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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Technology | Frequency | Operating Mode | Height Seated (Max) | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Operating Supply Voltage | Lead Free | Number of Terminations | Factory Lead Time | Number of Pins | Interface | Density | Pbfree Code | Number of Ports | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Max Frequency | Reach Compliance Code | HTS Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Surface Mount | Voltage - Supply | Terminal Position | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Base Part Number | Pin Count | Supply Voltage-Max (Vsup) | Supply Voltage-Min (Vsup) | Time@Peak Reflow Temperature-Max (s) | Subcategory | Power Supplies | Supply Current-Max | Qualification Status | JESD-30 Code | Supplier Device Package | Screening Level | Memory Size | Memory Type | Data Bus Width | Output Characteristics | Access Time | Programming Voltage | Clock Frequency | Address Bus Width | Memory Format | Memory Interface | Organization | Memory Width | Write Cycle Time - Word, Page | Memory Density | Alternate Memory Width | Standby Current-Max | Word Size | Serial Bus Type | Endurance | Write Cycle Time-Max (tWC) | Data Retention Time-Min | Write Protection | Access Time (Max) | Sync/Async | I/O Type | Standby Voltage-Min | Memory IC Type |
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| 25LC256-M/MF | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~125°C TA | Tube | 1 (Unlimited) | CMOS | 1mm | ROHS3 Compliant | 2013 | 8-VDFN Exposed Pad | 6mm | 5mm | 8 | 5 Weeks | 8 | SPI, Serial | 256 kb | No | 1 | e3 | Matte Tin (Sn) | YES | 2.5V~5.5V | DUAL | 260 | 5V | 1.27mm | 25LC256 | 5.5V | 2.5V | 40 | 2/5V | 0.006mA | 256Kb 32K x 8 | Non-Volatile | 160 ns | 10MHz | EEPROM | SPI | 8 | 5ms | 0.000001A | SPI | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE/SOFTWARE | |||||||||||||||||||||||||||||||||||||||
| MT61K512M32KPA-16:B | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 0°C~95°C TC | Tray | 3 (168 Hours) | SGRAM - GDDR6 | ROHS3 Compliant | 180-TFBGA | 1.31V~1.391V | 16Gb 512M x 32 | Volatile | 8GHz | DRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MT29F32G08ABCABH1-10Z:A TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 0°C~70°C TA | Tape & Reel (TR) | 3 (168 Hours) | FLASH - NAND | ROHS3 Compliant | 100-VFBGA | 5 Weeks | 2.7V~3.6V | MT29F32G08 | 32Gb 4G x 8 | Non-Volatile | 100MHz | FLASH | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CY7C006A-20JC | Cypress Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 0°C~70°C TA | Tube | 3 (168 Hours) | SRAM - Dual Port, Asynchronous | 20GHz | Non-RoHS Compliant | 2001 | /files/cypresssemiconductorcorp-cy7c006a20jc-datasheets-0974.pdf | 68-LCC (J-Lead) | 24.33mm | 50.8mm | 24.3332mm | 5V | Contains Lead | 68 | 68 | 128 kb | 2 | EAR99 | not_compliant | 1 | e0 | TIN LEAD | 4.5V~5.5V | QUAD | 225 | 5V | CY7C006 | 68 | 30 | 5V | Not Qualified | 128Kb 16K x 8 | Volatile | 3-STATE | 14b | SRAM | Parallel | 16KX8 | 20ns | 0.0005A | COMMON | |||||||||||||||||||||||||||||||||||||||||
