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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| BSS816NW L6327 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bss816nwl6327-datasheets-6459.pdf | SC-70, SOT-323 | 3 | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | compliant | e3 | MATTE TIN | YES | DUAL | GULL WING | 260 | 3 | 40 | 1 | FET General Purpose Power | Not Qualified | R-PDSO-G3 | SILICON | SINGLE WITH BUILT-IN DIODE | 20V | 20V | 500mW Ta | 1.4A | 0.16Ohm | 10 pF | N-Channel | 180pF @ 10V | 160m Ω @ 1.4A, 2.5V | 750mV @ 3.7μA | 1.4A Ta | 0.6nC @ 2.5V | 1.8V 2.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||
| AON7448 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SDMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2011 | 8-PowerVDFN | Lead Free | 8 | 36W | 1 | 24A | 25V | 80V | 3.1W Ta 36W Tc | N-Channel | 1100pF @ 40V | 30m Ω @ 10A, 10V | 4.1V @ 250μA | 7.1A Ta 24A Tc | 17.5nC @ 10V | 8V 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLB3036GPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | /files/infineontechnologies-irlb3036gpbf-datasheets-6254.pdf | TO-220-3 | 10.5156mm | 15.24mm | 4.69mm | 3 | No | Single | 380W | 1 | TO-220AB | 11.21nF | 66 ns | 220ns | 110 ns | 110 ns | 195A | 16V | 60V | 380W Tc | 2.8mOhm | 60V | N-Channel | 11210pF @ 50V | 2.4mOhm @ 165A, 10V | 2.5V @ 250μA | 195A Tc | 140nC @ 4.5V | 2.4 mΩ | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||
| AOT2N60 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/alphaomegasemiconductorinc-aot430-datasheets-0079.pdf | TO-220-3 | unknown | 74W | 1 | 2A | 30V | 600V | 74W Tc | N-Channel | 325pF @ 25V | 4.4 Ω @ 1A, 10V | 4.5V @ 250μA | 2A Tc | 11.4nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AON7450 | Alpha & Omega Semiconductor Inc. | $0.58 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SDMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2011 | 8-PowerVDFN | 8 | 43W | 1 | 21A | 25V | 100V | 3.1W Ta 43W Tc | N-Channel | 1090pF @ 50V | 48m Ω @ 7.8A, 10V | 4.1V @ 250μA | 5.6A Ta 21A Tc | 20nC @ 10V | 8V 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFSL4229PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -40°C | MOSFET (Metal Oxide) | RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfsl4229pbf-datasheets-6298.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.668mm | 9.65mm | 4.826mm | 3 | No | Single | 330W | TO-262 | 4.56nF | 18 ns | 31ns | 21 ns | 30 ns | 45A | 30V | 250V | 330W Tc | 48mOhm | 250V | N-Channel | 4560pF @ 25V | 48mOhm @ 26A, 10V | 5V @ 250μA | 45A Tc | 110nC @ 10V | 48 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| IRF6201TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/infineontechnologies-irf6201trpbf-datasheets-6208.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 3.9878mm | Lead Free | 8 | 15 Weeks | 8 | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | Single | 2.5W | 1 | FET General Purpose Power | 29 ns | 100ns | 265 ns | 320 ns | 27A | 12V | SILICON | SWITCHING | 2.5W Ta | 0.00245Ohm | 20V | N-Channel | 8555pF @ 16V | 2.45m Ω @ 27A, 4.5V | 1.1V @ 100μA | 27A Ta | 195nC @ 4.5V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||
| IRF6709S2TR1PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2008 | /files/infineontechnologies-irf6709s2tr1pbf-datasheets-6201.pdf | DirectFET™ Isometric S1 | 4.826mm | 558.8μm | 3.95mm | Lead Free | No SVHC | 7.8MOhm | 5 | No | 1.8W | 1 | DIRECTFET S1 | 1.01nF | 8.4 ns | 25ns | 9.5 ns | 9.1 ns | 12A | 20V | 25V | 25V | 1.8V | 1.8W Ta 21W Tc | 23 ns | 13.5mOhm | 25V | N-Channel | 1010pF @ 13V | 1.8 V | 7.8mOhm @ 12A, 10V | 2.35V @ 25μA | 12A Ta 39A Tc | 12nC @ 4.5V | 7.8 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IRF7413GTRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf7413gtrpbf-datasheets-6340.