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ContactIXYS / Littelfuse(10406)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Manufacturer Package Identifier | Reach Compliance Code | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Isolation Voltage | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Reverse Recovery Time | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IXTA3N50D2 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | /files/ixys-ixta3n50d2-datasheets-3561.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 24 Weeks | yes | UL RECOGNIZED | not_compliant | SINGLE | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 3A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | AMPLIFIER | 500V | 125W Tc | TO-263AA | N-Channel | 1070pF @ 25V | 1.5 Ω @ 1.5A, 0V | 3A Tc | 40nC @ 5V | Depletion Mode | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IXTP180N10T | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | TrenchMV™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/ixys-ixta180n10t-datasheets-2185.pdf | TO-220-3 | Lead Free | 3 | 24 Weeks | yes | EAR99 | AVALANCHE RATED, ULTRA LOW RESISTANCE | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 480W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 54ns | 31 ns | 42 ns | 180A | SILICON | DRAIN | SWITCHING | 480W Tc | TO-220AB | 450A | 0.0064Ohm | 750 mJ | 100V | N-Channel | 6900pF @ 25V | 6.4m Ω @ 25A, 10V | 4.5V @ 250μA | 180A Tc | 151nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| IXTP01N100D | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ROHS3 Compliant | 2001 | /files/ixys-ixty01n100d-datasheets-0137.pdf | 1kV | 4A | TO-220-3 | Lead Free | 3 | 8 Weeks | 3 | yes | EAR99 | No | e3 | PURE TIN | 3 | Single | 1.1W | 1 | FET General Purpose Power | 6ns | 30 ns | 100mA | 20V | SILICON | DRAIN | SWITCHING | 1000V | 1.1W Ta 25W Tc | TO-220AD | 1kV | N-Channel | 120pF @ 25V | 110 Ω @ 50mA, 0V | 100mA Tc | Depletion Mode | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IXFP16N50P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/ixys-ixfp16n50p-datasheets-3959.pdf | 500V | 16A | TO-220-3 | Lead Free | 3 | 26 Weeks | 400MOhm | 3 | yes | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | 3 | Single | 300W | 1 | FET General Purpose Power | 25ns | 22 ns | 70 ns | 16A | 30V | SILICON | DRAIN | SWITCHING | 300W Tc | TO-220AB | 750 mJ | 500V | N-Channel | 2250pF @ 25V | 400m Ω @ 8A, 10V | 5.5V @ 2.5mA | 16A Tc | 43nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||
| IXFH16N50P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/ixys-ixfp16n50p-datasheets-3959.pdf | 500V | 16A | TO-247-3 | 16.26mm | 21.46mm | 5.3mm | Lead Free | 3 | 30 Weeks | 3 | yes | AVALANCHE RATED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Single | 300W | 1 | FET General Purpose Power | 23 ns | 25ns | 22 ns | 70 ns | 16A | 30V | SILICON | DRAIN | SWITCHING | 300W Tc | 0.4Ohm | 750 mJ | 500V | N-Channel | 2250pF @ 25V | 400m Ω @ 8A, 10V | 5.5V @ 2.5mA | 16A Tc | 43nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||
| IXTH180N10T | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | TrenchMV™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/ixys-ixth180n10t-datasheets-4587.pdf | TO-247-3 | 3 | 8 Weeks | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 480W | 1 | Not Qualified | R-PSFM-T3 | 54ns | 31 ns | 42 ns | 180A | SILICON | DRAIN | SWITCHING | 480W Tc | TO-247AD | 450A | 0.0064Ohm | 750 mJ | 100V | N-Channel | 6900pF @ 25V | 6.4m Ω @ 25A, 10V | 4.5V @ 250μA | 180A Tc | 151nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| IXFH42N50P2 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarHV™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/ixys-ixfh42n50p2-datasheets-4676.pdf | TO-247-3 | Lead Free | 3 | 30 Weeks | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 830W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 42A | 30V | SILICON | DRAIN | SWITCHING | 830W Tc | 126A | 0.145Ohm | 1400 mJ | 500V | N-Channel | 5300pF @ 25V | 145m Ω @ 500mA, 10V | 4.5V @ 4mA | 42A Tc | 92nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| IXFH36N50P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarP2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/ixys-ixfh36n50p-datasheets-4795.pdf | 500V | 36A | TO-247-3 | 16.26mm | 21.46mm | 5.3mm | Lead Free | 3 | 5 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | No | 3 | Single | 540W | 1 | FET General Purpose Power | 25 ns | 27ns | 21 ns | 75 ns | 36A | 30V | SILICON | DRAIN | SWITCHING | 540W Tc | TO-247AD | 90A | 500V | N-Channel | 5500pF @ 25V | 170m Ω @ 500mA, 10V | 5V @ 4mA | 36A Tc | 93nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| IXFH24N50 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | /files/ixys-ixfh24n50-datasheets-4823.pdf | 500V | 24A | TO-247-3 | Lead Free | 3 | 8 Weeks | 6g | No SVHC | 230mOhm | 3 | yes | EAR99 | AVALANCHE RATED | No | 3 | Single | 300W | 1 | FET General Purpose Power | 33ns | 30 ns | 65 ns | 24A | 20V | 500V | SILICON | DRAIN | SWITCHING | 4V | 300W Tc | 250 ns | 250 ns | 96A | 500V | N-Channel | 4200pF @ 25V | 4 V | 230m Ω @ 12A, 10V | 4V @ 4mA | 24A Tc | 160nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| IXFH42N20 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | /files/ixys-ixfh50n20-datasheets-1852.pdf | 200V | 42A | TO-247-3 | 3 | 8 Weeks | 3 | yes | EAR99 | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 300W | 1 | FET General Purpose Power | Not Qualified | 15ns | 16 ns | 72 ns | 42A | 20V | SILICON | DRAIN | SWITCHING | 300W Tc | TO-247AD | 168A | 0.06Ohm | 200V | N-Channel | 4400pF @ 25V | 60m Ω @ 500mA, 10V | 4V @ 4mA | 42A Tc | 220nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IXFK180N25T | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | GigaMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/ixys-ixfk180n25t-datasheets-4968.pdf | TO-264-3, TO-264AA | Lead Free | 3 | 30 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | unknown | e1 | TIN SILVER COPPER | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | 180A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 250V | 250V | 1390W Tc | 500A | 0.0129Ohm | N-Channel | 28000pF @ 25V | 12.9m Ω @ 60A, 10V | 5V @ 8mA | 180A Tc | 345nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IXTH6N100D2 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | /files/ixys-ixth6n100d2-datasheets-5417.pdf | TO-247-3 | 3 | 24 Weeks | 3 | yes | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | 6A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1000V | 300W Tc | TO-247AD | N-Channel | 2650pF @ 25V | 2.2 Ω @ 3A, 0V | 6A Tc | 95nC @ 5V | Depletion Mode | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IXFA4N100Q | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | HiPerFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/ixys-ixfa4n100q-datasheets-0756.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 30 Weeks | 3Ohm | yes | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | GULL WING | 4 | Single | 150W | 1 | FET General Purpose Power | R-PSSO-G2 | 15ns | 18 ns | 32 ns | 4A | 20V | SILICON | DRAIN | SWITCHING | 1000V | 150W Tc | 4A | 700 mJ | 1kV | N-Channel | 1050pF @ 25V | 3 Ω @ 2A, 10V | 4.5V @ 1.5mA | 4A Tc | 39nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IXTH80N65X2 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | /files/ixys-ixth80n65x2-datasheets-5850.pdf | TO-247-3 | 25.66mm | 15 Weeks | EAR99 | IXTH80N65X2 | not_compliant | NOT SPECIFIED | 1 | NOT SPECIFIED | 890W | 150°C | 36 ns | 72 ns | 80A | 30V | 890W Tc | 650V | N-Channel | 7753pF @ 25V | 40m Ω @ 40A, 10V | 4.5V @ 4mA | 80A Tc | 144nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA64N10L2 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | Linear L2™ | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/ixys-ixta64n10l2-datasheets-1737.