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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Technology | Operating Mode | Height Seated (Max) | RoHS Status | Published | Datasheet | Package / Case | Length | Width | Operating Supply Voltage | Number of Terminations | Factory Lead Time | Number of Pins | Interface | Density | Pbfree Code | Number of Ports | ECCN Code | Additional Feature | Contact Plating | HTS Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Surface Mount | Voltage - Supply | Terminal Position | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Base Part Number | Pin Count | Supply Voltage-Max (Vsup) | Supply Voltage-Min (Vsup) | Time@Peak Reflow Temperature-Max (s) | Subcategory | Supply Current-Max | Qualification Status | JESD-30 Code | Supplier Device Package | Memory Size | Memory Type | Data Bus Width | Access Time | Clock Frequency | Address Bus Width | Memory Format | Memory Interface | Organization | Memory Width | Write Cycle Time - Word, Page | Memory Density | Standby Current-Max | Word Size | Access Time (Max) | Sync/Async | Data Polling | Toggle Bit | Number of Sectors/Size | Sector Size | Ready/Busy | Page Size |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| MT29F32G08ABAAAWP-Z:A | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 0°C~70°C TA | Tray | 3 (168 Hours) | FLASH - NAND | ROHS3 Compliant | 2014 | 48-TFSOP (0.724, 18.40mm Width) | 3.3V | 48 | 5 Weeks | 48 | Parallel, Serial | 32 Gb | Tin | 2.7V~3.6V | DUAL | 0.5mm | MT29F32G08 | 0.05mA | Not Qualified | 32Gb 4G x 8 | Non-Volatile | FLASH | Parallel | 4GX8 | 8 | 0.00001A | 8b | 20 ns | Asynchronous | NO | NO | 4K | 1M | YES | 8kB | ||||||||||||||||||||||||||||||||||
| CY15B108QN-20LPXI | Cypress Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Excelon™-LP,F-RAM™ | Surface Mount | -40°C~85°C TA | Tray | 3 (168 Hours) | FRAM (Ferroelectric RAM) | SYNCHRONOUS | 0.55mm | ROHS3 Compliant | 8-UQFN | 3.28mm | 3.23mm | 8 | 13 Weeks | 1 | YES | 1.8V~3.6V | DUAL | 3.3V | 0.65mm | 3.6V | 1.8V | R-PDSO-N8 | 8Mb 1M x 8 | Non-Volatile | 20MHz | FRAM | SPI | 1MX8 | 8 | 8388608 bit | |||||||||||||||||||||||||||||||||||||||||
| MT53B512M32D2NP-053 WT:C TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -30°C~85°C TC | Tape & Reel (TR) | 3 (168 Hours) | SDRAM - Mobile LPDDR4 | ROHS3 Compliant | 200-WFBGA | 1.1V | 16Gb 512M x 32 | Volatile | 1866MHz | DRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MT53E384M32D2DS-046 AUT:E | Micron Technology Inc. | $19.44 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~125°C TC | Tray | 3 (168 Hours) | SDRAM - Mobile LPDDR4 | ROHS3 Compliant | 200-WFBGA | 0.6V 1.1V | 12Gb 384M x 32 | Volatile | 2.133GHz | DRAM | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MT53B256M64D2TP-062 XT:C | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 3 (168 Hours) | SDRAM - Mobile LPDDR4 | ROHS3 Compliant | 1.1V | 16Gb 256M x 64 | Volatile | 1600MHz | DRAM | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CY14B104NA-ZS45XIT | Cypress Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 3 (168 Hours) | NVSRAM (Non-Volatile SRAM) | ASYNCHRONOUS | 1.194mm | ROHS3 Compliant | 2011 | 44-TSOP (0.400, 10.16mm Width) | 18.415mm | 3V | 44 | 6 Weeks | 44 | 4 Mb | 3A991.B.2.A | Gold, Tin | 8542.32.00.41 | 1 | 52mA | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | 2.7V~3.6V | DUAL | 260 | 3V | 0.8mm | CY14B104 | 44 | 3.6V | 2.7V | 30 | SRAMs | Not Qualified | 4Mb 256K x 16 | Non-Volatile | 16b | NVSRAM | Parallel | 256KX16 | 16 | 45ns | 0.005A | 16b | 45 ns | |||||||||||||||||||||||||
