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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Input Type | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Halogen Free | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Turn On Delay Time | Rise Time | Turn-Off Delay Time | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Continuous Collector Current | Power - Max | JEDEC-95 Code | Reverse Recovery Time | Collector Emitter Breakdown Voltage | Collector Emitter Saturation Voltage | Turn On Time | Collector Emitter Voltage (VCEO) | Max Collector Current | Rise Time-Max | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Turn Off Time-Nom (toff) | Test Condition | Gate-Emitter Voltage-Max | Gate-Emitter Thr Voltage-Max | Vce(on) (Max) @ Vge, Ic | IGBT Type | Gate Charge | Current - Collector Pulsed (Icm) | Td (on/off) @ 25°C | Switching Energy | Fall Time-Max (tf) |
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| FGH75T65UPD-F155 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/onsemiconductor-fgh75t65updf155-datasheets-0422.pdf | TO-247-3 | ACTIVE, NOT REC (Last Updated: 1 week ago) | 375W | 85ns | 650V | 150A | 400V, 75A, 3 Ω, 15V | 2.3V @ 15V, 75A | Trench Field Stop | 68nC | 225A | 42ns/216ns | 3.68mJ (on), 1.6mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRG8CH50K10F | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~175°C TJ | Bulk | 1 (Unlimited) | Standard | ROHS3 Compliant | 2015 | /files/infineontechnologies-irg8ch50k10f-datasheets-0427.pdf | Die | 16 Weeks | EAR99 | Insulated Gate BIP Transistors | N-CHANNEL | 1200V | 50A | 600V, 50A, 5 Ω, 15V | 30V | 6.5V | 2V @ 15V, 50A | 245nC | 60ns/285ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FGA6065ADF | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2016 | /files/onsemiconductor-fga6065adf-datasheets-0428.pdf | TO-3P-3, SC-65-3 | 6 Weeks | 6.401g | 3 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | 8541.29.00.95 | e3 | Tin (Sn) | 306W | NOT SPECIFIED | Single | NOT SPECIFIED | 306W | 110 ns | 650V | 2.3V | 120A | 400V, 60A, 6 Ω, 15V | 2.3V @ 15V, 60A | Trench Field Stop | 84nC | 180A | 25.6ns/71ns | 2.46mJ (on), 520μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||
| IKW40N65F5AXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchStop™ | Through Hole | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2014 | /files/infineontechnologies-ikw40n65f5axksa1-datasheets-0434.pdf | TO-247-3 | Lead Free | 3 | 14 Weeks | 3 | yes | EAR99 | Halogen Free | 250W | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 250W | 73 ns | 650V | 30 ns | 650V | 74A | 200 ns | 400V, 20A, 15 Ω, 15V | 2.1V @ 15V, 40A | Trench | 95nC | 120A | 19ns/165ns | 350μJ (on), 100μJ (off) | ||||||||||||||||||||||||||||||||||||||
| IXGH36N60B3 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GenX3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2010 | /files/ixys-ixgh36n60b3-datasheets-0437.pdf | TO-247-3 | Lead Free | 3 | 20 Weeks | 250W | SINGLE | 1 | Insulated Gate BIP Transistors | R-PSFM-T3 | SILICON | SINGLE | COLLECTOR | POWER CONTROL | N-CHANNEL | 250W | TO-247AD | 600V | 45 ns | 1.8V | 92A | 350 ns | 400V, 30A, 5 Ω, 15V | 20V | 5V | 1.8V @ 15V, 30A | PT | 80nC | 200A | 19ns/125ns | 540μJ (on), 800μJ (off) | 160ns | ||||||||||||||||||||||||||||||||||||||
