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ContactToshiba Semiconductor and Storage(13104)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Capacitance | Number of Terminations | Factory Lead Time | Weight | Resistance | Number of Pins | Pbfree Code | ECCN Code | Radiation Hardening | Reach Compliance Code | Number of Channels | Element Configuration | Power Dissipation | Number of Elements | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Power Dissipation-Max | JEDEC-95 Code | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| TK25E60X,S1X | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | DTMOSIV-H | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tk25e60xs1x-datasheets-2164.pdf | TO-220-3 | 16 Weeks | 25A | 600V | 180W Tc | N-Channel | 2400pF @ 300V | 125m Ω @ 7.5A, 10V | 3.5V @ 1.2mA | 25A Ta | 40nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| TK25N60X5,S1F | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | DTMOSIV-H | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2015 | /files/toshibasemiconductorandstorage-tk25n60x5s1f-datasheets-2233.pdf | TO-247-3 | 16 Weeks | TO-247 | 2.4nF | 25A | 600V | 180W Tc | N-Channel | 2400pF @ 300V | 140mOhm @ 7.5A, 10V | 4.5V @ 1.2mA | 25A Ta | 60nC @ 10V | 140 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||
| TK35A65W5,S5X | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | DTMOSIV | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tk35a65w5s5x-datasheets-2251.pdf | TO-220-3 Full Pack | 16 Weeks | 35A | 650V | 50W Tc | N-Channel | 4100pF @ 300V | 95m Ω @ 17.5A, 10V | 4.5V @ 2.1mA | 35A Ta | 115nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| TK31N60X,S1F | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | DTMOSIV-H | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | /files/toshibasemiconductorandstorage-tk31n60xs1f-datasheets-2330.pdf | TO-247-3 | 16 Weeks | 38.000013g | EAR99 | unknown | 1 | Single | 55 ns | 22ns | 6 ns | 130 ns | 30.8A | 30V | 600V | 230W Tc | N-Channel | 3000pF @ 300V | 88m Ω @ 9.4A, 10V | 3.5V @ 1.5mA | 30.8A Ta | 65nC @ 10V | Super Junction | 10V | ±30V | ||||||||||||||||||||||||||||
| TK31N60W,S1VF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | DTMOSIV | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tk31n60ws1vf-datasheets-2412.pdf | TO-247-3 | 3nF | 16 Weeks | 88mOhm | unknown | Single | 32ns | 8.5 ns | 165 ns | 30.8A | 30V | 230W Tc | 600V | N-Channel | 3000pF @ 300V | 88m Ω @ 15.4A, 10V | 3.7V @ 1.5mA | 30.8A Ta | 86nC @ 10V | Super Junction | 10V | ±30V | ||||||||||||||||||||||||||||||
| TK39A60W,S4VX | Toshiba Semiconductor and Storage | $23.74 |
Min: 1 Mult: 1 |
download | DTMOSIV | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tk39a60ws4vx-datasheets-2433.pdf | TO-220-3 Full Pack | 3 | 16 Weeks | 6.000006g | 3 | No | 1 | Single | 1 | 80 ns | 50ns | 9 ns | 200 ns | 38.8A | 30V | SILICON | ISOLATED | SWITCHING | 600V | 600V | 50W Tc | TO-220AB | 0.065Ohm | 608 mJ | N-Channel | 4100pF @ 300V | 65m Ω @ 19.4A, 10V | 3.7V @ 1.9mA | 38.8A Ta | 110nC @ 10V | 10V | ±30V | ||||||||||||||||||
| TK62N60W,S1VF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | DTMOSIV | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tk62n60ws1vf-datasheets-2457.pdf | TO-247-3 | 16 Weeks | Single | 58ns | 15 ns | 310 ns | 61.8A | 30V | 400W Tc | 600V | N-Channel | 6500pF @ 300V | 40m Ω @ 30.9A, 10V | 3.7V @ 3.1mA | 61.8A Ta | 180nC @ 10V | Super Junction | 10V | ±30V | |||||||||||||||||||||||||||||||||
| TK39N60W,S1VF | Toshiba Semiconductor and Storage | $4.43 |
Min: 1 Mult: 1 |
download | DTMOSIV | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tk39n60ws1vf-datasheets-2525.pdf | TO-247-3 | 4.1nF | 16 Weeks | 65mOhm | Single | TO-247 | 4.1nF | 50ns | 9 ns | 200 ns | 38.8A | 30V | 600V | 270W Tc | 55mOhm | N-Channel | 4100pF @ 300V | 65mOhm @ 19.4A, 10V | 3.7V @ 1.9mA | 38.8A Ta | 110nC @ 10V | Super Junction | 65 mΩ | 10V | ±30V | ||||||||||||||||||||||||
