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ZXTPS717MCTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi
- Manufacturer: Diodes Incorporated
- NO: 233-ZXTPS717MCTA
- Package: 8-VDFN Exposed Pad
- Datasheet:
- Stock: 7873
- Description: ZXTPS717MCTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi(Kg)
- Delivery:
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| Parameters | |
|---|---|
| Factory Lead Time | 16 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-VDFN Exposed Pad |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2016 |
| JESD-609 Code | e4 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Terminal Finish | Nickel/Palladium/Gold (Ni/Pd/Au) |
| Subcategory | Other Transistors |
| Max Power Dissipation | 3W |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Pin Count | 3 |
| Number of Elements | 1 |
| Polarity | NPN |
| Element Configuration | Dual |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 110MHz |
| Transistor Type | PNP + Diode (Isolated) |
| Collector Emitter Voltage (VCEO) | 300mV |
| Max Collector Current | 4A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 300 @ 100mA 2V |
| Current - Collector Cutoff (Max) | 100nA |
| Vce Saturation (Max) @ Ib, Ic | 310mV @ 150mA, 4A |
| Collector Emitter Breakdown Voltage | 12V |
| Current - Collector (Ic) (Max) | 4.4A |
| Transition Frequency | 110MHz |
| Collector Emitter Saturation Voltage | -10mV |
| Max Breakdown Voltage | 12V |
| Frequency - Transition | 100MHz |
| Collector Base Voltage (VCBO) | -20V |
| Emitter Base Voltage (VEBO) | -7V |
| Continuous Collector Current | -4A |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
ZXTPS717MCTA Overview
This device has a DC current gain of 300 @ 100mA 2V, which is the ratio between the base current and the collector current.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -10mV, which allows maximum flexibilSingle BJT transistory in design.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 310mV @ 150mA, 4A.Maintaining the continuous collector voltage at -4A is essential for high efficiency.An emitter's base voltage can be kept at -7V to gain high efficiency.Parts of this part have transition frequencies of 110MHz.An input voltage of 12V volts is the breakdown voltage.The maximum collector current is 4A volts.
ZXTPS717MCTA Features
the DC current gain for this device is 300 @ 100mA 2V
a collector emitter saturation voltage of -10mV
the vce saturation(Max) is 310mV @ 150mA, 4A
the emitter base voltage is kept at -7V
a transition frequency of 110MHz
ZXTPS717MCTA Applications
There are a lot of Diodes Incorporated ZXTPS717MCTA applications of single BJT transistors.
- Inverter
- Driver
- Interface
- Muting