| 71256L35DB | Renesas Electronics America Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~125°C TA | Tube | 1 (Unlimited) | SRAM - Asynchronous | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/renesaselectronicsamericainc-71256l45db-datasheets-7653.pdf | 28-CDIP (0.600, 15.24mm) | 15 Weeks | 4.5V~5.5V | 28-CerDip | 256Kb 32K x 8 | Volatile | 35ns | SRAM | Parallel | 35ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 71256S70DB | Renesas Electronics America Inc. | $198.88 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~125°C TA | Tube | 1 (Unlimited) | SRAM - Asynchronous | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/renesaselectronicsamericainc-71256l45db-datasheets-7653.pdf | 28-CDIP (0.600, 15.24mm) | 15 Weeks | 4.5V~5.5V | 28-CerDip | 256Kb 32K x 8 | Volatile | 70ns | SRAM | Parallel | 70ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 71256L25DB | Renesas Electronics America Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~125°C TA | Tube | 1 (Unlimited) | SRAM - Asynchronous | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/renesaselectronicsamericainc-71256l45db-datasheets-7653.pdf | 28-CDIP (0.600, 15.24mm) | 15 Weeks | 4.5V~5.5V | 28-CerDip | 256Kb 32K x 8 | Volatile | 25ns | SRAM | Parallel | 25ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MT52L256M64D2QA-125 XT:B | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Bulk | 3 (168 Hours) | SDRAM - Mobile LPDDR3 | ROHS3 Compliant | 1.2V | 16Gb 256M x 64 | Volatile | 800MHz | DRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 71256L55DB | Renesas Electronics America Inc. | $142.54 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~125°C TA | Tube | 1 (Unlimited) | SRAM - Asynchronous | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/renesaselectronicsamericainc-71256l45db-datasheets-7653.pdf | 28-CDIP (0.600, 15.24mm) | 15 Weeks | 4.5V~5.5V | 28-CerDip | 256Kb 32K x 8 | Volatile | 55ns | SRAM | Parallel | 55ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 71256L100DB | Renesas Electronics America Inc. | $222.13 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~125°C TA | Tube | 1 (Unlimited) | SRAM - Asynchronous | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/renesaselectronicsamericainc-71256l45db-datasheets-7653.pdf | 28-CDIP (0.600, 15.24mm) | 15 Weeks | 4.5V~5.5V | 28-CerDip | 256Kb 32K x 8 | Volatile | 100ns | SRAM | Parallel | 100ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 71256S85DB | Renesas Electronics America Inc. | $36.15 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~125°C TA | Tube | 1 (Unlimited) | SRAM - Asynchronous | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/renesaselectronicsamericainc-71256l45db-datasheets-7653.pdf | 28-CDIP (0.600, 15.24mm) | 15 Weeks | 4.5V~5.5V | 28-CerDip | 256Kb 32K x 8 | Volatile | 85ns | SRAM | Parallel | 85ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 5962-8855204XA | Renesas Electronics America Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~125°C TA | Tube | 1 (Unlimited) | SRAM - Asynchronous | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/renesaselectronicsamericainc-71256l45db-datasheets-7653.pdf | 28-CDIP (0.600, 15.24mm) | 11 Weeks | 4.5V~5.5V | 28-CerDip | 256Kb 32K x 8 | Volatile | SRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IS61LPD102418A-200TQI | ISSI, Integrated Silicon Solution Inc |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~85°C TA | Tray | 2 (1 Year) | SRAM - Synchronous, SDR | 1.6mm | Non-RoHS Compliant | 100-LQFP | 20mm | 3.3V | 100 | 100 | 18 Mb | no | 4 | 3A991.B.2.A | PIPELINED ARCHITECTURE | No | 1 | e0 | Tin/Lead (Sn/Pb) | YES | 3.135V~3.6V | QUAD | 240 | 3.3V | 0.65mm | 100 | 3.135V | 30 | 18Mb 1M x 18 | Volatile | 3-STATE | 3.1ns | 200MHz | 20b | SRAM | Parallel | 1MX18 | 18 | 0.075A | COMMON | |||||||||||||||||||||||||||||||||||||||||||
