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ContactIXYS / Littelfuse(10406)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Resistance | Number of Pins | Number of Drivers | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | Nominal Supply Current | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Output Voltage | Output Current | Isolation Voltage | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Number of Outputs | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IXTA06N120P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | PolarVHV™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/ixys-ixta06n120p-datasheets-0969.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 17 Weeks | yes | EAR99 | AVALANCHE RATED | unknown | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 42W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 24ns | 27 ns | 50 ns | 600mA | 20V | SILICON | DRAIN | SWITCHING | 1200V | 42W Tc | 0.6A | 1.2A | 34Ohm | 50 mJ | 1.2kV | N-Channel | 270pF @ 25V | 32 Ω @ 300mA, 10V | 4.5V @ 50μA | 600mA Tc | 13.3nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| IXTP26P20P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | PolarP™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/ixys-ixtp26p20p-datasheets-1592.pdf | TO-220-3 | Lead Free | 3 | 24 Weeks | 170MOhm | yes | EAR99 | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | 3 | Single | 300W | 1 | Other Transistors | R-PSFM-T3 | 33ns | 21 ns | 46 ns | 26A | 20V | SILICON | DRAIN | SWITCHING | 200V | 300W Tc | TO-220AB | 70A | -200V | P-Channel | 2740pF @ 25V | 170m Ω @ 13A, 10V | 4V @ 250μA | 26A Tc | 56nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IXFH60N50P3 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | HiPerFET™, Polar3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/ixys-ixfh60n50p3-datasheets-1724.pdf | TO-247-3 | 16.26mm | 21.46mm | 5.3mm | Lead Free | 3 | 30 Weeks | No SVHC | 3 | EAR99 | AVALANCHE RATED | No | 3 | Single | 1.04kW | 1 | FET General Purpose Power | 18 ns | 16ns | 8 ns | 37 ns | 60A | 30V | SILICON | DRAIN | SWITCHING | 5V | 1040W Tc | TO-247AD | 500V | N-Channel | 6250pF @ 25V | 100m Ω @ 30A, 10V | 5V @ 4mA | 60A Tc | 96nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| IXTH96P085T | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | TrenchP™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/ixys-ixth96p085t-datasheets-1752.pdf | TO-247-3 | 3 | 28 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Other Transistors | Not Qualified | 96A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 85V | 85V | 298W Tc | TO-247AD | 1000 mJ | P-Channel | 13100pF @ 25V | 13m Ω @ 500mA, 10V | 4V @ 250μA | 96A Tc | 180nC @ 10V | 10V | ±15V | ||||||||||||||||||||||||||||||||||||||||||
| IXFH50N20 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | /files/ixys-ixfh50n20-datasheets-1852.pdf | 200V | 50A | TO-247-3 | Lead Free | 3 | 8 Weeks | No SVHC | 45mOhm | 3 | yes | EAR99 | AVALANCHE RATED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Single | 300W | 1 | FET General Purpose Power | 15ns | 16 ns | 72 ns | 50A | 20V | 200V | SILICON | DRAIN | SWITCHING | 4V | 300W Tc | 200 ns | 200A | 200V | N-Channel | 4400pF @ 25V | 4 V | 45m Ω @ 25A, 10V | 4V @ 4mA | 50A Tc | 220nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| IXFH58N20 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | /files/ixys-ixfh50n20-datasheets-1852.pdf | 200V | 58A | TO-247-3 | Lead Free | 3 | 8 Weeks | No SVHC | 40mOhm | 3 | yes | EAR99 | AVALANCHE RATED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 260 | 3 | Single | 10 | 300W | 1 | FET General Purpose Power | 15ns | 16 ns | 72 ns | 58A | 20V | 200V | SILICON | DRAIN | SWITCHING | 4V | 300W Tc | 200 ns | 200V | N-Channel | 4400pF @ 25V | 4 V | 40m Ω @ 29A, 10V | 4V @ 4mA | 58A Tc | 220nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| IXFH80N65X2 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/ixys-ixfh80n65x2-datasheets-1959.pdf | TO-247-3 | 3 | 19 Weeks | EAR99 | AVALANCHE RATED | not_compliant | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | 80A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 650V | 650V | 890W Tc | 160A | 0.038Ohm | 3000 mJ | N-Channel | 8245pF @ 25V | 40m Ω @ 40A, 10V | 5.5V @ 4mA | 80A Tc | 143nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||
