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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IXFT15N100Q | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixft15n100q-datasheets-7380.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 2 | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 360W | 1 | Not Qualified | R-PSSO-G2 | 27ns | 14 ns | 67 ns | 15A | 20V | SILICON | DRAIN | 1000V | 360W Tc | 60A | 0.725Ohm | 1500 mJ | 1kV | N-Channel | 4500pF @ 25V | 700m Ω @ 500mA, 10V | 5V @ 4mA | 15A Tc | 170nC @ 5V | 10V | ±20V | ||||||||||||||||||||||||||||
| IXFR52N30Q | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | ISOPLUS247™ | 300V | N-Channel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB14N03LA G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb14n03lag-datasheets-7382.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | LOGIC LEVEL COMPATIBLE | compliant | e3 | MATTE TIN | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 25V | 25V | 46W Tc | 30A | 210A | 0.0136Ohm | 60 mJ | N-Channel | 1043pF @ 15V | 13.6m Ω @ 30A, 10V | 2V @ 20μA | 30A Tc | 8.3nC @ 5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||
| IXFV14N80P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixft14n80p-datasheets-3875.pdf | TO-220-3, Short Tab | 3 | 220 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 400W | 1 | Not Qualified | R-PSIP-T3 | 62 ns | 14A | SILICON | DRAIN | SWITCHING | 400W Tc | 0.72Ohm | 500 mJ | 800V | N-Channel | 3900pF @ 25V | 720m Ω @ 500mA, 10V | 5.5V @ 4mA | 14A Tc | 61nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||
| IXFT20N80Q | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2002 | https://pdf.utmel.com/r/datasheets/ixys-ixft20n80q-datasheets-7388.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 2 | yes | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | GULL WING | 4 | Single | 360W | 1 | FET General Purpose Power | R-PSSO-G2 | 27ns | 14 ns | 74 ns | 20A | 20V | SILICON | DRAIN | 360W Tc | 80A | 0.42Ohm | 800V | N-Channel | 5100pF @ 25V | 420m Ω @ 10A, 10V | 4.5V @ 4mA | 20A Tc | 200nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| IXFT26N60Q | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2002 | https://pdf.utmel.com/r/datasheets/ixys-ixft26n60q-datasheets-7390.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 2 | 8 Weeks | 250mOhm | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 360W | 1 | Not Qualified | R-PSSO-G2 | 32ns | 16 ns | 80 ns | 26A | 20V | SILICON | DRAIN | SWITCHING | 360W Tc | 104A | 1500 mJ | 600V | N-Channel | 5100pF @ 25V | 250m Ω @ 13A, 10V | 4.5V @ 4mA | 26A Tc | 200nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||
| IXFV14N80PS | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarHT™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixft14n80p-datasheets-3875.pdf | PLUS-220SMD | 2 | 220 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | GULL WING | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 400W | 1 | Not Qualified | R-PSSO-G2 | 62 ns | 14A | SILICON | DRAIN | SWITCHING | 400W Tc | 0.72Ohm | 500 mJ | 800V | N-Channel | 3900pF @ 25V | 720m Ω @ 500mA, 10V | 5.5V @ 4mA | 14A Tc | 61nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||
| IXFV20N80PS | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarHT™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfh20n80p-datasheets-5587.pdf | PLUS-220SMD | 2 | 3 | yes | AVALANCHE RATED | GULL WING | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 500W | 1 | Not Qualified | R-PSSO-G2 | 24ns | 24 ns | 85 ns | 20A | 30V | SILICON | DRAIN | SWITCHING | 500W Tc | 0.52Ohm | 1000 mJ | 800V | N-Channel | 4685pF @ 25V | 520m Ω @ 10A, 10V | 5V @ 4mA | 20A Tc | 86nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||
| IXFV12N80P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfq12n80p-datasheets-0104.pdf | TO-220-3, Short Tab | 3 | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 360W | 1 | Not Qualified | 26ns | 25 ns | 70 ns | 12A | 30V | SILICON | DRAIN | SWITCHING | 360W Tc | 0.85Ohm | 800 mJ | 800V | N-Channel | 2800pF @ 25V | 850m Ω @ 500mA, 10V | 5.5V @ 2.5mA | 12A Tc | 51nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||
| IXFR66N50Q2 | IXYS | $4.21 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixfr66n50q2-datasheets-7398.pdf | ISOPLUS247™ | Lead Free | 3 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 500W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 16ns | 10 ns | 60 ns | 50A | 30V | SILICON | ISOLATED | SWITCHING | 500W Tc | 264A | 0.085Ohm | 4000 mJ | 500V | N-Channel | 9125pF @ 25V | 85m Ω @ 33A, 10V | 5.5V @ 8mA | 50A Tc | 200nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||
