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ContactIGBTs Modules(2658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Forward Current | Turn On Delay Time | Turn-Off Delay Time | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Power - Max | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Collector Emitter Breakdown Voltage | Collector Emitter Saturation Voltage | Turn On Time | Collector Emitter Voltage (VCEO) | Max Collector Current | Input | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Turn Off Time-Nom (toff) | VCEsat-Max | Gate-Emitter Voltage-Max | Gate-Emitter Thr Voltage-Max | Current - Collector Cutoff (Max) | Vce(on) (Max) @ Vge, Ic | IGBT Type | NTC Thermistor | Input Capacitance (Cies) @ Vce |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| APTGT100DA60T1G | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~175°C TJ | 1 (Unlimited) | RoHS Compliant | 2007 | /files/microsemicorporation-aptgt100da60t1g-datasheets-0892.pdf | SP1 | 12 | 36 Weeks | 12 | yes | EAR99 | e1 | TIN SILVER COPPER | 340W | UPPER | THROUGH-HOLE | NOT SPECIFIED | 12 | NOT SPECIFIED | 1 | Insulated Gate BIP Transistors | Not Qualified | 6.1nF | SILICON | Single | ISOLATED | MOTOR CONTROL | N-CHANNEL | 340W | 600V | 180 ns | 600V | 150A | Standard | 370 ns | 1.9 V | 20V | 250μA | 1.9V @ 15V, 100A | Trench Field Stop | Yes | 6.1nF @ 25V | |||||||||||||||||||||||||||||||||||
| CPV363M4U | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -40°C~150°C TJ | 1 (Unlimited) | Non-RoHS Compliant | 1996 | /files/vishaysemiconductordiodesdivision-vscpv363m4kpbf-datasheets-2350.pdf | 19-SIP (13 Leads), IMS-2 | 21 Weeks | 13 | 36W | CPV363M4 | IMS-2 | 1.1nF | Three Phase Inverter | 36W | 600V | 2V | 13A | Standard | 600V | 13A | 250μA | 2V @ 15V, 13A | No | 1.1nF @ 30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| MID75-12A3 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Panel, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ROHS3 Compliant | 2000 | /files/ixys-mid7512a3-datasheets-0918.pdf | Y4-M5 | 94mm | 30mm | 34mm | 5 | 24 Weeks | 7 | yes | EAR99 | UL RECOGNIZED | 370W | UPPER | UNSPECIFIED | MID | 7 | 1 | Insulated Gate BIP Transistors | R-XUFM-X5 | 3.3nF | SILICON | Single | ISOLATED | POWER CONTROL | N-CHANNEL | 370W | 1.2kV | 1.2kV | 170 ns | 1.2kV | 90A | Standard | 1200V | 570 ns | 3 V | 20V | 4mA | 2.7V @ 15V, 50A | NPT | No | 3.3nF @ 25V | |||||||||||||||||||||||||||||||
| FP06R12W1T4B3BOMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | -40°C~150°C | Not Applicable | RoHS Compliant | 2002 | /files/infineontechnologies-fp06r12w1t4b3boma1-datasheets-0919.pdf | Module | Contains Lead | 16 Weeks | EAR99 | Not Halogen Free | NOT SPECIFIED | NOT SPECIFIED | Three Phase Inverter | 94W | Standard | 1200V | 12A | 1mA | 2.25V @ 15V, 6A | Trench Field Stop | Yes | 600pF @ 25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MIXA30W1200TML | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | -40°C~125°C TJ | Bulk | 1 (Unlimited) | ROHS3 Compliant | 2011 | /files/ixys-mixa30w1200tml-datasheets-0920.pdf | E1 | 24 | UL RECOGNIZED | 150W | UPPER | UNSPECIFIED | 24 | 6 | Insulated Gate BIP Transistors | R-XUFM-X24 | SILICON | Three Phase Inverter with Brake | ISOLATED | POWER CONTROL | N-CHANNEL | 150W | 1.2kV | 110 ns | 2.1V | 43A | Standard | 1200V | 350 ns | 20V | 150μA | 2.1V @ 15V, 25A | PT | Yes | |||||||||||||||||||||||||||||||||||||||||||
