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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Manufacturer Package Identifier | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SI7326DN-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-si7326dnt1ge3-datasheets-6495.pdf | PowerPAK® 1212-8 | 3.3mm | 1.04mm | 3.3mm | 5 | 14 Weeks | 8 | yes | EAR99 | Tin | No | e3 | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 1.5W | 1 | FET General Purpose Power | S-XDSO-C5 | 8 ns | 12ns | 12 ns | 32 ns | 6.5A | 25V | SILICON | DRAIN | SWITCHING | 1.5W Ta | 40A | 30V | N-Channel | 19.5m Ω @ 10A, 10V | 1.8V @ 250μA | 6.5A Ta | 13nC @ 5V | 4.5V 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||
| FQD2N80TM | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | /files/onsemiconductor-fqd2n80tm-datasheets-6395.pdf | 800V | 1.8A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.6mm | 2.517mm | 6.1mm | Lead Free | 2 | 4 Weeks | 260.37mg | No SVHC | 6.3Ohm | 3 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | Tin | No | e3 | GULL WING | 1 | Single | 2.5W | 1 | FET General Purpose Power | 150°C | R-PSSO-G2 | 12 ns | 30ns | 28 ns | 25 ns | 1.8A | 30V | SILICON | DRAIN | SWITCHING | 3V | 2.5W Ta 50W Tc | 7.2A | 800V | N-Channel | 550pF @ 25V | 5 V | 6.3 Ω @ 900mA, 10V | 5V @ 250μA | 1.8A Tc | 15nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| NTMS4916NR2G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/onsemiconductor-ntms4916nr2g-datasheets-6536.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | 6 Weeks | 8 | ACTIVE (Last Updated: 19 hours ago) | yes | EAR99 | Tin | No | e3 | YES | DUAL | GULL WING | 8 | Single | 1.3W | 1 | FET General Purpose Power | 9.4 ns | 7.4ns | 15.6 ns | 32 ns | 11.6A | 20V | SILICON | SWITCHING | 890mW Ta | 9.4A | 0.009Ohm | 30V | N-Channel | 1376pF @ 25V | 9m Ω @ 12A, 10V | 2.5V @ 250μA | 7.8A Ta | 15nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| FQD3N60CTM-WS | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fqd3n60ctmws-datasheets-6543.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 11 Weeks | 260.37mg | 3 | ACTIVE (Last Updated: 1 day ago) | yes | No | e3 | Tin (Sn) | GULL WING | Single | 50W | 1 | FET General Purpose Power | R-PSSO-G2 | 12 ns | 30ns | 35 ns | 35 ns | 2.4A | 30V | SILICON | DRAIN | SWITCHING | 600V | 600V | 50W Tc | TO-252AA | 9.6A | N-Channel | 565pF @ 25V | 3.4 Ω @ 1.2A, 10V | 4V @ 250μA | 2.4A Tc | 14nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||
| TSM042N03CS RLG | Taiwan Semiconductor Corporation | $0.15 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 175°C TJ | Digi-Reel® | 3 (168 Hours) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm042n03csrlg-datasheets-6326.pdf | 8-SOIC (0.154, 3.90mm Width) | 20 Weeks | 30V | 7W Tc | N-Channel | 2200pF @ 25V | 4.2m Ω @ 12A, 10V | 2.5V @ 250μA | 30A Tc | 24nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMG4468LFG-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/diodesincorporated-dmg4468lfg7-datasheets-6498.pdf | 8-PowerUDFN | 5 | 6 Weeks | No SVHC | 8 | yes | EAR99 | No | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | 260 | 8 | 1 | 40 | 1 | FET General Purpose Power | R-PDSO-N5 | 5.46 ns | 14.53ns | 6.01 ns | 18.84 ns | 7.62A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 990mW Ta | N-Channel | 867pF @ 10V | 15m Ω @ 11.6A, 10V | 2V @ 250μA | 7.62A Ta | 18.85nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| ATP112-TL-H | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2010 | /files/onsemiconductor-atp112tlh-datasheets-6508.pdf | ATPAK (2 leads+tab) | 6.5mm | 1.5mm | 7.3mm | Lead Free | 8 Weeks | 3 | ACTIVE (Last Updated: 15 hours ago) | yes | EAR99 | not_compliant | e6 | Tin/Bismuth (Sn/Bi) | Halogen Free | YES | 3 | Single | 40W | 1 | Other Transistors | 10 ns | 150 ns | 25A | 20V | 60V | 40W Tc | P-Channel | 1450pF @ 20V | 43m Ω @ 13A, 10V | 25A Ta | 33.5nC @ 10V | 4V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| CPC5603CTR | IXYS Integrated Circuits Division | $0.71 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | 85°C | -40°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2004 | https://pdf.utmel.com/r/datasheets/ixys-cpc5603ctr-datasheets-3001.pdf | 415V | 5mA | TO-261-4, TO-261AA | Lead Free | 8 Weeks | 250.212891mg | 14Ohm | 4 | 1 | 2.5W | 1 | SOT-223 | 300pF | 5mA | 20V | 415V | 2.5W Ta | 14Ohm | 415V | N-Channel | 14Ohm @ 50mA, 350mV | 5mA Ta | Depletion Mode | 14 Ω | -0.35V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ATP202-TL-H | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | /files/onsemiconductor-atp202tlh-datasheets-6344.pdf | ATPAK (2 leads+tab) | 6.5mm | 1.5mm | 7.3mm | Lead Free | 13 Weeks | 12mOhm | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | Tin | not_compliant | e6 | Halogen Free | YES | 3 | Single | 40W | FET General Purpose Powers | 16 ns | 185ns | 93 ns | 93 ns | 50A | 20V | 30V | 40W Tc | N-Channel | 1650pF @ 10V | 12m Ω @ 25A, 10V | 50A Ta | 27nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| TP0610T-G | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/microchiptechnology-tp0610tg-datasheets-5990.pdf | TO-236-3, SC-59, SOT-23-3 | 2.92mm | 930μm | 1.3mm | 3 | 15 Weeks | 1.437803g | 3 | EAR99 | LOW THRESHOLD | Tin | No | e3 | DUAL | GULL WING | 260 | 1 | Single | 40 | 360mW | 1 | Other Transistors | 10 ns | 15ns | 15 ns | 15 ns | 120mA | 20V | SILICON | SWITCHING | 60V | 360mW Ta | -60V | P-Channel | 60pF @ 25V | 10 Ω @ 200mA, 10V | 2.4V @ 1mA | 120mA Tj | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| CSD16410Q5A | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 8-PowerTDFN | 4.9mm | 6mm | Contains Lead | 5 | 6 Weeks | No SVHC | 8 | ACTIVE (Last Updated: 2 days ago) | yes | 1mm | EAR99 | AVALANCHE RATED | Tin | No | e3 | DUAL | 260 | CSD16410 | 8 | Single | 3W | 1 | FET General Purpose Power | 6.2 ns | 10.7ns | 3.6 ns | 6.5 ns | 59A | 16V | 25V | SILICON | DRAIN | SWITCHING | 1.9V | 3W Ta | 52 pF | 25V | N-Channel | 740pF @ 12.5V | 1.9 V | 8.5m Ω @ 17A, 10V | 2.3V @ 250μA | 16A Ta 59A Tc | 5nC @ 4.5V | 4.5V 10V | +16V, -12V | |||||||||||||||||||||||||||||||||||||
| TPN1600ANH,L1Q | Toshiba Semiconductor and Storage | $0.83 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVIII-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2014 | 8-PowerVDFN | 5 | 16 Weeks | 8 | No | DUAL | FLAT | 1 | 1 | FET General Purpose Power | S-PDSO-F5 | 14 ns | 5ns | 6.2 ns | 21 ns | 17A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 700mW Ta 42W Tc | 36A | 50 pF | 100V | N-Channel | 1600pF @ 50V | 16m Ω @ 8.5A, 10V | 4V @ 200μA | 17A Tc | 19nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| RQ5H020TNTL | ROHM Semiconductor | $0.74 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-rq5h020tntl-datasheets-6279.pdf | SC-96 | 16 Weeks | NOT SPECIFIED | NOT SPECIFIED | 45V | 700mW Ta | N-Channel | 200pF @ 10V | 180m Ω @ 2A, 4.V | 1.5V @ 1mA | 2A Ta | 4.1nC @ 4.5V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TSM5NC50CP ROG | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 3 (168 Hours) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm5nc50cprog-datasheets-6250.