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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Source Url Status Check Date | Supplier Device Package | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| BUK9E04-30B,127 | NXP USA Inc. | $10.63 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | EAR99 | 8541.29.00.75 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 254W Tc | 75A | 732A | 0.0044Ohm | 1300 mJ | N-Channel | 6526pF @ 25V | 3m Ω @ 25A, 10V | 2V @ 1mA | 75A Tc | 56nC @ 5V | 4.5V 10V | ±15V | |||||||||||||||||||||||||||||||||||||
| PH9930L,115 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | https://pdf.utmel.com/r/datasheets/nxpusainc-ph9930l115-datasheets-6656.pdf | SC-100, SOT-669 | 4 | EAR99 | LOW CONDUCTION LOSS | not_compliant | e3 | Matte Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G4 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 62.5W Tc | MO-235 | 63A | 214A | 0.0135Ohm | 53 mJ | N-Channel | 1565pF @ 12V | 9.9m Ω @ 25A, 10V | 2.15V @ 1mA | 63A Tc | 13.3nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| PH4025L,115 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | https://pdf.utmel.com/r/datasheets/nxpusainc-ph4025l115-datasheets-6661.pdf | SC-100, SOT-669 | 4 | EAR99 | LOW CONDUCTION LOSS | not_compliant | e3 | Matte Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G4 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 25V | 25V | 46.4W Tc | MO-235 | 99A | 300A | 0.0062Ohm | 150 mJ | N-Channel | 2601pF @ 12V | 4m Ω @ 25A, 10V | 2.15V @ 1mA | 99A Tc | 21.3nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||
| PSMN3R8-30LL,115 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/nxpusainc-psmn3r830ll115-datasheets-6582.pdf | 8-VDFN Exposed Pad | YES | 8 | FET General Purpose Power | Single | 30V | 69W Tc | 40A | N-Channel | 2085pF @ 15V | 3.7m Ω @ 10A, 10V | 2.15V @ 1mA | 40A Tc | 38nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN008-75P,127 | NXP USA Inc. | $3.77 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | https://pdf.utmel.com/r/datasheets/nxpusainc-psmn00875p127-datasheets-6669.pdf | TO-220-3 | 3 | EAR99 | unknown | e3 | Matte Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 2013-06-14 00:00:00 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 75V | 75V | 230W Tc | TO-220AB | 75A | 240A | 0.0085Ohm | 395 mJ | N-Channel | 5260pF @ 25V | 8.5m Ω @ 25A, 10V | 4V @ 1mA | 75A Tc | 122.8nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| PH5525L,115 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/nxpusainc-ph5525l115-datasheets-6674.pdf | SC-100, SOT-669 | 4 | EAR99 | not_compliant | e3 | Matte Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G4 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 25V | 25V | 62.5W Tc | MO-235 | 81.7A | 300A | 0.0082Ohm | 100 mJ | N-Channel | 2150pF @ 12V | 5.5m Ω @ 25A, 10V | 2.15V @ 1mA | 81.7A Tc | 16.6nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| BUK9618-55A,118 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | https://pdf.utmel.com/r/datasheets/nxpusainc-buk961855a118-datasheets-6667.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | not_compliant | 8541.29.00.75 | e3 | Tin (Sn) | YES | SINGLE | GULL WING | 260 | 3 | 40 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 136W Tc | 61A | 246A | 0.019Ohm | 127 mJ | N-Channel | 2210pF @ 25V | 16m Ω @ 25A, 10V | 2V @ 1mA | 61A Tc | 34nC @ 5V | 4.5V 10V | ±15V | |||||||||||||||||||||||||||||||||||