| IXGH12N90C | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFAST™, Lightspeed™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2003 | /files/ixys-ixgx12n90c-datasheets-0351.pdf | TO-247-3 | 3 | 6 Weeks | 6.500007g | 3 | yes | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 100W | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 1 | Insulated Gate BIP Transistors | Not Qualified | SILICON | COLLECTOR | MOTOR CONTROL | N-CHANNEL | 100W | TO-247AD | 900V | 40 ns | 900V | 24A | 350 ns | 720V, 12A, 22 Ω, 15V | 20V | 5V | 3V @ 15V, 12A | 33nC | 48A | 20ns/135ns | 320μJ (off) | 180ns | |||||||||||||||||||||||||||||||||
| IXGA24N120C3 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GenX3™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2008 | /files/ixys-ixgp24n120c3-datasheets-0375.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 30 Weeks | yes | AVALANCHE RATED | unknown | e3 | PURE TIN | 250W | GULL WING | NOT SPECIFIED | IXG*24N120 | 4 | Single | NOT SPECIFIED | 250W | 1 | Not Qualified | R-PSSO-G2 | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 1.2kV | 1.2kV | 41 ns | 4.2V | 48A | 1200V | 430 ns | 600V, 20A, 5 Ω, 15V | 4.2V @ 15V, 20A | PT | 79nC | 96A | 16ns/93ns | 1.16mJ (on), 470μJ (off) | ||||||||||||||||||||||||||||||||
| IXYH30N65C3H1 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GenX3™, XPT™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2014 | /files/ixys-ixyh30n65c3h1-datasheets-0401.pdf | TO-247-3 | 14 Weeks | 38.000013g | 270W | Single | 270W | 120 ns | 650V | 2.35V | 2.7V | 60A | 400V, 30A, 10 Ω, 15V | 2.7V @ 15V, 30A | PT | 44nC | 118A | 21ns/75ns | 1mJ (on), 270μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IRGC4063B | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 175°C TJ | Bulk | 1 (Unlimited) | Standard | ROHS3 Compliant | 2008 | /files/infineontechnologies-irgc4063b-datasheets-0402.pdf | Die | 16 Weeks | EAR99 | 600V | 48A | Trench | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRG4PC60UPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | ROHS3 Compliant | 2000 | /files/infineontechnologies-irg4pc60upbf-datasheets-0369.pdf | 600V | 75A | TO-247-3 | 15.875mm | 20.701mm | 5.3086mm | Lead Free | 3 | 14 Weeks | No SVHC | 3 | EAR99 | 520W | NOT SPECIFIED | Single | NOT SPECIFIED | 520W | 1 | Insulated Gate BIP Transistors | Not Qualified | 39 ns | 42ns | 200 ns | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | TO-247AC | 600V | 2V | 78 ns | 2V | 75A | 460 ns | 480V, 40A, 5 Ω, 15V | 20V | 6V | 2V @ 15V, 40A | 310nC | 300A | 39ns/200ns | 280μJ (on), 1.1mJ (off) | ||||||||||||||||||||||||||||
| SGF80N60UFTU | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/onsemiconductor-sgf80n60uftu-datasheets-0404.pdf | 600V | 40A | TO-3P-3 Full Pack | Lead Free | 3 | 6.962g | ACTIVE, NOT REC (Last Updated: 1 week ago) | yes | EAR99 | LOW CONDUCTION LOSS, HIGH SPEED SWITCHING | No | 8541.29.00.95 | e3 | Tin (Sn) | 110W | Single | 1 | R-PSFM-T3 | SILICON | ISOLATED | MOTOR CONTROL | N-CHANNEL | 110W | 600V | 85 ns | 600V | 80A | 310 ns | 300V, 40A, 5 Ω, 15V | 2.6V @ 15V, 40A | 175nC | 220A | 23ns/90ns | 570μJ (on), 590μJ (off) | |||||||||||||||||||||||||||||||||||||
