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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Manufacturer Package Identifier | Reach Compliance Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Min Breakdown Voltage | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IPB60R060P7ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/infineontechnologies-ipb60r060p7atma1-datasheets-6240.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 4.7mm | 2 | 18 Weeks | EAR99 | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 1 | NOT SPECIFIED | 164W | 1 | 150°C | R-PSSO-G2 | 23 ns | 79 ns | 48A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 650V | 164W Tc | 0.06Ohm | 600V | N-Channel | 2895pF @ 400V | 60m Ω @ 15.9A, 10V | 4V @ 800μA | 48A Tc | 67nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| STB18NM80 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stf18nm80-datasheets-4627.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.75mm | 4.6mm | 10.4mm | Lead Free | 2 | 26 Weeks | No SVHC | 295mOhm | 3 | EAR99 | No | e3 | Matte Tin (Sn) - annealed | GULL WING | 245 | STB18N | 4 | Single | 30 | 190W | 1 | FET General Purpose Power | R-PSSO-G2 | 18 ns | 28ns | 50 ns | 96 ns | 17A | 30V | SILICON | SWITCHING | 4V | 190W Tc | 68A | 600 mJ | 800V | N-Channel | 2070pF @ 50V | 295m Ω @ 8.5A, 10V | 5V @ 250μA | 17A Tc | 70nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||
| STD105N10F7AG | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, STripFET™ F7 | Surface Mount | Surface Mount | -55°C~175°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-std105n10f7ag-datasheets-6418.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | ACTIVE (Last Updated: 8 months ago) | EAR99 | NOT SPECIFIED | STD10 | NOT SPECIFIED | FET General Purpose Power | 80A | Single | 100V | 120W Tc | N-Channel | 4369pF @ 50V | 8m Ω @ 40A, 10V | 4.5V @ 250μA | 80A Tc | 61nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STB43N65M5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, MDmesh™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stb43n65m5-datasheets-6471.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 4.83mm | Lead Free | 2 | ACTIVE (Last Updated: 8 months ago) | EAR99 | D2PAK-0079457-A2 | SINGLE | GULL WING | NOT SPECIFIED | STB43N | 1 | NOT SPECIFIED | 250W | 1 | 150°C | R-PSSO-G2 | 73 ns | 12 ns | 42A | 25V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 250W Tc | 0.063Ohm | 650 mJ | 650V | N-Channel | 4400pF @ 100V | 63m Ω @ 21A, 10V | 5V @ 250μA | 42A Tc | 100nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||
| STD95N2LH5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ V | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-std95n2lh5-datasheets-6479.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.6mm | 2.4mm | 6.2mm | Lead Free | 2 | No SVHC | 4.5mOhm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | e3 | Matte Tin (Sn) - annealed | GULL WING | 260 | STD95 | 3 | Single | 30 | 70W | 1 | FET General Purpose Power | R-PSSO-G2 | 7 ns | 38ns | 7 ns | 22 ns | 80A | 22V | 25V | SILICON | DRAIN | SWITCHING | 70W Tc | 25V | N-Channel | 1817pF @ 25V | 1 V | 4.5m Ω @ 40A, 10V | 1V @ 250μA | 80A Tc | 13.4nC @ 5V | 5V 10V | ±22V | |||||||||||||||||||||||||||||||||
| IRLML2803TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/infineontechnologies-irlml2803trpbf-datasheets-6495.pdf | 30V | 1.2A | TO-236-3, SC-59, SOT-23-3 | 3.0226mm | 1.12mm | 1.397mm | Lead Free | 3 | 12 Weeks | No SVHC | 250mOhm | 3 | EAR99 | HIGH RELIABILITY | Tin | No | Micro3 | e3 | DUAL | GULL WING | 1 | Single | 540mW | 1 | FET General Purpose Power | 150°C | 3.9 ns | 4ns | 1.7 ns | 9 ns | 1.2A | 20V | 30V | SILICON | SWITCHING | 1V | 540mW Ta | 30V | 30V | N-Channel | 85pF @ 25V | 1 V | 250m Ω @ 910mA, 10V | 1V @ 250μA | 1.2A Ta | 5nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||
