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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Diameter | Package / Case | Length | Height | Width | Color | Lead Free | Material | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Wire Gauge (Max) | Wire Gauge (Min) | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Plating | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| TSM600N25ECH C5G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm600n25echc5g-datasheets-7313.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 22 Weeks | 250V | 52W Tc | N-Channel | 423pF @ 25V | 600m Ω @ 4A, 10V | 5V @ 250μA | 8A Tc | 8.4nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STP3NK90ZFP | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stp3nk90zfp-datasheets-7316.pdf | TO-220-3 Full Pack | 10.4mm | 16.4mm | 4.6mm | 3 | 12 Weeks | No SVHC | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | e3 | Matte Tin (Sn) | 245 | STP3N | 3 | Single | 25W | 1 | FET General Purpose Power | 18 ns | 7ns | 18 ns | 45 ns | 3A | 30V | SILICON | ISOLATED | SWITCHING | 900V | 900V | 3.75V | 25W Tc | TO-220AB | 3A | N-Channel | 590pF @ 25V | 4.8 Ω @ 1.5A, 10V | 4.5V @ 50μA | 3A Tc | 22.7nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| BUK964R4-40B,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/nexperiausainc-buk964r440b118-datasheets-7186.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 12 Weeks | 3 | EAR99 | Tin | No | e3 | YES | GULL WING | 3 | Single | 254W | 1 | R-PSSO-G2 | 44 ns | 118ns | 132 ns | 197 ns | 174A | 15V | 40V | SILICON | DRAIN | SWITCHING | 254W Tc | 75A | 697A | 0.0044Ohm | 40V | N-Channel | 7124pF @ 25V | 4m Ω @ 25A, 10V | 2V @ 1mA | 75A Tc | 64nC @ 5V | 5V 10V | ±15V | ||||||||||||||||||||||||||||||||||||||||||||||
| STD120N4LF6 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, DeepGATE™, STripFET™ VI | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-std120n4lf6-datasheets-7180.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.6mm | 2.4mm | 6.2mm | Lead Free | 2 | No SVHC | 4MOhm | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | No | e3 | Matte Tin (Sn) - annealed | GULL WING | 260 | STD12 | 3 | Single | 110W | 1 | FET General Purpose Power | R-PSSO-G2 | 15 ns | 95ns | 45 ns | 125 ns | 80A | 20V | SILICON | DRAIN | SWITCHING | 1V | 110W Tc | 40V | N-Channel | 4300pF @ 25V | 4m Ω @ 40A, 10V | 3V @ 250μA | 80A Tc | 80nC @ 10V | 5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IPS80R1K2P7AKMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/infineontechnologies-ips80r1k2p7akma1-datasheets-7197.pdf | TO-251-3 Stub Leads, IPak | 3 | 18 Weeks | EAR99 | not_compliant | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 800V | 800V | 37W Tc | 11A | 10 mJ | N-Channel | 300pF @ 500V | 1.2 Ω @ 1.7A, 10V | 3.5V @ 80μA | 4.5A Tc | 11nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLR110PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | /files/vishaysiliconix-irlu110pbf-datasheets-8636.pdf | 100V | 4.3A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 8 Weeks | 1.437803g | Unknown | 540MOhm | 3 | No | 1 | Single | 25W | 1 | D-Pak | 250pF | 9.3 ns | 47ns | 17 ns | 16 ns | 4.3A | 10V | 100V | 2V | 2.5W Ta 25W Tc | 540mOhm | 100V | N-Channel | 250pF @ 25V | 540mOhm @ 2.6A, 5V | 2V @ 250μA | 4.3A Tc | 6.1nC @ 5V | 540 mΩ | 4V 5V | ±10V | |||||||||||||||||||||||||||||||||||||||||||||
