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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Number of Terminations | ECCN Code | Additional Feature | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Turn Off Time-Max (toff) | Turn On Time-Max (ton) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| R6020ANZFL1C8 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-r6020anz8u7c8-datasheets-5780.pdf | TO-3P-3 Full Pack | 600V | 120W Tc | N-Channel | 2.04nF @ 25V | 220m Ω @ 10A, 10V | 4.15V @ 1mA | 20A Ta | 65nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| R6025ANZFU7C8 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-r6025anzfl1c8-datasheets-5806.pdf | TO-3P-3 Full Pack | 600V | 150W Tc | N-Channel | 3.25nF @ 10V | 150m Ω @ 12.5A, 10V | 4.5V @ 1mA | 25A Tc | 88nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| SI3134KL3-TP | Micro Commercial Co |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/microcommercialco-si3134kl3tp-datasheets-5823.pdf | SC-101, SOT-883 | NOT SPECIFIED | NOT SPECIFIED | 20V | 100mW | N-Channel | 120pF @ 16V | 500m Ω @ 150mA, 4.5V | 1.1V @ 250μA | 750mA | 1.8V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||
| R6535ENZC17 | ROHM Semiconductor | $6.79 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-r6535enzc17-datasheets-5824.pdf | TO-3P-3 Full Pack | 650V | 102W Tc | N-Channel | 2.6nF @ 25V | 115m Ω @ 18.1A, 10V | 4V @ 1.21mA | 35A Tc | 110nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| CTLDM8002A-M621H TR | Central Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -65°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | https://pdf.utmel.com/r/datasheets/centralsemiconductorcorp-ctldm8002am621hbk-datasheets-5287.pdf | 6-XFDFN Exposed Pad | 6 | EAR99 | LOW THRESHOLD, LOGIC LEVEL COMPATIBLE | compliant | 8541.29.00.75 | YES | DUAL | NO LEAD | 260 | 6 | 10 | 1 | FET General Purpose Power | Not Qualified | R-PDSO-N6 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 50V | 50V | 1.6W Ta | 0.28A | 1.5A | P-Channel | 70pF @ 25V | 2.5 Ω @ 500mA, 10V | 2.5V @ 250μA | 280mA Ta | 0.72nC @ 4.5V | 5V 10V | 20V | ||||||||||||||
| R6535ENZC8 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-r6535enzc17-datasheets-5824.pdf | TO-3P-3 Full Pack | 3 | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 650V | 650V | 102W Tc | 35A | 105A | 0.115Ohm | 867 mJ | N-Channel | 2.6nF @ 25V | 115m Ω @ 18.1A, 10V | 4V @ 1.21mA | 35A Tc | 110nC @ 10V | 10V | ±20V | |||||||||||||||||||||
| BUK7608-55,118 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1998 | https://pdf.utmel.com/r/datasheets/nxpusainc-buk760855118-datasheets-5830.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | YES | SINGLE | GULL WING | 3 | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 187W Tc | 75A | 240A | 0.008Ohm | 440 pF | 500 mJ | N-Channel | 4500pF @ 25V | 210ns | 145ns | 8m Ω @ 25A, 10V | 4V @ 1mA | 75A Tc | 10V | ±16V | ||||||||||||||
| TPH3206LSGB | Transphorm |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | GaNFET (Gallium Nitride) | https://pdf.utmel.com/r/datasheets/transphorm-tph3206lsgb-datasheets-5802.pdf | 3-PowerDFN | 650V | 81W Tc | N-Channel | 720pF @ 480V | 180m Ω @ 10A, 8V | 2.6V @ 500μA | 16A Tc | 6.2nC @ 4.5V | 8V | ±18V | ||||||||||||||||||||||||||||||||||||||||
| BS108/01,126 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tape & Box (TB) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2001 | https://pdf.utmel.com/r/datasheets/nxpusainc-bs10801126-datasheets-5831.pdf | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 | 200V | 1W Ta | N-Channel | 120pF @ 25V | 5Ohm @ 100mA, 2.8V | 1.8V @ 1mA | 300mA Ta | 2.8V | ±20V | ||||||||||||||||||||||||||||||||||||
| TPH3206LDG-TR | Transphorm |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | GaNFET (Gallium Nitride) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/transphorm-tph3206ldgtr-datasheets-5777.pdf | 3-PowerDFN | NOT SPECIFIED | NOT SPECIFIED | 600V | 96W Tc | N-Channel | 760pF @ 480V | 180m Ω @ 11A, 8V | 2.6V @ 500μA | 17A Tc | 9.3nC @ 4.5V | 8V | ±18V | |||||||||||||||||||||||||||||||||||||
| R6020ANZ8U7C8 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-r6020anz8u7c8-datasheets-5780.pdf | TO-3P-3 Full Pack | 600V | 120W Tc | N-Channel | 2.04nF @ 25V | 220m Ω @ 10A, 10V | 4.15V @ 1mA | 20A Ta | 65nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| R6515ENZC8 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-r6515enzc17-datasheets-5768.pdf | TO-3P-3 Full Pack | 3 | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 650V | 650V | 60W Tc | 15A | 45A | 0.315Ohm | 284 mJ | N-Channel | 910pF @ 25V | 315m Ω @ 6.5A, 10V | 4V @ 430μA | 15A Tc | 40nC @ 10V | 10V | ±20V | |||||||||||||||||||||
| R6535KNZC8 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-r6535knzc17-datasheets-5745.pdf | TO-3P-3 Full Pack | 3 | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 650V | 650V | 102W Tc | 35A | 105A | 0.115Ohm | 867 mJ | N-Channel | 3nF @ 25V | 115m Ω @ 18.1A, 10V | 5V @ 1.21mA | 35A Tc | 72nC @ 10V | 10V | ±20V | |||||||||||||||||||||
