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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Number of Terminations | Factory Lead Time | REACH SVHC | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Source Url Status Check Date | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| BUK9E3R2-40E,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/nxpusainc-buk9e3r240e127-datasheets-6538.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | AVALANCHE RATED | not_compliant | e3 | Tin (Sn) | AEC-Q101; IEC-60134 | NO | SINGLE | 3 | 1 | FET General Purpose Power | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 234W Tc | 100A | 781A | 0.0032Ohm | 419 mJ | N-Channel | 9150pF @ 25V | 2.8m Ω @ 25A, 10V | 2.1V @ 1mA | 100A Tc | 69.5nC @ 5V | 5V 10V | ±10V | ||||||||||||||||||||||||||||||||||||||
| BUK9C2R2-60EJ | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB | 60V | N-Channel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR024NPBF | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-irf9392pbf-datasheets-2264.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 55V | 45W Tc | N-Channel | 370pF @ 25V | 75mOhm @ 10A, 10V | 4V @ 250μA | 17A Tc | 20nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK7Y25-80E/GFX | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | SC-100, SOT-669 | 80V | 95W Tc | N-Channel | 1800pF @ 25V | 25m Ω @ 10A, 10V | 4V @ 1mA | 39A Tc | 25.9nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NP82N06NLG-S18-AY | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-np82n06nlgs18ay-datasheets-6542.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | TO-262 | 60V | 1.8W Ta 143W Tc | N-Channel | 8.55pF @ 25V | 7.4mOhm @ 41A, 10V | 2.5V @ 250μA | 82A Tc | 160nC @ 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK7C4R5-100EJ | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB | 100V | N-Channel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PHB153NQ08LT,118 | NXP USA Inc. | $0.43 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | https://pdf.utmel.com/r/datasheets/nxpusainc-phb153nq08lt118-datasheets-6544.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | LOGIC LEVEL COMPATIBLE | unknown | YES | SINGLE | GULL WING | 3 | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 75V | 75V | 300W Tc | 75A | 240A | 0.0066Ohm | 560 mJ | N-Channel | 8770pF @ 25V | 5.5m Ω @ 25A, 10V | 2V @ 1mA | 75A Tc | 95nC @ 5V | 4.5V 10V | ±15V | ||||||||||||||||||||||||||||||||||||||
| CPH6350-TL-E | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-cph3456tlh-datasheets-5034.pdf | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUZ32 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-buz21-datasheets-0561.pdf | TO-220-3 | 3 | no | unknown | e3 | MATTE TIN | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 200V | 200V | 75W Tc | TO-220AB | 9.5A | 38A | 0.4Ohm | N-Channel | 530pF @ 25V | 400m Ω @ 6A, 10V | 4V @ 1mA | 9.5A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| CMF20120D | Cree/Wolfspeed | $2.77 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Z-FET™ | Through Hole | Through Hole | -55°C~135°C TJ | Tube | 1 (Unlimited) | 135°C | -55°C | SiCFET (Silicon Carbide) | RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/creewolfspeed-cmf20120d-datasheets-6523.pdf | TO-247-3 | 16.13mm | 21.1mm | 5.21mm | 10 Weeks | Unknown | 3 | No | Single | 150W | 1 | TO-247-3 | 1.915nF | 13 ns | 38ns | 24 ns | 40 ns | 42A | 25V | 1200V | 2.5V | 215W Tc | 80mOhm | 1.2kV | N-Channel | 1915pF @ 800V | 2.5 V | 110mOhm @ 20A, 20V | 4V @ 1mA | 42A Tc | 90.8nC @ 20V | 110 mΩ | 20V | +25V, -5V | |||||||||||||||||||||||||||||||||
| BUK6510-75C,127 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2010 | /files/nxpusainc-buk651075c127-datasheets-6526.pdf | TO-220-3 | 3 | 2013-06-14 00:00:00 | 75V | 158W Tc | N-Channel | 5251pF @ 25V | 10.4m Ω @ 25A, 10V | 2.8V @ 1mA | 77A Tc | 81nC @ 10V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK9E4R9-60E,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | AVALANCHE RATED | not_compliant | e3 | Tin (Sn) | AEC-Q101; IEC-60134 | NO | SINGLE | 3 | 1 | FET General Purpose Power | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 234W Tc | 100A | 590A | 0.0049Ohm | 273 mJ | N-Channel | 9710pF @ 25V | 4.5m Ω @ 25A, 10V | 2.1V @ 1mA | 100A Tc | 65nC @ 5V | 5V 10V | ±10V | |||||||||||||||||||||||||||||||||||||||