| TSM60N380CP ROG | Taiwan Semiconductor Corporation | $8.04 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 3 (168 Hours) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm60n380cprog-datasheets-7214.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | 600V | 125W Tc | N-Channel | 1040pF @ 100V | 380mOhm @ 5.5A, 10V | 4V @ 250μA | 11A Tc | 20.5nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN6R5-80BS,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/nexperiausainc-psmn6r580bs118-datasheets-7175.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 12 Weeks | 3 | No | e3 | Tin (Sn) | YES | SINGLE | GULL WING | 3 | 210W | 1 | R-PSSO-G2 | 26 ns | 24ns | 22 ns | 57 ns | 100A | 4.3V | 80V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 210W Tc | 470A | 0.0069Ohm | 700 mJ | 73V | N-Channel | 4461pF @ 40V | 6.9m Ω @ 15A, 10V | 4V @ 1mA | 100A Tc | 71nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| SIJA52DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sija52dpt1ge3-datasheets-6377.pdf | PowerPAK® SO-8 | 14 Weeks | EAR99 | unknown | NOT SPECIFIED | NOT SPECIFIED | 60A | 40V | 48W Tc | N-Channel | 7150pF @ 20V | 1.7m Ω @ 15A, 10V | 2.4V @ 250μA | 60A Tc | 150nC @ 20V | 4.5V 10V | +20V, -16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN9R5-100BS,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/nexperiausainc-psmn9r5100bs118-datasheets-7240.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 12 Weeks | 3 | No | e3 | Tin (Sn) | YES | SINGLE | GULL WING | 3 | 211W | 1 | R-PSSO-G2 | 22 ns | 25.2ns | 22.8 ns | 52.2 ns | 89A | 20V | 100V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 211W Tc | 0.0096Ohm | 90V | N-Channel | 4454pF @ 50V | 9.6m Ω @ 15A, 10V | 4V @ 1mA | 89A Tc | 82nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| R6004CNDTL | ROHM Semiconductor | $0.73 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 52 Weeks | 3 | No | e2 | Tin/Copper (Sn98Cu2) | SINGLE | GULL WING | 1 | R-PSSO-G2 | 23 ns | 28ns | 39 ns | 44 ns | 4A | 25V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 600V | 600V | 40W Tc | 4A | 16A | 1.1 mJ | N-Channel | 280pF @ 25V | 1.8 Ω @ 2A, 10V | 4.5V @ 1mA | 4A Ta | 11nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR420APBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/vishaysiliconix-irfr420apbf-datasheets-7258.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 2 | 12 Weeks | 1.437803g | Unknown | 300mOhm | 3 | AVALANCHE RATED | No | e3 | MATTE TIN | GULL WING | 260 | 3 | 1 | Single | 40 | 83W | 1 | R-PSSO-G2 | 8.1 ns | 12ns | 13 ns | 16 ns | 3.3A | 30V | SILICON | DRAIN | SWITCHING | 4.5V | 83W Tc | 500V | N-Channel | 340pF @ 25V | 3 Ω @ 1.5A, 10V | 4.5V @ 250μA | 3.3A Tc | 17nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| TSM1NB60CH C5G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2018 | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm1nb60cprog-datasheets-5512.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 20 Weeks | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 600V | 39W Tc | N-Channel | 138pF @ 25V | 10 Ω @ 500mA, 10V | 4.5V @ 250μA | 1A Tc | 6.1nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK966R5-60E,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/nexperiausainc-buk966r560e118-datasheets-7058.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 12 Weeks | 3 | AVALANCHE RATED | Tin | not_compliant | e3 | YES | SINGLE | GULL WING | 3 | 1 | R-PSSO-G2 | 32 ns | 75ns | 59 ns | 59 ns | 75A | 10V | 60V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 182W Tc | 452A | 0.0065Ohm | 196 mJ | N-Channel | 6900pF @ 25V | 5.9m Ω @ 25A, 10V | 2.1V @ 1mA | 75A Tc | 48nC @ 5V | 5V | ±10V | |||||||||||||||||||||||||||||||||||||||||||||||