| R6530KNZC8 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-r6530knzc17-datasheets-5759.pdf | TO-3P-3 Full Pack | 3 | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 650V | 650V | 86W Tc | 30A | 90A | 0.14Ohm | 730 mJ | N-Channel | 2.35nF @ 25V | 140m Ω @ 14.5A, 10V | 5V @ 960μA | 30A Tc | 56nC @ 10V | 10V | ±20V | |||||||||||||||||||||
| R6035ENZM12C8 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-r6035enzc17-datasheets-5760.pdf | TO-3P-3 Full Pack | 600V | 120W Tc | N-Channel | 2.72nF @ 25V | 102m Ω @ 18.1A, 10V | 4V @ 1mA | 35A Tc | 110nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| R6524KNZC8 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-r6524knzc17-datasheets-5744.pdf | TO-3P-3 Full Pack | 3 | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 650V | 650V | 74W Tc | 24A | 72A | 0.185Ohm | 654 mJ | N-Channel | 1.85nF @ 25V | 185m Ω @ 11.3A, 10V | 5V @ 750μA | 24A Tc | 45nC @ 10V | 10V | ±20V | |||||||||||||||||||||
| R6024ENZM12C8 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-r6024enzc17-datasheets-5721.pdf | TO-3P-3 Full Pack | 600V | 120W Tc | N-Channel | 1.65nF @ 25V | 165m Ω @ 11.3A, 10V | 4V @ 1mA | 24A Tc | 70nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IRF540,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1999 | https://pdf.utmel.com/r/datasheets/nxpusainc-irf540127-datasheets-5794.pdf | TO-220-3 | 3 | EAR99 | unknown | e3 | Matte Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 100W Tc | TO-220AB | 23A | 92A | 0.077Ohm | 230 mJ | N-Channel | 1187pF @ 25V | 77m Ω @ 17A, 10V | 4V @ 1mA | 23A Tc | 65nC @ 10V | 10V | ±20V | ||||||||||
| R6520KNZC8 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/rohmsemiconductor-r6520knzc17-datasheets-5775.pdf | TO-3P-3 Full Pack | 3 | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 650V | 650V | 68W Tc | 20A | 60A | 0.205Ohm | 444 mJ | N-Channel | 1.55nF @ 25V | 205m Ω @ 9.5A, 10V | 5V @ 630μA | 20A Tc | 40nC @ 10V | 10V | ±20V | |||||||||||||||||||||
| SI3139KL3-TP | Micro Commercial Co | $0.11 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/microcommercialco-si3139kl3tp-datasheets-5797.pdf | SC-101, SOT-883 | NOT SPECIFIED | NOT SPECIFIED | 20V | 100mW | P-Channel | 113pF @ 16V | 500m Ω @ 150mA, 4.5V | 1.1V @ 250μA | 660mA | 1.8V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||
| IRF640,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1999 | https://pdf.utmel.com/r/datasheets/nxpusainc-irf640127-datasheets-5798.pdf | TO-220-3 | 3 | EAR99 | unknown | e3 | Matte Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 200V | 200V | 136W Tc | TO-220AB | 16A | 64A | 0.18Ohm | 580 mJ | N-Channel | 1850pF @ 25V | 180m Ω @ 8A, 10V | 4V @ 1mA | 16A Tc | 63nC @ 10V | 10V | ±20V | ||||||||||
| IRF530N,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1999 | /files/nxpusainc-irf530n127-datasheets-5799.pdf | TO-220-3 | 3 | EAR99 | unknown | e3 | Matte Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 79W Tc | TO-220AB | 17A | 68A | 0.11Ohm | 150 mJ | N-Channel | 633pF @ 25V | 110m Ω @ 9A, 10V | 4V @ 1mA | 17A Tc | 40nC @ 10V | 10V | ±20V | ||||||||||
| R6530ENZC8 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-r6530enzc17-datasheets-5763.pdf | TO-3P-3 Full Pack | 3 | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 650V | 650V | 86W Tc | 30A | 90A | 0.14Ohm | 730 mJ | N-Channel | 2.1nF @ 25V | 140m Ω @ 14.5A, 10V | 4V @ 960μA | 30A Tc | 90nC @ 10V | 10V | ±20V | |||||||||||||||||||||
| R6520KNZC17 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-r6520knzc17-datasheets-5775.pdf | TO-3P-3 Full Pack | 650V | 68W Tc | N-Channel | 1.55nF @ 25V | 205m Ω @ 9.5A, 10V | 5V @ 630μA | 20A Tc | 40nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| TP65H150G4LSG | Transphorm |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| R6021ANZC8 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| R6035ENZC17 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C TJ | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-r6035enzc17-datasheets-5760.pdf | TO-3P-3 Full Pack | 600V | 120W Tc | N-Channel | 2720pF @ 25V | 102m Ω @ 18.1A, 10V | 4V @ 1mA | 35A Tc | 110nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| RJK5033DPD-01#J2 | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB80N04S403JEATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS®-T2 | Surface Mount | -55°C~155°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | compliant | 40V | 94W Tc | N-Channel | 5260pF @ 25V | 3.7m Ω @ 80A, 10V | 4V @ 53μA | 80A Tc | 66nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| R6530ENZC17 | ROHM Semiconductor | $5.41 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-r6530enzc17-datasheets-5763.pdf | TO-3P-3 Full Pack | 650V | 86W Tc | N-Channel | 2.1nF @ 25V | 140m Ω @ 14.5A, 10V | 4V @ 960μA | 30A Tc | 90nC @ 10V | 10V | ±20V |
