Products
Manufacturer
RFQ
NEWS
ContactIGBTs Modules(2658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Moisture Sensitivity Level (MSL) | RoHS Status | Pbfree Code | ECCN Code | Additional Feature | Reach Compliance Code | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Operating Temperature (Max) | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Power Dissipation-Max (Abs) | Collector Current-Max (IC) | Collector-Emitter Voltage-Max | Turn On Time | Turn Off Time-Nom (toff) | VCEsat-Max | Gate-Emitter Voltage-Max | Number of Terminals |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| FZ800R12KE3 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | RoHS Compliant | icon-pbfree yes | EAR99 | compliant | NO | UPPER | UNSPECIFIED | NOT SPECIFIED | 5 | 150°C | NOT SPECIFIED | 1 | Insulated Gate BIP Transistors | Not Qualified | R-XUFM-X4 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | POWER CONTROL | N-CHANNEL | 3550W | 1200A | 1200V | 440 ns | 1000 ns | 2.15 V | 20V | 4 | |||||
| FP50R12KS4C | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | RoHS Compliant | icon-pbfree no | EAR99 | compliant | NO | UPPER | UNSPECIFIED | NOT SPECIFIED | 35 | 150°C | NOT SPECIFIED | 7 | Insulated Gate BIP Transistors | Not Qualified | R-XUFM-X35 | SILICON | COMPLEX | ISOLATED | N-CHANNEL | 360W | 70A | 1200V | 110 ns | 460 ns | 3.7 V | 20V | 35 | ||||||
| FS100R12KE3 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | RoHS Compliant | icon-pbfree no | EAR99 | compliant | NO | UPPER | UNSPECIFIED | NOT SPECIFIED | 35 | 150°C | NOT SPECIFIED | 6 | Insulated Gate BIP Transistors | Not Qualified | R-XUFM-X35 | SILICON | BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR | ISOLATED | N-CHANNEL | 480W | 140A | 1200V | 340 ns | 610 ns | 2.15 V | 20V | 35 | ||||||
| FS100R12KS4 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | RoHS Compliant | icon-pbfree no | EAR99 | compliant | NO | UPPER | UNSPECIFIED | NOT SPECIFIED | 39 | 150°C | NOT SPECIFIED | 6 | Insulated Gate BIP Transistors | Not Qualified | R-XUFM-X39 | SILICON | BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE | ISOLATED | N-CHANNEL | 660W | 130A | 1200V | 190 ns | 390 ns | 3.7 V | 20V | 39 | ||||||
| FS150R12KE3 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | RoHS Compliant | icon-pbfree no | EAR99 | compliant | NO | UPPER | UNSPECIFIED | NOT SPECIFIED | 35 | 150°C | NOT SPECIFIED | 6 | Insulated Gate BIP Transistors | Not Qualified | R-XUFM-X35 | SILICON | BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR | ISOLATED | N-CHANNEL | 700W | 200A | 1200V | 340 ns | 610 ns | 2.2 V | 20V | 35 | ||||||
| FS450R12KE3 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | 1 | RoHS Compliant | icon-pbfree no | EAR99 | compliant | NO | UPPER | UNSPECIFIED | NOT SPECIFIED | 29 | 150°C | NOT SPECIFIED | 6 | Insulated Gate BIP Transistors | Not Qualified | R-XUFM-X29 | SILICON | 3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR | ISOLATED | N-CHANNEL | 2000W | 600A | 1200V | 400 ns | 810 ns | 2.1 V | 20V | 29 | |||||
| FP25R12KS4C | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | RoHS Compliant | icon-pbfree no | EAR99 | compliant | NO | UPPER | UNSPECIFIED | NOT SPECIFIED | 24 | 150°C | NOT SPECIFIED | 7 | Insulated Gate BIP Transistors | Not Qualified | R-XUFM-X24 | SILICON | COMPLEX | ISOLATED | N-CHANNEL | 230W | 40A | 1200V | 110 ns | 460 ns | 3.7 V | 20V | 24 | ||||||
| FP40R12KE3 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | RoHS Compliant | icon-pbfree no | EAR99 | compliant | NO | UPPER | WIRE | NOT SPECIFIED | 24 | 175°C | NOT SPECIFIED | 7 | Insulated Gate BIP Transistors | Not Qualified | R-XUFM-W24 | SILICON | COMPLEX | ISOLATED | POWER CONTROL | N-CHANNEL | 200W | 55A | 1200V | 140 ns | 610 ns | 2.3 V | 20V | 24 | |||||
| FP40R12KE3G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | RoHS Compliant | icon-pbfree no | EAR99 | compliant | NO | UPPER | UNSPECIFIED | NOT SPECIFIED | 35 | 150°C | NOT SPECIFIED | 7 | Insulated Gate BIP Transistors | Not Qualified | R-XUFM-X35 | SILICON | COMPLEX | ISOLATED | N-CHANNEL | 200W | 55A | 1200V | 135 ns | 610 ns | 2.3 V | 20V | 35 | ||||||