| TK40E10N1,S1X | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSVIII-H | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tk40e10n1s1x-datasheets-3052.pdf | TO-220-3 | 3nF | 12 Weeks | 90A | 100V | 126W Tc | N-Channel | 3000pF @ 50V | 8.2m Ω @ 20A, 10V | 4V @ 500μA | 90A Tc | 49nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| TK100A10N1,S4X | Toshiba Semiconductor and Storage | $3.37 |
Min: 1 Mult: 1 |
download | U-MOSVIII-H | Through Hole | Through Hole | 150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2014 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tk100a10n1s4x-datasheets-3075.pdf | TO-220-3 Full Pack | 3 | 12 Weeks | 6.000006g | 3 | yes | No | 1 | Single | 1 | 59 ns | 32ns | 45 ns | 140 ns | 100A | 20V | SILICON | ISOLATED | SWITCHING | 100V | 45W Tc | TO-220AB | 222 mJ | N-Channel | 8800pF @ 50V | 3.8m Ω @ 50A, 10V | 4V @ 1mA | 100A Tc | 140nC @ 10V | 10V | ±20V | |||||||||||||||||||
| TK12A50E,S5X | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tk12a50es5x-datasheets-3090.pdf | TO-220-3 Full Pack | 16 Weeks | 500V | 45W Tc | N-Channel | 1300pF @ 25V | 520m Ω @ 6A, 10V | 4V @ 1.2mA | 12A Ta | 40nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
| TK6A80E,S4X | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | π-MOSVIII | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | /files/toshibasemiconductorandstorage-tk6a80es4x-datasheets-3227.pdf | TO-220-3 Full Pack | 12 Weeks | 6.000006g | 1 | Single | 55 ns | 20ns | 15 ns | 85 ns | 6A | 30V | 800V | 45W Tc | N-Channel | 1350pF @ 25V | 1.7 Ω @ 3A, 10V | 4V @ 600μA | 6A Ta | 32nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||
| TK56A12N1,S4X | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSVIII-H | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | /files/toshibasemiconductorandstorage-tk56a12n1s4x-datasheets-3243.pdf | TO-220-3 Full Pack | 12 Weeks | 6.000006g | 3 | No | 1 | Single | TO-220SIS | 4.2nF | 45 ns | 20ns | 23 ns | 73 ns | 56A | 20V | 120V | 45W Tc | 6.2mOhm | N-Channel | 4200pF @ 60V | 7.5mOhm @ 28A, 10V | 4V @ 1mA | 56A Tc | 69nC @ 10V | 7.5 mΩ | 10V | ±20V | |||||||||||||||||||||||
| TK14E65W5,S1X | Toshiba Semiconductor and Storage | $2.49 |
Min: 1 Mult: 1 |
download | DTMOSIV | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tk14e65w5s1x-datasheets-3592.pdf | TO-220-3 | 16 Weeks | 13.7A | 650V | 130W Tc | N-Channel | 1300pF @ 300V | 300m Ω @ 6.9A, 10V | 4.5V @ 690μA | 13.7A Ta | 40nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| TK14A65W5,S5X | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | DTMOSIV | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tk14a65w5s5x-datasheets-3644.pdf | TO-220-3 Full Pack | 16 Weeks | 6.000006g | 3 | No | 1 | Single | TO-220SIS | 1.3nF | 90 ns | 40ns | 7 ns | 110 ns | 13.7A | 30V | 650V | 40W Tc | 250mOhm | N-Channel | 1300pF @ 300V | 300mOhm @ 6.9A, 10V | 4.5V @ 690μA | 13.7A Ta | 40nC @ 10V | 300 mΩ | 10V | ±30V | |||||||||||||||||||||||
| TK14N65W5,S1F | Toshiba Semiconductor and Storage | $15.05 |
Min: 1 Mult: 1 |
download | DTMOSIV | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tk14n65w5s1f-datasheets-3663.pdf | TO-247-3 | 16 Weeks | TO-247 | 1.3nF | 13.7A | 650V | 130W Tc | N-Channel | 1300pF @ 300V | 300mOhm @ 6.9A, 10V | 4.5V @ 690μA | 13.7A Ta | 40nC @ 10V | 300 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| TK28N65W,S1F | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | DTMOSIV | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tk28n65ws1f-datasheets-3681.pdf | TO-247-3 | 16 Weeks | TO-247 | 3nF | 27.6A | 650V | 230W Tc | N-Channel | 3000pF @ 300V | 110mOhm @ 13.8A, 10V | 3.5V @ 1.6mA | 27.6A Ta | 75nC @ 10V | 110 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||
| TK100A08N1,S4X | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSVIII-H | Through Hole | Through Hole | 150°C TJ | Tube | Not Applicable | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tk100a08n1s4x-datasheets-3721.pdf | TO-220-3 Full Pack | 12 Weeks | 6.000006g | 3 | No | 1 | Single | TO-220SIS | 9nF | 53 ns | 26ns | 46 ns | 140 ns | 100A | 20V | 80V | 45W Tc | 2.6mOhm | N-Channel | 9000pF @ 40V | 3.2mOhm @ 50A, 10V | 4V @ 1mA | 100A Tc | 130nC @ 10V | 3.2 mΩ | 10V | ±20V | |||||||||||||||||||||||
