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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IPP65R095C7XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ C7 | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipp65r095c7xksa1-datasheets-1994.pdf | TO-220-3 | Lead Free | 3 | 18 Weeks | 3 | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | 14 ns | 12ns | 7 ns | 60 ns | 24A | 20V | 650V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 128W Tc | TO-220AB | 100A | 0.095Ohm | 118 mJ | N-Channel | 2140pF @ 400V | 95m Ω @ 11.8A, 10V | 4V @ 590μA | 24A Tc | 45nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| STP15N95K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH5™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stf15n95k5-datasheets-1914.pdf | TO-220-3 | 10.4mm | 15.75mm | 4.6mm | Lead Free | 17 Weeks | 3 | EAR99 | No | STP15N | Single | 20 ns | 62 ns | 12A | 30V | 950V | 170W Tc | N-Channel | 900pF @ 100V | 500m Ω @ 6A, 10V | 5V @ 100μA | 12A Tc | 40nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| STP21N65M5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ V | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stp21n65m5-datasheets-2003.pdf | TO-220-3 | 10.4mm | 15.75mm | 4.6mm | 3 | 17 Weeks | No SVHC | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | e3 | Matte Tin (Sn) | STP21N | 3 | Single | 125W | 1 | FET General Purpose Power | 17A | 25V | SILICON | SWITCHING | 4V | 125W Tc | TO-220AB | 68A | 400 mJ | 650V | N-Channel | 1950pF @ 100V | 190m Ω @ 8.5A, 10V | 5V @ 250μA | 17A Tc | 50nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||
| STP25N80K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH5™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stp25n80k5-datasheets-2009.pdf | TO-220-3 | 10.4mm | 15.75mm | 4.6mm | Lead Free | 3 | 17 Weeks | 190mOhm | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | No | e3 | Tin (Sn) | STP25N | Single | 1 | FET General Purpose Power | 25 ns | 60 ns | 19.5A | 30V | SILICON | DRAIN | SWITCHING | 250W Tc | TO-220AB | 78A | 200 mJ | 800V | N-Channel | 1600pF @ 100V | 260m Ω @ 19.5A, 10V | 5V @ 100μA | 19.5A Tc | 40nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| R6035KNZ1C9 | ROHM Semiconductor | $15.32 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | TO-247-3 | 3 | 17 Weeks | EAR99 | not_compliant | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 600V | 600V | 379W Tc | 35A | 105A | 0.102Ohm | 796 mJ | N-Channel | 3000pF @ 25V | 102m Ω @ 18.1A, 10V | 5V @ 1mA | 35A Tc | 72nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| STP23NM50N | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stw23nm50n-datasheets-1950.pdf | TO-220-3 | 10.4mm | 15.75mm | 4.6mm | Lead Free | 3 | 16 Weeks | No SVHC | 190mOhm | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | No | e3 | Matte Tin (Sn) | STP23N | 3 | Single | 125W | 1 | FET General Purpose Power | 6.6 ns | 19ns | 29 ns | 71 ns | 17A | 25V | SILICON | SWITCHING | 3V | 125W Tc | TO-220AB | 68A | 254 mJ | 500V | N-Channel | 1330pF @ 50V | 3 V | 190m Ω @ 8.5A, 10V | 4V @ 250μA | 17A Tc | 45nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||
