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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IRF3704STRRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf3704pbf-datasheets-8551.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 20V | 87W Tc | N-Channel | 1996pF @ 10V | 9m Ω @ 15A, 10V | 3V @ 250μA | 77A Tc | 19nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP06CN10LGXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | /files/infineontechnologies-ipp06cn10lgxksa1-datasheets-7623.pdf | TO-220-3 | 3 | yes | EAR99 | LOGIC LEVEL COMPATIBLE | unknown | e3 | MATTE TIN | SINGLE | 260 | 3 | NOT SPECIFIED | 214W | 1 | Not Qualified | R-PSFM-T3 | 100A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 100V | 214W Tc | TO-220AB | 400A | 0.0062Ohm | 480 mJ | N-Channel | 11900pF @ 50V | 6.2m Ω @ 100A, 10V | 2.4V @ 180μA | 100A Tc | 124nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IRF2903ZSPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/infineontechnologies-irf2903zspbf-datasheets-7628.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 2 | No SVHC | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 231W | 1 | FET General Purpose Power | R-PSSO-G2 | 24 ns | 100ns | 37 ns | 48 ns | 260A | 20V | SILICON | DRAIN | SWITCHING | 4V | 231W Tc | 51 ns | 75A | 0.0024Ohm | 820 mJ | 30V | N-Channel | 6320pF @ 25V | 4 V | 2.4m Ω @ 75A, 10V | 4V @ 150μA | 75A Tc | 240nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||
| IRF520NSTRRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2004 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK | 100V | 3.8W Ta 48W Tc | N-Channel | 330pF @ 25V | 200mOhm @ 5.7A, 10V | 4V @ 250μA | 9.7A Tc | 25nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF3706STRRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf3706pbf-datasheets-8476.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 3 | Single | 88W | D2PAK | 2.41nF | 87ns | 4.8 ns | 17 ns | 77A | 12V | 20V | 88W Tc | 10.5mOhm | 20V | N-Channel | 2410pF @ 10V | 8.5mOhm @ 15A, 10V | 2V @ 250μA | 77A Tc | 35nC @ 4.5V | 8.5 mΩ | 2.8V 10V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IRL3715STRRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irl3715spbf-datasheets-8355.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 3 | Single | 71W | D2PAK | 1.06nF | 73ns | 5.1 ns | 12 ns | 54A | 20V | 20V | 3.8W Ta 71W Tc | 14mOhm | 20V | N-Channel | 1060pF @ 10V | 14mOhm @ 26A, 10V | 3V @ 250μA | 54A Tc | 17nC @ 4.5V | 14 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IPP100P03P3L-04 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipi100p03p3l04-datasheets-4246.pdf | TO-220-3 | 3 | EAR99 | 3 | Single | 200W | 1 | 45ns | 180 ns | 200 ns | 100A | 5V | 30V | 200W Tc | -30V | P-Channel | 9300pF @ 25V | 4.3m Ω @ 80A, 10V | 2.1V @ 475μA | 100A Tc | 200nC @ 10V | 4.5V 10V | +5V, -16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFU3710Z-701P | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfr3710ztrl-datasheets-6109.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | compliant | e3 | MATTE TIN OVER NICKEL | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 140W Tc | 42A | 220A | 0.018Ohm | 150 mJ | N-Channel | 2930pF @ 25V | 18m Ω @ 33A, 10V | 4V @ 250μA | 42A Tc | 100nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IRF3711ZSTRRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf3711zpbf-datasheets-8407.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 20V | 79W Tc | N-Channel | 2150pF @ 10V | 6m Ω @ 15A, 10V | 2.45V @ 250μA | 92A Tc | 24nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP08CN10L G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp08cn10lg-datasheets-7661.pdf | TO-220-3 | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | compliant | e3 | MATTE TIN | NO | SINGLE | 260 | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 100V | 100V | 167W Tc | TO-220AB | 98A | 392A | 0.008Ohm | 254 mJ | N-Channel | 8610pF @ 50V | 8m Ω @ 98A, 10V | 2.4V @ 130μA | 98A Tc | 90nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IRFS3307PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfs3307trlpbf-datasheets-6111.