Products
Manufacturer
RFQ
NEWS
ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Manufacturer Package Identifier | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| SI2319DS-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-si2319dst1e3-datasheets-9020.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | 14 Weeks | 1.437803g | Unknown | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 750mW | 1 | Other Transistors | 7 ns | 15ns | 25 ns | 25 ns | -2.3A | 20V | SILICON | SWITCHING | 40V | 40V | -3V | 750mW Ta | 0.082Ohm | P-Channel | 470pF @ 20V | -3 V | 82m Ω @ 3A, 10V | 3V @ 250μA | 2.3A Ta | 17nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| RZQ050P01TR | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/rohm-rzq050p01tr-datasheets-3401.pdf | SOT-23-6 Thin, TSOT-23-6 | 3mm | 950μm | 1.8mm | 6 | 20 Weeks | No SVHC | 6 | yes | EAR99 | No | e1 | DUAL | GULL WING | 260 | 6 | Single | 10 | 1.25W | 1 | Other Transistors | 12 ns | 100ns | 225 ns | 420 ns | 5A | 10V | SILICON | SWITCHING | 12V | -300mV | 600mW Ta | 5A | 20A | -12V | P-Channel | 2850pF @ 6V | -300 mV | 26m Ω @ 5A, 4.5V | 1V @ 1mA | 5A Ta | 35nC @ 4.5V | 1.5V 4.5V | ±10V | |||||||||||||||||||||||||||||||||||||||||
| SISS10DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-siss10dnt1ge3-datasheets-8207.pdf | PowerPAK® 1212-8S | 14 Weeks | EAR99 | unknown | NOT SPECIFIED | NOT SPECIFIED | 60A | 40V | 57W Tc | N-Channel | 3750pF @ 20V | 2.65m Ω @ 15A, 10V | 2.4V @ 250μA | 60A Tc | 75nC @ 10V | 4.5V 10V | +20V, -16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDD6680AS | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench®, SyncFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/onsemiconductor-fdd6680as-datasheets-8001.pdf | 30V | 55A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 2 | 10 Weeks | 260.37mg | No SVHC | 3 | ACTIVE (Last Updated: 16 hours ago) | yes | EAR99 | No | e3 | Tin (Sn) | GULL WING | FDD6680 | Single | 60mW | 1 | FET General Purpose Power | R-PSSO-G2 | 10 ns | 6ns | 12 ns | 28 ns | 55A | 20V | 30V | SILICON | DRAIN | SWITCHING | 1.4V | 60W Ta | 205 mJ | 30V | N-Channel | 1200pF @ 15V | 1.4 V | 10.5m Ω @ 12.5A, 10V | 3V @ 1mA | 55A Ta | 29nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| SQJ423EP-T1_GE3 | Vishay Siliconix | $36.31 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqj423ept1ge3-datasheets-8262.pdf | PowerPAK® SO-8 | 12 Weeks | PowerPAK® SO-8 | 40V | 68W Tc | P-Channel | 4500pF @ 25V | 14mOhm @ 10A, 10V | 2.5V @ 250μA | 55A Tc | 130nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4850BDY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/vishaysiliconix-si4850bdyt1ge3-datasheets-7901.pdf | 8-SOIC (0.154, 3.90mm Width) | 14 Weeks | 8-SO | 60V | 2.5W Ta 4.5W Tc | 16mOhm | N-Channel | 790pF @ 30V | 19.5mOhm @ 10A, 10V | 2.8V @ 250μA | 8.4A Ta 11.3A Tc | 17nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIA416DJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sia416djt1ge3-datasheets-8270.pdf&product=vishaysiliconix-sia416djt1ge3-6835375 | PowerPAK® SC-70-6 | 2.05mm | 750μm | 2.05mm | Lead Free | 3 | 14 Weeks | Unknown | 83MOhm | 6 | yes | EAR99 | DUAL | NO LEAD | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 3.5W | 1 | S-PDSO-N3 | 25 ns | 100ns | 15 ns | 11.3A | 20V | SILICON | DRAIN | SWITCHING | 1.6V | 3.5W Ta 19W Tc | 0.45 mJ | 100V | N-Channel | 295pF @ 50V | 83m Ω @ 3.2A, 10V | 3V @ 250μA | 11.3A Tc | 10nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| CSD17578Q5A | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 8-PowerTDFN | 4.9mm | 6mm | Contains Lead | 5 | 16 Weeks | 8 | ACTIVE (Last Updated: 2 days ago) | yes | 1mm | EAR99 | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | DUAL | NO LEAD | 260 | CSD17578 | Single | NOT SPECIFIED | 1 | 25A | SILICON | DRAIN | SWITCHING | 30V | 30V | 3.1W Ta 42W Tc | 16A | 132A | 0.0093Ohm | 75 pF | 23 mJ | N-Channel | 1510pF @ 15V | 6.9m Ω @ 10A, 10V | 1.9V @ 250μA | 25A Ta | 22.3nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| SI8416DB-T2-E1 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si8416dbt2e1-datasheets-8279.pdf | 6-UFBGA | 1.5mm | 310μm | 1mm | 43 Weeks | No SVHC | 6 | EAR99 | No | e3 | Matte Tin (Sn) | 1 | Single | 2.77W | FET General Purpose Powers | 13 ns | 30ns | 20 ns | 40 ns | 16A | 5V | 8V | 350mV | 2.77W Ta 13W Tc | N-Channel | 1470pF @ 4V | 23m Ω @ 1.5A, 4.5V | 800mV @ 250μA | 16A Tc | 26nC @ 4.5V | 1.2V 4.5V | ±5V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| STQ2NK60ZR-AP | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Through Hole | Through Hole | -55°C~150°C TJ | Tape & Box (TB) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stf2nk60z-datasheets-4817.pdf | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | 3 | 8 Weeks | ACTIVE (Last Updated: 7 months ago) | EAR99 | e3 | Matte Tin (Sn) | BOTTOM | NOT SPECIFIED | STQ2 | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | O-PBCY-T3 | 400mA | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 600V | 600V | 3W Tc | 0.4A | 1.6A | 8Ohm | 90 mJ | N-Channel | 170pF @ 25V | 8 Ω @ 700mA, 10V | 4.5V @ 50μA | 400mA Tc | 10nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| MCU60N04-TP | Micro Commercial Co | $0.67 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/microcommercialco-mcu60n04tp-datasheets-8312.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12 Weeks | 260 | 10 | 40V | 1.25W | N-Channel | 1800pF @ 20V | 13m Ω @ 20A, 10V | 2.5V @ 250μA | 60A | 29nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIRA26DP-T1-RE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2018 | /files/vishaysiliconix-sira26dpt1re3-datasheets-8337.pdf | PowerPAK® SO-8 | 1.17mm | 14 Weeks | EAR99 | S17-0173-Single | unknown | NOT SPECIFIED | 1 | NOT SPECIFIED | 3.9W | 150°C | 9 ns | 16 ns | 30.3A | 43.1W Tc | 25V | N-Channel | 2247pF @ 10V | 2.65m Ω @ 15A, 10V | 2.5V @ 250μA | 60A Tc | 44nC @ 10V | 4.5V 10V | +16V, -12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMP1081UCB4-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/diodesincorporated-dmp1081ucb47-datasheets-8339.pdf | 4-UFBGA, WLBGA | 17 Weeks | 4 | yes | EAR99 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | NOT SPECIFIED | 3.3A | 12V | 820mW Ta | P-Channel | 350pF @ 6V | 80m Ω @ 500mA, 4.5V | 650mV @ 250μA | 3A Ta 3.3A Ta | 5nC @ 4.5V | 0.9V 4.5V | -6V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPH11006NL,LQ | Toshiba Semiconductor and Storage | $2.27 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVIII-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2014 | 8-PowerVDFN | 5 | 16 Weeks | 850.995985mg | 8 | EAR99 | DUAL | FLAT | NOT SPECIFIED | 1 | NOT SPECIFIED | 1 | S-PDSO-F5 | 11 ns | 4ns | 7.1 ns | 27 ns | 17A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 1.6W Ta 34W Tc | 40A | 33 mJ | N-Channel | 2000pF @ 30V | 11.4m Ω @ 8.5A, 