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.41mm | 4.83mm | 9.65mm | 28 Weeks | 1.946308g | not_compliant | e3 | Matte Tin (Sn) | 1 | 14 ns | 27ns | 11 ns | 38 ns | 64A | 20V | 100V | 357W Tc | N-Channel | 3620pF @ 25V | 32m Ω @ 500mA, 10V | 4.5V @ 250μA | 64A Tc | 100nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFK48N50 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | /files/ixys-ixfn48n50-datasheets-2171.pdf | 500V | 48A | TO-264-3, TO-264AA | 19.96mm | 26.16mm | 5.13mm | Lead Free | 3 | 20 Weeks | No SVHC | 100mOhm | 3 | yes | EAR99 | AVALANCHE RATED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Single | 500W | 1 | FET General Purpose Power | 30 ns | 60ns | 30 ns | 100 ns | 48A | 20V | 500V | SILICON | DRAIN | SWITCHING | 4V | 500W Tc | 500V | N-Channel | 8400pF @ 25V | 4 V | 100m Ω @ 24A, 10V | 4V @ 8mA | 48A Tc | 270nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| IXFK44N80P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/ixys-ixfk44n80p-datasheets-8213.pdf | TO-264-3, TO-264AA | Lead Free | 3 | 30 Weeks | No SVHC | 190MOhm | 3 | yes | EAR99 | AVALANCHE RATED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Single | 1.04kW | 1 | 22ns | 27 ns | 75 ns | 44A | 30V | SILICON | DRAIN | SWITCHING | 5V | 1040W Tc | 800V | N-Channel | 12000pF @ 25V | 190m Ω @ 22A, 10V | 5V @ 8mA | 44A Tc | 198nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| IXFN200N07 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | HiPerFET™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | Not Applicable | Screw | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/ixys-ixfn200n07-datasheets-8252.pdf | 70V | 200A | SOT-227-4, miniBLOC | Lead Free | 4 | 8 Weeks | 44g | No SVHC | 6mOhm | 3 | yes | EAR99 | AVALANCHE RATED | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 520W | 1 | FET General Purpose Power | Not Qualified | R-PUFM-X4 | 2.5kV | 60ns | 60 ns | 100 ns | 200A | 20V | 70V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 4V | 520W Tc | 250 ns | 600A | 2000 mJ | 70V | N-Channel | 9000pF @ 25V | 4 V | 6m Ω @ 500mA, 10V | 4V @ 8mA | 200A Tc | 480nC @ 10V | 10V | ±20V | |||||||||||||||||||||||
| IXTT48P20P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | PolarP™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/ixys-ixth48p20p-datasheets-1938.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 2 | 24 Weeks | 85MOhm | yes | EAR99 | AVALANCHE RATED | No | e3 | PURE TIN | GULL WING | 4 | Single | 462W | 1 | Other Transistors | R-PSSO-G2 | 46ns | 27 ns | 67 ns | 48A | 20V | SILICON | DRAIN | SWITCHING | 200V | 462W Tc | 2500 mJ | -200V | P-Channel | 5400pF @ 25V | 85m Ω @ 24A, 10V | 4.5V @ 250μA | 48A Tc | 103nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IXTN90N25L2 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | Linear L2™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/ixys-ixtn90n25l2-datasheets-8259.pdf | SOT-227-4, miniBLOC | Lead Free | 4 | 28 Weeks | 33MOhm | 4 | yes | EAR99 | AVALANCHE RATED, UL RECOGNIZED | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 735W | 1 | FET General Purpose Power | Not Qualified | 90A | 20V | SILICON | ISOLATED | SWITCHING | 735W Tc | 360A | 3000 mJ | 250V | N-Channel | 23000pF @ 25V | 33m Ω @ 500mA, 10V | 4.5V @ 3mA | 90A Tc | 640nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IXTA96P085T | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | TrenchP™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/ixys-ixth96p085t-datasheets-1752.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 28 Weeks | yes | EAR99 | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 298W | 1 | Other Transistors | Not Qualified | R-PSSO-G2 | 34ns | 22 ns | 45 ns | 96A | 15V | SILICON | DRAIN | SWITCHING | 85V | 298W Tc | 300A | -85V | P-Channel | 13100pF @ 25V | 13m Ω @ 48A, 10V | 4V @ 250μA | 96A Tc | 180nC @ 10V | 10V | ±15V | ||||||||||||||||||||||||||||||||||
