| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Type | Series | Mount | Mounting Type | Operating Temperature | Packaging | Size / Dimension | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Capacitance | Number of Terminations | Factory Lead Time | Weight | Number of Pins | Pbfree Code | ECCN Code | Radiation Hardening | Reach Compliance Code | Capacitance @ Frequency | Applications | Surface Mount | Voltage - Supply | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | JESD-30 Code | Supplier Device Package | Input Capacitance | Memory Size | Memory Type | Termination Style | Output Type | Circuit | Voltage - Input | Voltage - Load | Load Current | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Power - Max | Power Dissipation-Max | Power Line Protection | Voltage - Breakdown (Min) | Current - Peak Pulse (10/1000μs) | Voltage - Clamping (Max) @ Ipp | Voltage - Reverse Standoff (Typ) | Unidirectional Channels | Power - Peak Pulse | Current - Max | Speed - Read | Speed - Write | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | On-State Resistance (Max) | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Current - Collector Cutoff (Max) | Transistor Type | DC Current Gain (hFE) (Min) @ Ic, Vce | Frequency - Transition | Vce Saturation (Max) @ Ib, Ic | Form Factor | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Resistor - Base (R1) | Resistor - Emitter Base (R2) | Mfr |
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| SSM3K15F,LF | Toshiba Semiconductor and Storage | $0.22 |
Min: 1 Mult: 1 |
download | π-MOSIV | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm3k15flf-datasheets-7374.pdf | TO-236-3, SC-59, SOT-23-3 | 12 Weeks | 30V | 200mW Ta | N-Channel | 7.8pF @ 3V | 4 Ω @ 10mA, 4V | 1.5V @ 100μA | 100mA Ta | 2.5V 4V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM3K7002CFU,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSVII-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2015 | /files/toshibasemiconductorandstorage-ssm3k7002cfulf-datasheets-7380.pdf | SC-70, SOT-323 | 3 | 12 Weeks | yes | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-G3 | 170mA | SILICON | SINGLE WITH BUILT-IN DIODE AND RESISTOR | SWITCHING | 60V | 60V | 150mW Ta | 0.17A | 4.7Ohm | N-Channel | 17pF @ 10V | 3.9 Ω @ 100mA, 10V | 2.1V @ 250μA | 170mA Ta | 0.35nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM3J168F,LF | Toshiba Semiconductor and Storage | $0.31 |
Min: 1 Mult: 1 |
download | U-MOSVI | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm3j168flf-datasheets-7593.pdf | TO-236-3, SC-59, SOT-23-3 | 12 Weeks | 60V | 1.2W Ta | P-Channel | 82pF @ 10V | 1.9 Ω @ 100mA, 4.5V | 2V @ 1mA | 400mA Ta | 3nC @ 10V | 4V 10V | +20V, -16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM3K345R,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSVI | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2016 | /files/toshibasemiconductorandstorage-ssm3k345rlf-datasheets-7427.pdf | SOT-23-3 Flat Leads | 3 | 12 Weeks | unknown | YES | DUAL | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-F3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | 1W Ta | 4A | 0.033Ohm | N-Channel | 410pF @ 10V | 33m Ω @ 4A, 4.5V | 1V @ 1mA | 4A Ta | 3.6nC @ 4.5V | 1.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK2009TE85LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | /files/toshibasemiconductorandstorage-2sk2009te85lf-datasheets-7797.pdf | TO-236-3, SC-59, SOT-23-3 | 52 Weeks | 3 | EAR99 | unknown | FET General Purpose Powers | 60 ns | 120 ns | 200mA | 20V | Single | 30V | 200mW Ta | 0.2A | N-Channel | 70pF @ 3V | 2 Ω @ 50MA, 2.5V | 1.5V @ 100μA | 200mA Ta | 2.5V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPN4R303NL,L1Q | Toshiba Semiconductor and Storage | $0.72 |
Min: 1 Mult: 1 |