10V | 2.5V @ 200μA | 17A Tc | 23nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| TPN2R903PL,L1Q | Toshiba Semiconductor and Storage | $0.63 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSIX-H | Surface Mount | 175°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 8-PowerVDFN | 12 Weeks | 30V | 630mW Ta 75W Tc | N-Channel | 2300pF @ 15V | 2.9m Ω @ 35A, 10V | 2.1V @ 200μA | 70A Tc | 26nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVTFS4C05NTAG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-nvtfs4c05ntag-datasheets-8355.pdf | 8-PowerWDFN | Lead Free | 5 | 18 Weeks | 8 | ACTIVE (Last Updated: 1 week ago) | yes | EAR99 | No | e3 | Tin (Sn) | Halogen Free | YES | DUAL | FLAT | 8 | Single | 3.2W | 1 | R-PDSO-F5 | 8 ns | 25ns | 5 ns | 26 ns | 22A | 20V | SILICON | DRAIN | SWITCHING | 30V | 30V | 3.2W Ta 68W Tc | 433A | N-Channel | 1988pF @ 15V | 3.6m Ω @ 30A, 10V | 2.2V @ 250μA | 22A Ta 102A Tc | 31nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| TSM060N03PQ33 RGG | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm060n03pq33rgg-datasheets-8361.pdf | 8-PowerWDFN | 20 Weeks | 8-PDFN (3x3) | 30V | 40W Tc | N-Channel | 1342pF @ 15V | 6mOhm @ 15A, 10V | 2.5V @ 250μA | 62A Tc | 25.4nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMTH4007LK3Q-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmth4007lk3q13-datasheets-8204.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 23 Weeks | yes | EAR99 | not_compliant | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 70A | 40V | 2.6W Ta | N-Channel | 1895pF @ 30V | 7.3m Ω @ 20A, 10V | 3V @ 250μA | 16.8A Ta 70A Tc | 29.1nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMP6250SE-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmp6250se13-datasheets-8292.pdf | TO-261-4, TO-261AA | 6.55mm | 1.65mm | 3.55mm | 4 | 22 Weeks | 7.994566mg | 3 | EAR99 | HIGH RELIABILITY | Tin | e3 | DUAL | GULL WING | 260 | DMP6250 | 1 | Single | 30 | 1 | R-PDSO-G4 | 6.3 ns | 10.3ns | 39.8 ns | 91.4 ns | 6.1A | 20V | SILICON | DRAIN | SWITCHING | 60V | 1.8W Ta 14W Tc | 0.25Ohm | 8 mJ | -60V | P-Channel | 551pF @ 30V | 250m Ω @ 1A, 10V | 3V @ 250μA | 2.1A Ta | 9.7nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| AO4294 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | 8-SOIC (0.154, 3.90mm Width) | 16 Weeks | 8 | unknown | 11.5A | 100V | 3.1W Ta | N-Channel | 2420pF @ 50V | 12m Ω @ 11.5A, 10V | 2.4V @ 250μA | 11.5A Ta | 50nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STL66N3LLH5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, STripFET™ V | Surface Mount | Surface Mount | -55°C~175°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stl66n3llh5-datasheets-8030.pdf | 8-PowerVDFN | Lead Free | 14 Weeks | 5.8MOhm | 8 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | e3 | Matte Tin (Sn) - annealed | STL66 | Single | 4.8W | FET General Purpose Power | 9.3 ns | 14.5ns | 4.5 ns | 22.7 ns | 80A | 22V | 72W Tc | 30V | N-Channel | 1500pF @ 25V | 5.8m Ω @ 10.5A, 10V | 3V @ 250μA | 80A Tc | 12nC @ 4.5V | 4.5V 10V | ±22V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI2337DS-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -50°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si2337dst1e3-datasheets-2246.