| NP82N04NDG-S18-AY | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-np82n04ndgs18ay-datasheets-6527.pdf | TO-262-3 Full Pack, I2Pak | TO-262-3 | 40V | 1.8W Ta 143W Tc | N-Channel | 9pF @ 25V | 4.2mOhm @ 41A, 10V | 2.5V @ 250μA | 82A Tc | 150nC @ 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK754R7-60E,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | TO-220-3 | not_compliant | e3 | Tin (Sn) | NO | 3 | FET General Purpose Power | Single | 60V | 234W Tc | 100A | N-Channel | 6230pF @ 25V | 4.6m Ω @ 25A, 10V | 4V @ 1mA | 100A Tc | 82nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| HUF75307D3ST | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-hsp43220jc33-datasheets-5057.pdf | 2 | yes | unknown | e3 | MATTE TIN | YES | SINGLE | GULL WING | 260 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 55V | METAL-OXIDE SEMICONDUCTOR | TO-252AA | 15A | 0.09Ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK951R6-30E,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | TO-220-3 | 3 | AVALANCHE RATED | not_compliant | e3 | Tin (Sn) | AEC-Q101; IEC-60134 | NO | SINGLE | 3 | 1 | FET General Purpose Power | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 349W Tc | TO-220AB | 120A | 1400A | 0.0016Ohm | 1405 mJ | N-Channel | 16150pF @ 25V | 1.4m Ω @ 25A, 10V | 2.1V @ 1mA | 120A Tc | 113nC @ 5V | 5V 10V | ±10V | ||||||||||||||||||||||||||||||||||||||
| MCH3427-TL-E | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/rochesterelectronicsllc-mch6626tle-datasheets-2711.pdf | 3-SMD, Flat Lead | 3-MCPH | 20V | 1W Ta | N-Channel | 400pF @ 10V | 52mOhm @ 2A, 4V | 4A Ta | 6nC @ 4V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SCH1337-TL-H | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-sfm9110tf-datasheets-5082.pdf | SOT-563, SOT-666 | 6-SCH | 30V | 800mW Ta | P-Channel | 172pF @ 10V | 150mOhm @ 1A, 10V | 2A Ta | 3.9nC @ 10V | 4V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CMF10120D | Cree/Wolfspeed | $12.11 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Z-FET™ | Through Hole | Through Hole | -55°C~135°C TJ | Tube | 1 (Unlimited) | 135°C | -55°C | SiCFET (Silicon Carbide) | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/creewolfspeed-cmf10120d-datasheets-6476.pdf | TO-247-3 | 16.13mm | 21.1mm | 5.21mm | Unknown | 3 | No | Single | 152W | 1 | TO-247 | 928pF | 8.8 ns | 34ns | 21 ns | 38 ns | 24A | 25V | 1200V | 2.5V | 134W Tc | 160mOhm | 1.2kV | N-Channel | 928pF @ 800V | 2.5 V | 220mOhm @ 10A, 20V | 4V @ 500μA | 24A Tc | 47.1nC @ 20V | 220 mΩ | 20V | +25V, -5V | ||||||||||||||||||||||||||||||||||
| CA/JCOP/MF4K/4B-UZ | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK9Y7R8-80E,115 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | SC-100, SOT-669 | 80V | N-Channel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CPMF-1200-S080B | Cree/Wolfspeed |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Z-FET™ | Surface Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | SiCFET (Silicon Carbide) | https://pdf.utmel.com/r/datasheets/creewolfspeed-cpmf1200s080b-datasheets-6510.pdf | Die | 1200V | 313mW Tj | N-Channel | 1915pF @ 800V | 110m Ω @ 20A, 20V | 4V @ 1mA | 50A Tj | 90.8nC @ 20V | 20V | +25V, -5V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK952R8-60E,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/nxpusainc-buk952r860e127-datasheets-6479.pdf | TO-220-3 | not_compliant | e3 | Tin (Sn) | NO | 3 | FET General Purpose Power | Single | 60V | 349W Tc | 120A | N-Channel | 17450pF @ 25V | 2.6m Ω @ 25A, 10V | 2.1V @ 1mA | 120A Tc | 120nC @ 5V | 5V 10V | ±10V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK7C2R2-60EJ | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB | 60V | N-Channel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7807ZPBF | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-irf9910pbf-datasheets-5490.pdf | 8-SOIC (0.154, 3.90mm Width) | 8-SO | 30V | 2.5W Ta | N-Channel | 770pF @ 15V | 13.8mOhm @ 11A, 10V | 2.25V @ 250μA | 11A Ta | 11nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN7R0-100XS,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/nxpusainc-psmn7r0100xs127-datasheets-6513.pdf | TO-220-3 Full Pack, Isolated Tab | not_compliant | 3 | 2013-06-14 00:00:00 | 100V | 57.7W Tc | N-Channel | 6686pF @ 50V | 6.8m Ω @ 15A, 10V | 4V @ 1mA | 55A Tc | 121nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HUF75329P3 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UltraFET™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-huf75345p3-datasheets-4284.pdf | TO-220-3 | 3 | no | unknown | e0 | TIN LEAD | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 128W Tc | TO-220AB | 42A | 0.025Ohm | N-Channel | 1.06pF @ 25V | 24m Ω @ 49A, 10V | 4V @ 250μA | 49A Tc | 75nC @ 20V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IRFR7540PBF | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-irfw540atm-datasheets-6576.pdf | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7842PBF | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-irfd213-datasheets-6146.pdf | 8-SOIC (0.154, 3.90mm Width) | 8-SO | 40V | 2.5W Ta | N-Channel | 4.5pF @ 20V | 5mOhm @ 17A, 10V | 2.25V @ 250μA | 18A Ta | 50nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK752R7-60E,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | TO-220-3 | not_compliant | e3 | Tin (Sn) | NO | 3 | FET General Purpose Power | Single | 60V | 349W Tc | 120A | N-Channel | 11180pF @ 25V | 2.6m Ω @ 25A, 10V | 4V @ 1mA | 120A Tc | 158nC @ 10V | 10V | ±20V |
