μA | 1.3A Tc | 12nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| SIZ980DT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | Non-RoHS Compliant | /files/vishaysiliconix-siz980dtt1ge3-datasheets-0423.pdf | 8-PowerWDFN | 6 | 14 Weeks | EAR99 | unknown | YES | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 2 | R-PDSO-N6 | SILICON | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN SOURCE | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 20W 66W | 20A | 90A | 0.0067Ohm | 11.2 mJ | 2 N-Channel (Dual), Schottky | 930pF @ 15V 4600pF @ 15V | 6.7m Ω @ 15A, 10V, 1.6m Ω @ 19A, 10V | 2.2V @ 250μA | 20A Tc 60A Tc | 8.1nC @ 4.5V, 35nC @ 4.5V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI5440DC-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si5440dct1ge3-datasheets-2288.pdf | 8-SMD, Flat Lead | 3.05mm | 1.1mm | 1.65mm | 8 | 15 Weeks | 84.99187mg | 8 | No | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | 40 | 2.5W | 2 | 20 ns | 12ns | 10 ns | 20 ns | 6A | 20V | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 2.5W Ta 6.3W Tc | 30V | N-Channel | 1200pF @ 10V | 19m Ω @ 9.1A, 10V | 2.5V @ 250μA | 6A Tc | 29nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| SI1016X-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si1016xt1ge3-datasheets-1326.pdf | SOT-563, SOT-666 | 1.7mm | 600μm | 1.2mm | Lead Free | 6 | 14 Weeks | 32.006612mg | 700mOhm | 6 | yes | EAR99 | LOW THRESHOLD | No | e3 | Matte Tin (Sn) | 250mW | DUAL | FLAT | 260 | SI1016 | 6 | 40 | 250mW | 2 | Other Transistors | 485mA | 6V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 0.485A | 20V | N and P-Channel | 700m Ω @ 600mA, 4.5V | 1V @ 250μA | 485mA 370mA | 0.75nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||
| SI6467BDQ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si6467bdqt1e3-datasheets-6035.pdf | 8-TSSOP (0.173, 4.40mm Width) | Lead Free | 8 | 8 | yes | EAR99 | No | e3 | MATTE TIN | 1.05W | DUAL | GULL WING | 260 | 8 | Single | 40 | 1.05W | 1 | Other Transistors | 45 ns | 85ns | 85 ns | 220 ns | -8A | 8V | 12V | P-Channel | 12.5m Ω @ 8A, 4.5V | 850mV @ 450μA | 6.8A Ta | 70nC @ 4.5V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI6954ADQ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si6954adqt1e3-datasheets-6320.pdf | 8-TSSOP (0.173, 4.40mm Width) | 3mm | 1mm | 4.4mm | Lead Free | 14 Weeks | 157.991892mg | Unknown | 8 | No | 830mW | SI6954 | 2 | Dual | 830mW | 2 | 8-TSSOP | 12 ns | 10ns | 10 ns | 23 ns | 3.4A | 20V | 30V | 1V | 830mW | 53mOhm | 2 N-Channel (Dual) | 53mOhm @ 3.4A, 10V | 1V @ 250μA (Min) | 3.1A | 16nC @ 10V | Logic Level Gate | 53 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1473DH-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si1473dht1e3-datasheets-8072.pdf | 6-TSSOP, SC-88, SOT-363 | Lead Free | 6 | 7.512624mg | Unknown | 100MOhm | 6 | yes | EAR99 | No | e3 | PURE MATTE TIN | DUAL | GULL WING | 260 | 6 | 1 | Single | 30 | 1.5W | 1 | Other Transistors | 2.8A | 20V | SILICON | SWITCHING | 30V | 1.5W Ta 2.78W Tc | 2.7A | 8A | -30V | P-Channel | 365pF @ 15V | -1 V | 100m Ω @ 2A, 10V | 3V @ 250μA | 2.7A Tc | 6.2nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| SQ3987EV-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2018 | /files/vishaysiliconix-sq3987evt1ge3-datasheets-4406.pdf | SOT-23-6 Thin, TSOT-23-6 | 6 | 12 Weeks | unknown | YES | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 2 | R-PDSO-G6 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 1.67W | 3A | 0.185Ohm | 74 pF | 2 P-Channel (Dual) | 570pF @ 15V | 133m Ω @ 1.5A, 10V | 