download | U-MOSVIII-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tpn4r303nll1q-datasheets-0015.pdf | 8-PowerVDFN | 12 Weeks | 8 | 1 | Single | 8-TSON Advance (3.3x3.3) | 1.4nF | 10.5 ns | 4.5ns | 3.5 ns | 19 ns | 40A | 20V | 30V | 700mW Ta 34W Tc | 6.3mOhm | 30V | N-Channel | 1400pF @ 15V | 4.3mOhm @ 20A, 10V | 2.3V @ 200μA | 40A Tc | 14.8nC @ 10V | 4.3 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPN3300ANH,LQ | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSVIII-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tpn3300anhlq-datasheets-9986.pdf | 8-PowerVDFN | 680pF | 12 Weeks | 8 | Single | 27W | 4.4ns | 3.8 ns | 15 ns | 9.4A | 20V | 700mW Ta 27W Tc | 100V | N-Channel | 880pF @ 50V | 33m Ω @ 4.7A, 10V | 4V @ 100μA | 9.4A Tc | 11nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPN2R703NL,L1Q | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSVIII-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | /files/toshibasemiconductorandstorage-tpn2r703nll1q-datasheets-0917.pdf | 8-PowerVDFN | 12 Weeks | 8 | No | 1 | Single | 8-TSON Advance (3.3x3.3) | 2.1nF | 11.5 ns | 4.4ns | 5.7 ns | 24 ns | 45A | 20V | 30V | 700mW Ta 42W Tc | 3.3mOhm | N-Channel | 2100pF @ 15V | 2.7mOhm @ 22.5A, 10V | 2.3V @ 300μA | 45A Tc | 21nC @ 10V | 2.7 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPH3R203NL,L1Q | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSVIII-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2014 | /files/toshibasemiconductorandstorage-tph3r203nll1q-datasheets-1068.pdf | 8-PowerVDFN | 5 | 12 Weeks | 850.995985mg | 8 | EAR99 | No | DUAL | FLAT | 1 | Single | 1 | S-PDSO-F5 | 24 ns | 4.4ns | 5.7 ns | 11.5 ns | 47A | 20V | SILICON | DRAIN | SWITCHING | 1.6W Ta 44W Tc | 60A | 200A | 0.0047Ohm | 94 mJ | 30V | N-Channel | 2100pF @ 15V | 3.2m Ω @ 23.5A, 10V | 2.3V @ 300μA | 47A Tc | 21nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPH7R006PL,L1Q | Toshiba Semiconductor and Storage | $0.64 |
Min: 1 Mult: 1 |
download | U-MOSIX-H | Surface Mount | 175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tph7r006pll1q-datasheets-1253.pdf | 8-PowerVDFN | 12 Weeks | 8-SOP Advance (5x5) | 60V | 81W Tc | N-Channel | 1875pF @ 30V | 13.5mOhm @ 10A, 4.5V | 2.5V @ 200μA | 60A Tc | 22nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK6R7P06PL,RQ | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSIX-H | Surface Mount | 175°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2017 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tk6r7p06plrq-datasheets-1472.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 16 Weeks | 60V | 66W Tc | N-Channel | 1990pF @ 30V | 6.7m Ω @ 23A, 10V | 2.5V @ 300μA | 46A Tc | 26nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK560P65Y,RQ | Toshiba Semiconductor and Storage | $1.13 |
Min: 1 Mult: 1 |
download | DTMOSV | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tk560p65yrq-datasheets-1568.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 16 Weeks | DPAK | 650V | 60W Tc | N-Channel | 380pF @ 300V | 560mOhm @ 3.5A, 10V | 4V @ 240μA | 7A Tc | 14.5nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK7S10N1Z,LQ | Toshiba Semiconductor and Storage | $1.22 |
Min: 1 Mult: 1 |
download | U-MOSVIII-H | Surface Mount | Surface Mount | 175°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2015 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tk7s10n1zlq-datasheets-2037.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12 Weeks | 3.949996g | 1 | Single | 7A | 10V | 100V | 50W Tc | N-Channel | 470pF @ 10V | 48m Ω @ 3.5A, 10V | 4V @ 100μA | 7A Ta | 7.1nC @ 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK380P65Y,RQ | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | DTMOSV | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tk380p65yrq-datasheets-2125.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 16 Weeks | DPAK | 650V | 80W Tc | N-Channel | 590pF @ 300V | 380mOhm @ 4.9A, 10V | 4V @ 360μA | 9.7A Tc | 20nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HDKCB16ZKA01T | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
SATA III | MQ01ABFxxx | 5°C ~ 55°C | 100.45mm x 69.85mm x 9.50mm | 3.26 oz (92.89 g) | 5V | 500GB | - | - | - | - | 2.5" | Toshiba Semiconductor and Storage | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TLP3407SRL(TP,E | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
TLP3407S | Surface Mount | 4-SMD (0.079", 2.00mm) | S-VSON4T | SMD (SMT) Tab | AC, DC | SPST-NO (1 Form A) | 1.2VDC | 0 V ~ 60 V | 1 A | 300 mOhms | Toshiba Semiconductor and Storage | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HDKGB13A2A01T | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
