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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Technology | Operating Mode | Height Seated (Max) | RoHS Status | Published | Datasheet | Package / Case | Length | Width | Operating Supply Voltage | Lead Free | Number of Terminations | Factory Lead Time | Number of Pins | Interface | Density | Pbfree Code | Number of Ports | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Surface Mount | Voltage - Supply | Terminal Position | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Base Part Number | Pin Count | Supply Voltage-Max (Vsup) | Supply Voltage-Min (Vsup) | Time@Peak Reflow Temperature-Max (s) | Power Supplies | Supply Current-Max | Qualification Status | JESD-30 Code | Supplier Device Package | Memory Size | Memory Type | Data Bus Width | Output Characteristics | Access Time | Programming Voltage | Clock Frequency | Address Bus Width | Memory Format | Memory Interface | Organization | Memory Width | Write Cycle Time - Word, Page | Memory Density | Alternate Memory Width | Standby Current-Max | Word Size | Serial Bus Type | Endurance | Write Cycle Time-Max (tWC) | Data Retention Time-Min | Write Protection | Access Time (Max) | Sync/Async | I/O Type | Standby Voltage-Min | Memory IC Type |
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| IS61LPD51236A-200TQI | ISSI, Integrated Silicon Solution Inc |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~85°C TA | Tray | 2 (1 Year) | SRAM - Synchronous, SDR | 1.6mm | Non-RoHS Compliant | 100-LQFP | 20mm | 14mm | 100 | 100 | no | 3A991.B.2.A | PIPELINED ARCHITECTURE | 8542.32.00.41 | 1 | e0 | Tin/Lead (Sn/Pb) | YES | 3.135V~3.465V | QUAD | 240 | 3.3V | 0.65mm | 100 | 3.465V | 3.135V | 30 | 2.5/3.33.3V | 0.475mA | Not Qualified | 18Mb 512K x 36 | Volatile | 3-STATE | 3.1ns | 200MHz | SRAM | Parallel | 512KX36 | 36 | 18874368 bit | 0.075A | COMMON | 3.14V | |||||||||||||||||||||||||||||||||||
| 71256S55DB | Renesas Electronics America Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~125°C TA | Tube | 1 (Unlimited) | SRAM - Asynchronous | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/renesaselectronicsamericainc-71256l45db-datasheets-7653.pdf | 28-CDIP (0.600, 15.24mm) | 15 Weeks | 4.5V~5.5V | 28-CerDip | 256Kb 32K x 8 | Volatile | 55ns | SRAM | Parallel | 55ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MTFC16GAKAEDQ-AAT TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 3 (168 Hours) | ROHS3 Compliant | 100-LBGA | 5 Weeks | 2.7V | FLASH CARD | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MT61K512M32KPA-14:B TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 0°C~95°C TC | Tape & Reel (TR) | 3 (168 Hours) | SGRAM - GDDR6 | ROHS3 Compliant | 180-TFBGA | 1.31V~1.391V | 16Gb 512M x 32 | Volatile | 7GHz | DRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MT53D512M32D2DS-053 WT:D TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -30°C~85°C TC | Tape & Reel (TR) | 3 (168 Hours) | SDRAM - Mobile LPDDR4 | ROHS3 Compliant | 200-WFBGA | 1.1V | 16Gb 512M x 32 | Volatile | 1866MHz | DRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 71256L85DB | Renesas Electronics America Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~125°C TA | Tube | 1 (Unlimited) | SRAM - Asynchronous | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/renesaselectronicsamericainc-71256l45db-datasheets-7653.pdf | 28-CDIP (0.600, 15.24mm) | 15 Weeks | 4.5V~5.5V | 28-CerDip | 256Kb 32K x 8 | Volatile | 85ns | SRAM | Parallel | 85ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MT53D256M64D4KA-046 XT:B TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | -30°C~105°C TC | Tape & Reel (TR) | 3 (168 Hours) | SDRAM - Mobile LPDDR4 | ROHS3 Compliant | 1.1V | 16Gb 256M x 64 | Volatile | 2133MHz | DRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 71256S45DB | Renesas Electronics America Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~125°C TA | Tube | 1 (Unlimited) | SRAM - Asynchronous | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/renesaselectronicsamericainc-71256l45db-datasheets-7653.pdf | 28-CDIP (0.600, 15.24mm) | 15 Weeks | 4.5V~5.5V | 28-CerDip | 256Kb 32K x 8 | Volatile | 45ns | SRAM | Parallel | 45ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MT53B256M64D2PX-062 XT:C TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | -30°C~105°C TC | Tape & Reel (TR) | 3 (168 Hours) | SDRAM - Mobile LPDDR4 | ROHS3 Compliant | 1.1V | 16Gb 256M x 64 | Volatile | 1600MHz | DRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 71256S25DB | Renesas Electronics America Inc. | $38.61 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~125°C TA | Tube | 1 (Unlimited) | SRAM - Asynchronous | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/renesaselectronicsamericainc-71256l45db-datasheets-7653.pdf | 28-CDIP (0.600, 15.24mm) | 15 Weeks | 4.5V~5.5V | 28-CerDip | 256Kb 32K x 8 | Volatile | 25ns | SRAM | Parallel | 25ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MT29F512G08EBHAFJ4-3ITF:A TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 6 Weeks | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MTFC32GAPALBH-IT | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | e•MMC™ | Surface Mount | -40°C~85°C TA | Tray | 3 (168 Hours) | FLASH - NAND | ROHS3 Compliant | 153-TFBGA | 2.7V~3.6V | 256Gb 32G x 8 | Non-Volatile | FLASH | MMC | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MT53D256M64D4NY-046 XT:B TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | -30°C~105°C TC | Tape & Reel (TR) | 3 (168 Hours) | SDRAM - Mobile LPDDR4 | ROHS3 Compliant | 1.1V | 16Gb 256M x 64 | Volatile | 2133MHz | DRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CY7C1312KV18-250BZXCT | Cypress Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 0°C~70°C TA | Tape & Reel (TR) | 3 (168 Hours) | SRAM - Synchronous, QDR II | 1.4mm | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/cypresssemiconductor-cy7c1312kv18250bzxct-datasheets-8532.pdf | 165-LBGA | 15mm | 1.8V | 165 | 13 Weeks | 165 | 18 Mb | yes | 2 | PIPELINED ARCHITECTURE | No | 1 | 560mA | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 1.7V~1.9V | BOTTOM | 260 | 1.8V | 1mm | CY7C1312 | 1.9V | 1.7V | 30 | 18Mb 1M x 18 | Volatile | 3-STATE | 450 ps | 250MHz | 19b | SRAM | Parallel | 1MX18 | 18 | 18b | Synchronous | SEPARATE | 1.7V | ||||||||||||||||||||||||||||||||
| MTFC32GAPALBH-IT TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | e•MMC™ | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 3 (168 Hours) | FLASH - NAND | ROHS3 Compliant | 153-TFBGA | 8 Weeks | 2.7V~3.6V | 256Gb 32G x 8 | Non-Volatile | FLASH | MMC | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 25LC256-M/MF | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~125°C TA | Tube | 1 (Unlimited) | CMOS | 1mm | ROHS3 Compliant | 2013 | 8-VDFN Exposed Pad | 6mm | 5mm | 8 | 5 Weeks | 8 | SPI, Serial | 256 kb | No | 1 | e3 | Matte Tin (Sn) | YES | 2.5V~5.5V | DUAL | 260 | 5V | 1.27mm | 25LC256 | 5.5V | 2.5V | 40 | 2/5V | 0.006mA | 256Kb 32K x 8 | Non-Volatile | 160 ns | 10MHz | EEPROM | SPI | 8 | 5ms | 0.000001A | SPI | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE/SOFTWARE | ||||||||||||||||||||||||||||||||||
| MT61K512M32KPA-16:B | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 0°C~95°C TC | Tray | 3 (168 Hours) | SGRAM - GDDR6 | ROHS3 Compliant | 180-TFBGA | 1.31V~1.391V | 16Gb 512M x 32 | Volatile | 8GHz | DRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 71V65803S150BGI | Renesas Electronics America Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~85°C TA | Tray | 3 (168 Hours) | SRAM - Synchronous, SDR (ZBT) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/renesaselectronicsamericainc-71v65603s100pfg-datasheets-7114.pdf | 119-BGA | 13 Weeks | 3.135V~3.465V | IDT71V65803 | 119-PBGA (14x22) | 9Mb 512K x 18 | Volatile | 3.8ns | 150MHz | SRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 71V67603S166BQG | Renesas Electronics America Inc. | $34.60 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 0°C~70°C TA | Tray | 3 (168 Hours) | SRAM - Synchronous, SDR | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/renesaselectronicsamericainc-71v67603s133bqgi8-datasheets-2259.pdf | 165-TBGA | 13 Weeks | 3.135V~3.465V | IDT71V67603 | 9Mb 256K x 36 | Volatile | 3.5ns | 166MHz | SRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| S70GL02GT12FHAV13 | Cypress Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q100, GL-T | Surface Mount | -40°C~105°C TA | Tape & Reel (TR) | 3 (168 Hours) | FLASH - NOR | ASYNCHRONOUS | 1.4mm | ROHS3 Compliant | 64-LBGA | 13mm | 11mm | 64 | 13 Weeks | 8542.32.00.51 | 1 | YES | 1.65V~3.6V | BOTTOM | NOT SPECIFIED | 3V | 1mm | 3.6V | 2.7V | NOT SPECIFIED | R-PBGA-B64 | 2Gb 256M x 8 128M x 16 | Non-Volatile | 120ns | 3V | FLASH | Parallel | 128MX16 | 16 | 2147483648 bit | 8 | ||||||||||||||||||||||||||||||||||||||||||||