| CSD16414Q5 | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 8-PowerTDFN | 5mm | 1.05mm | 6mm | Contains Lead | 5 | 6 Weeks | No SVHC | 8 | ACTIVE (Last Updated: 1 day ago) | yes | 1mm | EAR99 | AVALANCHE RATED | Tin | No | e3 | DUAL | 260 | CSD16414 | 8 | Single | 3.2W | 1 | FET General Purpose Power | 15 ns | 24ns | 11.1 ns | 18.4 ns | 100A | 16V | 25V | SILICON | DRAIN | SWITCHING | 1.6V | 3.2W Ta | 34A | 0.0026Ohm | 500 mJ | 25V | N-Channel | 3650pF @ 12.5V | 1.6 V | 1.9m Ω @ 30A, 10V | 2V @ 250μA | 34A Ta 100A Tc | 21nC @ 4.5V | 4.5V 10V | +16V, -12V | |||||||||||||||||||||||||||||||||||
| PSMN8R7-80BS,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/nexperiausainc-psmn8r780bs118-datasheets-6966.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 12 Weeks | 3 | No | e3 | Tin (Sn) | YES | SINGLE | GULL WING | 3 | 170W | 1 | R-PSSO-G2 | 21 ns | 26ns | 20 ns | 46 ns | 90A | 20V | 80V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 170W Tc | 0.0087Ohm | 73V | N-Channel | 3346pF @ 40V | 8.7m Ω @ 10A, 10V | 4V @ 1mA | 90A Tc | 52nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHJ6N65E-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihj6n65et1ge3-datasheets-7163.pdf | PowerPAK® SO-8 | 18 Weeks | No SVHC | 4 | EAR99 | NOT SPECIFIED | NOT SPECIFIED | 5.6A | 650V | 2V | 74W Tc | N-Channel | 596pF @ 100V | 868m Ω @ 3A, 10V | 4V @ 250μA | 5.6A Tc | 32nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOU4N60 | Alpha & Omega Semiconductor Inc. | $3.51 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -50°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | TO-251-3 Short Leads, IPak, TO-251AA | 3 | 16 Weeks | SINGLE | 3 | 1 | R-PSIP-T3 | 4A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 600V | 600V | 104W Tc | 4A | 235 mJ | N-Channel | 640pF @ 25V | 2.3 Ω @ 2A, 10V | 4.5V @ 250μA | 4A Tc | 14.5nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STL190N4F7AG | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, STripFET™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stl190n4f7ag-datasheets-6983.pdf | 8-PowerVDFN | 24 Weeks | No SVHC | 8 | STL190 | 120A | 40V | 4V | 127W Tc | N-Channel | 3000pF @ 25V | 2m Ω @ 17.5A, 10V | 4V @ 250μA | 120A Tc | 41nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTMFS5C430NT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/onsemiconductor-ntmfs5c430nt1g-datasheets-7062.pdf | 8-PowerTDFN, 5 Leads | Lead Free | 5 | 16 Weeks | ACTIVE (Last Updated: 1 day ago) | yes | not_compliant | e3 | Matte Tin (Sn) | YES | DUAL | FLAT | 1 | R-PDSO-F5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 40V | 40V | 3.8W Ta 106W Tc | 185A | 900A | 0.0017Ohm | 338 mJ | N-Channel | 3300pF @ 25V | 1.7m Ω @ 50A, 10V | 3.5V @ 250μA | 35A Ta 185A Tc | 47nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TSM2N60ECH C5G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-251-3 Short Leads, IPak, TO-251AA | 25 Weeks | 600V | 52.1W Tc | N-Channel | 362pF @ 25V | 4 Ω @ 1A, 10V | 5V @ 250μA | 2A Tc | 9.5nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK9611-80E,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Crimp | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/nexperiausainc-buk961180e118-datasheets-7053.pdf | 12.7mm | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 15.875mm | Natural | Brass, Metal | 2 | 12 Weeks | 3.949996g | 3 | AVALANCHE RATED | not_compliant | e3 | Tin (Sn) | YES | GULL WING | 3 | Single | 182W | 1 | R-PSSO-G2 | 29.6 ns | 63.9ns | 53.2 ns | 58.4 ns | 75A | 15V | 80V | DRAIN | SWITCHING | 18 AWG | 16 AWG | 182W Tc | Lead, Tin | N-Channel | 7149pF @ 25V | 10m Ω @ 20A, 10V | 2.1V @ 1mA | 75A Tc | 48.8nC @ 5V | 5V | ±10V | |||||||||||||||||||||||||||||||||||||||||||
