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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Current | Reach Compliance Code | HTS Code | Number of Functions | JESD-609 Code | Terminal Finish | Voltage | Halogen Free | Surface Mount | Terminal Position | Peak Reflow Temperature (Cel) | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Source Url Status Check Date | Supplier Device Package | Input Capacitance | Interface IC Type | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Power Dissipation-Max | JEDEC-95 Code | High Side Driver | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| BMS3003 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/onsemiconductor-bms3003-datasheets-9995.pdf | TO-220-3 Full Pack | 3 | EAR99 | 8542.39.00.01 | 1 | Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni) | SINGLE | 3 | Not Qualified | R-XSFM-T3 | BUFFER OR INVERTER BASED MOSFET DRIVER | 78A | 60V | 2W Ta 40W Tc | NO | P-Channel | 13200pF @ 20V | 6.5m Ω @ 39A, 10V | 2.6V @ 1mA | 78A Ta | 285nC @ 10V | 4V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IPI65R310CFDXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb65r310cfdatma1-datasheets-1369.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | Lead Free | 3 | 16 Weeks | yes | EAR99 | Halogen Free | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | R-PSIP-T3 | 11 ns | 7.5ns | 7 ns | 45 ns | 11.4A | 20V | 650V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 104.2W Tc | 34.4A | 290 mJ | N-Channel | 1100pF @ 100V | 310m Ω @ 4.4A, 10V | 4.5V @ 440μA | 11.4A Tc | 41nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| BUZ73H3046XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-buz73hxksa1-datasheets-9986.pdf | TO-220-3 | 3 | AVALANCHE RATED | SINGLE | 1 | R-PSFM-T3 | 7A | SILICON | SINGLE WITH BUILT-IN DIODE | 200V | 200V | 40W Tc | TO-220AB | 7A | 28A | 0.4Ohm | 120 mJ | N-Channel | 530pF @ 25V | 400m Ω @ 4.5A, 10V | 4V @ 1mA | 7A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IPW65R190C6FKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipw65r190c6fksa1-datasheets-9948.pdf | TO-247-3 | 3 | 12 Weeks | yes | compliant | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 650V | 650V | 151W Tc | 66A | 0.19Ohm | 485 mJ | N-Channel | 1620pF @ 100V | 190m Ω @ 7.3A, 10V | 3.5V @ 730μA | 20.2A Tc | 73nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| BFL4007 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2013 | /files/onsemiconductor-bfl4007-datasheets-9953.pdf | TO-220-3 Full Pack | 3 | No | 8541.29.00.95 | Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni) | SINGLE | 3 | 1 | R-PSFM-T3 | 27 ns | 72ns | 48 ns | 122 ns | 8.7A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 600V | 600V | 2W Ta 40W Tc | TO-220AB | 49A | 0.68Ohm | 215 mJ | N-Channel | 1200pF @ 30V | 680m Ω @ 7A, 10V | 5V @ 1mA | 8.7A Ta | 46nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| 2SK3817-DL-E | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 15mOhm | 3 | No | 65W | 26 ns | 230ns | 230 ns | 255 ns | 60A | 20V | 60V | 1.65W Ta 65W Tc | N-Channel | 3500pF @ 20V | 15m Ω @ 30A, 10V | 2.6V @ 1mA | 60A Ta | 67nC @ 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUZ73A H | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2005 | /files/infineontechnologies-buz73ah3046-datasheets-9893.pdf | TO-220-3 | 3 | yes | EAR99 | AVALANCHE RATED | compliant | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | 200V | 200V | 40W Tc | TO-220AB | 5.5A | 22A | 0.6Ohm | 120 mJ | N-Channel | 530pF @ 25V | 600m Ω @ 4.5A, 10V | 4V @ 1mA | 5.5A Tc | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| 2SK4099LS | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/onsemiconductor-2sk4099ls-datasheets-9958.pdf | TO-220-3 Full Pack | Lead Free | 3 | 3 | HIGH RELIABILITY | 8541.29.00.95 | Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni) | SINGLE | 3 | 2W | 1 | Not Qualified | 16 ns | 37ns | 8.5A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 600V | 600V | 2W Ta 35W Tc | TO-220AB | 0.94Ohm | 215 mJ | N-Channel | 750pF @ 30V | 940m Ω @ 4A, 10V | 5V @ 1mA | 6.9A Tc | 29nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| IPW65R660CFDFKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | /files/infineontechnologies-ipw65r660cfdfksa1-datasheets-9962.pdf | TO-247-3 | Lead Free | 3 | 16 Weeks | 3 | yes | EAR99 | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 62.5W | 1 | Not Qualified | 9 ns | 8ns | 10 ns | 40 ns | 6A | 20V | 650V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 700V | 62.5W Tc | 6A | 0.66Ohm | N-Channel | 615pF @ 100V | 660m Ω @ 2.1A, 10V | 4.5V @ 200μA | 6A Tc | 22nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IPP65R660CFDXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp65r660cfdxksa1-datasheets-9968.pdf | TO-220-3 | 3 | 16 Weeks | yes | compliant | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 650V | 650V | 62.5W Tc | TO-220AB | 6A | 17A | 0.66Ohm | 115 mJ | N-Channel | 615pF @ 100V | 660m Ω @ 2.1A, 10V | 4.5V @ 200μA | 6A Tc | 22nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IPP65R280C6XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | /files/infineontechnologies-ipp65r280c6xksa1-datasheets-9973.pdf | TO-220-3 | Lead Free | 3 | 12 Weeks | yes | EAR99 | Halogen Free | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 104W | 1 | Not Qualified | R-PSFM-T3 | 13 ns | 11ns | 12 ns | 105 ns | 13.8A | 20V | 650V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 104W Tc | TO-220AB | 39A | 0.28Ohm | 290 mJ | N-Channel | 950pF @ 100V | 280m Ω @ 4.4A, 10V | 3.5V @ 440μA | 13.8A Tc | 45nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IPP100N04S4H2AKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2012 | /files/infineontechnologies-ipi100n04s4h2aksa1-datasheets-9841.pdf | TO-220-3 | 10mm | 15.65mm | 4.4mm | 3 | 14 Weeks | 3 | EAR99 | 75A | 40V | Halogen Free | NO | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | 18 ns | 19 ns | 100A | 20V | 40V | SILICON | 115W Tc | TO-220AB | 0.0027Ohm | 280 mJ | N-Channel | 7180pF @ 25V | 2.7m Ω @ 100A, 10V | 4V @ 70μA | 100A Tc | 90nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| 2SK3820-DL-E | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount, Through Hole | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/onsemiconductor-2sk3820dle-datasheets-9924.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 60mOhm | 3 | No | e6 | Tin/Bismuth (Sn/Bi) | 50W | FET General Purpose Power | 20 ns | 34ns | 62 ns | 185 ns | 26A | 20V | Single | 100V | 1.65W Ta 50W Tc | N-Channel | 2150pF @ 20V | 60m Ω @ 13A, 10V | 26A Ta | 44nC @ 10V | 4V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| BUZ73ALHXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2005 | /files/infineontechnologies-buz73alhxksa1-datasheets-9925.pdf | TO-220-3 | 3 | 3 | yes | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | No | SINGLE | 3 | 1 | 15 ns | 60ns | 40 ns | 100 ns | 5.5A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | 200V | 200V | 40W Tc | TO-220AB | 22A | 0.6Ohm | 120 mJ | N-Channel | 840pF @ 25V | 600m Ω @ 3.5A, 5V | 2V @ 1mA | 5.5A Tc | 5V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IPP120N04S402AKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2010 | /files/infineontechnologies-ipb120n04s402atma1-datasheets-8226.pdf | TO-220-3 | Contains Lead | 3 | 3 | EAR99 | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | 27 ns | 16ns | 30 ns | 120A | 20V | 40V | SILICON | SINGLE WITH BUILT-IN DIODE | 158W Tc | TO-220AB | 480A | 0.0021Ohm | 480 mJ | N-Channel | 10740pF @ 25V | 2.1m Ω @ 100A, 10V | 4V @ 110μA | 120A Tc | 134nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IPP120N04S401AKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2010 | /files/infineontechnologies-ipp120n04s401aksa1-datasheets-9936.pdf | TO-220-3 | 10mm | 15.65mm | 4.4mm | 3 | 14 Weeks | 3 | EAR99 | e3 | Tin (Sn) | Halogen Free | NO | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | 34 ns | 41 ns | 120A | 20V | 40V | SILICON | 188W Tc | TO-220AB | 480A | 0.0019Ohm | 750 mJ | N-Channel | 14000pF @ 25V | 1.9m Ω @ 100A, 10V | 4V @ 140μA | 120A Tc | 176nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IPI65R110CFDXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp65r110cfdxksa1-datasheets-4596.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 16 Weeks | 3 | Halogen Free | Single | PG-TO262-3 | 3.24nF | 11ns | 6 ns | 68 ns | 31.2A | 20V | 650V | 277.8W Tc | 110mOhm | N-Channel | 3240pF @ 100V | 110mOhm @ 12.7A, 10V | 4.5V @ 1.3mA | 31.2A Tc | 118nC @ 10V | 110 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN012-25YLC,115 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/nxpusainc-psmn01225ylc115-datasheets-9945.pdf | SC-100, SOT-669 | not_compliant | 4 | 2013-06-14 00:00:00 | 25V | 26W Tc | N-Channel | 528pF @ 12V | 12.6m Ω @ 10A, 10V | 1.95V @ 1mA | 33A Tc | 8.3nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK3821-E | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/onsemiconductor-2sk3821dle-datasheets-9911.pdf | TO-220-3, Short Tab | 3 | No | 30 ns | 68ns | 110 ns | 300 ns | 40A | 20V | 100V | 1.65W Ta 65W Tc | N-Channel | 4200pF @ 20V | 33m Ω @ 20A, 10V | 2.6V @ 1mA | 40A Ta | 73nC @ 10V | 4V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP65R600C6XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | /files/infineontechnologies-ipp65r600c6xksa1-datasheets-9878.pdf | TO-220-3 | Lead Free | 3 | 12 Weeks | yes | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 63W | 1 | Not Qualified | R-PSFM-T3 | 12 ns | 9ns | 13 ns | 80 ns | 7.3A | 20V | 650V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 63W Tc | TO-220AB | 0.6Ohm | N-Channel | 440pF @ 100V | 600m Ω @ 2.1A, 10V | 3.5V @ 210μA | 7.3A Tc | 23nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IPI65R660CFDXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | /files/infineontechnologies-ipi65r660cfdxksa1-datasheets-9888.