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.02mm | 1.4mm | Lead Free | 3 | 14 Weeks | 1.437803g | No SVHC | 270MOhm | 3 | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 760mW | 1 | Other Transistors | 15 ns | 18ns | 12 ns | 20 ns | -2.2A | 20V | SILICON | 80V | -4V | 760mW Ta 2.5W Tc | -80V | P-Channel | 500pF @ 40V | -4 V | 270m Ω @ 1.2A, 10V | 4V @ 250μA | 2.2A Tc | 17nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| NVATS5A112PLZT4G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-nvats5a112plzt4g-datasheets-8074.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 7 Weeks | ACTIVE (Last Updated: 1 day ago) | yes | not_compliant | e6 | Tin/Bismuth (Sn/Bi) | AEC-Q101 | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 48W Tc | 27A | 81A | 0.043Ohm | 50 mJ | P-Channel | 1450pF @ 20V | 43m Ω @ 13A, 10V | 2.6V @ 1mA | 27A Ta | 33.5nC @ 10V | 4V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| FCD2250N80Z | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET® II | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-fcd2250n80z-datasheets-8080.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 15 Weeks | 260.37mg | 2.25Ohm | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | not_compliant | 8541.29.00.95 | e3 | Tin (Sn) | 245 | Single | NOT SPECIFIED | 11 ns | 6.7ns | 8.7 ns | 26 ns | 2.6A | 30V | 39W Tc | 800V | N-Channel | 585pF @ 100V | 2.25 Ω @ 1.3A, 10V | 4.5V @ 260μA | 2.6A Tc | 14nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVATS5A106PLZT4G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-nvats5a106plzt4g-datasheets-8038.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 5 Weeks | ACTIVE (Last Updated: 1 day ago) | yes | not_compliant | e6 | Tin/Bismuth (Sn/Bi) | NOT SPECIFIED | NOT SPECIFIED | 40V | 48W Tc | P-Channel | 1380pF @ 20V | 25m Ω @ 15A, 10V | 2.6V @ 1mA | 33A Ta | 29nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TSM60NB1R4CP ROG | Taiwan Semiconductor Corporation | $10.08 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 3 (168 Hours) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm60nb1r4cprog-datasheets-7917.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 36 Weeks | 600V | 28.4W Tc | N-Channel | 257.3pF @ 100V | 1.4 Ω @ 900mA, 10V | 4V @ 250μA | 3A Tc | 7.12nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RD3H045SPTL1 | ROHM Semiconductor | $2.28 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 16 Weeks | EAR99 | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 45V | 45V | 15W Tc | 4.5A | 9A | 0.26Ohm | P-Channel | 550pF @ 10V | 155m Ω @ 4.5A, 10V | 3V @ 1mA | 4.5A Ta | 12nC @ 5V | 4V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RJK03M5DNS-00#J5 | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-rjk03m5dns00j5-datasheets-8142.pdf | 8-PowerWDFN | 84 Weeks | 8 | yes | NOT SPECIFIED | 8 | NOT SPECIFIED | 25A | 30V | 15W Tc | N-Channel | 1890pF @ 10V | 6.3m Ω @ 12.5A, 10V | 25A Ta | 10.4nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN2R8-40YSDX | Nexperia USA Inc. | $1.40 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | SC-100, SOT-669 | 12 Weeks | 4 | 40V | 147W Ta | N-Channel | 4507pF @ 20V | 2.8m Ω @ 25A, 10V | 3.6V @ 1mA | 160A Ta | 62nC @ 10V | Schottky Diode (Body) | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DI9435T | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/diodesincorporated-di9435t-datasheets-8156.pdf | -30V | -5.3A | 8-TSOP (0.130, 3.30mm Width) | Contains Lead | 8 | 2.5W | 8-SO | 950pF | 5.3A | 30V | P-Channel | 950pF @ 15V | 50mOhm @ 5.3A, 10V | 1.4V @ 250μA | 5.3A Ta | 40nC @ 10V | 50 mΩ |
