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ZXTP25015DFHTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi
- Manufacturer: Diodes Incorporated
- NO: 233-ZXTP25015DFHTA
- Package: TO-236-3, SC-59, SOT-23-3
- Datasheet:
- Stock: 3937
- Description: ZXTP25015DFHTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Height | 1mm |
| Length | 3.05mm |
| Width | 1.4mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 12 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Number of Pins | 3 |
| Weight | 7.994566mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2006 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Subcategory | Other Transistors |
| Max Power Dissipation | 1.81W |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | ZXTP25015D |
| Pin Count | 3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power - Max | 1.25W |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 295MHz |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 15V |
| Max Collector Current | 4A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 300 @ 10mA 2V |
| Current - Collector Cutoff (Max) | 50nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 220mV @ 500mA, 5A |
| Collector Emitter Breakdown Voltage | 15V |
| Max Frequency | 295MHz |
| Transition Frequency | 295MHz |
| Collector Emitter Saturation Voltage | -160mV |
| Max Breakdown Voltage | 15V |
| Collector Base Voltage (VCBO) | -15V |
| Emitter Base Voltage (VEBO) | -7V |
ZXTP25015DFHTA Overview
This device has a DC current gain of 300 @ 10mA 2V, which is the ratio between the base current and the collector current.As it features a collector emitter saturation voltage of -160mV, it allows for maximum design flexibility.When VCE saturation is 220mV @ 500mA, 5A, transistor means Ic has reached transistors maximum value (saturated).The base voltage of the emitter can be kept at -7V to achieve high efficiency.In this part, there is a transition frequency of 295MHz.Single BJT transistor can take a breakdown input voltage of 15V volts.Maximum collector currents can be below 4A volts.
ZXTP25015DFHTA Features
the DC current gain for this device is 300 @ 10mA 2V
a collector emitter saturation voltage of -160mV
the vce saturation(Max) is 220mV @ 500mA, 5A
the emitter base voltage is kept at -7V
a transition frequency of 295MHz
ZXTP25015DFHTA Applications
There are a lot of Diodes Incorporated ZXTP25015DFHTA applications of single BJT transistors.
- Muting
- Driver
- Inverter
- Interface