| BUK764R0-40E,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/nexperiausainc-buk764r040e118-datasheets-7074.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 12 Weeks | 3.949996g | 3 | AVALANCHE RATED | Tin | not_compliant | e3 | YES | GULL WING | 3 | Single | 182W | 1 | R-PSSO-G2 | 22 ns | 20ns | 20 ns | 43 ns | 75A | 20V | 40V | SILICON | DRAIN | SWITCHING | 182W Tc | 620A | 0.004Ohm | N-Channel | 4405pF @ 25V | 4m Ω @ 25A, 10V | 4V @ 1mA | 75A Tc | 54nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IPS80R2K0P7AKMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ips80r2k0p7akma1-datasheets-7090.pdf | TO-251-3 Stub Leads, IPak | 3 | 18 Weeks | EAR99 | not_compliant | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 800V | 800V | 24W Tc | 6A | 2Ohm | 6 mJ | N-Channel | 175pF @ 500V | 2 Ω @ 940mA, 10V | 3.5V @ 50μA | 3A Tc | 9nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN008-75B,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/nexperiausainc-psmn00875b118-datasheets-6935.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 12 Weeks | 3 | EAR99 | No | 8541.29.00.75 | e3 | Tin (Sn) | YES | GULL WING | 3 | Single | 230W | 1 | R-PSSO-G2 | 18 ns | 55ns | 80 ns | 88 ns | 75A | 20V | 75V | SILICON | DRAIN | SWITCHING | 230W Tc | 240A | 0.0085Ohm | 75V | N-Channel | 5260pF @ 25V | 8.5m Ω @ 25A, 10V | 4V @ 1mA | 75A Tc | 122.8nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IPS80R2K4P7AKMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ips80r2k4p7akma1-datasheets-7109.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | 18 Weeks | EAR99 | not_compliant | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 800V | 800V | 22W Tc | 5.3A | 4 mJ | N-Channel | 150pF @ 500V | 2.4 Ω @ 800mA, 10V | 3.5V @ 40μA | 2.5A Tc | 7.5nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STD3NK60Z-1 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stp3nk60z-datasheets-5037.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 6.6mm | 6.2mm | 2.4mm | Lead Free | 3 | No SVHC | 3 | ACTIVE (Last Updated: 2 weeks ago) | EAR99 | No | e3 | Matte Tin (Sn) - annealed | 260 | STD3N | 3 | Single | 30 | 45W | 1 | FET General Purpose Power | 9 ns | 14ns | 14 ns | 19 ns | 2.4A | 30V | SILICON | SWITCHING | 3.75V | 45W Tc | 9.6A | 600V | N-Channel | 311pF @ 25V | 3.6 Ω @ 1.2A, 10V | 4.5V @ 50μA | 2.4A Tc | 11.8nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||
| FDS4470 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fds4470-datasheets-6950.pdf | 40V | 12.5A | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | 9 Weeks | 130mg | No SVHC | 9MOhm | 8 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | No | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | GULL WING | Single | 2.5W | 1 | FET General Purpose Power | 14 ns | 12ns | 29 ns | 37 ns | 12.5A | 30V | SILICON | SWITCHING | 3.9V | 2.5W Ta | 50A | 370 mJ | 40V | N-Channel | 2659pF @ 20V | 9m Ω @ 12.5A, 10V | 5V @ 250μA | 12.5A Ta | 63nC @ 10V | 10V | +30V, -20V | |||||||||||||||||||||||||||||||||||||||
| IPU80R3K3P7AKMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipu80r3k3p7akma1-datasheets-6963.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | 18 Weeks | EAR99 | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 800V | 800V | 18W Tc | 3.8A | 2 mJ | N-Channel | 120pF @ 500V | 3.3 Ω @ 590mA, 10V | 3.5V @ 30μA | 1.9A Tc | 5.8nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TSM4NB65CH C5G | Taiwan Semiconductor Corporation | $6.11 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm4nb65chc5g-datasheets-6986.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 32 Weeks | TO-251 (IPAK) | 650V | 70W Tc | N-Channel | 549pF @ 25V | 3.37Ohm @ 2A, 10V | 4.5V @ 250μA | 4A Tc | 13.46nC @ 10V | 10V | ±30V |