| VS-CPV363M4UPBF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -40°C~150°C TJ | 1 (Unlimited) | ROHS3 Compliant | 2013 | /files/vishaysemiconductordiodesdivision-vscpv363m4upbf-datasheets-0921.pdf | 19-SIP (13 Leads), IMS-2 | 12 Weeks | 13 | EAR99 | 36W | CPV363M4 | 1.1nF | 36W | 600V | 2.2V | 13A | Standard | 250μA | 2.2V @ 15V, 6.8A | No | 1.1nF @ 30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGT150SK60T1G | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~175°C TJ | 1 (Unlimited) | RoHS Compliant | /files/microsemicorporation-aptgt150sk60t1g-datasheets-0924.pdf | SP1 | 12 | 36 Weeks | 1 | yes | EAR99 | e1 | TIN SILVER COPPER | 480W | UPPER | THROUGH-HOLE | NOT SPECIFIED | 12 | NOT SPECIFIED | 1 | Insulated Gate BIP Transistors | Not Qualified | 9.2nF | SILICON | Single | ISOLATED | MOTOR CONTROL | N-CHANNEL | 480W | 600V | 180 ns | 1.9V | 225A | Standard | 370 ns | 20V | 250μA | 1.9V @ 15V, 150A | Trench Field Stop | Yes | 9.2nF @ 25V | |||||||||||||||||||||||||||||||||||||
| APT50GP60JDQ2 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | 1 (Unlimited) | RoHS Compliant | 1999 | /files/microsemicorporation-apt50gp60jdq2-datasheets-0926.pdf | 600V | 100A | SOT-227-4, miniBLOC | Lead Free | 4 | 30 Weeks | 4 | yes | LOW CONDUCTION LOSS | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 329W | UPPER | UNSPECIFIED | 4 | 1 | Insulated Gate BIP Transistors | 5.7nF | SILICON | Single | ISOLATED | POWER CONTROL | N-CHANNEL | 600V | 55 ns | 600V | 100A | Standard | 200 ns | 30V | 525μA | 2.7V @ 15V, 50A | PT | No | 5.7nF @ 25V | ||||||||||||||||||||||||||||||||||||
| FS50R06W1E3B11BOMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | EasyPACK™ 1B | Screw | Chassis Mount | -40°C~150°C | 1 (Unlimited) | ROHS3 Compliant | 2002 | /files/infineontechnologies-fs50r06w1e3b11boma1-datasheets-0935.pdf | Module | Contains Lead | 18 | 16 Weeks | 18 | EAR99 | UL RECOGNIZED | Not Halogen Free | UPPER | UNSPECIFIED | NOT SPECIFIED | NOT SPECIFIED | 205W | 6 | SILICON | Three Phase Inverter | ISOLATED | POWER CONTROL | N-CHANNEL | 1.45V | 250 ns | 600V | 70A | Standard | 70A | 370 ns | 1mA | 1.9V @ 15V, 50A | Trench Field Stop | Yes | 3.1nF @ 25V | ||||||||||||||||||||||||||||||||||||||||
| DDB2U30N08VRBOMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Screw | Chassis Mount | -40°C~125°C | 1 (Unlimited) | RoHS Compliant | 2006 | /files/infineontechnologies-ddb2u30n08vrboma1-datasheets-0941.pdf | Module | 35.6mm | 12mm | 25.4mm | Contains Lead | 12 | 750 | no | EAR99 | No | Not Halogen Free | UPPER | UNSPECIFIED | 12 | Single | 1 | R-XUFM-X12 | SILICON | 3 Independent | ISOLATED | N-CHANNEL | 83.5W | 800V | 38 ns | 600V | 25A | Standard | 145 ns | 1mA | 2.55V @ 15V, 20A | Yes | 880pF @ 25V | ||||||||||||||||||||||||||||||||||||||||