| DMP3068L-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/diodesincorporated-dmp3068l13-datasheets-7462.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | 23 Weeks | EAR99 | e3 | Matte Tin (Sn) | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-G3 | 3.3A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 700mW Ta | 0.072Ohm | P-Channel | 708pF @ 15V | 72m Ω @ 4.2A, 10V | 1.3V @ 250μA | 3.3A Ta | 15.9nC @ 10V | 1.8V 10V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| STD16N65M5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ V | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-std16n65m5-datasheets-6390.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.6mm | 2.4mm | 6.2mm | Lead Free | 2 | 17 Weeks | No SVHC | 299mOhm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | ULTRA-LOW RESISTANCE | Tin | No | e3 | GULL WING | 260 | STD16 | 3 | Single | 30 | 90W | 1 | FET General Purpose Power | R-PSSO-G2 | 25 ns | 9ns | 7 ns | 30 ns | 12A | 25V | SILICON | DRAIN | SWITCHING | 4V | 90W Tc | 48A | 200 mJ | 650V | N-Channel | 1250pF @ 100V | 299m Ω @ 6A, 10V | 5V @ 250μA | 12A Tc | 45nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||
| AO3422 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | TO-236-3, SC-59, SOT-23-3 | 1.25mm | Lead Free | 3 | 18 Weeks | 3 | yes | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 3 | 1 | 1.25W | 1 | 150°C | 2.3 ns | 16.5 ns | 2.1A | 12V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 1.3V | 1.25W Ta | 55V | N-Channel | 300pF @ 25V | 160m Ω @ 2.1A, 4.5V | 2V @ 250μA | 2.1A Ta | 3.3nC @ 4.5V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||
| 2SK4065-E | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-2sk4043ls-datasheets-3453.pdf | TO-220-3, Short Tab | SMP | 75V | 1.65W Ta 90W Tc | N-Channel | 12200pF @ 20V | 6mOhm @ 50A, 10V | 100A Ta | 220nC @ 10V | 4V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFS23N20DTRLP | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irfb23n20dpbf-datasheets-4027.pdf | 200V | 24A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.826mm | 9.65mm | Contains Lead, Lead Free | 2 | 14 Weeks | No SVHC | 100mOhm | 3 | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 3.8W | 1 | R-PSSO-G2 | 14 ns | 32ns | 16 ns | 26 ns | 24A | 30V | 200V | SILICON | DRAIN | SWITCHING | 5.5V | 3.8W Ta 170W Tc | 96A | 250 mJ | 200V | N-Channel | 1960pF @ 25V | 5.5 V | 100m Ω @ 14A, 10V | 5.5V @ 250μA | 24A Tc | 86nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||
| IPL60R075CFD7AUMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ CFD7 | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/infineontechnologies-ipl60r075cfd7auma1-datasheets-6265.pdf | 4-PowerTSFN | 4 | 18 Weeks | EAR99 | not_compliant | e3 | Tin (Sn) | YES | SINGLE | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 1 | S-PSSO-N4 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 650V | 600V | 189W Tc | 33A | 129A | 0.075Ohm | 151 mJ | N-Channel | 2721pF @ 400V | 75m Ω @ 15.1A, 10V | 4.5V @ 760μA | 33A Tc | 67nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| NTP8G206NG | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | GaNFET (Gallium Nitride) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ntms4n01r2-datasheets-5186.pdf | TO-220-3 | TO-220-3 | 600V | 96W Tc | N-Channel | 760pF @ 480V | 180mOhm @ 11A, 8V | 2.6V @ 500μA | 17A Tc | 9.3nC @ 4.5V | 8V | ±18V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSC007N04LS6ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/infineontechnologies-bsc007n04ls6atma1-datasheets-6130.pdf | 8-PowerTDFN | 26 Weeks | 40V | 188W | N-Channel | 8400pF @ 20V | 0.7m Ω @ 50A, 10V | 2.3V @ 250μA | 100A | 94nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSC105N10LSFGATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/infineontechnologies-bsc105n10lsfgatma1-datasheets-6135.pdf | 8-PowerTDFN | Contains Lead | 5 | 16 Weeks | 8 | no | EAR99 | LOGIC LEVEL COMPATIBLE | Tin | not_compliant | e3 | Halogen Free | DUAL | FLAT | NOT SPECIFIED | 8 | NOT SPECIFIED | 156W | 1 | Not Qualified | R-PDSO-F5 | 26ns | 11.4A | 20V | 100V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 156W Tc | 360A | 377 mJ | N-Channel | 3900pF @ 50V | 10.5m Ω @ 50A, 10V | 2.4V @ 110μA | 11.4A Ta 90A Tc | 53nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IRFS7734TRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET®, StrongIRFET™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-irfs7734trlpbf-datasheets-6080.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 12 Weeks | 3.949996g | 3 | EAR99 | GULL WING | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | R-PSSO-G2 | 20 ns | 123ns | 100 ns | 124 ns | 183A | 20V | SILICON | DRAIN | SWITCHING | 290W Tc | 650A | 670 mJ | 75V | N-Channel | 10150pF @ 25V | 3.5m Ω @ 100A, 10V | 3.7V @ 250μA | 183A Tc | 270nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| 2SK3747 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C TJ | Tray | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-2sk3747-datasheets-6200.pdf | TO-3P-3 Full Pack | TO-3PML | 1500V | 3W Ta 50W Tc | N-Channel | 380pF @ 30V | 13Ohm @ 1A, 10V | 2A Ta | 37.5nC @ 10V | 10V | ±35V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLS3813TRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/infineontechnologies-irls3813trlpbf-datasheets-6057.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 12 Weeks | 3.949996g | 3 | EAR99 | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 195W | 32 ns | 202ns | 102 ns | 33 ns | 160A | 20V | 30V | 195W Tc | N-Channel | 8020pF @ 25V | 1.95m Ω @ 148A, 10V | 2.35V @ 150μA | 160A Tc | 83nC @ 4.5V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPDD60R190G7XTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ G7 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipdd60r190g7xtma1-datasheets-6091.pdf | 10-PowerSOP Module | 18 Weeks | NOT SPECIFIED | NOT SPECIFIED | 600V | 76W Tc | N-Channel | 718pF @ 400V | 190m Ω @ 4.2A, 10V | 4V @ 210μA | 13A Tc | 18nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB60R120P7ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/infineontechnologies-ipb60r120p7atma1-datasheets-6243.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 4.7mm | 2 | 18 Weeks | EAR99 | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 1 | NOT SPECIFIED | 95W | 1 | 150°C | R-PSSO-G2 | 21 ns | 81 ns | 26A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 650V | 95W Tc | 78A | 82 mJ | 600V | N-Channel | 1544pF @ 400V | 120m Ω @ 8.2A, 10V | 4V @ 410μA | 26A Tc | 36nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| 2SK3747-MG8 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-2sk3747-datasheets-6200.pdf | TO-3P-3 Full Pack | TO-3PML | 1500V | N-Channel | 380pF @ 30V | 13Ohm @ 1A, 10V | 2A Ta | 37.5nC @ 10V | 10V | ±35V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SPB21N50C3ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/infineontechnologies-spb21n50c3atma1-datasheets-6259.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | no | EAR99 | AVALANCHE RATED, HIGH VOLTAGE | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 560V | 500V | 208W Tc | 21A | 63A | 0.19Ohm | 690 mJ | N-Channel | 2400pF @ 25V | 190m Ω @ 13.1A, 10V | 3.9V @ 1mA | 21A Tc | 95nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| FDS6681Z | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/onsemiconductor-fds6681z-datasheets-6291.pdf | -30V | -20A | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.75mm | 4mm | Lead Free | 8 | 18 Weeks | 130mg | No SVHC | 4.6MOhm | 8 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | Tin | No | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | GULL WING | 1 | Single | 2.5W | 1 | Other Transistors | 150°C | 20 ns | 9ns | 380 ns | 660 ns | -20A | 25V | 30V | SILICON | SWITCHING | -1.8V | 2.5W Ta | -30V | P-Channel | 7540pF @ 15V | 1.8 V | 4.6m Ω @ 20A, 10V | 3V @ 250μA | 20A Ta | 260nC @ 10V | 4.5V 10V | ±25V | ||||||||||||||||||||||||||||
