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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Capacitance | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IXFH7N90Q | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | /files/ixys-ixfh7n90q-datasheets-4153.pdf | TO-247-3 | 3 | 3 | yes | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 180W | 1 | FET General Purpose Power | Not Qualified | 15ns | 13 ns | 42 ns | 7A | 20V | SILICON | DRAIN | SWITCHING | 180W Tc | TO-247AD | 7A | 28A | 700 mJ | 900V | N-Channel | 2200pF @ 25V | 1.5 Ω @ 500mA, 10V | 5V @ 2.5mA | 7A Tc | 56nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IXTK170N10P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Polar™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/ixys-ixtt170n10p-datasheets-5567.pdf | TO-264-3, TO-264AA | Lead Free | 3 | 28 Weeks | yes | EAR99 | AVALANCHE RATED | unknown | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 714W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 50ns | 33 ns | 90 ns | 170A | 20V | SILICON | DRAIN | SWITCHING | 715W Tc | 350A | 0.009Ohm | 2000 mJ | 100V | N-Channel | 6000pF @ 25V | 9m Ω @ 500mA, 10V | 5V @ 250μA | 170A Tc | 198nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| IXFT60N50P3 | IXYS | $50.14 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, Polar3™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixfh60n50p3-datasheets-1724.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 16.05mm | 5.1mm | 14mm | Lead Free | 2 | 26 Weeks | 3 | AVALANCHE RATED | unknown | GULL WING | 4 | Single | 1.04kW | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 18 ns | 16ns | 8 ns | 37 ns | 60A | 30V | SILICON | DRAIN | SWITCHING | 1040W Tc | 150A | 0.1Ohm | 1000 mJ | 500V | N-Channel | 6250pF @ 25V | 100m Ω @ 30A, 10V | 5V @ 4mA | 60A Tc | 96nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||
| IXTK120N20P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHT™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtk120n20p-datasheets-4157.pdf | TO-264-3, TO-264AA | Lead Free | 3 | 28 Weeks | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 714W | 1 | Not Qualified | R-PSFM-T3 | 35ns | 31 ns | 100 ns | 120A | 20V | SILICON | DRAIN | SWITCHING | 714W Tc | 300A | 0.022Ohm | 2000 mJ | 200V | N-Channel | 6000pF @ 25V | 22m Ω @ 500mA, 10V | 5V @ 250μA | 120A Tc | 152nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| IXFT88N28P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ROHS3 Compliant | 14 Weeks | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FCHD040N65S3-F155 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET® III | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-fchd040n65s3f155-datasheets-4141.pdf | TO-247-3 | 9 Weeks | yes | e3 | Tin (Sn) | 650V | 417W Tc | N-Channel | 4740pF @ 400V | 40m Ω @ 32.5A, 10V | 4.5V @ 1.7mA | 65A Tc | 136nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTQ150N15P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHT™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/ixys-ixtq150n15p-datasheets-4142.pdf | TO-3P-3, SC-65-3 | 3 | 24 Weeks | No SVHC | 3 | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 714W | 1 | Not Qualified | 33ns | 28 ns | 100 ns | 150A | 20V | SILICON | DRAIN | SWITCHING | 5V | 714W Tc | 2500 mJ | 150V | N-Channel | 5800pF @ 25V | 13m Ω @ 500mA, 10V | 5V @ 250μA | 150A Tc | 190nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| IXFJ20N85X | IXYS | $10.60 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/ixys-ixfj20n85x-datasheets-4143.pdf | TO-247-3 | 19 Weeks | yes | 850V | 110W Tc | N-Channel | 1660pF @ 25V | 360m Ω @ 10A, 10V | 5.5V @ 2.5mA | 9.5A Tc | 63nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH100N25P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHT™ HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfh100n25p-datasheets-4144.pdf | TO-247-3 | 3 | 30 Weeks | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 600W | 1 | Not Qualified | R-PSFM-T3 | 26ns | 28 ns | 100 ns | 100A | 20V | SILICON | DRAIN | SWITCHING | 600W Tc | TO-247AD | 250A | 0.027Ohm | 2000 mJ | 250V | N-Channel | 6300pF @ 25V | 27m Ω @ 50A, 10V | 5V @ 4mA | 100A Tc | 185nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| IXFH50N50P3 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, Polar3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/ixys-ixft50n50p3-datasheets-3600.pdf | TO-247-3 | 16.26mm | 21.46mm | 5.3mm | 30 Weeks | 3 | EAR99 | Single | 25 ns | 53 ns | 50A | 30V | 500V | 960W Tc | N-Channel | 4335pF @ 25V | 120m Ω @ 25A, 10V | 5V @ 4mA | 50A Tc | 85nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IXTR62N15P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHT™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtr62n15p-datasheets-4107.pdf | ISOPLUS247™ | 3 | 26 Weeks | yes | EAR99 | AVALANCHE RATED, UL RECOGNIZED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSIP-T3 | 36A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 150V | 150V | 150W Tc | 150A | 0.045Ohm | 1000 mJ | N-Channel | 2250pF @ 25V | 45m Ω @ 31A, 10V | 5V @ 250μA | 36A Tc | 70nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IGLD60R190D1AUMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolGaN™ | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/infineontechnologies-igld60r190d1auma1-datasheets-4147.pdf | 8-LDFN Exposed Pad | 12 Weeks | 600V | 62.5W Tc | N-Channel | 157pF @ 400V | 1.6V @ 960μA | 10A Tc | -10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK31A60W,S4VX | Toshiba Semiconductor and Storage | $1.97 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DTMOSIV | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2013 | TO-220-3 Full Pack | 3nF | 16 Weeks | Single | 45W | TO-220SIS | 3nF | 32ns | 8.5 ns | 165 ns | 30.8A | 30V | 600V | 45W Tc | 73mOhm | 600V | N-Channel | 3000pF @ 300V | 88mOhm @ 15.4A, 10V | 3.7V @ 1.5mA | 30.8A Ta | 86nC @ 10V | Super Junction | 88 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
| STW70N65DM6 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ DM6 | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | TO-247-3 | 650V | 450W Tc | N-Channel | 4900pF @ 100V | 40m Ω @ 34A, 10V | 4.75V @ 250μA | 68A Tc | 125nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FCH041N65EFLN4 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FRFET®, SuperFET® II | Through Hole | -55°C~150°C TJ | Not Applicable | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/onsemiconductor-fch041n65efln4-datasheets-4113.pdf | TO-247-4 | 12 Weeks | yes | compliant | 650V | 595W Tc | N-Channel | 12560pF @ 100V | 41m Ω @ 38A, 10V | 5V @ 7.6mA | 76A Tc | 298nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPC50R045CPX1SA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ROHS3 Compliant | 39 Weeks | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FCH060N80-F155 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET® II | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-fch060n80f155-datasheets-4117.pdf | TO-247-3 | 12 Weeks | 6.39g | No SVHC | 3 | ACTIVE (Last Updated: 5 days ago) | yes | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 56A | 800V | 4.5V | 500W Tc | N-Channel | 14685pF @ 100V | 60m Ω @ 29A, 10V | 4.5V @ 5.8mA | 56A Tc | 350nC @ 10V | Super Junction | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IXFQ22N60P3 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, Polar3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfh22n60p3-datasheets-4386.pdf | TO-3P-3, SC-65-3 | 15.8mm | 20.3mm | 4.9mm | 3 | 26 Weeks | 3 | AVALANCHE RATED | unknown | 3 | Single | 500W | 1 | FET General Purpose Power | Not Qualified | 28 ns | 17ns | 19 ns | 54 ns | 22A | 30V | SILICON | DRAIN | SWITCHING | 500W Tc | 55A | 400 mJ | 600V | N-Channel | 2600pF @ 25V | 360m Ω @ 11A, 10V | 5V @ 1.5mA | 22A Tc | 38nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| IXTF200N10T | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMV™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixtf200n10t-datasheets-4126.pdf | i4-Pac™-5 | 3 | 28 Weeks | 5 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | 5 | NOT SPECIFIED | 200W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 31ns | 34 ns | 45 ns | 90A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 156W Tc | 0.007Ohm | 100V | N-Channel | 9400pF @ 25V | 7m Ω @ 50A, 10V | 4.5V @ 250μA | 90A Tc | 152nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||
