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| Parameters | |
|---|---|
| Turn On Time | 78 ns |
| Test Condition | 480V, 40A, 5 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 40A |
| Turn Off Time-Nom (toff) | 460 ns |
| Gate Charge | 310nC |
| Current - Collector Pulsed (Icm) | 300A |
| Td (on/off) @ 25°C | 39ns/200ns |
| Switching Energy | 280μJ (on), 1.1mJ (off) |
| Gate-Emitter Voltage-Max | 20V |
| Gate-Emitter Thr Voltage-Max | 6V |
| Height | 20.701mm |
| Length | 15.875mm |
| Width | 5.3086mm |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 14 Weeks |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Bulk |
| Published | 2000 |
| Part Status | Last Time Buy |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Subcategory | Insulated Gate BIP Transistors |
| Voltage - Rated DC | 600V |
| Max Power Dissipation | 520W |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Current Rating | 75A |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 520W |
| Case Connection | COLLECTOR |
| Input Type | Standard |
| Turn On Delay Time | 39 ns |
| Transistor Application | POWER CONTROL |
| Rise Time | 42ns |
| Polarity/Channel Type | N-CHANNEL |
| Turn-Off Delay Time | 200 ns |
| Collector Emitter Voltage (VCEO) | 2V |
| Max Collector Current | 75A |
| JEDEC-95 Code | TO-247AC |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 2V |
The IRG4PC60UPBF is a 600V Ultrafast IGBT with a frequency range of 8 to 60kHz. The hard switching technique is designed to operate at a high frequency. The IGBT architecture of Generation 4 has a narrower parameter distribution and is more efficient. When utilized with the IR HEXFRED and IR Fred companion diodes, it gives the best results. An insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device principally used as an electronic switch that has evolved to combine high efficiency and fast switching as it has been developed.
Industry standard TO-247AC package
Lead-Free
UltraFast: Optimized for high operating frequencies up to 50 kHz in hard switching, >200 kHz in resonant mode
Generation 4 IGBT design provides tighter parameter distribution and higher efficiency
IGBT's optimized for specified application conditions
Designed for best performance when used with IR Hexfred & IR Fred companion diodes
Generation 4 IGBT's offer highest efficiency available
Power Management
Motor Drive & Control
AC and DC Motor Drives Offering Speed Control
Chopper and Inverters
Solar Inverters
Please send RFQ , we will respond immediately.