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ContactIGBTs Modules(2658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | JESD-609 Code | Terminal Finish | Polarity | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Input Capacitance | Turn On Delay Time | Turn-Off Delay Time | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Power Dissipation-Max (Abs) | Power - Max | Collector Emitter Breakdown Voltage | Collector Emitter Saturation Voltage | Turn On Time | Collector Emitter Voltage (VCEO) | Max Collector Current | Input | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Turn Off Time-Nom (toff) | VCEsat-Max | Gate-Emitter Voltage-Max | Gate-Emitter Thr Voltage-Max | Current - Collector Cutoff (Max) | Vce(on) (Max) @ Vge, Ic | IGBT Type | NTC Thermistor | Input Capacitance (Cies) @ Vce |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| FD150R12RT4HOSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | C | Screw | Chassis Mount | -40°C~150°C TJ | 1 (Unlimited) | ROHS3 Compliant | 2002 | /files/infineontechnologies-fd150r12rt4hosa1-datasheets-0729.pdf | Module | Lead Free | 4 | No SVHC | 5 | no | EAR99 | Not Halogen Free | 790W | UPPER | 7 | Single | 790W | 1 | R-XUFM-X4 | Single Chopper | ISOLATED | 1.2kV | 2.15V | 185 ns | 1.2kV | 150A | Standard | 1200V | 490 ns | 1mA | 2.15V @ 15V, 150A | Trench Field Stop | No | 9.3nF @ 25V | ||||||||||||||||||||||||||||||||||||
| MG12100S-BN2MM | Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | -40°C~125°C TJ | 1 (Unlimited) | ROHS3 Compliant | 2014 | /files/littelfuseinc-mg12100sbn2mm-datasheets-0734.pdf | S-3 Module | 10 Weeks | 160.000002g | 7 | EAR99 | NPN | 450W | Dual | 7.1nF | Half Bridge | 450W | 1.2kV | 1.7V | 1.7V | 140A | Standard | 1200V | 1mA | 1.7V @ 15V, 100A (Typ) | Trench Field Stop | No | 7.1nF @ 25V | |||||||||||||||||||||||||||||||||||||||||||||
| APT75GT120JU3 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | 1 (Unlimited) | RoHS Compliant | 2006 | /files/microsemicorporation-apt75gt120ju3-datasheets-0739.pdf | ISOTOP | 38.2mm | 9.6mm | 25.4mm | 4 | 36 Weeks | 30.000004g | 4 | IN PRODUCTION (Last Updated: 1 month ago) | yes | EAR99 | AVALANCHE RATED, LOW CONDUCTION LOSS | 416W | UPPER | UNSPECIFIED | 4 | 1 | Insulated Gate BIP Transistors | 5.34nF | SILICON | Single | ISOLATED | POWER CONTROL | N-CHANNEL | 416W | 1.2kV | 1.7V | 335 ns | 1.2kV | 100A | Standard | 1200V | 610 ns | 2.1 V | 20V | 5mA | 2.1V @ 15V, 75A | Trench Field Stop | No | 5.34nF @ 25V | |||||||||||||||||||||||||||
| APTGT300A60TG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~175°C TJ | 1 (Unlimited) | RoHS Compliant | 2009 | /files/microsemicorporation-aptgt300a60tg-datasheets-0741.pdf | SP4 | Lead Free | 9 | 36 Weeks | 10 | EAR99 | No | 935W | UPPER | UNSPECIFIED | 10 | Dual | 2 | R-XUFM-X9 | 18.4nF | 115 ns | 225 ns | SILICON | Half Bridge | ISOLATED | POWER CONTROL | N-CHANNEL | 935W | 600V | 180 ns | 600V | 430A | Standard | 370 ns | 350μA | 1.9V @ 15V, 300A | Trench Field Stop | Yes | 18.4nF @ 25V | |||||||||||||||||||||||||||||||||
| FS30R06W1E3B11BOMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | EasyPACK™ 1B | Screw | Chassis Mount | -40°C~150°C | 1 (Unlimited) | ROHS3 Compliant | 2002 | /files/infineontechnologies-fs30r06w1e3b11boma1-datasheets-0743.pdf | Module | Contains Lead | 16 Weeks | 18 | EAR99 | Not Halogen Free | NOT SPECIFIED | NOT SPECIFIED | Three Phase Inverter | 150W | 600V | 45A | Standard | 45A | 1mA | 2V @ 15V, 30A | Trench Field Stop | Yes | 1.65nF @ 25V | |||||||||||||||||||||||||||||||||||||||||||||||