| IXFR26N60Q | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfr26n60q-datasheets-7367.pdf | ISOPLUS247™ | 3 | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 310W | 1 | Not Qualified | 32ns | 15 ns | 80 ns | 23A | 20V | SILICON | ISOLATED | SWITCHING | 310W Tc | 92A | 0.25Ohm | 1500 mJ | 600V | N-Channel | 5100pF @ 25V | 250m Ω @ 13A, 10V | 4.5V @ 4mA | 23A Tc | 200nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||
| IXFQ26N50Q | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | TO-3P-3, SC-65-3 | 3 | yes | AVALANCHE RATED | e3 | PURE TIN | SINGLE | NOT SPECIFIED | 3 | 150°C | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | 26A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 500V | 500V | 104A | 0.2Ohm | 1500 mJ | N-Channel | 26A Tc | ||||||||||||||||||||||||||||||||||||||||||
| BSS126 E6327 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bss126e6906-datasheets-7116.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | EAR99 | compliant | 8541.21.00.95 | e3 | MATTE TIN | YES | DUAL | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PDSO-G3 | SILICON | SINGLE WITH BUILT-IN DIODE | 600V | 600V | 500mW Ta | 0.021A | 1.5 pF | N-Channel | 28pF @ 25V | 500 Ω @ 16mA, 10V | 1.6V @ 8μA | 21mA Ta | 2.1nC @ 5V | Depletion Mode | 0V 10V | ±20V | |||||||||||||||||||||||||||||||||
| IPB10N03LB | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb10n03lb-datasheets-7328.pdf | 30V | 50A | TO-263-4, D2Pak (3 Leads + Tab), TO-263AA | Contains Lead | 2 | EAR99 | LOGIC LEVEL COMPATIBLE | SINGLE | GULL WING | 260 | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 50A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 58W Tc | TO-263AB | 200A | 0.0096Ohm | 57 mJ | N-Channel | 1639pF @ 15V | 9.6m Ω @ 50A, 10V | 2V @ 20μA | 50A Tc | 13nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||
| BSP320S E6327 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bsp320se6433-datasheets-7095.pdf | TO-261-4, TO-261AA | 4 | EAR99 | YES | DUAL | GULL WING | 255 | 4 | NOT SPECIFIED | 1 | Not Qualified | R-PDSO-G4 | SILICON | SINGLE | 60V | 60V | 1.8W Ta | 2.9A | 0.12Ohm | N-Channel | 340pF @ 25V | 120m Ω @ 2.9A, 10V | 4V @ 20μA | 2.9A Ta | 12nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IPB80N06S3-07 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipi80n06s307-datasheets-1105.pdf | 55V | 80A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | EAR99 | AVALANCHE RATED | e3 | MATTE TIN | GULL WING | 260 | 4 | Single | 40 | 135W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 41ns | 33 ns | 34 ns | 80A | 20V | SILICON | DRAIN | 135W Tc | 0.0065Ohm | 55V | N-Channel | 7768pF @ 25V | 6.5m Ω @ 51A, 10V | 4V @ 80μA | 80A Tc | 170nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||
| BUZ73E3046XK | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 1999 | https://pdf.utmel.com/r/datasheets/infineontechnologies-buz73-datasheets-5368.pdf | TO-220-3 | 200V | 40W Tc | N-Channel | 530pF @ 25V | 400m Ω @ 4.5A, 10V | 4V @ 1mA | 7A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB11N03LA G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb11n03lag-datasheets-7343.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | LOGIC LEVEL COMPATIBLE | compliant | e3 | MATTE TIN | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 25V | 25V | 52W Tc | 30A | 210A | 0.0112Ohm | 80 mJ | N-Channel | 1358pF @ 15V | 11.2m Ω @ 30A, 10V | 2V @ 20μA | 30A Tc | 11nC @ 5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||
| IPD09N03LB G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ips09n03lbg-datasheets-1250.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | LOGIC LEVEL COMPATIBLE | compliant | e3 | MATTE TIN | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 58W Tc | TO-252AA | 50A | 200A | 0.0142Ohm | 57 mJ | N-Channel | 1600pF @ 15V | 9.1m Ω @ 50A, 10V | 2V @ 20μA | 50A Tc | 13nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||
| IPB10N03LB G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb10n03lb-datasheets-7328.pdf | TO-263-4, D2Pak (3 Leads + Tab), TO-263AA | 30V | 58W Tc | N-Channel | 1639pF @ 15V | 9.6m Ω @ 50A, 10V | 2V @ 20μA | 50A Tc | 13nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB100N06S3-03 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipi100n06s303-datasheets-1041.pdf | 55V | 100A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | EAR99 | AVALANCHE RATED | e3 | MATTE TIN | GULL WING | 260 | 4 | Single | 40 | 300W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 67ns | 60 ns | 77 ns | 100A | 20V | SILICON | DRAIN | 300W Tc | 400A | 0.003Ohm | 2390 mJ | 55V | N-Channel | 21620pF @ 25V | 3m Ω @ 80A, 10V | 4V @ 230μA | 100A Tc | 480nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||