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 17 Weeks | TO-252, (D-Pak) | 500V | 83W Tc | N-Channel | 586pF @ 50V | 1.38Ohm @ 2.4A, 10V | 4.5V @ 250μA | 5A Tc | 15nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STD1NK80ZT4 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stq1nk80zrap-datasheets-8501.pdf | 800V | 1A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.6mm | 2.4mm | 6.2mm | Lead Free | 2 | 12 Weeks | No SVHC | 16Ohm | 3 | EAR99 | No | TO-252-P032P | e3 | Matte Tin (Sn) - annealed | GULL WING | 260 | STD1NK | 3 | 1 | Single | 30 | 45W | 1 | FET General Purpose Power | 150°C | R-PSSO-G2 | 8 ns | 30ns | 55 ns | 22 ns | 1A | 30V | SILICON | SWITCHING | 3.75V | 45W Tc | TO-252AA | 1A | 5A | 50 mJ | 800V | N-Channel | 160pF @ 25V | 16 Ω @ 500mA, 10V | 4.5V @ 50μA | 1A Tc | 7.7nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||
| TPN1R603PL,L1Q | Toshiba Semiconductor and Storage | $0.70 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSIX-H | Surface Mount | 175°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2016 | 8-PowerVDFN | 12 Weeks | 8-TSON Advance (3.3x3.3) | 30V | 104W Tc | N-Channel | 3900pF @ 15V | 1.6mOhm @ 40A, 10V | 2.1V @ 300μA | 80A Tc | 41nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTMFS4935NT3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/onsemiconductor-ntmfs4935nt1g-datasheets-0653.pdf | 8-PowerTDFN, 5 Leads | Lead Free | 5 | 16 Weeks | 5 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | Tin | No | e3 | YES | DUAL | FLAT | 5 | Single | 1 | FET General Purpose Power | 16.3 ns | 20ns | 6.6 ns | 27.5 ns | 93A | 20V | SILICON | DRAIN | SWITCHING | 30V | 30V | 930mW Ta 48W Tc | 21.8A | 0.0042Ohm | 110 mJ | N-Channel | 4850pF @ 15V | 3.2m Ω @ 30A, 10V | 2.2V @ 250μA | 13A Ta 93A Tc | 49.4nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| TPN4R806PL,L1Q | Toshiba Semiconductor and Storage | $0.72 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSIX-H | Surface Mount | 175°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 8-PowerVDFN | 12 Weeks | 60V | 630mW Ta 104W Tc | N-Channel | 2770pF @ 30V | 4.8m Ω @ 36A, 10V | 2.5V @ 300μA | 72A Tc | 29nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQS405ENW-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/vishaysiliconix-sqs405enwt1ge3-datasheets-6349.pdf | PowerPAK® 1212-8 | 12 Weeks | EAR99 | unknown | NOT SPECIFIED | NOT SPECIFIED | 12V | 39W Tc | P-Channel | 2650pF @ 6V | 20m Ω @ 13.5A, 4.5V | 1V @ 250μA | 16A Tc | 75nC @ 8V | 2.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TSM4NB60CP ROG | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 20 Weeks | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 600V | 600V | 50W Tc | 4A | 16A | 100 mJ | N-Channel | 500pF @ 25V | 2.5 Ω @ 2A, 10V | 4.5V @ 250μA | 4A Tc | 14.5nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVMFS5834NLT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/onsemiconductor-nvmfs5834nlwft1g-datasheets-1921.pdf | 8-PowerTDFN | Lead Free | 5 | 38 Weeks | 5 | ACTIVE, NOT REC (Last Updated: 2 days ago) | yes | EAR99 | Tin | No | e3 | Halogen Free | YES | DUAL | FLAT | 5 | Single | 3W | 1 | FET General Purpose Power | 10 ns | 56.4ns | 6.6 ns | 17.4 ns | 14A | 20V | SILICON | DRAIN | 40V | 40V | 3.6W Ta 107W Tc | 276A | 48 mJ | N-Channel | 1231pF @ 20V | 9.3m Ω @ 20A, 10V | 3V @ 250μA | 14A Ta 75A Tc | 24nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| TPCA8026(TE12L,Q,M | Toshiba Semiconductor and Storage | $4.90 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSIV | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 8-PowerVDFN | 8 | No | 45W | 1 | 15ns | 36 ns | 45A | 20V | 1.6W Ta 45W Tc | 30V | N-Channel | 4200pF @ 10V | 2.2m Ω @ 23A, 10V | 2.5V @ 1mA | 45A Ta | 113nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STD5N60DM2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ DM2 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-std5n60dm2-datasheets-6406.