| VS-GB55LA120UX | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFRED® | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | 1 (Unlimited) | ROHS3 Compliant | 2016 | /files/vishaysemiconductordiodesdivision-vsgb55la120ux-datasheets-0744.pdf | SOT-227-4, miniBLOC | 16 Weeks | 4 | EAR99 | 431W | Single | 431W | 1.2kV | 1.2kV | 84A | Standard | 1200V | 50μA | NPT | No | |||||||||||||||||||||||||||||||||||||||||||||||||||
| FP15R06W1E3B11BOMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | -40°C~150°C | Bulk | Not Applicable | RoHS Compliant | 2002 | /files/infineontechnologies-fp15r06w1e3b11boma1-datasheets-0747.pdf | Module | Contains Lead | 23 | 16 Weeks | EAR99 | UL APPROVED | Not Halogen Free | NO | UPPER | UNSPECIFIED | NOT SPECIFIED | NOT SPECIFIED | 7 | R-XUFM-X23 | SILICON | Three Phase Inverter | ISOLATED | POWER CONTROL | N-CHANNEL | 81W | 29 ns | Standard | 600V | 22A | 260 ns | 1mA | 2V @ 15V, 15A | Trench Field Stop | Yes | 830pF @ 25V | |||||||||||||||||||||||||||||||||||||
| VS-GB55NA120UX | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFRED® | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | 1 (Unlimited) | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-vsgb55na120ux-datasheets-0749.pdf | SOT-227-4, miniBLOC | 38.3mm | 12.3mm | 25.7mm | 16 Weeks | 4 | EAR99 | 431W | Single | 431W | 1.2kV | 1.2kV | 84A | Standard | 1200V | 50μA | NPT | No | ||||||||||||||||||||||||||||||||||||||||||||||||
| VS-GB75LA60UF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | 1 (Unlimited) | ROHS3 Compliant | 2016 | /files/vishaysemiconductordiodesdivision-vsgb75la60uf-datasheets-0752.pdf | SOT-227-4, miniBLOC | 16 Weeks | 4 | EAR99 | 447W | Single | 447W | 600V | 2V | 109A | Standard | 50μA | 2V @ 15V, 35A | NPT | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT75GP120JDQ3 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | 1 (Unlimited) | RoHS Compliant | 1999 | /files/microsemicorporation-apt75gp120jdq3-datasheets-0755.pdf | ISOTOP | 38.2mm | 9.6mm | 25.4mm | Lead Free | 4 | 33 Weeks | 30.000004g | 4 | yes | EAR99 | LOW CONDUCTION LOSS, UL RECOGNIZED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 543W | UPPER | UNSPECIFIED | 4 | 1 | Insulated Gate BIP Transistors | 7.04nF | SILICON | Single | ISOLATED | MOTOR CONTROL | N-CHANNEL | 543W | 1.2kV | 3.3V | 60 ns | 1.2kV | 128A | Standard | 1200V | 360 ns | 20V | 1.25mA | 3.9V @ 15V, 75A | PT | No | 7.04nF @ 25V | |||||||||||||||||||||||||
| FF650R17IE4BOSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PrimePack™2 | Chassis Mount | -40°C~150°C | Not Applicable | RoHS Compliant | 2013 | /files/infineontechnologies-ff650r17ie4bosa1-datasheets-0758.pdf | Module | Contains Lead | 7 | 10 | no | EAR99 | Not Halogen Free | NO | UPPER | UNSPECIFIED | NOT SPECIFIED | 11 | Dual | NOT SPECIFIED | 2 | Not Qualified | R-XUFM-X7 | SILICON | 2 Independent | ISOLATED | POWER CONTROL | N-CHANNEL | 4150W | 720 ns | Standard | 1700V | 1870 ns | 5mA | 2.45V @ 15V, 650A | Yes | 54nF @ 25V | ||||||||||||||||||||||||||||||||||||
