Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Part Status Series Mount Mounting Type Operating Temperature Packaging Moisture Sensitivity Level (MSL) Technology Operating Mode RoHS Status Published Datasheet Voltage - Rated DC Current Rating Package / Case Lead Free Number of Terminations Weight Number of Pins Pbfree Code ECCN Code Reach Compliance Code HTS Code JESD-609 Code Terminal Finish Surface Mount Terminal Position Terminal Form Peak Reflow Temperature (Cel) Element Configuration Time@Peak Reflow Temperature-Max (s) Power Dissipation Number of Elements Subcategory Qualification Status JESD-30 Code Supplier Device Package Rise Time Fall Time (Typ) Turn-Off Delay Time Continuous Drain Current (ID) Gate to Source Voltage (Vgs) Transistor Element Material Configuration Case Connection Transistor Application Drain to Source Voltage (Vdss) DS Breakdown Voltage-Min Power Dissipation-Max JEDEC-95 Code Drain Current-Max (Abs) (ID) Drain-source On Resistance-Max Drain to Source Breakdown Voltage FET Type Input Capacitance (Ciss) (Max) @ Vds Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Current - Continuous Drain (Id) @ 25°C Gate Charge (Qg) (Max) @ Vgs Drive Voltage (Max Rds On,Min Rds On) Vgs (Max)
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0 0x0x0 download QFET® Through Hole -55°C~175°C TJ Tube 1 (Unlimited) MOSFET (Metal Oxide) 2004 https://pdf.utmel.com/r/datasheets/onsemiconductor-fqi11p06tu-datasheets-2605.pdf TO-262-3 Long Leads, I2Pak, TO-262AA I2PAK (TO-262) 60V 3.13W Ta 53W Tc P-Channel 550pF @ 25V 175mOhm @ 5.7A, 10V 4V @ 250μA 11.4A Tc 17nC @ 10V 10V ±25V

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