| MTFC16GAKAEDQ-AAT | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | e•MMC™ | Surface Mount | -40°C~105°C TA | Tray | FLASH - NAND | 100-LBGA | compliant | 128Gb 16G x 8 | Non-Volatile | 2.7V | FLASH | MMC | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CY62177EV18LL-70BAXIT | Cypress Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MoBL® | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 3 (168 Hours) | SRAM - Asynchronous | ROHS3 Compliant | 2001 | https://pdf.utmel.com/r/datasheets/cypresssemiconductorcorp-cy62177ev18ll70baxi-datasheets-8452.pdf | 48-TFBGA | 1.8V | 48 | 13 Weeks | 48 | 32 Mb | 1 | No | YES | 1.65V~2.25V | BOTTOM | 1.8V | 0.75mm | 0.045mA | 32Mb 4M x 8 2M x 16 | Volatile | 3-STATE | 21b | SRAM | Parallel | 16 | 70ns | 70 ns | COMMON | 1V | ||||||||||||||||||||||||||||||||||||||||||||||
| EM-10 8GB I-GRADE | Swissbit |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | EM-10 | Surface Mount | -40°C~105°C | Bulk | Not Applicable | FLASH - NAND (MLC) | ROHS3 Compliant | 153-VFBGA | 6 Weeks | 2.7V~3.6V | 153-BGA (11.5x13) | 8GB | Non-Volatile | 52MHz | FLASH | eMMC | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CY7C1381KVE33-133AXIT | Cypress Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 3 (168 Hours) | SRAM - Synchronous, SDR | ROHS3 Compliant | 100-LQFP | 6 Weeks | 3.135V~3.6V | 100-TQFP (14x20) | 18Mb 512K x 36 | Volatile | 6.5ns | 133MHz | SRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CY7C1320KV18-250BZCT | Cypress Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 0°C~70°C TA | Tape & Reel (TR) | 3 (168 Hours) | SRAM - Synchronous, DDR II | Non-RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/cypresssemiconductorcorp-cy7c1320kv18333bzxc-datasheets-4546.pdf | 165-LBGA | 1.8V | 165 | 6 Weeks | 165 | 18 Mb | no | 1 | PIPELINED ARCHITECTURE | No | 1 | e0 | Tin/Lead (Sn/Pb) | YES | 1.7V~1.9V | BOTTOM | 235 | 1.8V | CY7C1320 | 20 | 0.46mA | 18Mb 512K x 36 | Volatile | 3-STATE | 450 ps | 250MHz | 19b | SRAM | Parallel | 36 | 0.25A | COMMON | ||||||||||||||||||||||||||||||||||||||||
| IS61WV102416ALL-20TLI | ISSI, Integrated Silicon Solution Inc |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~85°C TA | Tube | 3 (168 Hours) | SRAM - Asynchronous | ROHS3 Compliant | 48-TFSOP (0.724, 18.40mm Width) | 1.8V | 48 | 8 Weeks | 48 | 16 Mb | yes | 1 | No | 1 | 60mA | e3 | Matte Tin (Sn) - annealed | YES | 1.65V~2.2V | DUAL | 260 | 0.5mm | 48 | 2.2V | 40 | 16Mb 1M x 16 | Volatile | 3-STATE | 20b | SRAM | Parallel | 16 | 20ns | 0.02A | 16b | 20 ns | Asynchronous | COMMON | ||||||||||||||||||||||||||||||||||||||||
| MT29F512G08EECAGJ4-5M:A | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Box | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FM28V202A-TGTR | Cypress Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | F-RAM™ | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 3 (168 Hours) | FRAM (Ferroelectric RAM) | ASYNCHRONOUS | 1.194mm | ROHS3 Compliant | 2009 | 44-TSOP (0.400, 10.16mm Width) | 18.415mm | 3.3V | Lead Free | 44 | 13 Weeks | 44 | 2 Mb | EAR99 | Tin | 8542.32.00.71 | 1 | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | 2V~3.6V | DUAL | 260 | 3.3V | 0.8mm | 3.6V | 2V | 30 | 2Mb 128K x 16 | Non-Volatile | 16b | FRAM | Parallel | 128KX16 | 16 | 90ns | |||||||||||||||||||||||||||||||||||||||
| MTFC16GAKAEEF-AAT | Micron Technology Inc. | $24.14 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | e•MMC™ | Surface Mount | -40°C~105°C TA | Tray | 3 (168 Hours) | FLASH - NAND | ROHS3 Compliant | 169-TFBGA | 128Gb 16G x 8 | Non-Volatile | 2.7V | FLASH | MMC | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 25LC256T-M/MF | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~125°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 1mm | ROHS3 Compliant | 2013 | 8-VDFN Exposed Pad | 6mm | 5mm | 8 | 5 Weeks | 8 | SPI, Serial | 256 kb | IT ALSO OPERATES AT FREQUENCY 5 MHZ AT SUPPLY VOLTAGE 2.5 TO 4.5 V | No | 1 | e3 | Matte Tin (Sn) | YES | 2.5V~5.5V | DUAL | 260 | 5V | 1.27mm | 25LC256 | 5.5V | 4.5V | 40 | 2/5V | 0.006mA | 256Kb 32K x 8 | Non-Volatile | 160 ns | 10MHz | EEPROM | SPI | 8 | 5ms | 0.000001A | SPI | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE/SOFTWARE |