| APTGT600SK60G | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~175°C TJ | 1 (Unlimited) | RoHS Compliant | 2006 | /files/microsemicorporation-aptgt600sk60g-datasheets-0761.pdf | SP6 | Lead Free | 5 | 36 Weeks | 5 | IN PRODUCTION (Last Updated: 3 weeks ago) | yes | EAR99 | AVALANCHE RATED | e1 | TIN SILVER COPPER | 2.3kW | UPPER | UNSPECIFIED | 5 | 1 | 49nF | 130 ns | 250 ns | SILICON | Single | ISOLATED | POWER CONTROL | N-CHANNEL | 2300W | 600V | 205 ns | 600V | 700A | Standard | 400 ns | 750μA | 1.8V @ 15V, 600A | Trench Field Stop | No | 49nF @ 25V | |||||||||||||||||||||||||||||||
| APT100GT60JR | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Thunderbolt IGBT® | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | 1 (Unlimited) | RoHS Compliant | 1999 | 600V | 148A | ISOTOP | Lead Free | 4 | 24 Weeks | 4 | UL RECOGNIZED | 500W | UPPER | UNSPECIFIED | 4 | 1 | Insulated Gate BIP Transistors | 5.15nF | SILICON | Single | ISOLATED | POWER CONTROL | N-CHANNEL | 600V | 115 ns | 600V | 148A | Standard | 450 ns | 30V | 25μA | 2.5V @ 15V, 100A | NPT | No | 5.15nF @ 25V | |||||||||||||||||||||||||||||||||||
| FP10R06W1E3BOMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Screw | Chassis Mount | -40°C~150°C | Not Applicable | RoHS Compliant | 2002 | /files/infineontechnologies-fp10r06w1e3boma1-datasheets-0699.pdf | Module | Contains Lead | 23 | 16 Weeks | No SVHC | 23 | no | EAR99 | Not Halogen Free | 68W | UPPER | UNSPECIFIED | NOT SPECIFIED | 23 | NOT SPECIFIED | 68W | 7 | Not Qualified | SILICON | Three Phase Inverter | ISOLATED | POWER CONTROL | N-CHANNEL | 600V | 2V | 26 ns | 600V | 16A | Standard | 260 ns | 1mA | 2V @ 15V, 10A | Trench Field Stop | Yes | 550pF @ 25V | ||||||||||||||||||||||||||||||||
| FS20R06W1E3B11BOMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | EasyPACK™ 1B | Screw | Chassis Mount | -40°C~150°C | Bulk | 1 (Unlimited) | ROHS3 Compliant | 2002 | /files/infineontechnologies-fs20r06w1e3b11boma1-datasheets-0701.pdf | Module | Contains Lead | 18 | 16 Weeks | 18 | EAR99 | UL APPROVED | Not Halogen Free | UPPER | UNSPECIFIED | NOT SPECIFIED | NOT SPECIFIED | 6 | SILICON | Full Bridge | ISOLATED | POWER CONTROL | N-CHANNEL | 135W | 57 ns | 600V | 35A | Standard | 35A | 320 ns | 1mA | 2V @ 15V, 20A | Trench Field Stop | Yes | 1.1nF @ 25V | |||||||||||||||||||||||||||||||||||
| MIXA150Q1200VA | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ROHS3 Compliant | 2015 | /files/ixys-mixa150q1200va-datasheets-0702.pdf | V1A-PAK | 18 Weeks | 695W | Single | 695W | 1.2kV | 2.1V | 220A | Standard | 1200V | 100μA | 2.1V @ 15V, 150A | PT | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT30GP60JDQ1 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | 1 (Unlimited) | RoHS Compliant | 1999 | /files/microsemicorporation-apt30gp60jdq1-datasheets-0703.pdf | 600V | 63A | SOT-227-4, miniBLOC | Lead Free | 4 | 4 | yes | LOW CONDUCTION LOSS | 245W | UPPER | UNSPECIFIED | 4 | 1 | 3.2nF | SILICON | Single | ISOLATED | POWER CONTROL | N-CHANNEL | 245W | 600V | 31 ns | 600V | 67A | Standard | 165 ns | 500μA | 2.7V @ 15V, 30A | PT | No | 3.2nF @ 25V | |||||||||||||||||||||||||||||||||||
| IXXN200N60B3 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | XPT™, GenX3™ | Chassis Mount | Chassis Mount | -55°C~175°C TJ | 1 (Unlimited) | ROHS3 Compliant | 2013 | /files/ixys-ixxn200n60b3-datasheets-0704.pdf | SOT-227-4, miniBLOC | 4 | 28 Weeks | UL RECOGNIZED | 940W | UPPER | UNSPECIFIED | 1 | Insulated Gate BIP Transistors | R-PUFM-X4 | 9.97nF | SILICON | Single | ISOLATED | POWER CONTROL | N-CHANNEL | 940W | 600V | 140 ns | 1.7V | 280A | Standard | 395 ns | 20V | 50μA | 1.7V @ 15V, 100A | PT | No | 9.97nF @ 25V | |||||||||||||||||||||||||||||||||||||