| BSO104N03S | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | /files/infineontechnologies-bso104n03s-datasheets-7359.pdf | 30V | 13A | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 8 | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | e3 | MATTE TIN | DUAL | GULL WING | 260 | 8 | NOT SPECIFIED | 1.56W | 1 | FET General Purpose Power | Not Qualified | 5 ns | 4.2ns | 4.2 ns | 21 ns | 10A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 1.56W Ta | MS-012AA | 0.0097Ohm | 110 pF | 30V | N-Channel | 2130pF @ 15V | 9.7m Ω @ 13A, 10V | 2V @ 30μA | 10A Tc | 16nC @ 5V | 4.5V 10V | ±20V | |||||||||||||||||||||||
| IXFT16N90Q | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2002 | https://pdf.utmel.com/r/datasheets/ixys-ixfk16n90q-datasheets-0642.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 2 | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 360W | 1 | Not Qualified | R-PSSO-G2 | 24ns | 14 ns | 56 ns | 16A | 20V | SILICON | DRAIN | 360W Tc | 64A | 0.65Ohm | 1500 mJ | 900V | N-Channel | 4000pF @ 25V | 650m Ω @ 8A, 10V | 5V @ 4mA | 16A Tc | 170nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||
| IXFR26N50Q | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2001 | https://pdf.utmel.com/r/datasheets/ixys-ixfr26n50q-datasheets-7365.pdf | ISOPLUS247™ | 3 | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 250W | 1 | FET General Purpose Power | Not Qualified | 30ns | 16 ns | 55 ns | 24A | 20V | SILICON | ISOLATED | SWITCHING | 250W Tc | 104A | 0.2Ohm | 1500 mJ | 500V | N-Channel | 3900pF @ 25V | 200m Ω @ 13A, 10V | 4.5V @ 4mA | 24A Tc | 95nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||
| IPB04N03LB | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb04n03lb-datasheets-7307.pdf | 30V | 80A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | EAR99 | LOGIC LEVEL COMPATIBLE | SINGLE | GULL WING | 260 | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 80A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 107W Tc | 320A | 0.0051Ohm | 270 mJ | N-Channel | 5203pF @ 15V | 3.5m Ω @ 55A, 10V | 2V @ 70μA | 80A Tc | 40nC @ 5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||
| BTS244Z E3043 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TEMPFET® | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bts244ze3062a-datasheets-7234.pdf | TO-220-5 | 5 | AVALANCHE RATED | compliant | AEC-Q101 | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T5 | SILICON | SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR | DRAIN | SWITCHING | 55V | 55V | 170W Tc | 35A | 188A | 0.018Ohm | 1650 mJ | N-Channel | 2660pF @ 25V | 13m Ω @ 19A, 10V | 2V @ 130μA | 35A Tc | 130nC @ 10V | Temperature Sensing Diode | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||
| BUZ73L | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-buz73l-datasheets-7318.pdf | 200V | 7A | TO-220-3 | Lead Free | 3 | No SVHC | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | e3 | MATTE TIN | NOT SPECIFIED | Single | NOT SPECIFIED | 40W | 1 | FET General Purpose Power | Not Qualified | 60ns | 40 ns | 100 ns | 7A | 20V | SILICON | SWITCHING | 1.6V | 40W Tc | TO-220AB | 7A | 28A | 0.4Ohm | 120 mJ | 200V | N-Channel | 840pF @ 25V | 400m Ω @ 3.5A, 5V | 2V @ 1mA | 7A Tc | 5V | ±20V | ||||||||||||||||||||||||
| IPB13N03LB | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb13n03lbg-datasheets-2555.pdf | 30V | 30A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | yes | EAR99 | LOGIC LEVEL COMPATIBLE | e3 | MATTE TIN | SINGLE | GULL WING | 260 | 4 | 40 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 30A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 52W Tc | 120A | 0.0125Ohm | 64 mJ | N-Channel | 1355pF @ 15V | 12.5m Ω @ 30A, 10V | 2V @ 20μA | 30A Tc | 11nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||
| IPB06N03LB | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb06n03lb-datasheets-7267.pdf | 30V | 50A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | EAR99 | LOGIC LEVEL COMPATIBLE | e3 | MATTE TIN | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 50A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 83W Tc | 200A | 0.0063Ohm | 164 mJ | N-Channel | 2782pF @ 15V | 6.3m Ω @ 50A, 10V | 2V @ 40μA | 50A Tc | 22nC @ 5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||
| IXFV30N60P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfh30n60p-datasheets-3966.pdf | 600V | 30A | TO-220-3, Short Tab | Lead Free | 3 | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 500W | 1 | Not Qualified | 20ns | 25 ns | 80 ns | 30A | 30V | SILICON | DRAIN | SWITCHING | 500W Tc | 80A | 0.24Ohm | 1500 mJ | 600V | N-Channel | 4000pF @ 25V | 240m Ω @ 15A, 10V | 5V @ 4mA | 30A Tc | 82nC @ 10V | 10V | ±30V |