| PSMN7R0-40LS,115 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | 8-VDFN Exposed Pad | YES | 8 | FET General Purpose Power | Single | 40V | 65W Tc | 40A | N-Channel | 1286pF @ 12V | 7m Ω @ 10A, 10V | 4V @ 1mA | 40A Tc | 21.4nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK9607-30B,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 2011 | https://pdf.utmel.com/r/datasheets/nexperiausainc-buk960730b118-datasheets-6357.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 16 Weeks | EAR99 | not_compliant | 8541.29.00.75 | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 157W Tc | 108A | 435A | 0.007Ohm | 327 mJ | N-Channel | 3373pF @ 25V | 5m Ω @ 25A, 10V | 2V @ 1mA | 75A Tc | 32nC @ 5V | 4.5V 10V | ±15V | |||||||||||||||||||||||||||||||||||
| BUK7109-75AIE,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | /files/nexperiausainc-buk710975aie118-datasheets-6497.pdf | TO-263-5, D2Pak (4 Leads + Tab), TO-263BB | 4 | 5 | EAR99 | Tin | No | e3 | YES | GULL WING | 5 | Single | 272W | 1 | FET General Purpose Power | R-PSSO-G4 | 35 ns | 108ns | 100 ns | 185 ns | 120A | 20V | 75V | SILICON | DRAIN | SWITCHING | 272W Tc | 480A | 0.009Ohm | 739 mJ | 75V | N-Channel | 4700pF @ 25V | 9m Ω @ 50A, 10V | 4V @ 1mA | 75A Tc | 121nC @ 10V | Current Sensing | 10V | ±20V | ||||||||||||||||||||||||||||||||
| BSH121,135 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -65°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | /files/nexperiausainc-bsh121135-datasheets-6575.pdf | SC-70, SOT-323 | 3 | 3 | EAR99 | 8541.29.00.75 | e3 | Tin (Sn) | YES | DUAL | GULL WING | 260 | 3 | 40 | 700mW | 1 | FET General Purpose Power | Not Qualified | 300mA | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 75V | 55V | 700mW Tc | 4Ohm | 10 pF | N-Channel | 40pF @ 10V | 4 Ω @ 500mA, 4.5V | 1.3V @ 1mA | 300mA Ta | 1nC @ 8V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||
| PSMN023-80LS,115 | NXP USA Inc. | $1.93 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | 8-VDFN Exposed Pad | YES | 8 | FET General Purpose Power | Single | 80V | 65W Tc | 34A | N-Channel | 1295pF @ 40V | 23m Ω @ 10A, 10V | 4V @ 1mA | 34A Tc | 21nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PHT6N06T,135 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | TO-261-4, TO-261AA | 4 | EAR99 | ESD PROTECTED | 8541.29.00.75 | e3 | Tin (Sn) | YES | DUAL | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PDSO-G4 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 8.3W Tc | 5.5A | 22A | 0.15Ohm | 15 mJ | N-Channel | 175pF @ 25V | 150m Ω @ 5A, 10V | 4V @ 1mA | 5.5A Tc | 5.6nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| 2N7002BKT,115 | NXP USA Inc. | $0.02 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/nxpusainc-2n7002bkt115-datasheets-6570.pdf | SC-75, SOT-416 | e3 | Tin (Sn) | YES | 3 | FET General Purpose Power | Single | 60V | 260mW Ta | 0.29A | N-Channel | 50pF @ 10V | 1.6 Ω @ 500mA, 10V | 2.1V @ 250μA | 290mA Ta | 0.6nC @ 4.5V | 5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK7109-75ATE,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | https://pdf.utmel.com/r/datasheets/nexperiausainc-buk710975ate118-datasheets-6508.pdf | TO-263-5, D2Pak (4 Leads + Tab), TO-263BB | 4 | 5 | EAR99 | Tin | No | e3 | YES | GULL WING | 5 | Single | 272W | 1 | FET General Purpose Power | R-PSSO-G4 | 35 ns | 108ns | 100 ns | 185 ns | 120A | 20V | 75V | SILICON | DRAIN | SWITCHING | 272W Tc | 480A | 0.009Ohm | 739 mJ | 75V | N-Channel | 4700pF @ 25V | 9m Ω @ 50A, 10V | 4V @ 1mA | 75A Tc | 121nC @ 10V | Temperature Sensing Diode | 10V | ±20V | |||||||||||||||||||||||||||||||||