| IXGP24N120C3 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GenX3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2008 | /files/ixys-ixgp24n120c3-datasheets-0375.pdf | TO-220-3 | 3 | 26 Weeks | 2.299997g | yes | AVALANCHE RATED | unknown | e3 | PURE TIN | 250W | NOT SPECIFIED | IXG*24N120 | 3 | Single | NOT SPECIFIED | 250W | 1 | Not Qualified | R-PSFM-T3 | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | TO-220AB | 1.2kV | 3.6V | 41 ns | 4.2V | 48A | 1200V | 430 ns | 600V, 20A, 5 Ω, 15V | 4.2V @ 15V, 20A | PT | 79nC | 96A | 16ns/93ns | 1.16mJ (on), 470μJ (off) | |||||||||||||||||||||||||||||||
| IXDA20N120AS | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Standard | ROHS3 Compliant | 2011 | /files/ixys-ixda20n120as-datasheets-0376.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 32 Weeks | 1.59999g | 3 | yes | HIGH SPEED | not_compliant | e3 | Matte Tin (Sn) | 200W | GULL WING | NOT SPECIFIED | IXD*20N120 | 3 | Single | NOT SPECIFIED | 1 | Insulated Gate BIP Transistors | Not Qualified | R-PSSO-G2 | SILICON | COLLECTOR | MOTOR CONTROL | N-CHANNEL | 1.2kV | 2.8V | 120 ns | 1.2kV | 34A | 1200V | 38A | 450 ns | 600V, 20A, 82 Ω, 15V | 20V | 6.5V | 3V @ 15V, 20A | NPT | 70nC | 3.1mJ (on), 2.4mJ (off) | ||||||||||||||||||||||||||||||
| IXYH40N90C3 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GenX3™, XPT™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2013 | /files/ixys-ixyh40n90c3-datasheets-0377.pdf | TO-247-3 | Lead Free | 3 | 28 Weeks | 3 | 600W | Single | 600W | 1 | Insulated Gate BIP Transistors | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | TO-247AD | 900V | 2.2V | 81 ns | 900V | 105A | 237 ns | 450V, 40A, 5 Ω, 15V | 20V | 5.5V | 2.5V @ 15V, 40A | 74nC | 200A | 27ns/78ns | 1.9mJ (on), 1mJ (off) | ||||||||||||||||||||||||||||||||||||||||
| IXGP20N120BD1 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2004 | /files/ixys-ixgp20n120bd1-datasheets-0378.pdf | TO-220-3 | 3 | 14 Weeks | 2.299997g | yes | e3 | Matte Tin (Sn) | 190W | NOT SPECIFIED | IXG*20N120 | 3 | Single | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 190W | TO-220AB | 40ns | 1.2kV | 35 ns | 1.2kV | 40A | 1200V | 790 ns | 960V, 20A, 10 Ω, 15V | 3.4V @ 15V, 20A | 72nC | 100A | 25ns/150ns | 2.1mJ (off) | |||||||||||||||||||||||||||||||||||
| IXGQ20N120BD1 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2004 | /files/ixys-ixgq20n120b-datasheets-0306.pdf | TO-3P-3, SC-65-3 | 3 | 8 Weeks | 5.500006g | 3 | yes | unknown | e3 | PURE TIN | 190W | NOT SPECIFIED | IXG*20N120 | 2 | Single | NOT SPECIFIED | 1 | Insulated Gate BIP Transistors | Not Qualified | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 190W | 40 ns | 1.2kV | 43 ns | 1.2kV | 40A | 1200V | 630 ns | 960V, 20A, 10 Ω, 15V | 20V | 5V | 3.4V @ 15V, 20A | 62nC | 100A | 20ns/270ns | 2.1mJ (off) | ||||||||||||||||||||||||||||||||
| FGH75N60SFTU | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/onsemiconductor-fgh75n60sftu-datasheets-0380.pdf | TO-247-3 | 3 | 6.39g | 3 | yes | EAR99 | No | 8541.29.00.95 | e3 | MATTE TIN | 452W | Single | 1 | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 452W | TO-247AB | 600V | 87 ns | 600V | 150A | 159 ns | 400V, 75A, 3 Ω, 15V | 2.9V @ 15V, 75A | Field Stop | 250nC | 225A | 26ns/138ns | 2.7mJ (on), 1mJ (off) | ||||||||||||||||||||||||||||||||||||||||