| STW7N95K3 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stw7n95k3-datasheets-2031.pdf | TO-247-3 | 15.75mm | 20.15mm | 5.15mm | Lead Free | 3 | 12 Weeks | No SVHC | 1.35Ohm | 3 | EAR99 | No | e3 | Matte Tin (Sn) | STW7N | 3 | Single | 150W | 1 | FET General Purpose Power | 14 ns | 9ns | 23 ns | 36 ns | 7.2A | 30V | SILICON | SWITCHING | 150W Tc | TO-247AC | 28.8A | 220 mJ | 950V | N-Channel | 1031pF @ 100V | 1.35 Ω @ 3.6A, 10V | 5V @ 100μA | 7.2A Tc | 34nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| SIHP25N60EFL-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | E | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | /files/vishaysiliconix-sihp25n60eflge3-datasheets-2035.pdf | TO-220-3 | 19.31mm | 21 Weeks | 1 | 250W | 150°C | 25 ns | 47 ns | 25A | 30V | 250W Tc | 600V | N-Channel | 2274pF @ 100V | 146m Ω @ 12.5A, 10V | 5V @ 250μA | 25A Tc | 75nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPI075N15N3GXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipi075n15n3gxksa1-datasheets-2038.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | Lead Free | 3 | 18 Weeks | 2.387001g | No SVHC | 3 | yes | EAR99 | No | e3 | Tin (Sn) | Halogen Free | 3 | Single | 300W | 1 | FET General Purpose Power | 25 ns | 35ns | 14 ns | 46 ns | 100A | 20V | 150V | SILICON | SWITCHING | 3V | 300W Tc | 400A | 0.0075Ohm | 780 mJ | 150V | N-Channel | 5470pF @ 75V | 7.5m Ω @ 100A, 10V | 4V @ 270μA | 100A Tc | 93nC @ 10V | 8V 10V | ±20V | |||||||||||||||||||||||||||||||||
| SIHP17N80E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | E | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | /files/vishaysiliconix-sihp17n80ege3-datasheets-2044.pdf | TO-220-3 | 14 Weeks | 800V | 208W Tc | N-Channel | 2408pF @ 100V | 290m Ω @ 8.5A, 10V | 4V @ 250μA | 15A Tc | 122nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STF23NM50N | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stw23nm50n-datasheets-1950.pdf | TO-220-3 Full Pack | 10.4mm | 16.4mm | 4.6mm | Lead Free | 3 | 16 Weeks | No SVHC | 190MOhm | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | No | e3 | Matte Tin (Sn) - annealed | STF23 | 3 | Single | 30W | 1 | FET General Purpose Power | 6.6 ns | 19ns | 29 ns | 71 ns | 17A | 25V | SILICON | ISOLATED | SWITCHING | 3V | 30W Tc | TO-220AB | 68A | 254 mJ | 500V | N-Channel | 1330pF @ 50V | 190m Ω @ 8.5A, 10V | 4V @ 250μA | 17A Tc | 45nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||
| SIHG25N60EFL-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | E | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihg25n60eflge3-datasheets-1972.pdf | TO-247-3 | 21 Weeks | 600V | 250W Tc | N-Channel | 2274pF @ 100V | 146m Ω @ 12.5A, 10V | 5V @ 250μA | 25A Tc | 75nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHP30N60E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | E | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sihp30n60ee3-datasheets-9594.pdf | TO-220-3 | 10.51mm | 15.49mm | 4.65mm | Lead Free | 14 Weeks | 6.000006g | Unknown | 125mOhm | 3 | Tin | No | 1 | Single | 250W | 1 | 2.6nF | 19 ns | 32ns | 36 ns | 63 ns | 29A | 20V | 600V | 2V | 250W Tc | 125mOhm | N-Channel | 2600pF @ 100V | 125mOhm @ 15A, 10V | 4V @ 250μA | 29A Tc | 130nC @ 10V | 125 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| STW33N60M6 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ M6 | Through Hole | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-247-3 | 16 Weeks | NOT SPECIFIED | STW33N | NOT SPECIFIED | 600V | N-Channel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STF15N95K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH5™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stf15n95k5-datasheets-1914.pdf | TO-220-3 Full Pack | 10.4mm | 16.4mm | 4.6mm | Lead Free | 17 Weeks | 329.988449mg | 3 | EAR99 | NOT SPECIFIED | STF15 | 1 | Single | NOT SPECIFIED | 20 ns | 62 ns | 12A | 30V | 950V | 30W Tc | N-Channel | 900pF @ 100V | 500m Ω @ 6A, 10V | 5V @ 100μA | 12A Tc | 40nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||