| FD200R12KE3 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | RoHS Compliant | icon-pbfree yes | EAR99 | compliant | NO | UPPER | UNSPECIFIED | NOT SPECIFIED | 5 | 150°C | NOT SPECIFIED | 1 | Insulated Gate BIP Transistors | Not Qualified | R-XUFM-X5 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | N-CHANNEL | 1040W | 295A | 1200V | 400 ns | 830 ns | 2.15 V | 20V | 5 | ||||||
| FD300R12KE3 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | RoHS Compliant | icon-pbfree yes | EAR99 | compliant | NO | UPPER | UNSPECIFIED | NOT SPECIFIED | 5 | 150°C | NOT SPECIFIED | 1 | Not Qualified | R-XUFM-X5 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | N-CHANNEL | 480A | 1200V | 400 ns | 830 ns | 5 | ||||||||||
| FF100R12KS4 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | RoHS Compliant | icon-pbfree yes | EAR99 | compliant | NO | UPPER | UNSPECIFIED | NOT SPECIFIED | 7 | 150°C | NOT SPECIFIED | 2 | Insulated Gate BIP Transistors | Not Qualified | R-XUFM-X7 | SILICON | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | ISOLATED | N-CHANNEL | 780W | 150A | 1200V | 180 ns | 590 ns | 3.7 V | 20V | 7 | ||||||
| FF1200R17KE3 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | Non-RoHS Compliant | icon-pbfree no | EAR99 | compliant | NO | UPPER | UNSPECIFIED | NOT SPECIFIED | 10 | 150°C | NOT SPECIFIED | 2 | Insulated Gate BIP Transistors | Not Qualified | R-XUFM-X10 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | ISOLATED | N-CHANNEL | 5950W | 1600A | 1700V | 1050 ns | 2100 ns | 2.45 V | 20V | 10 | ||||||
| FF150R12KE3G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | RoHS Compliant | icon-pbfree yes | EAR99 | compliant | NO | UPPER | UNSPECIFIED | NOT SPECIFIED | 7 | 150°C | NOT SPECIFIED | 2 | Insulated Gate BIP Transistors | Not Qualified | R-XUFM-X7 | SILICON | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | ISOLATED | N-CHANNEL | 780W | 225A | 1200V | 400 ns | 830 ns | 2.15 V | 20V | 7 | ||||||
| FF150R12KS4 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | RoHS Compliant | icon-pbfree yes | EAR99 | FAST | compliant | NO | UPPER | UNSPECIFIED | NOT SPECIFIED | 7 | 150°C | NOT SPECIFIED | 2 | Insulated Gate BIP Transistors | Not Qualified | R-XUFM-X7 | SILICON | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | ISOLATED | N-CHANNEL | 1200W | 225A | 1200V | 180 ns | 590 ns | 3.7 V | 20V | 7 | |||||
| FF200R12KE3 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | RoHS Compliant | icon-pbfree yes | EAR99 | compliant | NO | UPPER | UNSPECIFIED | NOT SPECIFIED | 7 | 150°C | NOT SPECIFIED | 2 | Insulated Gate BIP Transistors | Not Qualified | R-XUFM-X7 | SILICON | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | ISOLATED | N-CHANNEL | 1040W | 295A | 1200V | 400 ns | 830 ns | 2.15 V | 20V | 7 | ||||||
| FF300R12KE3 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | RoHS Compliant | icon-pbfree yes | EAR99 | compliant | NO | UPPER | UNSPECIFIED | NOT SPECIFIED | 7 | 150°C | NOT SPECIFIED | 2 | Insulated Gate BIP Transistors | Not Qualified | R-XUFM-X7 | SILICON | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | ISOLATED | POWER CONTROL | N-CHANNEL | 1470W | 440A | 1200V | 400 ns | 830 ns | 2.2 V | 20V | 7 | |||||
| FF200R12KS4 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | RoHS Compliant | icon-pbfree yes | EAR99 | FAST | compliant | NO | UPPER | UNSPECIFIED | NOT SPECIFIED | 7 | 150°C | NOT SPECIFIED | 2 | Insulated Gate BIP Transistors | Not Qualified | R-XUFM-X7 | SILICON | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | ISOLATED | N-CHANNEL | 1400W | 275A | 1200V | 180 ns | 590 ns | 3.7 V | 20V | 7 | |||||
| FF800R12KE3 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | Non-RoHS Compliant | icon-pbfree no | EAR99 | compliant | NO | UPPER | UNSPECIFIED | NOT SPECIFIED | 10 | 150°C | NOT SPECIFIED | 2 | Insulated Gate BIP Transistors | Not Qualified | R-XUFM-X10 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | ISOLATED | N-CHANNEL | 3900W | 1200A | 1200V | 880 ns | 1140 ns | 2.15 V | 20V | 10 | ||||||