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 17 Weeks | ACTIVE (Last Updated: 8 months ago) | STD5N | 600V | 45W Tc | N-Channel | 375pF @ 100V | 1.55 Ω @ 1.75A, 10V | 5V @ 250μA | 3.5A Tc | 8.6nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RF4E070BNTR | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | 8-PowerUDFN | Lead Free | 6 | 10 Weeks | 8 | EAR99 | DUAL | NO LEAD | 260 | 1 | Single | 10 | 1 | S-PDSO-N6 | 6 ns | 8ns | 5 ns | 23 ns | 7A | 20V | SILICON | DRAIN | SWITCHING | 2W Ta | 7A | 0.04Ohm | 30V | N-Channel | 410pF @ 15V | 28.6m Ω @ 7A, 10V | 2V @ 250μA | 7A Ta | 8.9nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| FCD3400N80Z | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET® II | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-fcd3400n80z-datasheets-6212.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 4 Weeks | 260.37mg | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | not_compliant | 8541.29.00.95 | e3 | Tin (Sn) | 245 | Single | NOT SPECIFIED | 2A | 800V | 32W Tc | N-Channel | 400pF @ 100V | 3.4 Ω @ 1A, 10V | 4.5V @ 200μA | 2A Tc | 9.6nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDD3N50NZTM | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET-II™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/onsemiconductor-fdd3n50nztm-datasheets-6158.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 2 | 4 Weeks | 260.37mg | 3 | ACTIVE (Last Updated: 5 hours ago) | yes | EAR99 | No | e3 | Tin (Sn) | GULL WING | Single | 40W | 1 | FET General Purpose Power | R-PSSO-G2 | 10 ns | 15ns | 17 ns | 26 ns | 2.5A | 25V | SILICON | DRAIN | SWITCHING | 500V | 500V | 40W Tc | N-Channel | 280pF @ 25V | 2.5 Ω @ 1.25A, 10V | 5V @ 250μA | 2.5A Tc | 8nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||
| RFD14N05SM9A | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/onsemiconductor-rfd14n05sm9a-datasheets-6204.pdf | 50V | 14A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 2 | 8 Weeks | 260.37mg | No SVHC | 100mOhm | 3 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | No | e3 | Tin (Sn) | GULL WING | Single | 48W | 1 | FET General Purpose Power | R-PSSO-G2 | 14 ns | 26ns | 17 ns | 45 ns | 14mA | 20V | SILICON | DRAIN | SWITCHING | 4V | 48W Tc | TO-252AA | 50V | N-Channel | 570pF @ 25V | 4 V | 100m Ω @ 14A, 10V | 4V @ 250μA | 14A Tc | 40nC @ 20V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| ECH8310-TL-H | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/onsemiconductor-ech8310tlh-datasheets-6024.pdf | 8-SMD, Flat Lead | 2.9mm | 900μm | 2.3mm | Lead Free | 8 Weeks | 8 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | No | e6 | Tin/Bismuth (Sn/Bi) | Halogen Free | YES | 8 | Single | Other Transistors | 10 ns | 45ns | 87 ns | 134 ns | 9A | 20V | 30V | 1.5W Ta | 9A | P-Channel | 1400pF @ 10V | 17m Ω @ 4.5A, 10V | 9A Ta | 28nC @ 10V | 4V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK303000L | Panasonic Electronic Components | $9.15 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/panasonicelectroniccomponents-2sk303000l-datasheets-5943.pdf | 100V | 8A | U-G1 | Lead Free | U-G1 | 290pF | 8A | 100V | 1W Ta 15W Tc | N-Channel | 290pF @ 10V | 230mOhm @ 4A, 10V | 2.5V @ 1mA | 8A Tc | 230 mΩ | 4V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMT6015LSS-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/diodesincorporated-dmt6015lss13-datasheets-6035.pdf | 8-SOIC (0.154, 3.90mm Width) | 23 Weeks | 8 | yes | EAR99 | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 9.2A | 60V | 1.5W Ta | N-Channel | 1103pF @ 30V | 16m Ω @ 10A, 10V | 2.5V @ 250μA | 9.2A Ta | 18.9nC @ 30V | 4.5V 10V | ±16V |