2.5V @ 250μA | 3A Tc | 12.2nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIE836DF-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sie836dft1ge3-datasheets-2516.pdf | 10-PolarPAK® (SH) | 4 | 10 | yes | EAR99 | No | e3 | PURE MATTE TIN | DUAL | 260 | 10 | Single | 30 | 5.2W | 1 | FET General Purpose Power | R-PDSO-N4 | 15 ns | 10ns | 10 ns | 20 ns | 4.1A | 30V | SILICON | DRAIN SOURCE | SWITCHING | 5.2W Ta 104W Tc | 18.3A | 15A | 0.13Ohm | 1.25 mJ | 200V | N-Channel | 1200pF @ 100V | 130m Ω @ 4.1A, 10V | 4.5V @ 250μA | 18.3A Tc | 41nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||
| SQJ912AEP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/vishaysiliconix-sqj912aept1ge3-datasheets-5421.pdf | PowerPAK® SO-8 Dual | 4 | 12 Weeks | EAR99 | unknown | 48W | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 2 | R-PSSO-G4 | 30A | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN | 40V | 40V | METAL-OXIDE SEMICONDUCTOR | 48W | 120A | 0.0093Ohm | 34 mJ | 2 N-Channel (Dual) | 1835pF @ 20V | 9.3m Ω @ 9.7A, 10V | 2.5V @ 250μA | 38nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUD40N02-08-E3 | Vishay Siliconix | $0.92 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sud40n0208e3-datasheets-3216.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.7056mm | 2.3876mm | 6.223mm | 2 | No SVHC | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 4 | Single | 71W | 1 | FET General Purpose Power | R-PSSO-G2 | 20 ns | 120ns | 20 ns | 45 ns | 40A | 12V | 20V | SILICON | DRAIN | 600mV | 8.3W Ta 71W Tc | 0.0085Ohm | 20V | N-Channel | 2660pF @ 20V | 600 mV | 8.5m Ω @ 20A, 4.5V | 600mV @ 250μA (Min) | 40A Tc | 35nC @ 4.5V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||
| SI7938DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si7938dpt1ge3-datasheets-6952.pdf | PowerPAK® SO-8 Dual | 1.17mm | Lead Free | 6 | 14 Weeks | 506.605978mg | No SVHC | 8 | yes | EAR99 | S17-0173-DUAL | unknown | e3 | Matte Tin (Sn) | 46W | C BEND | 260 | SI7938 | 8 | 2 | Dual | 40 | 3.5W | 2 | FET General Purpose Power | Not Qualified | 150°C | R-XDSO-C6 | 11 ns | 19ns | 15 ns | 33 ns | 60A | 20V | SILICON | DRAIN | SWITCHING | 40V | METAL-OXIDE SEMICONDUCTOR | 2.5V | 40V | 2 N-Channel (Dual) | 2300pF @ 20V | 2.5 V | 5.8m Ω @ 18.5A, 10V | 2.5V @ 250μA | 65nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||
| SUD50N04-16P-E3 | Vishay Siliconix | $0.44 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sud50n0416pe3-datasheets-3262.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | 2 | 1.437803g | EAR99 | e3 | MATTE TIN OVER NICKEL | GULL WING | NOT SPECIFIED | 4 | 1 | Single | NOT SPECIFIED | 3.1W | 1 | Not Qualified | R-PSSO-G2 | 19 ns | 120ns | 36 ns | 40 ns | 9.8A | 16V | SILICON | DRAIN | SWITCHING | 3.1W Ta 35.7W Tc | 50A | 20 mJ | 40V | N-Channel | 1655pF @ 20V | 16m Ω @ 15A, 10V | 2.2V @ 250μA | 9.8A Ta 20A Tc | 60nC @ 10V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||
| IRL540PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irl540pbf-datasheets-9841.pdf | TO-220-3 | 10.54mm | 8.76mm | 4.7mm | Lead Free | 3 | 8 Weeks | 6.000006g | Unknown | 77mOhm | 3 | yes | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | No | e3 | MATTE TIN | 3 | 1 | Single | 150W | 1 | 8.5 ns | 170ns | 80 ns | 35 ns | 28A | 10V | SILICON | SWITCHING | 100V | 2V | 150W Tc | TO-220AB | 260 ns | 440 mJ | N-Channel | 2200pF @ 25V | 2 V | 77m Ω @ 17A, 5V | 2V @ 250μA | 28A Tc | 64nC @ 5V | 4V 5V | ±10V | |||||||||||||||||||||||||||||||||||||||||