| IXYH20N65C3D1 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | XPT™, GenX3™ | Through Hole | -55°C~175°C TJ | Standard | TO-247-3 | 28 Weeks | 230W | 34ns | 650V | 50A | 400V, 20A, 20 Ω, 15V | 2.5V @ 15V, 20A | PT | 30nC | 105A | 19ns/80ns | 430μJ (on), 350μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXGH22N140IH | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | TO-247-3 | 1.4kV | 1400V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXGP15N120B | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFAST™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2000 | /files/ixys-ixgp15n120b-datasheets-0391.pdf | TO-220-3 | 3 | 8 Weeks | 2.299997g | 3 | yes | 150W | NOT SPECIFIED | IXG*15N120 | 3 | Single | NOT SPECIFIED | 1 | Insulated Gate BIP Transistors | Not Qualified | SILICON | POWER CONTROL | N-CHANNEL | 150W | TO-220AB | 1.2kV | 3.2V | 43 ns | 1.2kV | 30A | 1200V | 660 ns | 960V, 15A, 10 Ω, 15V | 20V | 5V | 3.2V @ 15V, 15A | PT | 69nC | 60A | 25ns/180ns | 1.75mJ (off) | |||||||||||||||||||||||||||||||||
| IRGP4650DPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2004 | /files/infineontechnologies-irgp4650dpbf-datasheets-0392.pdf | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | Lead Free | 16 Weeks | No SVHC | 3 | EAR99 | No | 268W | Single | 134W | Insulated Gate BIP Transistors | N-CHANNEL | 268W | 120 ns | 600V | 1.6V | 1.9V | 76A | 42ns | 400V, 35A, 10 Ω, 15V | 20V | 6.5V | 1.9V @ 15V, 35A | 104nC | 105A | 46ns/105ns | 390μJ (on), 632μJ (off) | 54ns | |||||||||||||||||||||||||||||||||||||||
| IXGH48N60A3 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GenX3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2009 | /files/ixys-ixga48n60a3-datasheets-0223.pdf | TO-247-3 | Lead Free | 3 | 30 Weeks | 6.500007g | yes | LOW CONDUCTION LOSS | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 300W | NOT SPECIFIED | IXG*48N60 | 3 | Single | NOT SPECIFIED | 300W | 1 | Insulated Gate BIP Transistors | Not Qualified | R-PSFM-T3 | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | TO-247AD | 600V | 1.18V | 54 ns | 600V | 120A | 925 ns | 480V, 32A, 5 Ω, 15V | 20V | 5V | 1.35V @ 15V, 32A | PT | 110nC | 300A | 25ns/334ns | 950μJ (on), 2.9mJ (off) | |||||||||||||||||||||||||||||
| LGB18N40ATH | Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | RoHS Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXGX12N90C | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFAST™, Lightspeed™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2003 | /files/ixys-ixgx12n90c-datasheets-0351.pdf | TO-247-3 | 3 | 25 Weeks | 3 | yes | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 100W | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 1 | Not Qualified | SILICON | COLLECTOR | MOTOR CONTROL | N-CHANNEL | 100W | 900V | 40 ns | 900V | 24A | 350 ns | 720V, 12A, 22 Ω, 15V | 3V @ 15V, 12A | 33nC | 48A | 20ns/135ns | 320μJ (off) | |||||||||||||||||||||||||||||||||||||||