| TK14A65W,S5X | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | DTMOSIV | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | /files/toshibasemiconductorandstorage-tk14a65ws5x-datasheets-3817.pdf | TO-220-3 Full Pack | 16 Weeks | 6.000006g | 3 | No | 1 | Single | TO-220SIS | 1.3nF | 60 ns | 20ns | 7 ns | 110 ns | 13.7A | 30V | 650V | 40W Tc | 220mOhm | 650V | N-Channel | 1300pF @ 300V | 250mOhm @ 6.9A, 10V | 3.5V @ 690μA | 13.7A Ta | 35nC @ 10V | 250 mΩ | 10V | ±30V | ||||||||||||||||||||||
| TK4K1A60F,S4X | Toshiba Semiconductor and Storage | $0.98 |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tk4k1a60fs4x-datasheets-3916.pdf | 12 Weeks | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK35A65W,S5X | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | DTMOSIV | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tk35a65ws5x-datasheets-3918.pdf | TO-220-3 Full Pack | 16 Weeks | 6.000006g | 3 | No | 1 | Single | 70 ns | 30ns | 8 ns | 150 ns | 35A | 30V | 650V | 50W Tc | N-Channel | 4100pF @ 300V | 80m Ω @ 17.5A, 10V | 3.5V @ 2.1mA | 35A Ta | 100nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||
| TK62J60W,S1VQ | Toshiba Semiconductor and Storage | $7.85 |
Min: 1 Mult: 1 |
download | DTMOSIV | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tk62j60ws1vq-datasheets-3930.pdf | TO-3P-3, SC-65-3 | 16 Weeks | 3 | No | Single | 400W | 1 | TO-3P(N) | 6.5nF | 58ns | 15 ns | 310 ns | 61.8A | 30V | 600V | 400W Tc | 33mOhm | 600V | N-Channel | 6500pF @ 300V | 38mOhm @ 30.9A, 10V | 3.7V @ 3.1mA | 61.8A Ta | 180nC @ 10V | Super Junction | 38 mΩ | 10V | ±30V | |||||||||||||||||||||
| TK1K7A60F,S4X | Toshiba Semiconductor and Storage | $0.73 |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tk1k7a60fs4x-datasheets-3978.pdf | 12 Weeks | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK1K0A60F,S4X | Toshiba Semiconductor and Storage | $1.33 |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tk1k0a60fs4x-datasheets-4058.pdf | 12 Weeks | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK39J60W,S1VQ | Toshiba Semiconductor and Storage | $10.19 |
Min: 1 Mult: 1 |
download | DTMOSIV | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tk39j60ws1vq-datasheets-4097.pdf | TO-3P-3, SC-65-3 | 16 Weeks | 3 | No | Single | 270W | 1 | 38.8A | 30V | 270W Tc | 600V | N-Channel | 4100pF @ 300V | 65m Ω @ 19.4A, 10V | 3.7V @ 1.9mA | 38.8A Ta | 110nC @ 10V | Super Junction | 10V | ±30V | |||||||||||||||||||||||||||||||
| TK1K9A60F,S4X | Toshiba Semiconductor and Storage | $0.45 |
Min: 1 Mult: 1 |
download | U-MOSIX | Through Hole | 150°C | Tube | Not Applicable | MOSFET (Metal Oxide) | RoHS Compliant | 2017 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tk1k9a60fs4x-datasheets-4196.pdf | TO-220-3 Full Pack | 12 Weeks | 600V | 30W Tc | N-Channel | 490pF @ 300V | 1.9 Ω @ 1.9A, 10V | 4V @ 400μA | 3.7A Ta | 14nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| TK1K2A60F,S4X | Toshiba Semiconductor and Storage | $0.35 |
Min: 1 Mult: 1 |
download | U-MOSIX | Through Hole | 150°C | Tube | Not Applicable | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tk1k2a60fs4x-datasheets-4267.pdf | TO-220-3 Full Pack | 12 Weeks | 600V | 35W Tc | N-Channel | 740pF @ 300V | 1.2 Ω @ 3A, 10V | 4V @ 630μA | 6A Ta | 21nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| TK2K2A60F,S4X | Toshiba Semiconductor and Storage | $0.82 |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tk2k2a60fs4x-datasheets-4730.pdf | 12 Weeks | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK110A10PL,S4X | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tk110a10pls4x-datasheets-4923.pdf | 12 Weeks | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM3K16FU,LF | Toshiba Semiconductor and Storage | $0.34 |
Min: 1 Mult: 1 |
download | π-MOSVI | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm3k16fulf-datasheets-7326.pdf | SC-70, SOT-323 | 12 Weeks | unknown | 100mA | 20V | 150mW Ta | N-Channel | 9.3pF @ 3V | 3 Ω @ 10mA, 4V | 1.1V @ 100μA | 100mA Ta | 1.5V 4V | ±10V |