| BUK7614-55A,118 | NXP USA Inc. | $0.40 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1999 | https://pdf.utmel.com/r/datasheets/nxpusainc-buk761455a118-datasheets-6489.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | not_compliant | 8541.29.00.75 | e3 | Tin (Sn) | YES | SINGLE | GULL WING | 260 | 3 | 40 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 166W Tc | 73A | 266A | 0.014Ohm | 125 mJ | N-Channel | 2464pF @ 25V | 14m Ω @ 25A, 10V | 4V @ 1mA | 73A Tc | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| PMV22EN,215 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | /files/nxpusainc-pmv22en215-datasheets-6420.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | 2013-06-14 00:00:00 | 30V | 510mW Ta | N-Channel | 480pF @ 15V | 22m Ω @ 5.2A, 10V | 2.5V @ 250μA | 5.2A Ta | 13nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK754R3-75C,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/nxpusainc-buk754r375c127-datasheets-6505.pdf | TO-220-3 | unknown | 3 | 2013-06-14 00:00:00 | 75V | 333W Tc | N-Channel | 11659pF @ 25V | 4.3m Ω @ 25A, 10V | 4V @ 1mA | 100A Tc | 142nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PMZ250UN,315 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | /files/nexperiausainc-pmz250un315-datasheets-6532.pdf | SC-101, SOT-883 | 1.02mm | 470μm | 620μm | Lead Free | 3 | 4.535924g | No SVHC | 300MOhm | 3 | EAR99 | No | e3 | Tin (Sn) | YES | BOTTOM | 260 | 3 | Single | 30 | 2.5W | 1 | 4.5 ns | 10ns | 5 ns | 18.5 ns | 2.28A | 8V | 20V | SILICON | DRAIN | SWITCHING | 700mV | 2.5W Tc | 4.56A | 20V | N-Channel | 45pF @ 20V | 300m Ω @ 200mA, 4.5V | 950mV @ 250μA | 2.28A Tc | 0.89nC @ 4.5V | 1.5V 4.5V | ±8V | |||||||||||||||||||||||||||
| BUK7105-40AIE,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | /files/nexperiausainc-buk710540aie118-datasheets-6536.pdf | TO-263-5, D2Pak (4 Leads + Tab), TO-263BB | 4 | 5 | EAR99 | Tin | No | e3 | YES | GULL WING | 5 | Single | 272W | 1 | FET General Purpose Power | R-PSSO-G4 | 35 ns | 115ns | 110 ns | 155 ns | 155A | 20V | 40V | SILICON | DRAIN | SWITCHING | 272W Tc | 620A | 40V | N-Channel | 5000pF @ 25V | 5m Ω @ 50A, 10V | 4V @ 1mA | 75A Tc | 127nC @ 10V | Current Sensing | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| 2N7002E,215 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2006 | /files/nexperiausainc-2n7002e215-datasheets-6483.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | TO-236AB | 385mA | 60V | 830mW Ta | 780mOhm | N-Channel | 50pF @ 10V | 3Ohm @ 500mA, 10V | 2.5V @ 250μA | 385mA Ta | 0.69nC @ 10V | 4.5V 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PMV117EN,215 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -65°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/nxpusainc-pmv117en215-datasheets-6549.