| APT35GA90B | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 8™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | /files/microsemicorporation-apt35ga90b-datasheets-0317.pdf | TO-247-3 | 3 | 32 Weeks | yes | LOW CONDUCTION LOSS | No | e1 | TIN SILVER COPPER | 290W | 3 | Single | 1 | R-PSFM-T3 | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 290W | 900V | 25 ns | 900V | 63A | 298 ns | 600V, 18A, 10 Ω, 15V | 3.1V @ 15V, 18A | PT | 84nC | 105A | 12ns/104ns | 642μJ (on), 382μJ (off) | ||||||||||||||||||||||||||||||||||||||||
| FGH75N60UFTU | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | TO-247-3 | 15.6mm | 20.6mm | 4.7mm | Lead Free | 4 Weeks | 6.39g | No SVHC | 3 | ACTIVE (Last Updated: 5 days ago) | yes | EAR99 | No | 8541.29.00.95 | e3 | Tin (Sn) | 452W | Single | Insulated Gate BIP Transistors | N-CHANNEL | 452W | 600V | 600V | 600V | 150A | 400V, 75A, 3 Ω, 15V | 20V | 6.5V | 2.4V @ 15V, 75A | Field Stop | 250nC | 225A | 27ns/128ns | 3.05mJ (on), 1.35mJ (off) | 80ns | |||||||||||||||||||||||||||||||||||||
| IXGA48N60B3 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GenX3™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2009 | /files/ixys-ixgh48n60b3-datasheets-0313.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 30 Weeks | 1.59999g | 3 | yes | LOW CONDUCTION LOSS | unknown | e3 | PURE TIN | 300W | SINGLE | GULL WING | NOT SPECIFIED | IXG*48N60 | 4 | NOT SPECIFIED | 1 | Insulated Gate BIP Transistors | Not Qualified | R-PSSO-G2 | SILICON | SINGLE | COLLECTOR | POWER CONTROL | N-CHANNEL | 300W | 600V | 44 ns | 1.8V | 280A | 347 ns | 480V, 30A, 5 Ω, 15V | 20V | 5V | 1.8V @ 15V, 32A | PT | 115nC | 22ns/130ns | 840μJ (on), 660μJ (off) | 200ns | ||||||||||||||||||||||||||||
| RGTH00TS65DGC11 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2014 | /files/rohmsemiconductor-rgth00ts65dgc11-datasheets-0357.pdf | TO-247-3 | 3 | 17 Weeks | 38.000013g | Unknown | 3 | yes | EAR99 | 277W | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | SILICON | POWER CONTROL | N-CHANNEL | 50A | 277W | 54 ns | 650V | 1.6V | 102 ns | 650V | 85A | 221 ns | 400V, 50A, 10 Ω, 15V | 2.1V @ 15V, 50A | Trench Field Stop | 94nC | 200A | 39ns/143ns | |||||||||||||||||||||||||||||||||||||||
| APT50GN60BG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 1999 | /files/microsemicorporation-apt50gn60bg-datasheets-0320.pdf | 600V | 107A | TO-247-3 | 21.46mm | 5.31mm | 16.26mm | Lead Free | 3 | 24 Weeks | 38.000013g | yes | EAR99 | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 366W | 3 | Single | 1 | Insulated Gate BIP Transistors | R-PSFM-T3 | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 107A | TO-247AD | 600V | 1.5V | 45 ns | 600V | 107A | 400 ns | 400V, 50A, 4.3 Ω, 15V | 30V | 6.5V | 1.85V @ 15V, 50A | Trench Field Stop | 325nC | 150A | 20ns/230ns | 1185μJ (on), 1565μJ (off) | ||||||||||||||||||||||||||||
| NGTB50N60SWG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2014 | /files/onsemiconductor-ngtb50n60swg-datasheets-0322.pdf | TO-247-3 | Lead Free | 5 Weeks | 3 | ACTIVE, NOT REC (Last Updated: 1 day ago) | yes | EAR99 | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | Insulated Gate BIP Transistors | N-CHANNEL | 376ns | 600V | 2.6V | 100A | 400V, 50A, 10 Ω, 15V | 20V | 6.5V | 2.6V @ 15V, 50A | Trench Field Stop | 135nC | 200A | 70ns/144ns | 600μJ (off) |