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 3.9878mm | 8 | No | Single | 2.5W | 8-SO | 1.8nF | 8.6 ns | 50ns | 46 ns | 52 ns | 13A | 20V | 30V | 2.5W Ta | 11mOhm | 30V | N-Channel | 1800pF @ 25V | 11mOhm @ 7.3A, 10V | 3V @ 250μA | 13A Ta | 79nC @ 10V | 11 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| AON7444 | Alpha & Omega Semiconductor Inc. | $4.27 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SDMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | 8-PowerVDFN | 5 | yes | EAR99 | e4 | Gold (Au) | DUAL | FLAT | NOT SPECIFIED | 8 | NOT SPECIFIED | 1 | S-PDSO-F5 | 33A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 3.1W Ta 42W Tc | 75A | 0.022Ohm | 45 mJ | N-Channel | 2000pF @ 30V | 22m Ω @ 9A, 10V | 2.6V @ 250μA | 9A Ta 33A Tc | 34nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| AO4444 | Alpha & Omega Semiconductor Inc. | $0.18 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SDMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/alphaomegasemiconductorinc-ao4444-datasheets-5997.pdf | 8-SOIC (0.154, 3.90mm Width) | 16 Weeks | 8 | No | e3 | Matte Tin (Sn) | 3.1W | 1 | 11A | 25V | 80V | 3.1W Ta | N-Channel | 2865pF @ 40V | 12m Ω @ 11A, 10V | 3.8V @ 250μA | 11A Ta | 46nC @ 10V | 7V 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| AON6702 | Alpha & Omega Semiconductor Inc. | $0.11 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SRFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/alphaomegasemiconductorinc-aon6702-datasheets-6151.pdf | 8-PowerSMD, Flat Leads | 85A | 30V | 2.3W Ta 83W Tc | N-Channel | 7080pF @ 15V | 2m Ω @ 20A, 10V | 2.4V @ 250μA | 26A Ta 85A Tc | 123nC @ 10V | Schottky Diode (Body) | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF9204PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf9204pbf-datasheets-6153.pdf | TO-220-3 | 3 | No | 143W | 1 | TO-220AB | 7.676nF | 56A | 20V | 40V | 143W Tc | 23mOhm | -40V | P-Channel | 7676pF @ 25V | 16mOhm @ 37A, 10V | 3V @ 100μA | 56A Ta | 224nC @ 10V | 16 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IRFB3077GPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfb3077gpbf-datasheets-6176.pdf | TO-220-3 | 10.668mm | 16.51mm | 4.826mm | Lead Free | No SVHC | 3 | No | Single | 370W | 1 | TO-220AB | 9.4nF | 25 ns | 87ns | 95 ns | 69 ns | 210A | 20V | 75V | 4V | 370W Tc | 3.3mOhm | 75V | N-Channel | 9400pF @ 50V | 4 V | 3.3mOhm @ 75A, 10V | 4V @ 250μA | 120A Tc | 220nC @ 10V | 3.3 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| AON6450 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SDMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2011 | 8-PowerSMD, Flat Leads | Lead Free | 52A | 100V | 2.3W Ta 83W Tc | N-Channel | 3100pF @ 50V | 14.5m Ω @ 20A, 10V | 4V @ 250μA | 9A Ta 52A Tc | 52nC @ 10V | 7V 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOT3N50 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/alphaomegasemiconductorinc-aot3n50-datasheets-6055.pdf | TO-220-3 | Lead Free | 16 Weeks | No | 74W | 1 | 3A | 30V | 500V | 74W Tc | N-Channel | 331pF @ 25V | 3 Ω @ 1.5A, 10V | 4.5V @ 250μA | 3A Tc | 8nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFB4310GPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfb4310gpbf-datasheets-6195.pdf | TO-220-3 | 10.668mm | 16.51mm | 4.826mm | Lead Free | Unknown | 3 | No | Single | 300W | 1 | TO-220AB | 7.67nF | 26 ns | 110ns | 78 ns | 68 ns | 130A | 20V | 100V | 300W Tc | 7mOhm | 100V | N-Channel | 7670pF @ 50V | 4 V | 7mOhm @ 75A, 10V | 4V @ 250μA | 130A Tc | 250nC @ 10V | 7 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IPP45N06S4L08AKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipi45n06s4l08aksa1-datasheets-0259.pdf | TO-220-3 | 3 | EAR99 | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 60V | 60V | 71W Tc | TO-220AB | 45A | 180A | 0.0079Ohm | 97 mJ | N-Channel | 4780pF @ 25V | 8.2m Ω @ 45A, 10V | 2.2V @ 35μA | 45A Tc | 64nC @ 10V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||