| FDP054N10 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/onsemiconductor-fdp054n10-datasheets-1918.pdf | TO-220-3 | 10.1mm | 15.38mm | 4.7mm | 3 | 9 Weeks | 2.421g | No SVHC | 3 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | ULTRA-LOW RESISTANCE | No | e3 | Tin (Sn) | Single | 263W | 1 | FET General Purpose Power | 44 ns | 92ns | 39 ns | 80 ns | 120A | 20V | SILICON | SWITCHING | 100V | 3.5V | 263W Tc | TO-220AB | 576A | 0.0055Ohm | N-Channel | 13280pF @ 25V | 5.5m Ω @ 75A, 10V | 4.5V @ 250μA | 120A Tc | 203nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| STW19NM50N | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stw19nm50n-datasheets-1928.pdf | TO-247-3 | 15.75mm | 20.15mm | 5.15mm | Lead Free | 3 | No SVHC | 250mOhm | 3 | NRND (Last Updated: 8 months ago) | EAR99 | Tin | No | e3 | SINGLE | STW19N | 3 | Dual | 110W | 1 | FET General Purpose Power | 12 ns | 16ns | 17 ns | 61 ns | 14A | 25V | SILICON | SWITCHING | 3V | 110W Tc | 56A | 208 mJ | 500V | N-Channel | 1000pF @ 50V | 250m Ω @ 7A, 10V | 4V @ 250μA | 14A Tc | 34nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||
| AUIRFS4127 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/infineontechnologies-auirfs4127-datasheets-1932.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 16 Weeks | 3 | EAR99 | FAST SWITCHING, ULTRA-LOW RESISTANCE | SINGLE | GULL WING | 375mW | 1 | R-PSSO-G2 | 72A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 200V | 200V | 375W Tc | 0.022Ohm | 250 mJ | N-Channel | 5380pF @ 50V | 22m Ω @ 44A, 10V | 5V @ 250μA | 72A Tc | 150nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| STF9NK90Z | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stf9nk90z-datasheets-1937.pdf | TO-220-3 Full Pack | 10.4mm | 16.4mm | 4.6mm | Lead Free | 3 | 12 Weeks | No SVHC | 1.3Ohm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | STF9 | 3 | Single | 40W | 1 | FET General Purpose Power | 22 ns | 13ns | 28 ns | 55 ns | 3.6A | 30V | SILICON | ISOLATED | SWITCHING | 3.75V | 40W Tc | TO-220AB | 8A | 220 mJ | 900V | N-Channel | 2115pF @ 25V | 1.3 Ω @ 3.6A, 10V | 4.5V @ 100μA | 8A Tc | 72nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||
| TSM80N400CF C0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm80n400cfc0g-datasheets-1941.pdf | TO-220-3 Full Pack | 30 Weeks | NOT SPECIFIED | NOT SPECIFIED | 800V | 69W Tc | N-Channel | 1848pF @ 100V | 400m Ω @ 2.7A, 10V | 4V @ 250μA | 12A Tc | 51nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFPE30PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irfpe30pbf-datasheets-1944.pdf | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | 8 Weeks | 38.000013g | 3 | No | 1 | Single | 125W | 1 | TO-247-3 | 1.3nF | 12 ns | 33ns | 30 ns | 82 ns | 4.1A | 20V | 800V | 125W Tc | 3Ohm | 800V | N-Channel | 1300pF @ 25V | 3Ohm @ 2.5A, 10V | 4V @ 250μA | 4.1A Tc | 78nC @ 10V | 3 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| STW23NM50N | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stw23nm50n-datasheets-1950.pdf | TO-247-3 | 15.75mm | 20.15mm | 5.15mm | Lead Free | 3 | 16 Weeks | No SVHC | 190mOhm | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | No | e3 | Tin (Sn) | SINGLE | STW23N | 3 | 125W | 1 | FET General Purpose Power | 6.6 ns | 19ns | 29 ns | 71 ns | 17A | 25V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 500V | 500V | 3V | 125W Tc | 68A | 254 mJ | N-Channel | 1330pF @ 50V | 190m Ω @ 8.5A, 10V | 4V @ 250μA | 17A Tc | 45nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||