| IRLS4030TRL7PP | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/infineontechnologies-irls4030trl7pp-datasheets-6230.pdf | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB | 6 | 12 Weeks | No SVHC | 7 | yes | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | 370W | 1 | R-PSSO-G6 | 53 ns | 160ns | 87 ns | 110 ns | 190A | 16V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | P-CHANNEL | 2.5V | 370W Tc | 0.0039Ohm | 320 mJ | 100V | N-Channel | 11490pF @ 50V | 1 V | 3.9m Ω @ 110A, 10V | 2.5V @ 250μA | 190A Tc | 140nC @ 4.5V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||
| 2SK4221 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C TJ | Tray | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-2sk4222-datasheets-7744.pdf | TO-3P-3, SC-65-3 | TO-3PB | 500V | 2.5W Ta 220W Tc | N-Channel | 2250pF @ 30V | 240mOhm @ 13A, 10V | 26A Ta | 87nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB65R190C7ATMA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ C7 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb65r190c7atma2-datasheets-5928.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 18 Weeks | YES | SINGLE | GULL WING | 260 | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 650V | 650V | 72W Tc | 13A | 49A | 0.19Ohm | 57 mJ | N-Channel | 1150pF @ 400V | 190m Ω @ 5.7A, 10V | 4V @ 290μA | 13A Tc | 23nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB47N10S33ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb47n10s33atma1-datasheets-5708.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | AVALANCHE RATED | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | 100V | 100V | 175W Tc | 47A | 188A | 0.033Ohm | 400 mJ | N-Channel | 2500pF @ 25V | 33m Ω @ 33A, 10V | 4V @ 2mA | 47A Tc | 105nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IRF6216TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/infineontechnologies-irf6216trpbf-datasheets-4195.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.75mm | 3.9878mm | Lead Free | 8 | 14 Weeks | No SVHC | 240mOhm | 8 | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 1 | Single | 30 | 2.5W | 1 | 150°C | 18 ns | 15ns | 26 ns | 33 ns | -2.2A | 20V | 150V | SILICON | SWITCHING | -5V | 2.5W Ta | 120 ns | -150V | P-Channel | 1280pF @ 25V | 5 V | 240m Ω @ 1.3A, 10V | 5V @ 250μA | 2.2A Ta | 49nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| IRFS3307TRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/infineontechnologies-irfs3307trlpbf-datasheets-6111.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.572mm | 9.65mm | Lead Free | 2 | 15 Weeks | 6.3MOhm | 3 | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 200W | 1 | FET General Purpose Power | R-PSSO-G2 | 26 ns | 120ns | 63 ns | 51 ns | 120A | 20V | SILICON | DRAIN | SWITCHING | 200W Tc | 75A | 270 mJ | 75V | N-Channel | 5150pF @ 50V | 6.3m Ω @ 75A, 10V | 4V @ 150μA | 120A Tc | 180nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IPB60R180C7ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ C7 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb60r180c7atma1-datasheets-5881.pdf | TO-263-4, D2Pak (3 Leads + Tab), TO-263AA | 2 | 18 Weeks | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 650V | 600V | 68W Tc | TO-263AB | 13A | 45A | 0.18Ohm | 53 mJ | N-Channel | 1080pF @ 400V | 130m Ω @ 5.3A, 10V | 4V @ 260μA | 13A Tc | 24nC @ 10V | 10V | ±20V |