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.572mm | 9.65mm | Lead Free | 6.2MOhm | 3 | No | Single | 200W | 1 | 26 ns | 120ns | 63 ns | 51 ns | 130A | 20V | 200W Tc | 75V | N-Channel | 5150pF @ 50V | 6.3m Ω @ 75A, 10V | 4V @ 150μA | 120A Tc | 180nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IRLL024ZPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 1999 | /files/infineontechnologies-irll024ztrpbf-datasheets-8545.pdf | 55V | 5A | TO-261-4, TO-261AA | 6.6802mm | 1.4478mm | 3.7mm | Contains Lead | 10 Weeks | No SVHC | 60MOhm | 3 | EAR99 | No | Single | 2.8W | 1 | 8.6 ns | 33ns | 15 ns | 20 ns | 5A | 16V | 55V | 3V | 1W Ta | 55V | N-Channel | 380pF @ 25V | 3 V | 60m Ω @ 3A, 10V | 3V @ 250μA | 5A Tc | 11nC @ 5V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||
| IRFU3706-701PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfr3706pbf-datasheets-7064.pdf | TO-252-4, DPak (3 Leads + Tab) | 20V | 88W Tc | N-Channel | 2410pF @ 10V | 9m Ω @ 15A, 10V | 2V @ 250μA | 75A Tc | 35nC @ 4.5V | 2.8V 10V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLR3110ZPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ROHS3 Compliant | 2006 | /files/infineontechnologies-irlr3110ztrpbf-datasheets-8802.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.7056mm | 2.3876mm | 6.22mm | Lead Free | No SVHC | 14MOhm | 3 | EAR99 | No | Single | 140mW | 1 | 24 ns | 110ns | 48 ns | 33 ns | 42A | 16V | 100V | 2.5V | 140W Tc | 51 ns | 100V | N-Channel | 3980pF @ 25V | 2.5 V | 14m Ω @ 38A, 10V | 2.5V @ 100μA | 42A Tc | 48nC @ 4.5V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||
| IRF3704ZSTRRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf3704zlpbf-datasheets-9967.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK | 20V | 57W Tc | N-Channel | 1220pF @ 10V | 7.9mOhm @ 21A, 10V | 2.55V @ 250μA | 67A Tc | 13nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7210PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | SMD/SMT | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf7210pbf-datasheets-7531.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 3.9878mm | Lead Free | No SVHC | 7mOhm | 8 | No | 2.5W | 1 | 8-SO | 17.179nF | 50 ns | 3ns | 30 ns | 6.5 ns | -16A | 12V | 12V | 12V | 600mV | 2.5W Ta | 247 ns | 7mOhm | -12V | P-Channel | 17179pF @ 10V | 600 mV | 7mOhm @ 16A, 4.5V | 600mV @ 500μA | 16A Ta | 212nC @ 5V | 7 mΩ | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||
| IRL3714STRRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irl3714lpbf-datasheets-8347.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 3 | Single | 47W | D2PAK | 670pF | 78ns | 4.5 ns | 10 ns | 36A | 20V | 20V | 47W Tc | 20mOhm | 20V | N-Channel | 670pF @ 10V | 20mOhm @ 18A, 10V | 3V @ 250μA | 36A Tc | 9.7nC @ 4.5V | 20 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IRLU7833-701PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | 2010 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irlr7833trlpbf-datasheets-1586.pdf | TO-252-4, DPak (3 Leads + Tab) | I-PAK (LF701) | 30V | 140W Tc | N-Channel | 4010pF @ 15V | 4.5mOhm @ 15A, 10V | 2.3V @ 250μA | 140A Tc | 50nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLU7843-701PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irlr7843trpbf-datasheets-7587.pdf | TO-252-4, DPak (3 Leads + Tab) | I-PAK (LF701) | 30V | 140W Tc | N-Channel | 4380pF @ 15V | 3.3mOhm @ 15A, 10V | 2.3V @ 250μA | 161A Tc | 50nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF3708STRRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf3708pbf-datasheets-1914.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 30V | 87W Tc | N-Channel | 2417pF @ 15V | 12m Ω @ 15A, 10V | 2V @ 250μA | 62A Tc | 24nC @ 4.5V | 2.8V 10V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF3709STRRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf3709pbf-datasheets-7962.