| FP15R12KE3G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | RoHS Compliant | icon-pbfree no | EAR99 | compliant | NO | UPPER | UNSPECIFIED | NOT SPECIFIED | 24 | 150°C | NOT SPECIFIED | 7 | Insulated Gate BIP Transistors | Not Qualified | R-XUFM-X24 | SILICON | COMPLEX | ISOLATED | N-CHANNEL | 100W | 25A | 1200V | 135 ns | 610 ns | 2.2 V | 20V | 24 | ||||||
| FP15R12KS4C | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | RoHS Compliant | icon-pbfree no | EAR99 | compliant | NO | UPPER | UNSPECIFIED | NOT SPECIFIED | 24 | 150°C | NOT SPECIFIED | 7 | Insulated Gate BIP Transistors | Not Qualified | R-XUFM-X24 | SILICON | COMPLEX | ISOLATED | N-CHANNEL | 180W | 30A | 1200V | 110 ns | 460 ns | 3.7 V | 20V | 24 | ||||||
| BSM50GB60DLC | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | RoHS Compliant | icon-pbfree no | EAR99 | compliant | NO | UPPER | UNSPECIFIED | NOT SPECIFIED | 7 | 175°C | NOT SPECIFIED | 2 | Insulated Gate BIP Transistors | Not Qualified | R-XUFM-X7 | SILICON | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | ISOLATED | N-CHANNEL | 280W | 75A | 600V | 52 ns | 151 ns | 2.45 V | 20V | 7 | ||||||
| BSM200GB60DLC | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | RoHS Compliant | icon-pbfree yes | EAR99 | compliant | NO | UPPER | UNSPECIFIED | NOT SPECIFIED | 7 | 175°C | NOT SPECIFIED | 2 | Insulated Gate BIP Transistors | Not Qualified | R-XUFM-X7 | SILICON | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | ISOLATED | N-CHANNEL | 730W | 230A | 600V | 229 ns | 326 ns | 2.45 V | 20V | 7 | ||||||
| BSM150GB60DLC | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | RoHS Compliant | icon-pbfree no | EAR99 | compliant | NO | UPPER | UNSPECIFIED | NOT SPECIFIED | 7 | 150°C | NOT SPECIFIED | 2 | Insulated Gate BIP Transistors | Not Qualified | R-XUFM-X7 | SILICON | SERIES, 2 ELEMENTS WITH BUILT-IN DIODE | ISOLATED | N-CHANNEL | 595W | 180A | 600V | 155 ns | 260 ns | 2.45 V | 20V | 7 | ||||||
| BSM75GB60DLC | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | RoHS Compliant | icon-pbfree no | EAR99 | compliant | NO | UPPER | UNSPECIFIED | NOT SPECIFIED | 7 | 150°C | NOT SPECIFIED | 2 | Insulated Gate BIP Transistors | Not Qualified | R-XUFM-X7 | SILICON | SERIES, 2 ELEMENTS WITH BUILT-IN DIODE | ISOLATED | N-CHANNEL | 355W | 100A | 600V | 90 ns | 205 ns | 2.45 V | 20V | 7 | ||||||
| DDB6U134N16RR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | RoHS Compliant | icon-pbfree no | EAR99 | compliant | NO | UPPER | UNSPECIFIED | NOT SPECIFIED | 19 | 150°C | NOT SPECIFIED | 1 | Not Qualified | R-XUFM-X19 | SILICON | SINGLE WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR | ISOLATED | POWER CONTROL | N-CHANNEL | 70A | 1200V | 19 | |||||||||||
| FF450R12KE4 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | RoHS Compliant | icon-pbfree yes | EAR99 | compliant | NO | UPPER | UNSPECIFIED | NOT SPECIFIED | 7 | 175°C | NOT SPECIFIED | 2 | Insulated Gate BIP Transistors | Not Qualified | R-XUFM-X7 | SILICON | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | ISOLATED | N-CHANNEL | 2400W | 520A | 1200V | 325 ns | 800 ns | 2.15 V | 20V | 7 | ||||||
| FF200R06KE3 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | RoHS Compliant | icon-pbfree yes | EAR99 | compliant | NO | UPPER | UNSPECIFIED | NOT SPECIFIED | 7 | 175°C | NOT SPECIFIED | 2 | Insulated Gate BIP Transistors | Not Qualified | R-XUFM-X7 | SILICON | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | ISOLATED | N-CHANNEL | 680W | 260A | 600V | 190 ns | 600 ns | 1.9 V | 20V | 7 | ||||||
| FF400R06KE3 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | 1 | RoHS Compliant | icon-pbfree yes | EAR99 | compliant | NO | UPPER | UNSPECIFIED | NOT SPECIFIED | 7 | 175°C | NOT SPECIFIED | 2 | Insulated Gate BIP Transistors | Not Qualified | R-XUFM-X7 | SILICON | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | ISOLATED | POWER CONTROL | N-CHANNEL | 1250W | 500A | 600V | 190 ns | 600 ns | 1.9 V | 20V | 7 | ||||
| FF150R12RT4 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | 1 | RoHS Compliant | icon-pbfree no | EAR99 | compliant | NO | UPPER | UNSPECIFIED | NOT SPECIFIED | 7 | 175°C | NOT SPECIFIED | 2 | Not Qualified | R-XUFM-X5 | SILICON | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | ISOLATED | POWER CONTROL | N-CHANNEL | 1200V | 185 ns | 490 ns | 5 |