| 7015L12JG8 | Renesas Electronics America Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 0°C~70°C TA | Tape & Reel (TR) | 3 (168 Hours) | SRAM - Dual Port, Asynchronous | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/renesaselectronicsamericainc-7015l12jg8-datasheets-0988.pdf | 68-LCC (J-Lead) | 12 Weeks | 4.5V~5.5V | IDT7015 | 72Kb 8K x 9 | Volatile | SRAM | Parallel | 12ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IS61LPD51236A-200TQI | ISSI, Integrated Silicon Solution Inc |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~85°C TA | Tray | 2 (1 Year) | SRAM - Synchronous, SDR | 1.6mm | Non-RoHS Compliant | 100-LQFP | 20mm | 14mm | 100 | 100 | no | 3A991.B.2.A | PIPELINED ARCHITECTURE | 8542.32.00.41 | 1 | e0 | Tin/Lead (Sn/Pb) | YES | 3.135V~3.465V | QUAD | 240 | 3.3V | 0.65mm | 100 | 3.465V | 3.135V | 30 | 2.5/3.33.3V | 0.475mA | Not Qualified | 18Mb 512K x 36 | Volatile | 3-STATE | 3.1ns | 200MHz | SRAM | Parallel | 512KX36 | 36 | 18874368 bit | 0.075A | COMMON | 3.14V | ||||||||||||||||||||||||||||||||||||||||
| 71256S55DB | Renesas Electronics America Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~125°C TA | Tube | 1 (Unlimited) | SRAM - Asynchronous | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/renesaselectronicsamericainc-71256l45db-datasheets-7653.pdf | 28-CDIP (0.600, 15.24mm) | 15 Weeks | 4.5V~5.5V | 28-CerDip | 256Kb 32K x 8 | Volatile | 55ns | SRAM | Parallel | 55ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MTFC16GAKAEDQ-AAT TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 3 (168 Hours) | ROHS3 Compliant | 100-LBGA | 5 Weeks | 2.7V | FLASH CARD | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MT29F512G08EECAGJ4-5M:A | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Box | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FM28V202A-TGTR | Cypress Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | F-RAM™ | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 3 (168 Hours) | FRAM (Ferroelectric RAM) | ASYNCHRONOUS | 1.194mm | ROHS3 Compliant | 2009 | 44-TSOP (0.400, 10.16mm Width) | 18.415mm | 3.3V | Lead Free | 44 | 13 Weeks | 44 | 2 Mb | EAR99 | Tin | 8542.32.00.71 | 1 | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | 2V~3.6V | DUAL | 260 | 3.3V | 0.8mm | 3.6V | 2V | 30 | 2Mb 128K x 16 | Non-Volatile | 16b | FRAM | Parallel | 128KX16 | 16 | 90ns | ||||||||||||||||||||||||||||||||||||||||||||
| MTFC16GAKAEEF-AAT | Micron Technology Inc. | $24.14 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | e•MMC™ | Surface Mount | -40°C~105°C TA | Tray | 3 (168 Hours) | FLASH - NAND | ROHS3 Compliant | 169-TFBGA | 128Gb 16G x 8 | Non-Volatile | 2.7V | FLASH | MMC | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 25LC256T-M/MF | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~125°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 1mm | ROHS3 Compliant | 2013 | 8-VDFN Exposed Pad | 6mm | 5mm | 8 | 5 Weeks | 8 | SPI, Serial | 256 kb | IT ALSO OPERATES AT FREQUENCY 5 MHZ AT SUPPLY VOLTAGE 2.5 TO 4.5 V | No | 1 | e3 | Matte Tin (Sn) | YES | 2.5V~5.5V | DUAL | 260 | 5V | 1.27mm | 25LC256 | 5.5V | 4.5V | 40 | 2/5V | 0.006mA | 256Kb 32K x 8 | Non-Volatile | 160 ns | 10MHz | EEPROM | SPI | 8 | 5ms | 0.000001A | SPI | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE/SOFTWARE | ||||||||||||||||||||||||||||||||||||||
