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ZXTP2008ZTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi
- Manufacturer: Diodes Incorporated
- NO: 233-ZXTP2008ZTA
- Package: TO-243AA
- Datasheet:
- Stock: 9222
- Description: ZXTP2008ZTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 15 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-243AA |
| Number of Pins | 4 |
| Weight | 51.993025mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2006 |
| JESD-609 Code | e3 |
| Pbfree Code | no |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Voltage - Rated DC | -30V |
| Max Power Dissipation | 2.1W |
| Terminal Position | DUAL |
| Terminal Form | FLAT |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | -5.5A |
| Frequency | 110MHz |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | ZXTP2008 |
| Pin Count | 4 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 2.1W |
| Case Connection | COLLECTOR |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 110MHz |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 30V |
| Max Collector Current | 5.5A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 1A 1V |
| Current - Collector Cutoff (Max) | 20nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 175mV @ 500mA, 5.5A |
| Collector Emitter Breakdown Voltage | 30V |
| Transition Frequency | 110MHz |
| Collector Emitter Saturation Voltage | -175mV |
| Max Breakdown Voltage | 30V |
| Collector Base Voltage (VCBO) | 50V |
| Emitter Base Voltage (VEBO) | 7V |
| hFE Min | 100 |
| Height | 1.6mm |
| Length | 4.6mm |
| Width | 2.6mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
ZXTP2008ZTA Overview
In this device, the DC current gain is 100 @ 1A 1V, which is the ratio between the base current and the collector current.The collector emitter saturation voltage is -175mV, which allows for maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 175mV @ 500mA, 5.5A.The base voltage of the emitter can be kept at 7V to achieve high efficiency.This device has a current rating of -5.5A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As a result, the part has a transition frequency of 110MHz.This device can take an input voltage of 30V volts before it breaks down.Collector current can be as low as 5.5A volts at its maximum.
ZXTP2008ZTA Features
the DC current gain for this device is 100 @ 1A 1V
a collector emitter saturation voltage of -175mV
the vce saturation(Max) is 175mV @ 500mA, 5.5A
the emitter base voltage is kept at 7V
the current rating of this device is -5.5A
a transition frequency of 110MHz
ZXTP2008ZTA Applications
There are a lot of Diodes Incorporated ZXTP2008ZTA applications of single BJT transistors.
- Interface
- Muting
- Inverter
- Driver