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | EAR99 | 8541.29.00.75 | e3 | Tin (Sn) | YES | DUAL | GULL WING | 260 | 3 | 40 | 1 | FET General Purpose Power | Not Qualified | R-PDSO-G3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 830mW Tc | TO-236AB | 2.5A | 0.19Ohm | N-Channel | 147pF @ 10V | 117m Ω @ 500mA, 10V | 2V @ 1mA | 2.5A Tc | 4.6nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| PHP45NQ11T,127 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | /files/nexperiausainc-php45nq11t127-datasheets-6557.pdf | TO-220-3 | 3 | 20 Weeks | 3 | EAR99 | ULTRA LOW RESISTANCE, LOGIC LEVEL COMPATIBLE, AVALANCHE RATED | No | e3 | Tin (Sn) | NO | 3 | Single | 150W | 1 | FET General Purpose Power | 11.5 ns | 40ns | 45 ns | 40 ns | 47A | 20V | 105V | SILICON | DRAIN | SWITCHING | 150W Tc | TO-220AB | 0.025Ohm | 105V | N-Channel | 2930pF @ 25V | 25m Ω @ 25A, 10V | 4V @ 1mA | 47A Tc | 60nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| BUK7510-55AL,127 | NXP USA Inc. | $2.23 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/nxpusainc-buk751055al127-datasheets-6408.pdf | TO-220-3 | e3 | Tin (Sn) | NO | 3 | FET General Purpose Power | 2013-06-14 00:00:00 | Single | 55V | 300W Tc | 122A | N-Channel | 6280pF @ 25V | 10m Ω @ 25A, 10V | 4V @ 1mA | 75A Tc | 124nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| PMV20XN,215 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | TO-236-3, SC-59, SOT-23-3 | 3 | 2013-06-14 00:00:00 | 30V | 510mW Ta | N-Channel | 585pF @ 15V | 25m Ω @ 4.8A, 4.5V | 1.5V @ 250μA | 4.8A Ta | 10nC @ 4.5V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK7509-75A,127 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | https://pdf.utmel.com/r/datasheets/nexperiausainc-buk750975a127-datasheets-6446.pdf | TO-220-3 | 3 | EAR99 | compliant | 8541.29.00.75 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 75V | 75V | 230W Tc | TO-220AB | 75A | 440A | 0.009Ohm | 560 mJ | N-Channel | 6760pF @ 25V | 9m Ω @ 25A, 10V | 4V @ 1mA | 75A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| BUK7528-100A,127 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | /files/nexperiausainc-buk7528100a127-datasheets-6450.pdf | TO-220-3 | 3 | 3 | EAR99 | Tin | 8541.29.00.75 | e3 | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 166W | 1 | FET General Purpose Power | Not Qualified | 15 ns | 70ns | 45 ns | 83 ns | 45mA | 20V | SILICON | DRAIN | SWITCHING | 166W Tc | TO-220AB | 47A | 187A | 0.028Ohm | 45 mJ | 100V | N-Channel | 3100pF @ 25V | 28m Ω @ 25A, 10V | 4V @ 1mA | 47A Tc | 10V | ±20V | |||||||||||||||||||||||||||||||||
| BUK98150-55A,135 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/nexperiausainc-buk9815055acuf-datasheets-6521.pdf | TO-261-4, TO-261AA | 4 | EAR99 | 8541.29.00.75 | e3 | Tin (Sn) | YES | DUAL | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PDSO-G4 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 8W Tc | 5.5A | 22A | 0.161Ohm | 22 mJ | N-Channel | 320pF @ 25V | 137m Ω @ 5A, 10V | 2V @ 1mA | 5.5A Tc | 5.3nC @ 5V | 4.5V 10V | ±15V | ||||||||||||||||||||||||||||||||||||
| BUK9520-100A,127 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | /files/nexperiausainc-buk9520100a127-datasheets-6474.pdf | TO-220-3 | 3 | EAR99 | compliant | 8541.29.00.75 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 200W Tc | TO-220AB | 63A | 253A | 0.022Ohm | 420 mJ | N-Channel | 6385pF @ 25V | 19m Ω @ 25A, 10V | 2V @ 1mA | 63A Tc | 4.5V 10V | ±10V | ||||||||||||||||||||||||||||||||||||||
| PSMN9R0-30LL,115 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/nxpusainc-psmn9r030ll115-datasheets-6479.pdf | 8-VDFN Exposed Pad | YES | 8 | FET General Purpose Power | Single | 30V | 50W Tc | 21A | N-Channel | 1193pF @ 15V | 9m Ω @ 5A, 10V | 2.15V @ 1mA | 21A Tc | 20.6nC @ 10V | 4.5V 10V | ±20V |