| MT61K512M32KPA-16:B TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 0°C~95°C TC | Tape & Reel (TR) | 3 (168 Hours) | SGRAM - GDDR6 | ROHS3 Compliant | 180-TFBGA | 1.31V~1.391V | 16Gb 512M x 32 | Volatile | 8GHz | DRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| S70GL02GT12FHBV23 | Cypress Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GL-T | Surface Mount | -40°C~105°C TA | Tape & Reel (TR) | 3 (168 Hours) | FLASH - NOR | ASYNCHRONOUS | 1.4mm | ROHS3 Compliant | 64-LBGA | 13mm | 11mm | 64 | 13 Weeks | 8542.32.00.51 | 1 | YES | 2.7V~3.6V | BOTTOM | NOT SPECIFIED | 3V | 1mm | 3.6V | 2.7V | NOT SPECIFIED | R-PBGA-B64 | AEC-Q100 | 2Gb 256M x 8 128M x 16 | Non-Volatile | 120ns | 3V | FLASH | Parallel | 128MX16 | 16 | 2147483648 bit | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||
| CY7C1312KV18-250BZCT | Cypress Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 0°C~70°C TA | Tape & Reel (TR) | 3 (168 Hours) | SRAM - Synchronous, QDR II | 1.4mm | Non-RoHS Compliant | 2003 | 165-LBGA | 15mm | 1.8V | 165 | 13 Weeks | 165 | 18 Mb | no | 2 | PIPELINED ARCHITECTURE | No | 1 | 560mA | e0 | Tin/Lead (Sn/Pb) | 1.7V~1.9V | BOTTOM | 235 | 1.8V | 1mm | CY7C1312 | 1.9V | 1.7V | 20 | 18Mb 1M x 18 | Volatile | 3-STATE | 450 ps | 250MHz | 19b | SRAM | Parallel | 1MX18 | 18 | 18b | Synchronous | SEPARATE | 1.7V | ||||||||||||||||||||||||||||||||||||||
| MTFC16GAKAEEF-O1 AIT | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | e•MMC™ | Surface Mount | -40°C~85°C TA | Tray | 3 (168 Hours) | FLASH - NAND | ROHS3 Compliant | 169-TFBGA | 128Gb 16G x 8 | Non-Volatile | FLASH | MMC | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MT53E384M32D2DS-046 AAT:E | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~105°C TC | Tray | 3 (168 Hours) | SDRAM - Mobile LPDDR4 | ROHS3 Compliant | 200-WFBGA | 0.6V 1.1V | 12Gb 384M x 32 | Volatile | 2.133GHz | DRAM | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DS1230WP-150+ | Maxim Integrated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 0°C~70°C TA | Tube | 3 (168 Hours) | NVSRAM (Non-Volatile SRAM) | ASYNCHRONOUS | ROHS3 Compliant | 2004 | https://pdf.utmel.com/r/datasheets/maximintegrated-ds1230w100-datasheets-6581.pdf | 34-PowerCap™ Module | 25.019mm | 23.495mm | Lead Free | 34 | 6 Weeks | yes | EAR99 | 10 YEAR DATA RETENTION | not_compliant | 8473.30.11.40 | 1 | e3 | MATTE TIN | NO | 3V~3.6V | DUAL | 245 | 3.3V | 1.27mm | DS1230W | 34 | 3.6V | 3V | 40 | SRAMs | 3.3V | 0.05mA | Not Qualified | R-XDMA-P34 | 256Kb 32K x 8 | Non-Volatile | NVSRAM | Parallel | 256KX8 | 8 | 150ns | 2097152 bit | 0.00025A | 150 ns | ||||||||||||||||||||||||||||||||||||
| IS43TR16512AL-15HBLI | ISSI, Integrated Silicon Solution Inc |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -40°C~95°C TC | Tray | 3 (168 Hours) | SDRAM - DDR3L | SYNCHRONOUS | 1.4mm | ROHS3 Compliant | 96-LFBGA | 14mm | 1.35V | 96 | 12 Weeks | 96 | 8 Gb | 1 | AUTO/SELF REFRESH | Copper, Silver, Tin | 1.333GHz | 1 | e1 | 1.283V~1.45V | BOTTOM | 260 | 1.5V | 0.8mm | 1.575V | 1.425V | 10 | 8Gb 512M x 16 | Volatile | 16b | 20ns | 667MHz | 15b | DRAM | Parallel | 512MX16 | 16 | 15ns | ||||||||||||||||||||||||||||||||||||||||||||
| MT29F512G08EBHBFJ4-R:B TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 3 (168 Hours) | ROHS3 Compliant | 132-VBGA | 8 Weeks | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| S99-50481 | Cypress Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 3 (168 Hours) | ROHS3 Compliant | 12 Weeks |
