Products
Manufacturer
RFQ
NEWS
ContactZXTP2012ZTA
ZXTP2012ZTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi
- Manufacturer: Diodes Incorporated
- NO: 233-ZXTP2012ZTA
- Package: TO-243AA
- Datasheet:
- Stock: 8493
- Description: ZXTP2012ZTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi(Kg)
- Delivery:
- Payment:
In Stock
Please send RFQ , we will respond immediately.
.png)
.png)
.png)
.png)
.png)
.png)
.png)
.png)
.png)
You may place an order without registering to Chip Smart.
We strongly suggest you sign in before purchasing as you
can track your order in real time.
For your convenience, we accept multiple payment methods in USD, including PayPal, Credit Card, and wire transfer.
RFQ (Request for Quotations)It is recommended to request for quotations to get the latest
prices and inventories about the part.
Our sales will reply to
your request by email within 24 hours.
1. You'll receive an order information email in your inbox.
(Please remember to check the spam folder if you didn't hear from us).
2. Since inventories and prices may fluctuate to some
extent, the sales manager is going to reconfirm the order and let you know if there
are any updates.
Shipping starts at $40, but some countries will exceed $40. For
example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time
zone and country.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
Delivery TimeOnce the goods are shipped, estimated delivery time depends on the shipping methods you chose:
FedEx International, 5-7 business days.
The following are some common countries' logistic time.
| Parameters | |
|---|---|
| Factory Lead Time | 15 Weeks |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-243AA |
| Number of Pins | 4 |
| Weight | 51.993025mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2005 |
| JESD-609 Code | e3 |
| Pbfree Code | no |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -60V |
| Max Power Dissipation | 2.1W |
| Terminal Form | FLAT |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | -4.3A |
| Frequency | 120MHz |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Base Part Number | ZXTP2012 |
| Pin Count | 3 |
| JESD-30 Code | R-PSFM-F3 |
| Number of Elements | 1 |
| Voltage | 60V |
| Element Configuration | Single |
| Current | 4A |
| Power Dissipation | 1.5W |
| Case Connection | COLLECTOR |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 120MHz |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | -60V |
| Max Collector Current | -4.3A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 2A 1V |
| Current - Collector Cutoff (Max) | 20nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 215mV @ 500mA, 5A |
| Collector Emitter Breakdown Voltage | -80V |
| Current - Collector (Ic) (Max) | 4.3A |
| Transition Frequency | 120MHz |
| Collector Emitter Saturation Voltage | -160mV |
| Max Breakdown Voltage | 60V |
| Collector Base Voltage (VCBO) | -100V |
| Emitter Base Voltage (VEBO) | -7V |
| hFE Min | 100 |
| Max Junction Temperature (Tj) | 150°C |
| Continuous Collector Current | -4.3A |
| Height | 1.6mm |
| Length | 4.6mm |
| Width | 2.6mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
ZXTP2012ZTA Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 2A 1V.The collector emitter saturation voltage is -160mV, giving you a wide variety of design options.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.For high efficiency, the continuous collector voltage must be kept at -4.3A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -7V.Its current rating is -4.3A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.In the part, the transition frequency is 120MHz.There is a breakdown input voltage of 60V volts that it can take.In extreme cases, the collector current can be as low as -4.3A volts.
ZXTP2012ZTA Features
the DC current gain for this device is 100 @ 2A 1V
a collector emitter saturation voltage of -160mV
the vce saturation(Max) is 215mV @ 500mA, 5A
the emitter base voltage is kept at -7V
the current rating of this device is -4.3A
a transition frequency of 120MHz
ZXTP2012ZTA Applications
There are a lot of Diodes Incorporated ZXTP2012ZTA applications of single BJT transistors.
Driver
Muting
Interface
Inverter