| IXTQ100N25P | IXYS | $10.14 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/ixys-ixtt100n25p-datasheets-5585.pdf | TO-3P-3, SC-65-3 | Lead Free | 3 | 24 Weeks | No SVHC | 27MOhm | 3 | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 600W | 1 | Not Qualified | 26ns | 28 ns | 100 ns | 100A | 20V | SILICON | DRAIN | SWITCHING | 5V | 600W Tc | 250A | 2000 mJ | 250V | N-Channel | 6300pF @ 25V | 24m Ω @ 50A, 10V | 5V @ 250μA | 100A Tc | 185nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||
| IXFT52N50P2 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarHV™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfh52n50p2-datasheets-1534.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 2 | 26 Weeks | yes | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 960W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 52A | 30V | SILICON | DRAIN | SWITCHING | 960W Tc | 150A | 0.12Ohm | 1500 mJ | 500V | N-Channel | 6800pF @ 25V | 120m Ω @ 26A, 10V | 4.5V @ 4mA | 52A Tc | 113nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| R6035KNZC8 | ROHM Semiconductor | $11.44 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | TO-3P-3 Full Pack | 3 | 15 Weeks | EAR99 | not_compliant | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 600V | 600V | 102W Tc | 35A | 105A | 0.102Ohm | 796 mJ | N-Channel | 3000pF @ 25V | 102m Ω @ 18.1A, 10V | 5V @ 1mA | 35A Tc | 72nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IXFH230N10T | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/ixys-ixfh230n10t-datasheets-4101.pdf | TO-247-3 | Lead Free | 3 | yes | EAR99 | AVALANCHE RATED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | 3 | 650W | 1 | FET General Purpose Power | R-PSFM-T3 | 230A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 650W Tc | TO-247AD | 500A | 0.0047Ohm | N-Channel | 15300pF @ 25V | 4.7m Ω @ 500mA, 10V | 4.5V @ 1mA | 230A Tc | 250nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IXT-1-1N100S1-TR | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | SOIC | 1.5A | 1000V | N-Channel | 1.5A Tc | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK31J60W5,S1VQ | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DTMOSIV | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2013 | TO-3P-3, SC-65-3 | 3nF | 16 Weeks | Single | 230W | TO-3P(N) | 3nF | 32ns | 8.5 ns | 165 ns | 30.8A | 30V | 600V | 230W Tc | 73mOhm | 600V | N-Channel | 3000pF @ 300V | 88mOhm @ 15.4A, 10V | 3.7V @ 1.5mA | 30.8A Ta | 105nC @ 10V | Super Junction | 88 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||
| SCTH35N65G2V-7 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | 1 (Unlimited) | SiCFET (Silicon Carbide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-scth35n65g2v7-datasheets-4083.pdf | TO-263-8, D2Pak (7 Leads + Tab), TO-263CA | ACTIVE (Last Updated: 7 months ago) | NOT SPECIFIED | NOT SPECIFIED | 650V | 208W Tc | N-Channel | 1370pF @ 400V | 67m Ω @ 20A, 20V | 3.2V @ 1mA | 45A Tc | 73nC @ 20V | 18V 20V | +22V, -10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STW70N65DM6-4 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stw70n65dm64-datasheets-4105.pdf | TO-247-4 | 12 Weeks | compliant | 650V | 450W Tc | N-Channel | 4900pF @ 100V | 40m Ω @ 34A, 10V | 4.75V @ 250μA | 68A Tc | 125nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTJ4N150 | IXYS | $9.10 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/ixys-ixtj4n150-datasheets-4084.pdf | TO-247-3 | 3 | 24 Weeks | AVALANCHE RATED, UL RECOGNIZED | SINGLE | 1 | FET General Purpose Power | R-PSFM-T3 | 2.5A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 1500V | 1500V | 110W Tc | 12A | 6Ohm | 350 mJ | N-Channel | 1576pF @ 25V | 6 Ω @ 2A, 10V | 5V @ 250μA | 2.5A Tc | 44.5nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
| IXTT50P10 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixth50p10-datasheets-2723.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 2 | 24 Weeks | 55MOhm | 3 | yes | EAR99 | AVALANCHE RATED | unknown | e3 | PURE TIN | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 300W | 1 | Other Transistors | Not Qualified | R-PSSO-G2 | 39ns | 38 ns | 86 ns | 50A | 20V | SILICON | DRAIN | SWITCHING | 100V | 300W Tc | 200A | -100V | P-Channel | 4350pF @ 25V | 55m Ω @ 25A, 10V | 5V @ 250μA | 50A Tc | 140nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||
| IXFQ90N20X3 | IXYS | $8.73 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixfp90n20x3-datasheets-4520.pdf | TO-3P-3, SC-65-3 | 19 Weeks | 200V | 390W Tc | N-Channel | 5420pF @ 25V | 12.8m Ω @ 45A, 10V | 4.5V @ 1.5mA | 90A Tc | 78nC @ 10V | 10V | ±20V |