| MT29F512G08EBHAFJ4-3T:A | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 0°C~70°C TA | Tray | 3 (168 Hours) | FLASH - NAND | ROHS3 Compliant | 132-VBGA | 512Gb 64G x 8 | Non-Volatile | 333MHz | FLASH | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IS64WV20488BLL-10CTLA3 | ISSI, Integrated Silicon Solution Inc |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~125°C TA | Tube | 3 (168 Hours) | SRAM - Asynchronous | 1.2mm | ROHS3 Compliant | 44-TSOP (0.400, 10.16mm Width) | 18.41mm | 10.16mm | 44 | 10 Weeks | 1 | YES | 2.4V~3.6V | DUAL | NOT SPECIFIED | 3V | 0.8mm | 3.6V | 2.4V | NOT SPECIFIED | R-PDSO-G44 | 16Mb 2M x 8 | Volatile | SRAM | Parallel | 2MX8 | 8 | 10ns | 16777216 bit | 10 ns | ||||||||||||||||||||||||||||||||||||||||
| 71T75602S100BG8 | Renesas Electronics America Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 0°C~70°C TA | Tape & Reel (TR) | 3 (168 Hours) | SRAM - Synchronous, SDR (ZBT) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/renesaselectronicsamericainc-71t75602s166pfg-datasheets-1878.pdf | 119-BGA | 14 Weeks | 2.375V~2.625V | IDT71T75 | 18Mb 512K x 36 | Volatile | 5ns | 100MHz | SRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 71T75602S150BGG8 | Renesas Electronics America Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 0°C~70°C TA | Tape & Reel (TR) | 3 (168 Hours) | SRAM - Synchronous, SDR (ZBT) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/renesaselectronicsamericainc-71t75602s166pfg-datasheets-1878.pdf | 119-BGA | 14 Weeks | 2.375V~2.625V | IDT71T75 | 119-PBGA (14x22) | 18Mb 512K x 36 | Volatile | 3.8ns | 150MHz | SRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MT53E256M64D4NZ-053 WT:B TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 3 (168 Hours) | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 71T75802S150BG8 | Renesas Electronics America Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 0°C~70°C TA | Tape & Reel (TR) | 3 (168 Hours) | SRAM - Synchronous, SDR (ZBT) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/renesaselectronicsamericainc-71t75602s166pfg-datasheets-1878.pdf | 119-BGA | 14 Weeks | 2.375V~2.625V | IDT71T75 | 119-PBGA (14x22) | 18Mb 1M x 18 | Volatile | 3.8ns | 150MHz | SRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MT29F512G08EBHAFJ4-3T:A TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 0°C~70°C TA | Tape & Reel (TR) | 3 (168 Hours) | FLASH - NAND | ROHS3 Compliant | 132-VBGA | 8 Weeks | 512Gb 64G x 8 | Non-Volatile | 333MHz | FLASH | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MT53E384M32D2DS-053 AUT:E | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~125°C TC | Tray | 3 (168 Hours) | SDRAM - Mobile LPDDR4 | ROHS3 Compliant | 200-WFBGA | 0.6V 1.1V | 12Gb 384M x 32 | Volatile | 1.866GHz | DRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MT53E384M32D2DS-053 AIT:E | Micron Technology Inc. | $15.59 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~95°C TC | Tray | 3 (168 Hours) | SDRAM - Mobile LPDDR4 | ROHS3 Compliant | 200-WFBGA | 0.6V 1.1V | 12Gb 384M x 32 | Volatile | 1.866GHz | DRAM | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RMLV3216AGSA-5S2#KA0 | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 3 (168 Hours) | ROHS3 Compliant | 48-TFSOP (0.724, 18.40mm Width) | 18 Weeks | yes | 2.7V~3.6V | 48 | 32Mb 4M x 8 2M x 16 | Volatile | SRAM | Parallel | 55ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MT53D512M32D2DS-046 WT:D | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -30°C~85°C | Tray | 3 (168 Hours) | SDRAM - Mobile LPDDR4 | ROHS3 Compliant | 200-WFBGA | 0.6V 1.1V | 16Gb 512M x 32 | Volatile | 2.133GHz | DRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 71T75802S150BGG8 | Renesas Electronics America Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 0°C~70°C TA | Tape & Reel (TR) | 3 (168 Hours) | SRAM - Synchronous, SDR (ZBT) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/renesaselectronicsamericainc-71t75602s166pfg-datasheets-1878.pdf | 119-BGA | 14 Weeks | 2.375V~2.625V | IDT71T75 | 119-PBGA (14x22) | 18Mb 1M x 18 | Volatile | 3.8ns | 150MHz | SRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MTFC16GJGDQ-AIT Z TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | e•MMC™ | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 3 (168 Hours) | FLASH - NAND | ROHS3 Compliant | 100-LBGA | 1.65V~3.6V | 128Gb 16G x 8 | Non-Volatile | FLASH | MMC | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MT53B256M64D2PX-062 XT:C | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | -30°C~105°C TC | Tray | SDRAM - Mobile LPDDR4 | 9 Weeks | 1.1V | 16Gb 256M x 64 | Volatile | 1600MHz | DRAM | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 71V65703S85BGGI | Renesas Electronics America Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~85°C TA | Tray | 3 (168 Hours) | SRAM - Synchronous, SDR (ZBT) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/renesaselectronicsamericainc-71v65903s85pfg8-datasheets-2225.pdf | 119-BGA | 13 Weeks | 3.135V~3.465V | IDT71V65703 | 9Mb 256K x 36 | Volatile | 8.5ns | SRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 71T75602S133BGG8 | Renesas Electronics America Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 0°C~70°C TA | Tape & Reel (TR) | 3 (168 Hours) | SRAM - Synchronous, SDR (ZBT) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/renesaselectronicsamericainc-71t75602s166pfg-datasheets-1878.pdf | 119-BGA | 10 Weeks | 2.375V~2.625V | IDT71T75 | 119-PBGA (14x22) | 18Mb 512K x 36 | Volatile | 4.2ns | 133MHz | SRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MT53E384M32D2DS-053 AUT:E TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~125°C TC | Tape & Reel (TR) | 3 (168 Hours) | SDRAM - Mobile LPDDR4 | ROHS3 Compliant | 200-WFBGA | 0.6V 1.1V | 12Gb 384M x 32 | Volatile | 1.866GHz | DRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MT53D256M64D4NY-046 XT:B | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | -30°C~105°C TC | Tray | 3 (168 Hours) | SDRAM - Mobile LPDDR4 | ROHS3 Compliant | 1.1V | 16Gb 256M x 64 | Volatile | 2133MHz | DRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IS49NLC36800-25WBL | ISSI, Integrated Silicon Solution Inc |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 0°C~70°C TA | Tray | 3 (168 Hours) | CMOS | SYNCHRONOUS | 1.2mm | ROHS3 Compliant | 144-TBGA | 18.5mm | 11mm | 144 | 14 Weeks | 1 | EAR99 | AUTO REFRESH | 1 | YES | 1.7V~1.9V | BOTTOM | NOT SPECIFIED | 1.8V | 1mm | 1.9V | 1.7V | NOT SPECIFIED | R-PBGA-B144 | 288Mb 8M x 36 | Volatile | 15ns | 400MHz | DRAM | Parallel | 8MX36 | 36 | 301989888 bit | ||||||||||||||||||||||||||||||||||||
| MT53E512M32D2NP-046 WT:E | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Box | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MT53E384M32D2DS-046 AUT:E TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~125°C TC | Tape & Reel (TR) | 3 (168 Hours) | SDRAM - Mobile LPDDR4 | ROHS3 Compliant | 200-WFBGA | 0.6V 1.1V | 12Gb 384M x 32 | Volatile | 2.133GHz | DRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 71T75602S133BG8 | Renesas Electronics America Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 0°C~70°C TA | Tape & Reel (TR) | 3 (168 Hours) | SRAM - Synchronous, SDR (ZBT) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/renesaselectronicsamericainc-71t75602s166pfg-datasheets-1878.pdf | 119-BGA | 14 Weeks | 2.375V~2.625V | IDT71T75 | 119-PBGA (14x22) | 18Mb 512K x 36 | Volatile | 4.2ns | 133MHz | SRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MT29F32G08ABCABH1-10Z:A | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 0°C~70°C TA | Tray | 3 (168 Hours) | FLASH - NAND | ROHS3 Compliant | 2014 | 100-VFBGA | 3.3V | 100 | 5 Weeks | 100 | Parallel, Serial | 32 Gb | Copper, Silver, Tin | 50mA | 2.7V~3.6V | BOTTOM | 1mm | MT29F32G08 | Not Qualified | 32Gb 4G x 8 | Non-Volatile | 20 ns | 100MHz | 34b | FLASH | Parallel | 4GX8 | 8 | 0.00001A | 8b | Asynchronous | NO | NO | 4K | 1M | YES | 8kB | ||||||||||||||||||||||||||||||||
| MT29F512G08EBHAFJ4-3ITF:A | Micron Technology Inc. | $51.57 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Bulk | 5 Weeks |