| IXTK180N15P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | PolarHT™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/ixys-ixtk180n15p-datasheets-2001.pdf | TO-264-3, TO-264AA | Lead Free | 3 | 28 Weeks | No SVHC | 10MOhm | 3 | yes | EAR99 | AVALANCHE RATED | unknown | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 800W | 1 | FET General Purpose Power | Not Qualified | 32ns | 36 ns | 150 ns | 180A | 20V | SILICON | DRAIN | SWITCHING | 150V | 5V | 800W Tc | 4000 mJ | 100V | N-Channel | 7000pF @ 25V | 10m Ω @ 90A, 10V | 5V @ 500μA | 180A Tc | 240nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IXFH15N80Q | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | /files/ixys-ixfh15n80q-datasheets-2059.pdf | 800V | 15A | TO-247-3 | Lead Free | 3 | 8 Weeks | 600mOhm | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 300W | 1 | FET General Purpose Power | Not Qualified | 27ns | 16 ns | 53 ns | 15A | 20V | SILICON | DRAIN | SWITCHING | 300W Tc | 250 ns | 60A | 1000 mJ | 800V | N-Channel | 4300pF @ 25V | 600m Ω @ 7.5A, 10V | 4.5V @ 4mA | 15A Tc | 90nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IXFK160N30T | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | GigaMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/ixys-ixfk160n30t-datasheets-3051.pdf | TO-264-3, TO-264AA | Lead Free | 3 | 30 Weeks | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 160A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 300V | 300V | 1390W Tc | 440A | 0.019Ohm | 3000 mJ | N-Channel | 28000pF @ 25V | 19m Ω @ 60A, 10V | 5V @ 8mA | 160A Tc | 335nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IXTT40N50L2 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | Linear L2™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/ixys-ixtt40n50l2-datasheets-3067.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 2 | 24 Weeks | No SVHC | 3 | yes | EAR99 | AVALANCHE RATED | unknown | e3 | PURE TIN | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 540W | 1 | FET General Purpose Powers | Not Qualified | R-PSSO-G2 | 40A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 500V | 500V | 2.5V | 540W Tc | 80A | 2000 mJ | N-Channel | 10400pF @ 25V | 2.5 V | 170m Ω @ 20A, 10V | 4.5V @ 250μA | 40A Tc | 320nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| IXFX48N50Q | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/ixys-ixfx48n50q-datasheets-2086.pdf | TO-247-3 | Lead Free | 3 | 10 Weeks | 100MOhm | 3 | yes | AVALANCHE RATED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Single | 500W | 1 | 22ns | 10 ns | 75 ns | 48A | 20V | SILICON | DRAIN | SWITCHING | 500W Tc | 2500 mJ | 500V | N-Channel | 7000pF @ 25V | 100m Ω @ 24A, 10V | 4V @ 4mA | 48A Tc | 190nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IXFK80N50P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/ixys-ixfk80n50p-datasheets-2108.pdf | 500V | 80A | TO-264-3, TO-264AA | Lead Free | 3 | 30 Weeks | 65MOhm | 3 | yes | AVALANCHE RATED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Single | 1.04kW | 1 | 27ns | 16 ns | 70 ns | 80A | 30V | SILICON | DRAIN | SWITCHING | 1040W Tc | 200A | 500V | N-Channel | 12700pF @ 25V | 65m Ω @ 40A, 10V | 5V @ 8mA | 80A Tc | 197nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| IXFR140N30P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarP2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/ixys-ixfr140n30p-datasheets-2110.pdf | ISOPLUS247™ | Lead Free | 3 | 30 Weeks | No SVHC | 3 | yes | EAR99 | AVALANCHE RATED, UL RECOGNIZED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Single | 300W | 1 | FET General Purpose Power | 2.5kV | 30ns | 20 ns | 100 ns | 82A | 20V | SILICON | ISOLATED | SWITCHING | 5V | 300W Tc | 70A | 0.026Ohm | 5000 mJ | 300V | N-Channel | 14800pF @ 25V | 26m Ω @ 70A, 10V | 5V @ 8mA | 70A Tc | 185nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IXTH30N60L2 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | Linear L2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/ixys-ixth30n60l2-datasheets-3094.pdf | TO-247-3 | 3 | 28 Weeks | No SVHC | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 540W | 1 | Not Qualified | 123 ns | 30A | SILICON | DRAIN | SWITCHING | 2.5V | 540W Tc | 80A | 0.24Ohm | 2000 mJ | 600V | N-Channel | 10700pF @ 25V | 2.5 V | 240m Ω @ 15A, 10V | 4.5V @ 250μA | 30A Tc | 335nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IXFN360N10T | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | HiPerFET™ | Chassis Mount, Screw | Chassis Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/ixys-ixfn360n10t-datasheets-3102.pdf | SOT-227-4, miniBLOC | Lead Free | 4 | 30 Weeks | 2.6MOhm | 4 | yes | EAR99 | AVALANCHE RATED, UL RECOGNIZED | No | NICKEL | UPPER | UNSPECIFIED | 4 | Single | 830W | 1 | FET General Purpose Power | 100ns | 160 ns | 80 ns | 360A | 20V | SILICON | ISOLATED | SWITCHING | 100V | 830W Tc | 900A | 2000 mJ | N-Channel | 36000pF @ 25V | 2.6m Ω @ 180A, 10V | 4.5V @ 250μA | 360A Tc | 505nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IXFN48N50 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | HiPerFET™ | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | /files/ixys-ixfn48n50-datasheets-2171.pdf | 500V | 48A | SOT-227-4, miniBLOC | Lead Free | 4 | 8 Weeks | No SVHC | 100mOhm | 3 | yes | EAR99 | AVALANCHE RATED | 8541.29.00.95 | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 520W | 1 | FET General Purpose Power | Not Qualified | R-PUFM-X4 | 60ns | 30 ns | 100 ns | 48A | 20V | 500V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 4V | 520W Tc | 192A | 500V | N-Channel | 8400pF @ 25V | 4 V | 100m Ω @ 500mA, 10V | 4V @ 8mA | 48A Tc | 270nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||
| IXFN180N25T | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | GigaMOS™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/ixys-ixfn180n25t-datasheets-2174.pdf | SOT-227-4, miniBLOC | Lead Free | 4 | 30 Weeks | yes | EAR99 | UL RECOGNIZED, AVALANCHE RATED | unknown | NICKEL | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PUFM-X4 | 168A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 250V | 250V | 900W Tc | 164A | 500A | 0.0129Ohm | 3000 mJ | N-Channel | 28000pF @ 25V | 12.9m Ω @ 60A, 10V | 5V @ 8mA | 168A Tc | 345nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IXTP96P085T | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | TrenchP™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/ixys-ixth96p085t-datasheets-1752.pdf | TO-220-3 | Lead Free | 3 | 24 Weeks | 3 | yes | AVALANCHE RATED | No | e3 | PURE TIN | 3 | Single | 298W | 1 | Other Transistors | 96A | 15V | SILICON | DRAIN | SWITCHING | 85V | 298W Tc | TO-220AB | -85V | P-Channel | 13100pF @ 25V | 13m Ω @ 48A, 10V | 4V @ 250μA | 96A Tc | 180nC @ 10V | 10V | ±15V | ||||||||||||||||||||||||||||||||||||||||||||
| IXTN660N04T4 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | TrenchT4™ | Chassis Mount | Chassis Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/ixys-ixtn660n04t4-datasheets-2193.pdf | SOT-227-4, miniBLOC | 28 Weeks | yes | unknown | 660A | 40V | 1040W Tc | N-Channel | 44000pF @ 25V | 0.85m Ω @ 100A, 10V | 4V @ 250μA | 660A Tc | 860nC @ 10V | Current Sensing | 10V | ±15V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTH160N10T | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | TrenchMV™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/ixys-ixth160n10t-datasheets-2198.pdf | TO-247-3 | Lead Free | 3 | 8 Weeks | 7MOhm | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 430W | 1 | FET General Purpose Powers | Not Qualified | R-PSFM-T3 | 61ns | 42 ns | 49 ns | 160A | SILICON | DRAIN | SWITCHING | 430W Tc | TO-247AD | 430A | 500 mJ | 100V | N-Channel | 6600pF @ 25V | 7m Ω @ 25A, 10V | 4.5V @ 250μA | 160A Tc | 132nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| IXFK360N15T2 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | GigaMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/ixys-ixfk360n15t2-datasheets-3138.pdf | TO-264-3, TO-264AA | Lead Free | 3 | 30 Weeks | 1 | yes | EAR99 | AVALANCHE RATED | 100A | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 150V | 360A | 50 ns | 170ns | 265 ns | 115 ns | 360A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1670W Tc | 900A | 0.004Ohm | N-Channel | 47500pF @ 25V | 4m Ω @ 60A, 10V | 5V @ 8mA | 360A Tc | 715nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IXFN360N15T2 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | GigaMOS™ | Chassis Mount | Chassis Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/ixys-ixfn360n15t2-datasheets-2203.pdf | SOT-227-4, miniBLOC | Lead Free | 4 | 30 Weeks | 4mOhm | yes | EAR99 | UL RECOGNIZED, AVALANCHE RATED | unknown | 100A | NICKEL | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PUFM-X4 | 150V | 310A | 50 ns | 170ns | 265 ns | 115 ns | 310A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 1 | 1070W Tc | 900A | N-Channel | 47500pF @ 25V | 4m Ω @ 60A, 10V | 5V @ 8mA | 310A Tc | 715nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IXFK230N20T | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | GigaMOS™ | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/ixys-ixfk230n20t-datasheets-3147.pdf | TO-264-3, TO-264AA | Lead Free | 3 | 20 Weeks | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 1.67kW | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 230A | 20V | DRAIN | SWITCHING | 1670W Tc | 630A | 0.0075Ohm | 3000 mJ | 200V | N-Channel | 28000pF @ 25V | 7.5m Ω @ 60A, 10V | 5V @ 8mA | 230A Tc | 378nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IXTN600N04T2 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | GigaMOS™, TrenchT2™ | Chassis Mount, Screw | Chassis Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/ixys-ixtn600n04t2-datasheets-2276.pdf | SOT-227-4, miniBLOC | Lead Free | 4 | 28 Weeks | 4 | yes | EAR99 | UL RECOGNIZED, AVALANCHE RATED | No | 200A | NICKEL | UPPER | UNSPECIFIED | 4 | 940W | 1 | FET General Purpose Power | 40V | 600A | 40 ns | 20ns | 250 ns | 90 ns | 600A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 1 | 940W Tc | 3000 mJ | N-Channel | 40000pF @ 25V | 1.05m Ω @ 100A, 10V | 3.5V @ 250μA | 600A Tc | 590nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IXTK200N10L2 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | Linear L2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/ixys-ixtk200n10l2-datasheets-3182.pdf | TO-264-3, TO-264AA | Lead Free | 3 | 28 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | unknown | e1 | TIN SILVER COPPER | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | 200A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 1040W Tc | 500A | 0.011Ohm | 5000 mJ | N-Channel | 23000pF @ 25V | 11m Ω @ 100A, 10V | 4.5V @ 3mA | 200A Tc | 540nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IXTT02N450HV | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/ixys-ixtt02n450hv-datasheets-3204.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 2 | 24 Weeks | not_compliant | e3 | Matte Tin (Sn) | GULL WING | Single | 113W | 1 | FET General Purpose Power | R-PSSO-G2 | 48ns | 143 ns | 28 ns | 200mA | 20V | SILICON | DRAIN | SWITCHING | 4500V | 113W Tc | 0.2A | 0.6A | 625Ohm | 4.5kV | N-Channel | 256pF @ 25V | 750 Ω @ 10mA, 10V | 6.5V @ 250μA | 200mA Tc | 10.4nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IXTK90N25L2 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | Linear L2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/ixys-ixtk90n25l2-datasheets-3207.pdf | TO-264-3, TO-264AA | Lead Free | 3 | 28 Weeks | No SVHC | 33MOhm | 3 | yes | EAR99 | AVALANCHE RATED | unknown | e1 | TIN SILVER COPPER | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 960W | 1 | FET General Purpose Power | Not Qualified | 90A | 20V | SILICON | DRAIN | SWITCHING | 2V | 960W Tc | 250V | N-Channel | 23000pF @ 25V | 2 V | 33m Ω @ 45A, 10V | 4.5V @ 3mA | 90A Tc | 640nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IXFN110N60P3 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | HiPerFET™, Polar3™ | Chassis Mount, Panel, Screw | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/ixys-ixfn110n60p3-datasheets-2684.pdf | SOT-227-4, miniBLOC | 38.23mm | 9.6mm | 25.07mm | Lead Free | 4 | 30 Weeks | 4 | AVALANCHE RATED, UL RECOGNIZED | unknown | UPPER | UNSPECIFIED | 4 | Single | 1.5kW | 1 | FET General Purpose Power | Not Qualified | 63 ns | 19ns | 11 ns | 77 ns | 90A | 30V | SILICON | ISOLATED | SWITCHING | 1500W Tc | 275A | 0.056Ohm | 3000 mJ | 600V | N-Channel | 18000pF @ 25V | 56m Ω @ 55A, 10V | 5V @ 8mA | 90A Tc | 245nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||
| IXFN160N30T | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | GigaMOS™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/ixys-ixfn160n30t-datasheets-3324.pdf | SOT-227-4, miniBLOC | Lead Free | 4 | 30 Weeks | yes | EAR99 | AVALANCHE RATED, UL RECOGNIZED | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PUFM-X4 | 130A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 300V | 300V | 900W Tc | 440A | 0.019Ohm | 3000 mJ | N-Channel | 28000pF @ 25V | 19m Ω @ 60A, 10V | 5V @ 8mA | 130A Tc | 335nC @ 10V | 10V | ±20V |