| FP15R12W1T7PB3BPSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 16 Weeks | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGT50DDA60T3G | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~175°C TJ | 1 (Unlimited) | RoHS Compliant | 2006 | /files/microsemicorporation-aptgt50dda60t3g-datasheets-0848.pdf | SP3 | 25 | 36 Weeks | 32 | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | 176W | UPPER | UNSPECIFIED | 25 | Dual | 2 | R-XUFM-X25 | 3.15nF | SILICON | Dual Boost Chopper | ISOLATED | POWER CONTROL | N-CHANNEL | 176W | 600V | 170 ns | 600V | 80A | Standard | 310 ns | 250μA | 1.9V @ 15V, 50A | Trench Field Stop | Yes | 3.15nF @ 25V | |||||||||||||||||||||||||||||||||||||
| APTGLQ30H65T3G | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | -40°C~175°C TJ | RoHS Compliant | 2012 | /files/microsemicorporation-aptglq30h65t3g-datasheets-0876.pdf | Module | 36 Weeks | IN PRODUCTION (Last Updated: 2 days ago) | Full Bridge | 95W | Standard | 650V | 40A | 50μA | 2.3V @ 15V, 30A | Trench Field Stop | Yes | 1.9nF @ 25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DDB6U75N16W1RBOMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PCB, Through Hole | Chassis Mount | -40°C~150°C | 1 (Unlimited) | RoHS Compliant | 2006 | /files/infineontechnologies-ddb6u75n16w1rboma1-datasheets-0851.pdf | Module | 48mm | 12mm | 33.8mm | Contains Lead | 27 | 16 Weeks | 10 | no | EAR99 | Tin | Not Halogen Free | UPPER | UNSPECIFIED | NOT SPECIFIED | 27 | Single | NOT SPECIFIED | 1 | Not Qualified | R-XUFM-X27 | 65A | SILICON | Three Phase Inverter | ISOLATED | POWER CONTROL | N-CHANNEL | 335W | 1mA | 1.6kV | 137 ns | 1.2kV | 69A | Standard | 1200V | 630 ns | 2.15V @ 15V, 50A | Yes | 2.8nF @ 25V | |||||||||||||||||||||||||||||||||
| APTGT20TL601G | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~175°C TJ | 1 (Unlimited) | RoHS Compliant | /files/microsemicorporation-aptgt20tl601g-datasheets-0877.pdf | SP1 | 10 | 36 Weeks | 12 | EAR99 | 62W | UPPER | UNSPECIFIED | 12 | 4 | Insulated Gate BIP Transistors | R-XUFM-X10 | 1.1pF | SILICON | Three Level Inverter | ISOLATED | POWER CONTROL | N-CHANNEL | 62W | 600V | 170 ns | 600V | 32A | Standard | 310 ns | 1.9 V | 20V | 250μA | 1.9V @ 15V, 20A | Trench Field Stop | No | 1.1pF @ 25V | |||||||||||||||||||||||||||||||||||||||||
| FD-DF80R12W1H3_B52 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | -40°C~125°C | Not Applicable | Non-RoHS Compliant | 2014 | /files/infineontechnologies-fddf80r12w1h3b52-datasheets-0852.pdf | Module | 24 Weeks | unknown | Single | 215W | Standard | 1200V | 40A | 1mA | 2.4V @ 15V, 40A | Trench Field Stop | Yes | 235nF @ 25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| F3L50R06W1E3B11BOMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | -40°C~150°C | Not Applicable | RoHS Compliant | 2002 | /files/infineontechnologies-f3l50r06w1e3b11boma1-datasheets-0878.pdf | Module | Contains Lead | 16 Weeks | EAR99 | Not Halogen Free | NOT SPECIFIED | NOT