| IRFB4310ZGPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfb4310zgpbf-datasheets-6219.pdf | TO-220-3 | 10.668mm | 16.51mm | 4.826mm | Unknown | 3 | No | Single | 250W | 1 | TO-220AB | 6.86nF | 20 ns | 60ns | 57 ns | 55 ns | 120A | 20V | 100V | 250W Tc | 6mOhm | 100V | N-Channel | 6860pF @ 50V | 4 V | 6mOhm @ 75A, 10V | 4V @ 150μA | 120A Tc | 170nC @ 10V | 6 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| AOT3N60 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/alphaomegasemiconductorinc-aot430-datasheets-0079.pdf | TO-220-3 | unknown | FET General Purpose Power | 2.5A | Single | 600V | 83W Tc | N-Channel | 370pF @ 25V | 3.5 Ω @ 1.25A, 10V | 4.5V @ 250μA | 2.5A Tc | 12nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM3K35MFV(TPL3) | Toshiba Semiconductor and Storage | $0.07 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | π-MOSVI | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | SOT-723 | 1.2mm | 500μm | 800μm | 11 Weeks | 3 | No | Single | 150mW | 180mA | 10V | 150mW Ta | 20V | N-Channel | 9.5pF @ 3V | 3 Ω @ 50mA, 4V | 1V @ 1mA | 180mA Ta | 1.2V 4V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOB440 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2008 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | unknown | 75A | 60V | 150W Tc | N-Channel | 4560pF @ 30V | 7.5m Ω @ 30A, 10V | 4V @ 250μA | 75A Tc | 88nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOB418L | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SDMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2010 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 3 | 333W | 1 | 105A | 25V | 100V | 2.1W Ta 333W Tc | N-Channel | 5200pF @ 50V | 9.7m Ω @ 20A, 10V | 3.9V @ 250μA | 9.5A Ta 105A Tc | 83nC @ 10V | 4.5V 10V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOT5N60 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/alphaomegasemiconductorinc-aot430-datasheets-0079.pdf | TO-220-3 | 132W | 1 | 5A | 30V | 600V | 132W Tc | N-Channel | 700pF @ 25V | 1.8 Ω @ 2.5A, 10V | 4.5V @ 250μA | 5A Tc | 20nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOD4180 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SDMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2010 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 150W | 1 | 13.5A | 25V | 80V | 3.1W Ta 150W Tc | N-Channel | 2410pF @ 40V | 14m Ω @ 20A, 10V | 4V @ 250μA | 10A Ta 54A Tc | 38nC @ 10V | 7V 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AO3460 | Alpha & Omega Semiconductor Inc. | $0.06 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/alphaomegasemiconductor-ao3460-datasheets-6050.pdf | TO-236-3, SC-59, SOT-23-3 | Lead Free | 16 Weeks | 3 | No | 1.4W | 1 | FET General Purpose Power | 650mA | 20V | Single | 60V | 1.4W Ta | 0.65A | N-Channel | 27pF @ 30V | 1.7 Ω @ 650mA, 10V | 2.5V @ 250μA | 650mA Ta | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| AOT416 | Alpha & Omega Semiconductor Inc. | $0.17 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SDMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | TO-220-3 | Lead Free | FET General Purpose Power | 42A | Single | 100V | 1.92W Ta 150W Tc | N-Channel | 1450pF @ 50V | 37m Ω @ 20A, 10V | 4V @ 250μA | 4.7A Ta 42A Tc | 23nC @ 10V | 7V 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| EPC2001 | EPC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eGaN® | Surface Mount | Surface Mount | -40°C~125°C TJ | Cut Tape (CT) | 1 (Unlimited) | GaNFET (Gallium Nitride) | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/epc-epc2001-datasheets-5861.pdf | Die | Die Outline (11-Solder Bar) | 950pF | 25A | 100V | N-Channel | 950pF @ 50V | 7mOhm @ 25A, 5V | 2.5V @ 5mA | 25A Ta | 10nC @ 5V | 7 mΩ | 5V | +6V, -5V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7860ADP-T1-E3 | Vishay Siliconix | $0.85 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7860adpt1e3-datasheets-5966.pdf | PowerPAK® SO-8 | Lead Free | 5 | 9.5mOhm | 8 | yes | EAR99 | FAST SWITCHING | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | Single | 40 | 1.8W | 1 | FET General Purpose Power | R-XDSO-C5 | 18 ns | 12ns | 12 ns | 46 ns | 11A | 20V | SILICON | DRAIN | SWITCHING | 1.8W Ta | 50A | 60 mJ | 30V | N-Channel | 9.5m Ω @ 16A, 10V | 3V @ 250μA | 11A Ta | 18nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||
| EPC2014 | EPC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eGaN® | Surface Mount | Surface Mount | -40°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | GaNFET (Gallium Nitride) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/epc-epc2014-datasheets-5968.pdf | Die | 14 Weeks | Die Outline (5-Solder Bar) | 325pF | 10A | 40V | N-Channel | 325pF @ 20V | 16mOhm @ 5A, 5V | 2.5V @ 2mA | 10A Ta | 2.8nC @ 5V | 16 mΩ | 5V | +6V, -5V |
