ZXTP722MATA

ZXTP722MATA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi


  • Manufacturer: Diodes Incorporated
  • NO: 233-ZXTP722MATA
  • Package: 3-UDFN
  • Datasheet: pdf
  • Stock: 9726
  • Description: ZXTP722MATA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 2.45W
Case Connection COLLECTOR
Power - Max 3W
Transistor Application SWITCHING
Gain Bandwidth Product 180MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 70V
Max Collector Current 2.7A
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 1.5A 5V
Current - Collector Cutoff (Max) 25nA
Vce Saturation (Max) @ Ib, Ic 260mV @ 200mA, 1.5A
Collector Emitter Breakdown Voltage 70V
Current - Collector (Ic) (Max) 2.5A
Transition Frequency 180MHz
Collector Emitter Saturation Voltage -270mV
Max Breakdown Voltage 70V
Collector Base Voltage (VCBO) 70V
Emitter Base Voltage (VEBO) -7.5V
Continuous Collector Current -2.5A
Height 580μm
Length 2.08mm
Width 2.075mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 3-UDFN
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Digi-Reel®
Published 2011
JESD-609 Code e4
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Additional Feature HIGH RELIABILITY
Subcategory Other Transistors
Max Power Dissipation 2.45W
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
Frequency 180MHz
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number ZXTP722

ZXTP722MATA Overview


This device has a DC current gain of 40 @ 1.5A 5V, which is the ratio between the collector current and the base current.This design offers maximum flexibility with a collector emitter saturation voltage of -270mV.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Single BJT transistor is essential to maintain the continuous collector voltage at -2.5A to achieve high efficiency.Keeping the emitter base voltage at -7.5V can result in a high level of efficiency.180MHz is present in the transition frequency.The breakdown input voltage is 70V volts.During maximum operation, collector current can be as low as 2.7A volts.

ZXTP722MATA Features


the DC current gain for this device is 40 @ 1.5A 5V
a collector emitter saturation voltage of -270mV
the vce saturation(Max) is 260mV @ 200mA, 1.5A
the emitter base voltage is kept at -7.5V
a transition frequency of 180MHz

ZXTP722MATA Applications


There are a lot of Diodes Incorporated ZXTP722MATA applications of single BJT transistors.

  • Driver
  • Inverter
  • Muting
  • Interface

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