| IXXN200N60B3H1 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | XPT™, GenX3™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | 1 (Unlimited) | ROHS3 Compliant | 2013 | /files/ixys-ixxn200n60b3h1-datasheets-0705.pdf | SOT-227-4, miniBLOC | 8 Weeks | 780W | 9.97nF | Single | 780W | 600V | 1.7V | 200A | Standard | 50μA | 1.7V @ 15V, 100A | PT | No | 9.97nF @ 25V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IXGN120N60A3 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GenX3™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | 1 (Unlimited) | ROHS3 Compliant | 2009 | /files/ixys-ixgn120n60a3d1-datasheets-0688.pdf | SOT-227-4, miniBLOC | 4 | 30 Weeks | 38.000013g | yes | LOW CONDUCTION LOSS, UL RECOGNIZED | Nickel (Ni) | 595W | UPPER | UNSPECIFIED | IXG*120N60 | 4 | 1 | Insulated Gate BIP Transistors | R-PUFM-X4 | 14.8nF | SILICON | Single | ISOLATED | POWER CONTROL | N-CHANNEL | 595W | 600V | 123 ns | 1.35V | 200A | Standard | 830 ns | 20V | 50μA | 1.35V @ 15V, 100A | PT | No | 14.8nF @ 25V | ||||||||||||||||||||||||||||||||
| APT150GN60J | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -55°C~175°C TJ | 1 (Unlimited) | RoHS Compliant | 1999 | /files/microsemicorporation-aptrg8a120g-datasheets-4026.pdf | 600V | 220A | ISOTOP | 38.2mm | 9.6mm | 25.4mm | Lead Free | 4 | 24 Weeks | 30.000004g | 4 | yes | UL RECOGNIZED, HIGH RELIABILITY | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 536W | UPPER | UNSPECIFIED | 4 | 1 | Insulated Gate BIP Transistors | 9.2nF | 44 ns | 430 ns | SILICON | Single | ISOLATED | POWER CONTROL | N-CHANNEL | 600V | 1.5V | 154 ns | 600V | 220A | Standard | 575 ns | 30V | 25μA | 1.85V @ 15V, 150A | Trench Field Stop | No | 9.2nF @ 25V | |||||||||||||||||||||||||
| IXGN400N30A3 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GenX3™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | 1 (Unlimited) | ROHS3 Compliant | 2009 | /files/ixys-ixgn400n30a3-datasheets-0710.pdf | SOT-227-4, miniBLOC | 4 | 30 Weeks | 38.000013g | 4 | yes | EAR99 | LOW CONDUCTION LOSS, UL RECOGNIZED | Nickel (Ni) | 735W | UPPER | UNSPECIFIED | IXG*400N30 | 4 | 735W | 1 | Insulated Gate BIP Transistors | 19nF | SILICON | Single | ISOLATED | POWER CONTROL | N-CHANNEL | 300V | 1.15V | 100 ns | 1.15V | 400A | Standard | 555 ns | 20V | 50μA | 1.15V @ 15V, 100A | PT | No | 19nF @ 25V | ||||||||||||||||||||||||||||||
| IXYN82N120C3 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | XPT™, GenX3™ | Chassis Mount, Surface Mount | Chassis Mount | -55°C~175°C TJ | 1 (Unlimited) | ROHS3 Compliant | 2011 | /files/ixys-ixyn82n120c3-datasheets-0711.pdf | SOT-227-4, miniBLOC | 38.23mm | 9.6mm | 25.07mm | Lead Free | 4 | 28 Weeks | 4 | AVALANCHE RATED, UL RECOGNIZED | 500W | UPPER | UNSPECIFIED | 4 | 600W | 1 | Insulated Gate BIP Transistors | 4.1nF | 29 ns | 192 ns | SILICON | Single | ISOLATED | POWER CONTROL | N-CHANNEL | 1.2kV | 2.75V | 119 ns | 1.2kV | 120A | Standard | 1200V | 105A | 295 ns | 20V | 25μA | 3.2V @ 15V, 82A | No | 4.1nF @ 25V | ||||||||||||||||||||||||||||