| IRFBC40ASPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | /files/vishaysiliconix-irfbc40astrlpbf-datasheets-5609.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 8 Weeks | 1.437803g | 1.2Ohm | 3 | No | 1 | Single | 125W | 1 | D2PAK | 1.036nF | 13 ns | 23ns | 18 ns | 31 ns | 6.2A | 30V | 600V | 125W Tc | 1.2Ohm | 600V | N-Channel | 1036pF @ 25V | 4 V | 1.2Ohm @ 3.7A, 10V | 4V @ 250μA | 6.2A Tc | 42nC @ 10V | 1.2 Ω | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| STW33N60M2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II Plus | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stf33n60m2-datasheets-4194.pdf | TO-247-3 | 15.75mm | 20.15mm | 5.15mm | Lead Free | 16 Weeks | 38.000013g | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | NOT SPECIFIED | STW33N | 1 | Single | NOT SPECIFIED | 190W | 16 ns | 9.6ns | 9 ns | 109 ns | 26A | 25V | 600V | 190W Tc | N-Channel | 1781pF @ 100V | 125m Ω @ 13A, 10V | 4V @ 250μA | 26A Tc | 45.5nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||
| STF15N80K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH5™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stp15n80k5-datasheets-4469.pdf | TO-220-3 Full Pack | 10.4mm | 16.4mm | 4.6mm | Lead Free | 3 | 17 Weeks | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | not_compliant | e3 | Matte Tin (Sn) - annealed | STF15 | Single | 35W | 1 | FET General Purpose Power | 19 ns | 17.6ns | 10 ns | 44 ns | 14A | 30V | SILICON | ISOLATED | SWITCHING | 35W Tc | TO-220AB | 56A | 800V | N-Channel | 1100pF @ 100V | 375m Ω @ 7A, 10V | 5V @ 100μA | 14A Tc | 32nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||
| STP180N10F3 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ III | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stp180n10f3-datasheets-1966.pdf | TO-220-3 | Lead Free | 3 | 12 Weeks | 5.1MOhm | ACTIVE (Last Updated: 7 months ago) | EAR99 | Tin | No | SINGLE | STP180 | 3 | 315W | 1 | FET General Purpose Power | R-PSFM-T3 | 25.6 ns | 97.1ns | 6.9 ns | 99.9 ns | 120A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 315W Tc | TO-220AB | 480A | 100V | N-Channel | 6665pF @ 25V | 5.1m Ω @ 60A, 10V | 4V @ 250μA | 120A Tc | 114.6nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| SIHH20N50E-T1-GE3 | Vishay Siliconix | $3.93 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | E | Surface Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihh20n50et1ge3-datasheets-1970.pdf | 8-PowerTDFN | 18 Weeks | 500V | 174W Tc | N-Channel | 2063pF @ 100V | 147m Ω @ 10A, 10V | 4V @ 250μA | 22A Tc | 84nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| R8008ANX | ROHM Semiconductor | $15.97 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | TO-220-3 Full Pack | Lead Free | 3 | 10 Weeks | No | Single | 50W | 1 | R-PSFM-T3 | 32 ns | 50ns | 30 ns | 85 ns | 8A | 30V | SILICON | ISOLATED | SWITCHING | 50W Tc | TO-220AB | 8A | 32A | 4.2 mJ | 800V | N-Channel | 1080pF @ 25V | 1.03 Ω @ 4A, 10V | 5V @ 1mA | 8A Ta | 39nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
| SIHP21N60EF-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-sihp21n60efge3-datasheets-1837.pdf | TO-220-3 | Lead Free | 3 | 14 Weeks | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | 21A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 600V | 600V | 227W Tc | TO-220AB | 53A | 0.176Ohm | 367 mJ | N-Channel | 2030pF @ 100V | 176m Ω @ 11A, 10V | 4V @ 250μA | 21A Tc | 84nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||
| STF26N60DM6 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ DM6 | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stf26n60dm6-datasheets-1843.pdf | TO-220-3 Full Pack | 16 Weeks | compliant | NOT SPECIFIED | STF26 | NOT SPECIFIED | 600V | 30W Tc | N-Channel | 940pF @ 100V | 195m Ω @ 9A, 10V | 4.75V @ 250μA | 18A Tc | 24nC @ 10V | 10V | ±25V |