| IXFN230N20T | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | GigaMOS™ | Chassis Mount | Chassis Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/ixys-ixfn230n20t-datasheets-8289.pdf | SOT-227-4, miniBLOC | Lead Free | 4 | 30 Weeks | yes | EAR99 | UL RECOGNIZED, AVALANCHE RATED | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PUFM-X4 | 220A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 200V | 200V | 1090W Tc | 630A | 0.0075Ohm | 3000 mJ | N-Channel | 28000pF @ 25V | 7.5m Ω @ 60A, 10V | 5V @ 8mA | 220A Tc | 378nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IXFN56N90P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | Polar™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/ixys-ixfn56n90p-datasheets-8305.pdf | SOT-227-4, miniBLOC | Lead Free | 4 | 35 Weeks | 135MOhm | 4 | yes | AVALANCHE RATED, UL RECOGNIZED | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 1kW | 1 | FET General Purpose Power | Not Qualified | 80ns | 38 ns | 93 ns | 56A | SILICON | ISOLATED | SWITCHING | 1000W Tc | 168A | 2000 mJ | 900V | N-Channel | 23000pF @ 25V | 135m Ω @ 28A, 10V | 6.5V @ 3mA | 56A Tc | 375nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||
| IXTP08N100D2 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | /files/ixys-ixtp08n100d2-datasheets-1351.pdf | TO-220-3 | Lead Free | 3 | 24 Weeks | 3 | yes | unknown | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 60W | 1 | FET General Purpose Power | Not Qualified | 800mA | 20V | SILICON | DRAIN | SWITCHING | 1000V | 60W Tc | TO-220AB | 1kV | N-Channel | 325pF @ 25V | 21 Ω @ 400mA, 0V | 800mA Tc | 14.6nC @ 5V | Depletion Mode | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IXTP08N50D2 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | /files/ixys-ixty08n50d2-datasheets-2799.pdf | TO-220-3 | Lead Free | 3 | 24 Weeks | 3 | yes | unknown | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 60W | 1 | FET General Purpose Power | Not Qualified | 800mA | 20V | SILICON | DRAIN | AMPLIFIER | 60W Tc | TO-220AB | 500V | N-Channel | 312pF @ 25V | 4.6 Ω @ 400mA, 0V | 800mA Tc | 12.7nC @ 5V | Depletion Mode | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IXTY1R6N100D2 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | /files/ixys-ixty1r6n100d2-datasheets-1843.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 24 Weeks | yes | Pure Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 1.6A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1000V | 100W Tc | TO-252AA | N-Channel | 645pF @ 25V | 10 Ω @ 800mA, 0V | 1.6A Tc | 27nC @ 5V | Depletion Mode | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IXTQ22N50P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | PolarHV™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/ixys-ixtq22n50p-datasheets-2023.pdf | 500V | 22A | TO-3P-3, SC-65-3 | Lead Free | 3 | 5 Weeks | 3 | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 350W | 1 | FET General Purpose Power | Not Qualified | 27ns | 21 ns | 75 ns | 22A | 30V | SILICON | DRAIN | SWITCHING | 350W Tc | 50A | 0.27Ohm | 750 mJ | 500V | N-Channel | 2630pF @ 25V | 270m Ω @ 11A, 10V | 5.5V @ 250μA | 22A Tc | 50nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| IXFH14N100Q2 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/ixys-ixfh14n100q2-datasheets-2029.pdf | TO-247-3 | 16.26mm | 21.46mm | 5.3mm | Lead Free | 3 | 8 Weeks | 6g | No SVHC | 900mOhm | 3 | yes | EAR99 | AVALANCHE RATED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Single | 500W | 1 | 12 ns | 10ns | 12 ns | 28 ns | 14A | 30V | 1kV | SILICON | DRAIN | SWITCHING | 1000V | 5V | 500W Tc | TO-247AD | 300 ns | 56A | 2500 mJ | 1kV | N-Channel | 2800pF @ 25V | 5 V | 950m Ω @ 7A, 10V | 5.5V @ 4mA | 14A Tc | 83nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||
| IXTH6N50D2 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | /files/ixys-ixta6n50d2-datasheets-1686.pdf | TO-247-3 | 3 | 24 Weeks | yes | UL RECOGNIZED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 6A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | AMPLIFIER | 500V | 300W Tc | 0.5Ohm | N-Channel | 2800pF @ 25V | 500m Ω @ 3A, 0V | 6A Tc | 96nC @ 5V | Depletion Mode | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IXTY08N100D2 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | /files/ixys-ixtp08n100d2-datasheets-1351.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 19 Weeks | 3 | yes | Pure Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 60W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 800mA | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1000V | 60W Tc | TO-252AA | N-Channel | 325pF @ 25V | 21 Ω @ 400mA, 0V | 800mA Tc | 14.6nC @ 5V | Depletion Mode | ±20V |