| APT25GLQ120JCU2 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | -55°C~175°C TJ | 1 (Unlimited) | RoHS Compliant | 1997 | SOT-227-4, miniBLOC | Lead Free | 22 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | 170W | 1 | Insulated Gate BIP Transistors | 1.43nF | Single | 170W | 1.2kV | 2.4V | 45A | Standard | 1200V | 20V | 250μA | 2.4V @ 15V, 25A | Trench Field Stop | No | 1.43nF @ 25V | |||||||||||||||||||||||||||||||||||||||||||||||
| APT75GT120JU2 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | 1 (Unlimited) | RoHS Compliant | 2004 | /files/microsemicorporation-aptrg8a120g-datasheets-4026.pdf | ISOTOP | 38.2mm | 9.6mm | 25.4mm | Lead Free | 4 | 36 Weeks | 30.000004g | 4 | IN PRODUCTION (Last Updated: 1 month ago) | yes | EAR99 | AVALANCHE RATED, LOW CONDUCTION LOSS | 416W | UPPER | UNSPECIFIED | 4 | 1 | Insulated Gate BIP Transistors | 5.34nF | SILICON | Single | ISOLATED | POWER CONTROL | N-CHANNEL | 416W | 1.2kV | 1.7V | 335 ns | 1.2kV | 100A | Standard | 1200V | 610 ns | 2.1 V | 20V | 5mA | 2.1V @ 15V, 75A | Trench Field Stop | No | 5.34nF @ 25V | ||||||||||||||||||||||||||
| A2C25S12M3 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | -40°C~150°C TJ | 1 (Unlimited) | RoHS Compliant | /files/stmicroelectronics-a2c25s12m3-datasheets-1313.pdf | Module | 35 | ACTIVE (Last Updated: 7 months ago) | UL RECOGNIZED | NO | UPPER | UNSPECIFIED | A2C25S12 | 6 | R-XUFM-X35 | SILICON | Three Phase Inverter with Brake | MOTOR CONTROL | N-CHANNEL | 197W | 197W | 125.2 ns | Three Phase Bridge Rectifier | 1200V | 25A | 338 ns | 2.45 V | 20V | 7V | 100μA | 2.45V @ 15V, 25A | Trench Field Stop | Yes | 1550pF @ 25V | ||||||||||||||||||||||||||||||||||||||||
| FS20R06W1E3BOMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | EasyPACK™ 1B | Chassis Mount | -40°C~150°C | 1 (Unlimited) | ROHS3 Compliant | 2002 | /files/infineontechnologies-fs20r06w1e3boma1-datasheets-0718.pdf | Module | 15 | 16 Weeks | no | EAR99 | NO | UPPER | UNSPECIFIED | NOT SPECIFIED | 22 | NOT SPECIFIED | 6 | Not Qualified | R-XUFM-X15 | SILICON | Three Phase Inverter | ISOLATED | POWER CONTROL | N-CHANNEL | 135W | 57 ns | Standard | 600V | 35A | 320 ns | 1mA | 2V @ 15V, 20A | Trench Field Stop | Yes | 1.1nF @ 25V | |||||||||||||||||||||||||||||||||||||
| IXA90IF650NA | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ROHS3 Compliant | /files/ixys-ixb80if600na-datasheets-0673.pdf | SOT | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FZ600R12KS4HOSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Screw | Chassis Mount | -40°C~125°C | 1 (Unlimited) | ROHS3 Compliant | 2002 | /files/infineontechnologies-fz600r12ks4hosa1-datasheets-0675.pdf | Module | 5 | 14 Weeks | 4 | yes | EAR99 | UPPER | UNSPECIFIED | 5 | 3.9kW | 1 | R-XUFM-X5 | SILICON | Single | ISOLATED | N-CHANNEL | 3900W | 3.2V | 180 ns | 1.2kV | 700A | Standard | 1200V | 590 ns | 5mA | 3.75V @ 15V, 600A | No | 39nF @ 25V | |||||||||||||||||||||||||||||||||||||||
| APT35GT120JU3 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | 1 (Unlimited) | RoHS Compliant | 2004 | /files/microsemicorporation-aptrg8a120g-datasheets-4026.pdf | ISOTOP | 4 | 36 Weeks | 4 | IN PRODUCTION (Last Updated: 1 month ago) | yes | EAR99 | AVALANCHE RATED, LOW CONDUCTION LOSS | 260W | UPPER | UNSPECIFIED | 4 | 1 | Insulated Gate BIP Transistors | 2.53nF | SILICON | Single | ISOLATED | POWER CONTROL | N-CHANNEL | 260W | 1.2kV | 135 ns | 1.2kV | 55A | Standard | 1200V | 610 ns | 2.1 V | 20V | 5mA | 2.1V @ 15V, 35A | Trench Field Stop | No | 2.53nF @ 25V |