SPECIFIED | Three Phase Inverter | 175W | Standard | 600V | 75A | 1mA | 1.9V @ 15V, 50A | Trench Field Stop | Yes | 3.1nF @ 25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FS10R12YE3BOMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| F475R06W1E3BOMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | -40°C~150°C | Not Applicable | RoHS Compliant | 2002 | /files/infineontechnologies-f475r06w1e3boma1-datasheets-0853.pdf | Module | Contains Lead | 11 | 16 Weeks | 15 | EAR99 | Not Halogen Free | NO | UPPER | UNSPECIFIED | NOT SPECIFIED | NOT SPECIFIED | 4 | R-XUFM-X11 | SILICON | Three Phase Inverter | ISOLATED | POWER CONTROL | N-CHANNEL | 275W | 45 ns | Standard | 600V | 100A | 330 ns | 1mA | 1.9V @ 15V, 75A | Trench Field Stop | Yes | 4.6nF @ 25V | |||||||||||||||||||||||||||||||||||||||||||
| VS-CPV362M4FPBF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -40°C~150°C TJ | 1 (Unlimited) | ROHS3 Compliant | 2014 | /files/vishaysemiconductordiodesdivision-cpv362m4k-datasheets-0771.pdf | 19-SIP (13 Leads), IMS-2 | 12 Weeks | 13 | EAR99 | 23W | 340pF | 23W | 600V | 1.7V | 8.8A | Standard | 250μA | 1.7V @ 15V, 4.8A | No | 0.34nF @ 30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-CPV364M4KPBF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | ROHS3 Compliant | 1997 | /files/vishaysemiconductordiodesdivision-vscpv364m4kpbf-datasheets-0858.pdf | 19-SIP (13 Leads), IMS-2 | 12 Weeks | 13 | EAR99 | CPV364M4 | Three Phase Inverter | 63W | Standard | 600V | 24A | 250μA | 1.8V @ 15V, 24A | No | 1.6nF @ 30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT200GT60JR | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Thunderbolt IGBT® | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | 1 (Unlimited) | RoHS Compliant | 1999 | /files/microsemicorporation-apt200gt60jr-datasheets-0862.pdf | SOT-227-4, miniBLOC | 4 | 24 Weeks | 4 | yes | HIGH RELIABILITY, UL RECOGNIZED | 500W | UPPER | UNSPECIFIED | 4 | 1 | 8.65nF | SILICON | Single | ISOLATED | POWER CONTROL | N-CHANNEL | 500W | 600V | 228 ns | 600V | 195A | Standard | 1232 ns | 25μA | 2.5V @ 15V, 200A | NPT | No | 8.65nF @ 25V | ||||||||||||||||||||||||||||||||||||||||||
| VS-ETF150Y65N | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FRED Pt® | 175°C TJ | 1 (Unlimited) | ROHS3 Compliant | 2016 | /files/vishaysemiconductordiodesdivision-vsetf150y65n-datasheets-0863.pdf | Module | 15 Weeks | EAR99 | unknown | 600W | NOT SPECIFIED | NOT SPECIFIED | Half Bridge Inverter | 600W | 650V | 2.17V | 201A | Standard | 2.17V @ 15V, 150A | NPT | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGT75A60T1G | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~175°C TJ | 1 (Unlimited) | RoHS Compliant | 2007 | /files/microsemicorporation-aptgt75a60t1g-datasheets-0868.pdf | SP1 | 51.6mm | 11.5mm | 40.8mm | Lead Free | 12 | 36 Weeks | 12 | IN PRODUCTION (Last Updated: 3 weeks ago) | yes | EAR99 | e1 | TIN SILVER COPPER | 250W | UPPER | THROUGH-HOLE | NOT SPECIFIED | 12 | Dual | NOT SPECIFIED | 2 | Insulated Gate BIP Transistors | Not Qualified | 4.62nF | 110 ns | 200 ns | SILICON | Half Bridge | ISOLATED | MOTOR CONTROL | N-CHANNEL | 250W | 600V | 1.5V | 170 ns | 600V | 100A | Standard | 310 ns | 1.9 V | 20V | 250μA | 1.9V @ 15V, 75A | Trench Field Stop | Yes | 4.62nF @ 25V | ||||||||||||||||||||||||||