SATA III | MQ01ABDxxx | 5°C ~ 55°C | 100.45mm x 69.85mm x 9.50mm | 4.13 oz (117 g) | 5V | 1TB | Magnetic Disk (HDD) | - | - | - | 2.5" | Toshiba Semiconductor and Storage | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TLP3407SRA(TP,E | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
TLP3407S | Surface Mount | 4-SMD (0.079", 2.00mm) | S-VSON4T | SMD (SMT) Tab | AC, DC | SPST-NO (1 Form A) | 1.2VDC | 0 V ~ 60 V | 1 A | 300 mOhms | Toshiba Semiconductor and Storage | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TLP3475SRHA(TP,E | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
TLP3475S | Surface Mount | 4-SMD (0.079", 2.00mm) | S-VSON4T | SMD (SMT) Tab | AC, DC | SPST-NO (1 Form A) | 1.5VDC | 0 V ~ 60 V | 400 mA | 1.5 Ohms | Toshiba Semiconductor and Storage | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TLP3412SRHA(TP,E | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
TLP3412S | Surface Mount | 4-SMD (0.079", 2.00mm) | S-VSON4T | SMD (SMT) Tab | AC, DC | SPST-NO (1 Form A) | 1.5VDC | 0 V ~ 60 V | 400 mA | 1.5 Ohms | Toshiba Semiconductor and Storage | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TLP241B(TP1,F | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
TLP241B | Surface Mount | 4-SMD (0.300", 7.62mm) | 4-SMD | Toshiba Semiconductor and Storage | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CUZ20V,H3F | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
Zener | CUZ | Surface Mount | 150°C (TJ) | SC-76, SOD-323 | 29pF @ 1MHz | General Purpose | USC | No | 18.8V | 5A (8/20μs) | 30.5V (Typ) | 20V | 1 | 200W | Toshiba Semiconductor and Storage | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MUZ16V,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
Zener | MUZ | Surface Mount | 150°C (TJ) | SC-70, SOT-323 | 35pF @ 1MHz | General Purpose | USM | No | 15.3V | 5.5A (8/20μs) | 27V (Typ) | 16V | 1 | 200W | Toshiba Semiconductor and Storage | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CEZ30V,L3F | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
Zener | CEZ | Surface Mount | 150°C (TJ) | SC-79, SOD-523 | 21pF @ 1MHz | General Purpose | ESC | No | 28V | 4A (8/20μs) | 47.5V (Typ) | 30V | 1 | 200W | Toshiba Semiconductor and Storage | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TLP4590A(TP1,F | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
- | Surface Mount | 6-SMD, Gull Wing | - | Gull Wing | - | SPST-NC (1 Form B) | 1.27VDC | 0 V ~ 60 V | 1.2 A | 600 mOhms | Toshiba Semiconductor and Storage | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MUZ30V,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
Zener | MUZ | Surface Mount | 150°C (TJ) | SC-70, SOT-323 | 21pF @ 1MHz | General Purpose | USM | No | 28V | 4A (8/20μs) | 47.5V (Typ) | 30V | 1 | 200W | Toshiba Semiconductor and Storage | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MUZ6V8,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
Zener | MUZ | Surface Mount | 150°C (TJ) | SC-70, SOT-323 | 88pF @ 1MHz | General Purpose | USM | No | 6.4V | 10A (8/20μs) | 13V (Typ) | 6.8V | 1 | 180W | Toshiba Semiconductor and Storage | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CEZ6V2,L3F | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
Zener | CEZ | Surface Mount | 150°C (TJ) | SC-79, SOD-523 | 105pF @ 1MHz | General Purpose | ESC | No | 5.8V | 11A (8/20μs) | 10V (Typ) | 6.2V | 1 | 175W | Toshiba Semiconductor and Storage | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RN1911,LXHF(CT | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
- | Surface Mount | 6-TSSOP, SC-88, SOT-363 | US6 | 200mW | 50V | 100mA | 100nA (ICBO) | 2 NPN - Pre-Biased (Dual) | 120 @ 1mA, 5V | 250MHz | 300mV @ 250μA, 5mA | 10kOhms | - | Toshiba Semiconductor and Storage | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RN2316,LXHF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
- | Surface Mount | SC-70, SOT-323 | SC-70 | 100 mW | 50 V | 100 mA | 500nA | PNP - Pre-Biased | 50 @ 10mA, 5V | 200 MHz | 300mV @ 250μA, 5mA | 4.7 kOhms | 10 kOhms | Toshiba Semiconductor and Storage |
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