| SUD50N025-06P-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sud50n02506pe3-datasheets-3306.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | 1.437803g | 1 | Single | TO-252, (D-Pak) | 2.49nF | 9 ns | 11ns | 8 ns | 24 ns | 78A | 20V | 25V | 10.7W Ta 65W Tc | 6.2mOhm | N-Channel | 2490pF @ 12V | 6.2mOhm @ 20A, 10V | 2.4V @ 250μA | 78A Tc | 66nC @ 10V | 6.2 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJB40EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-sqjb40ept1ge3-datasheets-4689.pdf | PowerPAK® SO-8 Dual | 14 Weeks | PowerPAK® SO-8 Dual | 40V | 34W | 2 N-Channel (Dual) | 1900pF @ 25V | 8mOhm @ 8A, 10V | 2.5V @ 250μA | 30A Tc | 35nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUP85N02-03-E3 | Vishay Siliconix | $5.58 |
Min: 1 Mult: 1 |
download | TrenchFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sup85n0203e3-datasheets-3385.pdf | TO-220-3 | 3 | Unknown | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 3 | Single | 250W | 1 | FET General Purpose Power | 20 ns | 200ns | 320 ns | 450 ns | 85A | 8V | SILICON | DRAIN | 450mV | 250W Tc | TO-220AB | 240A | 20V | N-Channel | 21250pF @ 20V | 450 mV | 3m Ω @ 30A, 4.5V | 450mV @ 2mA (Min) | 85A Tc | 200nC @ 4.5V | 2.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||
| SQ4946AEY-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-sq4946aeyt1ge3-datasheets-4914.pdf | 8-SOIC (0.154, 3.90mm Width) | 12 Weeks | 8-SO | 60V | 4W | 33mOhm | 2 N-Channel (Dual) | 750pF @ 25V | 40mOhm @ 4.5A, 10V | 2.5V @ 250μA | 7A | 18nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUP85N03-04P-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sup85n0304pe3-datasheets-4002.pdf | TO-220-3 | 10.4902mm | 15.494mm | 4.6482mm | Lead Free | 4.3mOhm | 3 | No | Single | 166W | 1 | TO-220AB | 4.5nF | 15 ns | 12ns | 22 ns | 50 ns | 85A | 20V | 30V | 3.75W Ta 166W Tc | 4.3mOhm | 30V | N-Channel | 4500pF @ 25V | 4.3mOhm @ 30A, 10V | 3V @ 250μA | 85A Tc | 90nC @ 10V | 4.3 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI6913DQ-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si6913dqt1ge3-datasheets-3011.pdf | 8-TSSOP (0.173, 4.40mm Width) | 3mm | 1mm | 4.4mm | Lead Free | 8 | 14 Weeks | 157.991892mg | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 830mW | GULL WING | 260 | SI6913 | 8 | Dual | 40 | 830mW | 2 | Other Transistors | 45 ns | 80ns | 80 ns | 130 ns | 4.9A | 8V | SILICON | SWITCHING | 12V | METAL-OXIDE SEMICONDUCTOR | 2 P-Channel (Dual) | 21m Ω @ 5.8A, 4.5V | 900mV @ 400μA | 28nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||
| SUD35N05-26L-E3 | Vishay Siliconix | $0.14 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sud35n0526le3-datasheets-2955.pdf | 55V | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.7056mm | 2.3876mm | 6.223mm | Lead Free | No SVHC | 20mOhm | 3 | No | Single | 50W | 1 | TO-252, (D-Pak) | 885pF | 5 ns | 18ns | 100 ns | 20 ns | 35A | 20V | 55V | 55V | 1V | 7.5W Ta 50W Tc | 20mOhm | 55V | N-Channel | 885pF @ 25V | 1 V | 20mOhm @ 20A, 10V | 1V @ 250μA (Min) | 35A Tc | 13nC @ 5V | 20 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| SI2333DS-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/vishaysiliconix-si2333dst1e3-datasheets-8489.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.12mm | 1.4mm | Lead Free | 3 | 14 Weeks | 1.437803g | Unknown | 32mOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 750mW | 1 | Other Transistors | 150°C | 25 ns | 45ns | 45 ns | 72 ns | -4.1A | 8V | SILICON | SWITCHING | 12V | -1V | 750mW Ta | -12V | P-Channel | 1100pF @ 6V | -1 V | 32m Ω @ 5.3A, 4.5V | 1V @ 250μA | 4.1A Ta | 18nC @ 4.5V | 1.8V 4.5V | ±8V |