| FP10R12W1T4B29BOMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Not Applicable | 16 Weeks | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT35GP120J | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | 1 (Unlimited) | RoHS Compliant | /files/microsemicorporation-apt35gp120j-datasheets-0870.pdf | 1.2kV | 64A | ISOTOP | Lead Free | 4 | 4 | yes | ULTRA FAST, LOW CONDUCTION LOSS | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 284W | UPPER | UNSPECIFIED | 4 | 1 | Insulated Gate BIP Transistors | 3.24nF | SILICON | Single | ISOLATED | POWER CONTROL | N-CHANNEL | 1.2kV | 36 ns | 1.2kV | 64A | Standard | 1200V | 222 ns | 20V | 6V | 250μA | 3.9V @ 15V, 35A | PT | No | 3.24nF @ 25V | ||||||||||||||||||||||||||||||||||||
| APT65GP60JDQ2 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Screw | Chassis Mount | 1 (Unlimited) | 150°C | -55°C | RoHS Compliant | 1999 | /files/microsemicorporation-apt65gp60jdq2-datasheets-0871.pdf | 600V | 198A | ISOTOP | Lead Free | 4 | No | Single | ISOTOP® | Single | 431W | 600V | 130A | Standard | 600V | 130A | 1.25mA | 2.7V @ 15V, 65A | PT | No | 7.4nF @ 25V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| APT40GP90JDQ2 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | 1 (Unlimited) | RoHS Compliant | 1999 | /files/microsemicorporation-apt40gp90jdq2-datasheets-0872.pdf | 900V | 100A | ISOTOP | Lead Free | 4 | 6 Weeks | 4 | yes | UL RECOGNIZED | 284W | UPPER | UNSPECIFIED | 4 | 1 | 3.3nF | SILICON | Single | ISOLATED | POWER CONTROL | N-CHANNEL | 284W | 900V | 37 ns | 900V | 64A | Standard | 220 ns | 350μA | 3.9V @ 15V, 40A | PT | No | 3.3nF @ 25V | |||||||||||||||||||||||||||||||||||||||
| MIXA20WB1200TML | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | -40°C~125°C TJ | Bulk | 1 (Unlimited) | ROHS3 Compliant | 2010 | /files/ixys-mixa20wb1200tml-datasheets-0873.pdf | MiniPack2 | 25 | 2 | yes | UL RECOGNIZED | 100W | UPPER | UNSPECIFIED | NOT SPECIFIED | 25 | NOT SPECIFIED | 7 | Insulated Gate BIP Transistors | Not Qualified | SILICON | Three Phase Inverter with Brake | ISOLATED | POWER CONTROL | N-CHANNEL | 100W | 1.2kV | 110 ns | 2.1V | 28A | Three Phase Bridge Rectifier | 1200V | 350 ns | 100μA | 2.1V @ 15V, 16A | PT | Yes | ||||||||||||||||||||||||||||||||||||||||
| CPV363M4K | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -40°C~150°C TJ | 1 (Unlimited) | Non-RoHS Compliant | 1998 | /files/vishaysemiconductordiodesdivision-vscpv363m4kpbf-datasheets-2350.pdf | 19-SIP (13 Leads), IMS-2 | 13 | 13 Weeks | Unknown | 13 | no | EAR99 | ULTRA FAST SOFT RECOVERY | 36W | SINGLE | CPV363M4 | 13 | 6 | Insulated Gate BIP Transistors | 740pF | SILICON | Three Phase Inverter | ISOLATED | POWER CONTROL | N-CHANNEL | 36W | 600V | 78 ns | 600V | 11A | Standard | 405 ns | 20V | 250μA | 2V @ 15V, 11A | No | 0.74nF @ 30V |