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK | 30V | 3.1W Ta 120W Tc | N-Channel | 2672pF @ 16V | 9mOhm @ 15A, 10V | 3V @ 250μA | 90A Tc | 41nC @ 5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTD4857N-35G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntd4857nt4g-datasheets-7004.pdf | TO-251-3 Stub Leads, IPak | Lead Free | 3 | 3 | LAST SHIPMENTS (Last Updated: 1 week ago) | yes | EAR99 | e3 | Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 2.1W | 1 | FET General Purpose Power | Not Qualified | 18.7ns | 3.6 ns | 26 ns | 14.6A | 20V | SILICON | DRAIN | SWITCHING | 1.31W Ta 56.6W Tc | 12A | 156A | 0.008Ohm | 144.5 mJ | 25V | N-Channel | 1960pF @ 12V | 5.7m Ω @ 30A, 10V | 2.5V @ 250μA | 12A Ta 78A Tc | 24nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IRF7425PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/infineontechnologies-irf7425trpbf-datasheets-3578.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | EAR99 | ULTRA LOW RESISTANCE | e3 | Matte Tin (Sn) | YES | DUAL | GULL WING | 260 | 30 | 1 | Other Transistors | Not Qualified | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | 2.5W Ta | MS-012AA | 15A | 60A | 0.0082Ohm | P-Channel | 7980pF @ 15V | 8.2m Ω @ 15A, 4.5V | 1.2V @ 250μA | 15A Ta | 130nC @ 4.5V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||
| IPP070N08N3 G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb067n08n3gatma1-datasheets-8491.pdf | TO-220-3 | 3 | yes | EAR99 | compliant | e3 | MATTE TIN | NO | SINGLE | 260 | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 80V | 80V | 136W Tc | TO-220AB | 80A | 320A | 0.007Ohm | 150 mJ | N-Channel | 3840pF @ 40V | 7m Ω @ 73A, 10V | 3.5V @ 73μA | 80A Tc | 56nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IRF5210SPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1998 | /files/infineontechnologies-irf5210lpbf-datasheets-8886.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE | 8541.29.00.95 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | Other Transistors | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 3.1W Ta 170W Tc | 38A | 140A | 0.06Ohm | 120 mJ | P-Channel | 2780pF @ 25V | 60m Ω @ 38A, 10V | 4V @ 250μA | 38A Tc | 230nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IRF6216PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2002 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf6216trpbf-datasheets-4195.pdf | 8-SOIC (0.154, 3.90mm Width) | 39 Weeks | EAR99 | 150V | 2.5W Ta | P-Channel | 1280pF @ 25V | 240m Ω @ 1.3A, 10V | 5V @ 250μA | 2.2A Ta | 49nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF3707ZSTRRP | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2003 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | compliant | e3 | MATTE TIN OVER NICKEL | YES | SINGLE | GULL WING | 260 | 30 | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 57W Tc | 42A | 230A | 0.0095Ohm | 40 mJ | N-Channel | 1210pF @ 15V | 9.5m Ω @ 21A, 10V | 2.25V @ 250μA | 59A Tc | 15nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IRF8714PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/infineontechnologies-irf8714trpbf-datasheets-8404.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 3.9878mm | Lead Free | 8 | 14 Weeks | No SVHC | 8.7MOhm | 8 | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | Single | 30 | 2.5W | 1 | FET General Purpose Power | 10 ns | 9.9ns | 5 ns | 11 ns | 14A | 20V | 30V | SILICON | SWITCHING | 1.8V | 2.5W Ta | 21 ns | 65 mJ | 30V | N-Channel | 1020pF @ 15V | 1.8 V | 8.7m Ω @ 14A, 10V | 2.35V @ 25μA | 14A Ta | 12nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||
| IRFU3709Z-701P | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfr3709z-datasheets-6574.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 30V | 79W Tc | N-Channel | 2330pF @ 15V | 6.5m Ω @ 15A, 10V | 2.25V @ 250μA | 86A Tc | 26nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR540ZPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ROHS3 Compliant | 2005 | /files/infineontechnologies-irfr540ztrpbf-datasheets-0898.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.7056mm | 2.2606mm | 6.22mm | Lead Free | 19 Weeks | No SVHC | 3 | EAR99 | No | Single | 91W | 1 | 14 ns | 42ns | 34 ns | 43 ns | 35A | 20V | 100V | 4V | 91W Tc | 48 ns | 100V | N-Channel | 1690pF @ 25V | 4 V | 28.5m Ω @ 21A, 10V | 4V @ 50μA | 35A Tc | 59nC @ 10V | 10V | ±20V |