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | 16 Weeks | 3 | yes | EAR99 | Halogen Free | NO | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 63W | 1 | Not Qualified | 9 ns | 8ns | 10 ns | 40 ns | 6A | 30V | SILICON | SWITCHING | 62.5W Tc | 6A | 17A | 0.66Ohm | 115 mJ | 650V | N-Channel | 615pF @ 100V | 660m Ω @ 2.1A, 10V | 4.5V @ 200μA | 6A Tc | 22nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| BUZ73A H3046 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-buz73ah3046-datasheets-9893.pdf | TO-220-3 | 3 | AVALANCHE RATED | compliant | NO | SINGLE | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | 200V | 200V | 40W Tc | TO-220AB | 5.5A | 22A | 0.6Ohm | 120 mJ | N-Channel | 530pF @ 25V | 600m Ω @ 4.5A, 10V | 4V @ 1mA | 5.5A Tc | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IPP90N04S402AKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb90n04s402atma1-datasheets-8150.pdf | TO-220-3 | 3 | EAR99 | compliant | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | 40V | 40V | 150W Tc | TO-220AB | 90A | 360A | 0.0025Ohm | 475 mJ | N-Channel | 9430pF @ 25V | 2.5m Ω @ 90A, 10V | 4V @ 95μA | 90A Tc | 118nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IPI65R600C6XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipi65r600c6xksa1-datasheets-9901.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | 12 Weeks | yes | compliant | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 650V | 650V | 63W Tc | 18A | 0.6Ohm | 142 mJ | N-Channel | 440pF @ 100V | 600m Ω @ 2.1A, 10V | 3.5V @ 210μA | 7.3A Tc | 23nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IPW65R280C6FKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | /files/infineontechnologies-ipw65r280c6fksa1-datasheets-9906.pdf | TO-247-3 | Lead Free | 3 | 12 Weeks | yes | EAR99 | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 104W | 1 | Not Qualified | R-PSFM-T3 | 13 ns | 11ns | 12 ns | 105 ns | 13.8A | 20V | 650V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 104W Tc | 39A | 0.28Ohm | 290 mJ | N-Channel | 950pF @ 100V | 280m Ω @ 4.4A, 10V | 3.5V @ 440μA | 13.8A Tc | 45nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| 2SK3821-DL-E | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/onsemiconductor-2sk3821dle-datasheets-9911.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | SMP-FD | 4.2nF | 40A | 100V | 1.65W Ta 65W Tc | N-Channel | 4200pF @ 20V | 33mOhm @ 20A, 10V | 2.6V @ 1mA | 40A Ta | 73nC @ 10V | 33 mΩ | 4V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPA65R190C6XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | /files/infineontechnologies-ipa65r190c6xksa1-datasheets-9912.pdf | TO-220-3 Full Pack | Lead Free | 3 | 12 Weeks | 3 | yes | EAR99 | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 34W | 1 | Not Qualified | 13 ns | 12ns | 10 ns | 133 ns | 20.2A | 20V | 650V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 34W Tc | TO-220AB | 66A | 485 mJ | N-Channel | 1620pF @ 100V | 190m Ω @ 7.3A, 10V | 3.5V @ 730μA | 20.2A Tc | 73nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| BUZ73LHXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1999 | TO-220-3 | 3 | yes | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | No | SINGLE | 3 | 1 | R-PSFM-T3 | 15 ns | 60ns | 40 ns | 100 ns | 7A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | 200V | 200V | 40W Tc | TO-220AB | 7A | 28A | 0.4Ohm | 120 mJ | N-Channel | 840pF @ 25V | 400m Ω @ 3.5A, 5V | 2V @ 1mA | 7A Tc | 5V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IPI65R280C6XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipi65r280c6xksa1-datasheets-9836.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | 12 Weeks | yes | EAR99 | compliant | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 650V | 650V | 104W Tc | 39A | 0.28Ohm | 290 mJ | N-Channel | 950pF @ 100V | 280m Ω @ 4.4A, 10V | 3.5V @ 440μA | 13.8A Tc | 45nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IPI100N04S4H2AKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2012 | /files/infineontechnologies-ipi100n04s4h2aksa1-datasheets-9841.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | Contains Lead | 3 | 14 Weeks | 3 | EAR99 | Halogen Free | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | 18 ns | 13ns | 21 ns | 19 ns | 100A | 20V | 40V | SILICON | SINGLE WITH BUILT-IN DIODE | 115W Tc | 400A | 0.0027Ohm | 280 mJ | N-Channel | 7180pF @ 25V | 2.7m Ω @ 100A, 10V | 4V @ 70μA | 100A Tc | 90nC @ 10V | 10V | ±20V |
